JP2013541831A - 半導体素子の製造方法 - Google Patents
半導体素子の製造方法 Download PDFInfo
- Publication number
- JP2013541831A JP2013541831A JP2013525848A JP2013525848A JP2013541831A JP 2013541831 A JP2013541831 A JP 2013541831A JP 2013525848 A JP2013525848 A JP 2013525848A JP 2013525848 A JP2013525848 A JP 2013525848A JP 2013541831 A JP2013541831 A JP 2013541831A
- Authority
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- Prior art keywords
- semiconductor device
- amorphous silicon
- manufacturing
- multilayer structure
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 73
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 85
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 81
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 81
- 239000010703 silicon Substances 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 18
- 239000012686 silicon precursor Substances 0.000 claims abstract description 12
- 239000002019 doping agent Substances 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 21
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 21
- 239000007789 gas Substances 0.000 claims description 19
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 12
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Abstract
Description
化学気相蒸着装置のチェンバー内部に基板を装着する工程と,
前記基板が装着されたチェンバー内部への,シリコン前駆体及び導電性を有するドーパント(dopant)の注入による,前記基板上への,ドーピングされた非晶質シリコン層の形成と,前記基板が装着されたチェンバー内部への,シリコン前駆体及び反応ガスの注入による,前記基板上への,シリコンを含む絶縁層の形成とを交互に繰り返し,複数の前記ドーピングされた非晶質シリコン層及び複数の前記絶縁層が交互に積層された多層構造を形成する工程と,
を含む。
Claims (13)
- 化学気相蒸着装置のチェンバー内部に基板を装着する工程と,
前記基板が装着されたチェンバー内部への,シリコン前駆体及び導電性を有するドーパントの注入による,前記基板上への,ドーピングされた非晶質シリコン層の形成と,前記基板が装着されたチェンバー内部への,シリコン前駆体及び反応ガスの注入による,前記基板上への,シリコンを含む絶縁層の形成とを交互に繰り返し,複数の前記ドーピングされた非晶質シリコン層及び複数の前記絶縁層が交互に積層された多層構造を形成する工程と,
を含む半導体素子の製造方法。 - 前記化学気相蒸着装置は,低圧化学気相蒸着装置であることを特徴とする請求項1記載の半導体素子の製造方法。
- 前記ドーピングされた非晶質シリコン層の形成及び前記絶縁層の形成は,前記基板の温度を一定に維持しながら行われることを特徴とする請求項1記載の半導体素子の製造方法。
- 前記ドーピングされた非晶質シリコン層の形成及び前記絶縁層の形成は,前記基板の温度を500℃乃至650℃に維持しながら行われることを特徴とする請求項3記載の半導体素子の製造方法。
- 前記ドーピングされた非晶質シリコン層の形成及び前記絶縁層の形成は,前記チェンバー内部の圧力を一定に維持しながら行われることを特徴とする請求項1記載の半導体素子の製造方法。
- 前記ドーピングされた非晶質シリコン層の形成及び前記絶縁層の形成は,前記チェンバー内部の圧力を10Torr乃至300Torrに維持しながら行われることを特徴とする請求項5記載の半導体素子の製造方法。
- 前記ドーピングされた非晶質シリコン層は,p型の導電性を有することを特徴とする請求項1記載の半導体素子の製造方法。
- 前記導電性を有するドーパントは,B2H6又はBCl3ガスであることを特徴とする請求項7記載の半導体素子の製造方法。
- 前記シリコンを含む絶縁層は,シリコン酸化膜又はシリコン窒化膜であることを特徴とする請求項1記載の半導体素子の製造方法。
- 前記多層構造を形成する工程は,
前記多層構造に積層された,複数の前記ドーピングされた非晶質シリコンが,非晶質状態を維持するように行われることを特徴とする請求項1記載の半導体素子の製造方法。 - 前記シリコン前駆体は,SiH4,Si2H6,Si3H8及びSi4H10を含むガス群から選択された一つ以上のガスであることを特徴とする請求項1記載の半導体素子の製造方法。
- 前記多層構造は,
n個の前記ドーピングされた非晶質シリコン層及びn−1個の前記絶縁層を含み(但し,nは2以上の正の整数),
n個の前記ドーピングされた非晶質シリコン層それぞれの間に,1つの前記絶縁層が配置されるように形成されることを特徴とする請求項1記載の半導体素子の製造方法。 - 前記多層構造は,
m個の前記絶縁層及びm−1個の前記ドーピングされた非晶質シリコン層を含み(但し,mは2以上の正の整数),
m個の前記絶縁層それぞれの間に,1つの前記ドーピングされた非晶質シリコン層が配置されるように形成されることを特徴とする請求項1記載の半導体素子の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100086964A KR101176900B1 (ko) | 2010-09-06 | 2010-09-06 | 반도체 소자의 제조 방법 |
KR10-2010-0086964 | 2010-09-06 | ||
PCT/KR2011/006485 WO2012033305A2 (ko) | 2010-09-06 | 2011-09-01 | 반도체 소자의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013541831A true JP2013541831A (ja) | 2013-11-14 |
JP5642282B2 JP5642282B2 (ja) | 2014-12-17 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2013525848A Expired - Fee Related JP5642282B2 (ja) | 2010-09-06 | 2011-09-01 | 半導体素子の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20130130480A1 (ja) |
JP (1) | JP5642282B2 (ja) |
