CN103180934A - 用于提高bjt电流增益的低温注入 - Google Patents

用于提高bjt电流增益的低温注入 Download PDF

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Publication number
CN103180934A
CN103180934A CN2011800512790A CN201180051279A CN103180934A CN 103180934 A CN103180934 A CN 103180934A CN 2011800512790 A CN2011800512790 A CN 2011800512790A CN 201180051279 A CN201180051279 A CN 201180051279A CN 103180934 A CN103180934 A CN 103180934A
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CN
China
Prior art keywords
atoms
dose
substrate
integrated circuit
implant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011800512790A
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English (en)
Chinese (zh)
Inventor
M-Y·状
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of CN103180934A publication Critical patent/CN103180934A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/226—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping at a temperature lower than room temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Amplifiers (AREA)
CN2011800512790A 2010-10-25 2011-10-25 用于提高bjt电流增益的低温注入 Pending CN103180934A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US40636410P 2010-10-25 2010-10-25
US61/406,364 2010-10-25
US13/246,362 US8772103B2 (en) 2010-10-25 2011-09-27 Low temperature implant scheme to improve BJT current gain
US13/246,362 2011-09-27
PCT/US2011/057679 WO2012061130A2 (en) 2010-10-25 2011-10-25 Low temperature implant to improve bjt current gain

Publications (1)

Publication Number Publication Date
CN103180934A true CN103180934A (zh) 2013-06-26

Family

ID=45973373

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011800512790A Pending CN103180934A (zh) 2010-10-25 2011-10-25 用于提高bjt电流增益的低温注入

Country Status (4)

Country Link
US (1) US8772103B2 (https=)
JP (1) JP2013545303A (https=)
CN (1) CN103180934A (https=)
WO (1) WO2012061130A2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9299698B2 (en) * 2012-06-27 2016-03-29 Mie Fujitsu Semiconductor Limited Semiconductor structure with multiple transistors having various threshold voltages
US10128113B2 (en) * 2016-01-12 2018-11-13 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
US9923083B1 (en) 2016-09-09 2018-03-20 International Business Machines Corporation Embedded endpoint fin reveal
US10243048B2 (en) * 2017-04-27 2019-03-26 Texas Instruments Incorporated High dose antimony implant through screen layer for n-type buried layer integration

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5244820A (en) * 1990-03-09 1993-09-14 Tadashi Kamata Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method
US6030864A (en) * 1996-04-12 2000-02-29 Texas Instruments Incorporated Vertical NPN transistor for 0.35 micrometer node CMOS logic technology
KR20100074625A (ko) * 2008-12-24 2010-07-02 주식회사 하이닉스반도체 반도체 소자의 채널 정션 형성 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH027422A (ja) * 1988-06-24 1990-01-11 Ricoh Co Ltd レーザによる高温熱処理方法
JP3638424B2 (ja) * 1997-01-20 2005-04-13 株式会社東芝 半導体装置の製造方法及び半導体製造装置
JP2001068427A (ja) * 1999-08-26 2001-03-16 Ulvac Japan Ltd 基板冷却装置
JP2001210735A (ja) * 2000-01-27 2001-08-03 Mitsumi Electric Co Ltd Ｃｍｏｓデバイス及びｃｍｏｓデバイスの製造方法
US7993698B2 (en) * 2006-09-23 2011-08-09 Varian Semiconductor Equipment Associates, Inc. Techniques for temperature controlled ion implantation
KR20100103627A (ko) * 2007-12-21 2010-09-27 어플라이드 머티어리얼스, 인코포레이티드 기판의 온도를 제어하기 위한 방법 및 장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5244820A (en) * 1990-03-09 1993-09-14 Tadashi Kamata Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method
US6030864A (en) * 1996-04-12 2000-02-29 Texas Instruments Incorporated Vertical NPN transistor for 0.35 micrometer node CMOS logic technology
KR20100074625A (ko) * 2008-12-24 2010-07-02 주식회사 하이닉스반도체 반도체 소자의 채널 정션 형성 방법

Also Published As

Publication number Publication date
WO2012061130A2 (en) 2012-05-10
US20120100680A1 (en) 2012-04-26
WO2012061130A3 (en) 2012-06-28
US8772103B2 (en) 2014-07-08
JP2013545303A (ja) 2013-12-19

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