CN103569940A - Mems元件、电子设备以及mems元件的制造方法 - Google Patents

Mems元件、电子设备以及mems元件的制造方法 Download PDF

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Publication number
CN103569940A
CN103569940A CN201310331547.5A CN201310331547A CN103569940A CN 103569940 A CN103569940 A CN 103569940A CN 201310331547 A CN201310331547 A CN 201310331547A CN 103569940 A CN103569940 A CN 103569940A
Authority
CN
China
Prior art keywords
mems
lower electrode
upper electrode
mems element
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310331547.5A
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English (en)
Chinese (zh)
Inventor
松泽勇介
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of CN103569940A publication Critical patent/CN103569940A/zh
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
    • H02N1/002—Electrostatic motors
    • H02N1/006—Electrostatic motors of the gap-closing type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0006—Interconnects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0271—Resonators; ultrasonic resonators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
CN201310331547.5A 2012-08-03 2013-08-01 Mems元件、电子设备以及mems元件的制造方法 Pending CN103569940A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012172611A JP2014033335A (ja) 2012-08-03 2012-08-03 Ｍｅｍｓ素子、電子機器、およびｍｅｍｓ素子の製造方法
JP2012-172611 2012-08-03

Publications (1)

Publication Number Publication Date
CN103569940A true CN103569940A (zh) 2014-02-12

Family

ID=50024790

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310331547.5A Pending CN103569940A (zh) 2012-08-03 2013-08-01 Mems元件、电子设备以及mems元件的制造方法

Country Status (3)

Country Link
US (1) US9496806B2 (enExample)
JP (1) JP2014033335A (enExample)
CN (1) CN103569940A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102482842B1 (ko) * 2015-11-13 2022-12-29 삼성전자 주식회사 발전 기능을 수행하는 정전 유도 장치
US10206140B2 (en) * 2016-11-02 2019-02-12 Motorola Mobility Llc Method and apparatus for operating a device on a licensed spectrum and an unlicensed spectrum
CN110944276B (zh) * 2019-12-31 2025-02-11 潍坊歌尔微电子有限公司 用于mems器件的防尘结构及mems麦克风封装结构

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1821050A (zh) * 2005-02-16 2006-08-23 精工爱普生株式会社 微机电系统元件及微机电系统元件的制造方法
CN101177234A (zh) * 2006-11-08 2008-05-14 精工爱普生株式会社 电子装置及其制造方法
US20110013256A1 (en) * 2008-02-29 2011-01-20 Shingo Uchiyama Mems device and method of manufacturing the same
US20120134121A1 (en) * 2010-11-30 2012-05-31 Seiko Epson Corporation Electronic device, electronic apparatus, and method of manufacturing electronic device
CN102602876A (zh) * 2006-10-20 2012-07-25 精工爱普生株式会社 Mems器件及其制造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100355057C (zh) 2001-07-30 2007-12-12 三菱电机株式会社 电极构造、薄膜构造体的制造方法
JP3651671B2 (ja) * 2001-08-30 2005-05-25 株式会社東芝 マイクロメカニカルスイッチ及びその製造方法
JP3861813B2 (ja) * 2003-01-14 2006-12-27 株式会社デンソー 静電振動型デバイス
JP4377740B2 (ja) * 2004-04-28 2009-12-02 株式会社東芝 圧電駆動型ｍｅｍｓ素子およびこの圧電駆動型ｍｅｍｓ素子を有する移動体通信機
JP4385937B2 (ja) * 2004-12-15 2009-12-16 セイコーエプソン株式会社 アクチュエータ
KR100707193B1 (ko) * 2005-05-31 2007-04-13 삼성전자주식회사 복층 구조의 콤전극을 구비한 광스캐너
JP4438786B2 (ja) * 2005-11-17 2010-03-24 セイコーエプソン株式会社 Ｍｅｍｓ振動子及びその製造方法
JP4219383B2 (ja) * 2006-12-28 2009-02-04 日本航空電子工業株式会社 櫛歯型静電アクチュエータ
JP5332463B2 (ja) 2008-09-30 2013-11-06 セイコーエプソン株式会社 Ｍｅｍｓ・半導体複合素子
JP5541772B2 (ja) 2009-10-08 2014-07-09 三菱電機株式会社 電極構造
JP2011189423A (ja) * 2010-03-12 2011-09-29 Seiko Epson Corp Ｍｅｍｓ素子および発振器
JP2012129605A (ja) * 2010-12-13 2012-07-05 Seiko Epson Corp Ｍｅｍｓ振動子、発振器、およびｍｅｍｓ振動子の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1821050A (zh) * 2005-02-16 2006-08-23 精工爱普生株式会社 微机电系统元件及微机电系统元件的制造方法
CN102602876A (zh) * 2006-10-20 2012-07-25 精工爱普生株式会社 Mems器件及其制造方法
CN101177234A (zh) * 2006-11-08 2008-05-14 精工爱普生株式会社 电子装置及其制造方法
US20110013256A1 (en) * 2008-02-29 2011-01-20 Shingo Uchiyama Mems device and method of manufacturing the same
US20120134121A1 (en) * 2010-11-30 2012-05-31 Seiko Epson Corporation Electronic device, electronic apparatus, and method of manufacturing electronic device

Also Published As

Publication number Publication date
US9496806B2 (en) 2016-11-15
JP2014033335A (ja) 2014-02-20
US20140035433A1 (en) 2014-02-06

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Application publication date: 20140212