JP2013545303A5 - - Google Patents
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- Publication number
- JP2013545303A5 JP2013545303A5 JP2013536721A JP2013536721A JP2013545303A5 JP 2013545303 A5 JP2013545303 A5 JP 2013545303A5 JP 2013536721 A JP2013536721 A JP 2013536721A JP 2013536721 A JP2013536721 A JP 2013536721A JP 2013545303 A5 JP2013545303 A5 JP 2013545303A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- dielectric layer
- integrated circuit
- drain regions
- type dopant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 11
- 239000000758 substrate Substances 0.000 claims 8
- 239000007943 implant Substances 0.000 claims 6
- 239000002019 doping agent Substances 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 238000001816 cooling Methods 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 239000000110 cooling liquid Substances 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000002210 silicon-based material Substances 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US40636410P | 2010-10-25 | 2010-10-25 | |
| US61/406,364 | 2010-10-25 | ||
| US13/246,362 US8772103B2 (en) | 2010-10-25 | 2011-09-27 | Low temperature implant scheme to improve BJT current gain |
| US13/246,362 | 2011-09-27 | ||
| PCT/US2011/057679 WO2012061130A2 (en) | 2010-10-25 | 2011-10-25 | Low temperature implant to improve bjt current gain |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013545303A JP2013545303A (ja) | 2013-12-19 |
| JP2013545303A5 true JP2013545303A5 (https=) | 2014-12-11 |
Family
ID=45973373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013536721A Pending JP2013545303A (ja) | 2010-10-25 | 2011-10-25 | Ｂｊｔ電流利得を改善するための低温インプラント |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8772103B2 (https=) |
| JP (1) | JP2013545303A (https=) |
| CN (1) | CN103180934A (https=) |
| WO (1) | WO2012061130A2 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9299698B2 (en) * | 2012-06-27 | 2016-03-29 | Mie Fujitsu Semiconductor Limited | Semiconductor structure with multiple transistors having various threshold voltages |
| US10128113B2 (en) * | 2016-01-12 | 2018-11-13 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
| US9923083B1 (en) | 2016-09-09 | 2018-03-20 | International Business Machines Corporation | Embedded endpoint fin reveal |
| US10243048B2 (en) * | 2017-04-27 | 2019-03-26 | Texas Instruments Incorporated | High dose antimony implant through screen layer for n-type buried layer integration |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH027422A (ja) * | 1988-06-24 | 1990-01-11 | Ricoh Co Ltd | レーザによる高温熱処理方法 |
| US5244820A (en) * | 1990-03-09 | 1993-09-14 | Tadashi Kamata | Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method |
| JPH1032274A (ja) | 1996-04-12 | 1998-02-03 | Texas Instr Inc <Ti> | Ｃｍｏｓプロセスによるバイポーラートランジスタ作製方法 |
| JP3638424B2 (ja) * | 1997-01-20 | 2005-04-13 | 株式会社東芝 | 半導体装置の製造方法及び半導体製造装置 |
| JP2001068427A (ja) * | 1999-08-26 | 2001-03-16 | Ulvac Japan Ltd | 基板冷却装置 |
| JP2001210735A (ja) * | 2000-01-27 | 2001-08-03 | Mitsumi Electric Co Ltd | Ｃｍｏｓデバイス及びｃｍｏｓデバイスの製造方法 |
| US7993698B2 (en) * | 2006-09-23 | 2011-08-09 | Varian Semiconductor Equipment Associates, Inc. | Techniques for temperature controlled ion implantation |
| KR20100103627A (ko) * | 2007-12-21 | 2010-09-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판의 온도를 제어하기 위한 방법 및 장치 |
| KR20100074625A (ko) | 2008-12-24 | 2010-07-02 | 주식회사 하이닉스반도체 | 반도체 소자의 채널 정션 형성 방법 |
-
2011
- 2011-09-27 US US13/246,362 patent/US8772103B2/en active Active
- 2011-10-25 JP JP2013536721A patent/JP2013545303A/ja active Pending
- 2011-10-25 CN CN2011800512790A patent/CN103180934A/zh active Pending
- 2011-10-25 WO PCT/US2011/057679 patent/WO2012061130A2/en not_active Ceased
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