JP2014045192A5 - - Google Patents
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- Publication number
- JP2014045192A5 JP2014045192A5 JP2013172804A JP2013172804A JP2014045192A5 JP 2014045192 A5 JP2014045192 A5 JP 2014045192A5 JP 2013172804 A JP2013172804 A JP 2013172804A JP 2013172804 A JP2013172804 A JP 2013172804A JP 2014045192 A5 JP2014045192 A5 JP 2014045192A5
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting device
- semiconductor layer
- layer
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120093016A KR101957816B1 (ko) | 2012-08-24 | 2012-08-24 | 발광 소자 |
| KR10-2012-0093016 | 2012-08-24 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014045192A JP2014045192A (ja) | 2014-03-13 |
| JP2014045192A5 true JP2014045192A5 (cg-RX-API-DMAC7.html) | 2016-10-06 |
| JP6294031B2 JP6294031B2 (ja) | 2018-03-14 |
Family
ID=49028998
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013172804A Expired - Fee Related JP6294031B2 (ja) | 2012-08-24 | 2013-08-23 | 発光素子 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9478718B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP2701211B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP6294031B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR101957816B1 (cg-RX-API-DMAC7.html) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160005919A1 (en) * | 2013-02-05 | 2016-01-07 | Tokuyama Corporation | Nitride semiconductor light emitting device |
| KR102066620B1 (ko) * | 2013-07-18 | 2020-01-16 | 엘지이노텍 주식회사 | 발광 소자 |
| US10361343B2 (en) * | 2014-07-02 | 2019-07-23 | Trustees Of Boston University | Ultraviolet light emitting diodes |
| TWI883921B (zh) * | 2014-07-03 | 2025-05-11 | 晶元光電股份有限公司 | 光電元件 |
| TWI625868B (zh) | 2014-07-03 | 2018-06-01 | 晶元光電股份有限公司 | 光電元件及其製造方法 |
| CN110676367B (zh) * | 2014-07-31 | 2023-03-24 | 首尔伟傲世有限公司 | 发光二极管 |
| KR102322692B1 (ko) * | 2015-05-29 | 2021-11-05 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 자외선 발광소자 |
| US10950747B2 (en) | 2015-07-01 | 2021-03-16 | Sensor Electronic Technology, Inc. | Heterostructure for an optoelectronic device |
| US10050172B2 (en) * | 2015-07-01 | 2018-08-14 | Sensor Electronic Technology, Inc. | Substrate structure removal |
| KR102378952B1 (ko) * | 2015-08-27 | 2022-03-25 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 및 이를 포함하는 발광소자 패키지 |
| WO2017049053A1 (en) | 2015-09-17 | 2017-03-23 | Crystal Is, Inc. | Ultraviolet light-emitting devices incorporating two-dimensional hole gases |
| JP6573076B2 (ja) * | 2016-02-01 | 2019-09-11 | パナソニック株式会社 | 紫外線発光素子 |
| JP6805674B2 (ja) | 2016-09-21 | 2020-12-23 | 豊田合成株式会社 | 発光素子及びその製造方法 |
| CN106784349B (zh) * | 2016-12-21 | 2020-02-07 | Tcl集团股份有限公司 | 一种能级势垒高度连续变化的量子点固态膜及其制备方法 |
| JP6812790B2 (ja) * | 2016-12-28 | 2021-01-13 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体発光素子 |
| WO2019053619A1 (en) * | 2017-09-18 | 2019-03-21 | King Abdullah University Of Science And Technology | OPTOELECTRONIC DEVICE HAVING BORON NITRIDE ALLOY ELECTRON BLOCKING LAYER AND METHOD OF PRODUCING THE SAME |
| DE102018120490A1 (de) | 2018-08-22 | 2020-02-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauelement mit einer halbleiterkontaktschicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements |
| WO2021064005A1 (en) * | 2019-10-04 | 2021-04-08 | Cambridge Enterprise Limited | POLARISED EMISSION FROM QUANTUM WIRES IN CUBIC GaN |
| CN116325192B (zh) * | 2020-11-25 | 2025-06-03 | 苏州晶湛半导体有限公司 | 光电器件及其制备方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3468082B2 (ja) * | 1998-02-26 | 2003-11-17 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| JPH11340505A (ja) * | 1998-05-25 | 1999-12-10 | Matsushita Electric Ind Co Ltd | 窒化ガリウム系化合物半導体発光素子 |
| US6649287B2 (en) * | 2000-12-14 | 2003-11-18 | Nitronex Corporation | Gallium nitride materials and methods |
| JP4465941B2 (ja) * | 2001-11-22 | 2010-05-26 | 富士ゼロックス株式会社 | 紫外線受光素子 |
| US7358539B2 (en) | 2003-04-09 | 2008-04-15 | Lumination Llc | Flip-chip light emitting diode with indium-tin-oxide based reflecting contacts |
| JP2006066556A (ja) * | 2004-08-25 | 2006-03-09 | Nippon Telegr & Teleph Corp <Ntt> | 窒化物半導体素子およびその製造方法 |
| JP5032171B2 (ja) * | 2007-03-26 | 2012-09-26 | 株式会社東芝 | 半導体発光素子およびその製造方法ならびに発光装置 |
| JPWO2009072365A1 (ja) * | 2007-12-07 | 2011-04-21 | 出光興産株式会社 | 窒化ガリウム系化合物半導体発光素子用非晶質透明導電膜 |
| US8394711B2 (en) * | 2009-02-12 | 2013-03-12 | The Curators Of The University Of Missouri | Systems and methods for co-doping wide band gap materials |
| JP4815013B2 (ja) * | 2009-04-09 | 2011-11-16 | パナソニック株式会社 | 窒化物系半導体発光素子、照明装置、液晶表示装置および照明装置の製造方法 |
| WO2011018942A1 (ja) * | 2009-08-13 | 2011-02-17 | 昭和電工株式会社 | 半導体発光素子、半導体発光装置、半導体発光素子の製造方法、半導体発光装置の製造方法、半導体発光装置を用いた照明装置および電子機器 |
| KR101028286B1 (ko) | 2009-12-28 | 2011-04-11 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| KR20120041439A (ko) * | 2010-10-21 | 2012-05-02 | 한국광기술원 | 질화물계 반도체 소자 및 그의 제조 방법 |
| KR20120051205A (ko) | 2010-11-12 | 2012-05-22 | 엘지이노텍 주식회사 | 발광 소자 |
| US20130292685A1 (en) | 2012-05-05 | 2013-11-07 | Texas Tech University System | Structures and Devices Based on Boron Nitride and Boron Nitride-III-Nitride Heterostructures |
-
2012
- 2012-08-24 KR KR1020120093016A patent/KR101957816B1/ko not_active Expired - Fee Related
-
2013
- 2013-08-22 US US13/973,206 patent/US9478718B2/en active Active
- 2013-08-23 JP JP2013172804A patent/JP6294031B2/ja not_active Expired - Fee Related
- 2013-08-23 EP EP13181618.3A patent/EP2701211B1/en not_active Not-in-force