KR (1) | KR101176900B1 (ja) |
CN (1) | CN103081063B (ja) |
WO (1) | WO2012033305A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020526920A (ja) * | 2017-07-06 | 2020-08-31 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 複数の堆積した半導体層のスタックを形成する方法 |
WO2023153203A1 (ja) * | 2022-02-08 | 2023-08-17 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140049313A (ko) * | 2012-10-17 | 2014-04-25 | 에스케이하이닉스 주식회사 | 반도체 소자의 정렬 키 및 이의 형성 방법 |
KR101551199B1 (ko) * | 2013-12-27 | 2015-09-10 | 주식회사 유진테크 | 사이클릭 박막 증착 방법 및 반도체 제조 방법, 그리고 반도체 소자 |
CN106876401B (zh) * | 2017-03-07 | 2018-10-30 | 长江存储科技有限责任公司 | 存储器件的形成方法 |
KR102542624B1 (ko) | 2018-07-17 | 2023-06-15 | 삼성전자주식회사 | 반도체 소자 및 이의 제조 방법 |
US20200135489A1 (en) * | 2018-10-31 | 2020-04-30 | Atomera Incorporated | Method for making a semiconductor device including a superlattice having nitrogen diffused therein |
CN111403414B (zh) * | 2020-03-30 | 2023-06-27 | 长江存储科技有限责任公司 | 三维存储器及其形成方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6337229B1 (en) * | 1994-12-16 | 2002-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of making crystal silicon semiconductor and thin film transistor |
JPH1117109A (ja) * | 1997-06-23 | 1999-01-22 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US6635556B1 (en) * | 2001-05-17 | 2003-10-21 | Matrix Semiconductor, Inc. | Method of preventing autodoping |
US7651910B2 (en) * | 2002-05-17 | 2010-01-26 | Micron Technology, Inc. | Methods of forming programmable memory devices |
US7229869B2 (en) * | 2005-03-08 | 2007-06-12 | Texas Instruments Incorporated | Method for manufacturing a semiconductor device using a sidewall spacer etchback |
KR100914284B1 (ko) * | 2006-12-29 | 2009-08-27 | 주식회사 하이닉스반도체 | 반도체 소자의 듀얼 폴리게이트 및 그 형성방법 |
KR20090079694A (ko) * | 2008-01-18 | 2009-07-22 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 제조 방법 |
JP5356005B2 (ja) * | 2008-12-10 | 2013-12-04 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
JP5330027B2 (ja) * | 2009-02-25 | 2013-10-30 | 株式会社東芝 | 不揮発性半導体記憶装置、及びその製造方法 |
US8362482B2 (en) * | 2009-04-14 | 2013-01-29 | Monolithic 3D Inc. | Semiconductor device and structure |
-
2010
- 2010-09-06 KR KR1020100086964A patent/KR101176900B1/ko active IP Right Grant
-
2011
- 2011-09-01 US US13/813,978 patent/US20130130480A1/en not_active Abandoned
- 2011-09-01 CN CN201180042742.5A patent/CN103081063B/zh not_active Expired - Fee Related
- 2011-09-01 JP JP2013525848A patent/JP5642282B2/ja not_active Expired - Fee Related
- 2011-09-01 WO PCT/KR2011/006485 patent/WO2012033305A2/ko active Application Filing
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020526920A (ja) * | 2017-07-06 | 2020-08-31 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 複数の堆積した半導体層のスタックを形成する方法 |
US11056406B2 (en) | 2017-07-06 | 2021-07-06 | Applied Materials, Inc. | Stack of multiple deposited semiconductor layers |
JP7007407B2 (ja) | 2017-07-06 | 2022-02-10 | アプライド マテリアルズ インコーポレイテッド | 複数の堆積した半導体層のスタックを形成する方法 |
WO2023153203A1 (ja) * | 2022-02-08 | 2023-08-17 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2012033305A2 (ko) | 2012-03-15 |
KR101176900B1 (ko) | 2012-08-30 |
KR20120024200A (ko) | 2012-03-14 |
WO2012033305A3 (ko) | 2012-06-28 |
US20130130480A1 (en) | 2013-05-23 |
CN103081063B (zh) | 2016-08-03 |
CN103081063A (zh) | 2013-05-01 |
WO2012033305A8 (ko) | 2013-01-10 |
JP5642282B2 (ja) | 2014-12-17 |
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