JP2014036038A - 撮像装置の製造方法 - Google Patents
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H01L27/14625—Optical elements or arrangements associated with the device
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
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Abstract
【解決手段】 撮像領域10の面積をS1、周辺領域10の面積をS2、第1の時点における第1部分221の体積をV1A、第1の時点における第2部分222の体積をV2A、第2の時点における第1部分221の体積をV1B、第2の時点における第2部分222の体積をV2Bとして、V1A/S1<V2A/S2およびV1B/S1≧V2B/S2が成り立つ。
【選択図】 図2
Description
10 撮像領域
101 光電変換部
20 周辺領域
210 ベース膜
Claims (10)
- 複数の光電変換部が配列された撮像領域および前記撮像領域の周りの周辺領域を有する基板と、前記撮像領域の上において各々が前記光電変換部に対応して設けられた複数の導光部材と、を備える撮像装置の製造方法であって、
前記撮像領域の上に位置し、各々が前記光電変換部に対応した複数の開口を有する導光部と、前記周辺領域の上に位置する周辺部と、を有する膜の、前記導光部および前記周辺部を覆うように、前記開口を埋める埋め込み材を形成する第1工程と、
前記埋め込み材を加工する第2工程と、
前記第2工程の後、前記導光部が露出するように前記埋め込み材に研磨処理を施すことにより、前記埋め込み材の一部であって、各々が前記複数の開口内に配された複数の導光部材を形成する第3工程と、を有し、
第1工程と前記第2工程の間の第1の時点および前記第2工程と前記第3工程の間の第2の時点において前記埋め込み材は、前記導光部の上にて前記撮像領域から基準距離だけ離れて存在する第1部分と、前記周辺部の上にて前記周辺領域から前記基準距離だけ離れて存在する第2部分と、前記第1部分と前記撮像領域との間に存在して前記複数の開口を埋める第3部分と、を含み、
前記撮像領域の面積をS1、前記周辺領域の面積をS2、前記第1の時点における前記第1部分の体積をV1A、前記第1の時点における前記第2部分の体積をV2A、前記第2の時点における前記第1部分の体積をV1B、前記第2の時点における前記第2部分の体積をV2Bとして、V1A/S1<V2A/S2およびV1B/S1≧V2B/S2が成り立つことを特徴とする撮像装置の製造方法。 - S1<S2を満たす請求項1に記載の撮像装置の製造方法。
- V2B/S2≧V1B/2S1を満たす請求項1または2に記載の撮像装置の製造方法。
- 前記膜は、前記埋め込み材よりも前記研磨処理に対する研磨速度が低い材料からなる層を含む多層膜である請求項1乃至3のいずれか1項に記載の撮像装置の製造方法。
- 前記層が露出した状態で前記研磨処理を終了する請求項4に記載の撮像装置の製造方法。
- 前記層は、前記膜の最上層である請求項4または5に記載の撮像装置の製造方法。
- 前記研磨処理はシリカスラリーを用いたCMP処理であって、前記埋め込み材は窒化シリコンであり、前記層の材料は炭素を含有する酸化シリコンまたは炭素を含有する窒化シリコンである請求項4乃至6のいずれか1項に記載の撮像装置の製造方法。
- 前記第3工程において、前記導光部が露出する前に、前記周辺部が露出する請求項1乃至7のいずれか1項に記載の撮像装置の製造方法。
- 前記膜は前記周辺部に開口を有し、前記埋め込み材は、前記第2部分と前記周辺領域との間に存在して前記周辺部の前記開口を埋める第4部分とを含む請求項1乃至8のいずれか1項に記載の撮像装置の製造方法。
- 前記複数の導光部材の配列周期が2μm以下である請求項1乃至9のいずれか1項に記載の撮像装置の製造方法。
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JP2012174844A JP6061544B2 (ja) | 2012-08-07 | 2012-08-07 | 撮像装置の製造方法 |
US13/958,840 US8852987B2 (en) | 2012-08-07 | 2013-08-05 | Method of manufacturing image pickup device |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2015230928A (ja) * | 2014-06-03 | 2015-12-21 | キヤノン株式会社 | 半導体装置の製造方法 |
JP2017011037A (ja) * | 2015-06-18 | 2017-01-12 | キヤノン株式会社 | 固体撮像装置及びその製造方法ならびにカメラ |
JP2017188572A (ja) * | 2016-04-06 | 2017-10-12 | キヤノン株式会社 | 光電変換装置、光電変換装置の製造方法及び撮像システム |
US20220238591A1 (en) * | 2020-02-11 | 2022-07-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit photodetector |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US9768330B2 (en) * | 2014-08-25 | 2017-09-19 | Micron Technology, Inc. | Method and optoelectronic structure providing polysilicon photonic devices with different optical properties in different regions |
KR102367384B1 (ko) | 2015-01-13 | 2022-02-25 | 삼성전자주식회사 | 이미지 센서 및 그 형성 방법 |
US9589969B1 (en) * | 2016-01-15 | 2017-03-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method of the same |
US11398512B2 (en) * | 2019-12-19 | 2022-07-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photo-sensing device and manufacturing method thereof |
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JP2005302894A (ja) * | 2004-04-08 | 2005-10-27 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2008192951A (ja) * | 2007-02-07 | 2008-08-21 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
JP2009164247A (ja) * | 2007-12-28 | 2009-07-23 | Sony Corp | 固体撮像装置とその製造方法、カメラ及び電子機器 |
JP2010087441A (ja) * | 2008-10-03 | 2010-04-15 | Sony Corp | 固体撮像装置および固体撮像装置の製造方法 |
Family Cites Families (2)
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JP2010093160A (ja) | 2008-10-10 | 2010-04-22 | Sony Corp | 固体撮像装置とその製造方法並びに電子機器 |
JP4735762B2 (ja) | 2010-01-20 | 2011-07-27 | ソニー株式会社 | 固体撮像装置の製造方法 |
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- 2012-08-07 JP JP2012174844A patent/JP6061544B2/ja not_active Expired - Fee Related
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005302894A (ja) * | 2004-04-08 | 2005-10-27 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2008192951A (ja) * | 2007-02-07 | 2008-08-21 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
JP2009164247A (ja) * | 2007-12-28 | 2009-07-23 | Sony Corp | 固体撮像装置とその製造方法、カメラ及び電子機器 |
JP2010087441A (ja) * | 2008-10-03 | 2010-04-15 | Sony Corp | 固体撮像装置および固体撮像装置の製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015230928A (ja) * | 2014-06-03 | 2015-12-21 | キヤノン株式会社 | 半導体装置の製造方法 |
US9601540B2 (en) | 2014-06-03 | 2017-03-21 | Canon Kabushiki Kaisha | Method for producing semiconductor device |
JP2017011037A (ja) * | 2015-06-18 | 2017-01-12 | キヤノン株式会社 | 固体撮像装置及びその製造方法ならびにカメラ |
JP2017188572A (ja) * | 2016-04-06 | 2017-10-12 | キヤノン株式会社 | 光電変換装置、光電変換装置の製造方法及び撮像システム |
US20220238591A1 (en) * | 2020-02-11 | 2022-07-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit photodetector |
US11923396B2 (en) * | 2020-02-11 | 2024-03-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit photodetector |
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Publication number | Publication date |
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US8852987B2 (en) | 2014-10-07 |
US20140045292A1 (en) | 2014-02-13 |
JP6061544B2 (ja) | 2017-01-18 |
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