JP2014051400A - 窒化物半導体自立基板の製造方法 - Google Patents
窒化物半導体自立基板の製造方法 Download PDFInfo
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- JP2014051400A JP2014051400A JP2012194963A JP2012194963A JP2014051400A JP 2014051400 A JP2014051400 A JP 2014051400A JP 2012194963 A JP2012194963 A JP 2012194963A JP 2012194963 A JP2012194963 A JP 2012194963A JP 2014051400 A JP2014051400 A JP 2014051400A
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- nitride semiconductor
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 97
- 239000004065 semiconductor Substances 0.000 title claims abstract description 92
- 239000000758 substrate Substances 0.000 title claims abstract description 76
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 29
- 238000010000 carbonizing Methods 0.000 claims abstract description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 19
- 239000013078 crystal Substances 0.000 description 13
- 125000004429 atom Chemical group 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 238000001947 vapour-phase growth Methods 0.000 description 6
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 5
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000000644 propagated effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- -1 hydrogen Chemical compound 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000000700 radioactive tracer Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】窒化物半導体自立基板の製造方法は、Si基板1の一主面上を炭化させて炭化膜2を1nm以上3nm以下の膜厚で形成する工程と、炭化膜2上に窒化物半導体層3を400μm以上1000μm以下の層厚で形成する工程と、炭化膜2と窒化物半導体層3の界面から窒化物半導体層3を分離させて窒化物半導体自立基板を得る工程と、からなる。
【選択図】図1
Description
達成されにくい。なお、炭素濃度が1×1021atoms/cm3を超えると、過剰な炭素による新たな転位発生のおそれがあり、こちらも、必ずしも好ましいものとはいえない。
実施例1で用いた、炭化膜2が形成されたSi基板1の主面上に対して、以下の内容でバッファ層を形成した。
Claims (3)
- Si基板の一主面上を炭化させて炭化膜を1nm以上3nm以下の膜厚で形成する工程と、前記炭化膜上に窒化物半導体層を400μm以上1000μm以下の層厚で形成する工程と、前記炭化膜と前記窒化物半導体層の界面から前記窒化物半導体層を分離させて窒化物半導体自立基板を得る工程と、からなること特徴とする窒化物半導体自立基板の製造方法。
- 窒化物半導体層は、互いに異なる組成の窒化物が繰り返し積層されてなるバッファ層を介して形成されることを特徴とする請求項1に記載の窒化物半導体自立基板の製造方法。
- バッファ層は、炭素濃度が1×1018atoms/cm3以上であることを特徴とする請求項2に記載の窒化物半導体自立基板の製造方法。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0856015A (ja) * | 1994-08-12 | 1996-02-27 | Matsushita Electric Ind Co Ltd | 半導体薄膜の形成方法 |
JPH09223819A (ja) * | 1995-12-15 | 1997-08-26 | Toshiba Corp | 半導体発光素子及びその製造方法 |
US20030010974A1 (en) * | 2001-07-13 | 2003-01-16 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
JP2011512649A (ja) * | 2008-01-30 | 2011-04-21 | ジルトロニック アクチエンゲゼルシャフト | 半導体構造の製造方法 |
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- 2012-09-05 JP JP2012194963A patent/JP5831763B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0856015A (ja) * | 1994-08-12 | 1996-02-27 | Matsushita Electric Ind Co Ltd | 半導体薄膜の形成方法 |
JPH09223819A (ja) * | 1995-12-15 | 1997-08-26 | Toshiba Corp | 半導体発光素子及びその製造方法 |
US20030010974A1 (en) * | 2001-07-13 | 2003-01-16 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
JP2011512649A (ja) * | 2008-01-30 | 2011-04-21 | ジルトロニック アクチエンゲゼルシャフト | 半導体構造の製造方法 |
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