JP2014033335A - Ｍｅｍｓ素子、電子機器、およびｍｅｍｓ素子の製造方法 - Google Patents

Ｍｅｍｓ素子、電子機器、およびｍｅｍｓ素子の製造方法 Download PDF

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Publication number
JP2014033335A
JP2014033335A JP2012172611A JP2012172611A JP2014033335A JP 2014033335 A JP2014033335 A JP 2014033335A JP 2012172611 A JP2012172611 A JP 2012172611A JP 2012172611 A JP2012172611 A JP 2012172611A JP 2014033335 A JP2014033335 A JP 2014033335A
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JP
Japan
Prior art keywords
mems
lower electrode
upper electrode
base portion
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012172611A
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English (en)
Japanese (ja)
Other versions
JP2014033335A5 (enExample
Inventor
Yusuke Matsuzawa
勇介 松澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2012172611A priority Critical patent/JP2014033335A/ja
Priority to US13/953,092 priority patent/US9496806B2/en
Priority to CN201310331547.5A priority patent/CN103569940A/zh
Publication of JP2014033335A publication Critical patent/JP2014033335A/ja
Publication of JP2014033335A5 publication Critical patent/JP2014033335A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
    • H02N1/002—Electrostatic motors
    • H02N1/006—Electrostatic motors of the gap-closing type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/0006—Interconnects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0271—Resonators; ultrasonic resonators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP2012172611A 2012-08-03 2012-08-03 Ｍｅｍｓ素子、電子機器、およびｍｅｍｓ素子の製造方法 Pending JP2014033335A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012172611A JP2014033335A (ja) 2012-08-03 2012-08-03 Ｍｅｍｓ素子、電子機器、およびｍｅｍｓ素子の製造方法
US13/953,092 US9496806B2 (en) 2012-08-03 2013-07-29 MEMS device, electronic apparatus, and manufacturing method of MEMS device
CN201310331547.5A CN103569940A (zh) 2012-08-03 2013-08-01 Mems元件、电子设备以及mems元件的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012172611A JP2014033335A (ja) 2012-08-03 2012-08-03 Ｍｅｍｓ素子、電子機器、およびｍｅｍｓ素子の製造方法

Publications (2)

Publication Number Publication Date
JP2014033335A true JP2014033335A (ja) 2014-02-20
JP2014033335A5 JP2014033335A5 (enExample) 2014-05-01

Family

ID=50024790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012172611A Pending JP2014033335A (ja) 2012-08-03 2012-08-03 Ｍｅｍｓ素子、電子機器、およびｍｅｍｓ素子の製造方法

Country Status (3)

Country Link
US (1) US9496806B2 (enExample)
JP (1) JP2014033335A (enExample)
CN (1) CN103569940A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102482842B1 (ko) * 2015-11-13 2022-12-29 삼성전자 주식회사 발전 기능을 수행하는 정전 유도 장치
US10206140B2 (en) * 2016-11-02 2019-02-12 Motorola Mobility Llc Method and apparatus for operating a device on a licensed spectrum and an unlicensed spectrum
CN110944276B (zh) * 2019-12-31 2025-02-11 潍坊歌尔微电子有限公司 用于mems器件的防尘结构及mems麦克风封装结构

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10196677B4 (de) 2001-07-30 2014-03-13 Mitsubishi Denki K.K. Elektrodenstruktur und Verfahren zum Herstellen eines Dünnschicht-Strukturkörpers
JP3651671B2 (ja) * 2001-08-30 2005-05-25 株式会社東芝 マイクロメカニカルスイッチ及びその製造方法
JP3861813B2 (ja) * 2003-01-14 2006-12-27 株式会社デンソー 静電振動型デバイス
JP4377740B2 (ja) * 2004-04-28 2009-12-02 株式会社東芝 圧電駆動型ｍｅｍｓ素子およびこの圧電駆動型ｍｅｍｓ素子を有する移動体通信機
JP4385937B2 (ja) * 2004-12-15 2009-12-16 セイコーエプソン株式会社 アクチュエータ
CN1821050A (zh) * 2005-02-16 2006-08-23 精工爱普生株式会社 微机电系统元件及微机电系统元件的制造方法
KR100707193B1 (ko) * 2005-05-31 2007-04-13 삼성전자주식회사 복층 구조의 콤전극을 구비한 광스캐너
JP4438786B2 (ja) * 2005-11-17 2010-03-24 セイコーエプソン株式会社 Ｍｅｍｓ振動子及びその製造方法
JP4737140B2 (ja) * 2006-10-20 2011-07-27 セイコーエプソン株式会社 Ｍｅｍｓデバイスおよびその製造方法
JP2008114354A (ja) * 2006-11-08 2008-05-22 Seiko Epson Corp 電子装置及びその製造方法
JP4219383B2 (ja) * 2006-12-28 2009-02-04 日本航空電子工業株式会社 櫛歯型静電アクチュエータ
JP5341874B2 (ja) * 2008-02-29 2013-11-13 日本電信電話株式会社 Ｍｅｍｓデバイスとその製造方法
JP5332463B2 (ja) 2008-09-30 2013-11-06 セイコーエプソン株式会社 Ｍｅｍｓ・半導体複合素子
JP5541772B2 (ja) 2009-10-08 2014-07-09 三菱電機株式会社 電極構造
JP2011189423A (ja) * 2010-03-12 2011-09-29 Seiko Epson Corp Ｍｅｍｓ素子および発振器
JP5630243B2 (ja) 2010-11-30 2014-11-26 セイコーエプソン株式会社 電子装置、電子機器及び電子装置の製造方法
JP2012129605A (ja) * 2010-12-13 2012-07-05 Seiko Epson Corp Ｍｅｍｓ振動子、発振器、およびｍｅｍｓ振動子の製造方法

Also Published As

Publication number Publication date
US20140035433A1 (en) 2014-02-06
US9496806B2 (en) 2016-11-15
CN103569940A (zh) 2014-02-12

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