JP7007407B2 - 複数の堆積した半導体層のスタックを形成する方法 - Google Patents
複数の堆積した半導体層のスタックを形成する方法 Download PDFInfo
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- JP7007407B2 JP7007407B2 JP2019572665A JP2019572665A JP7007407B2 JP 7007407 B2 JP7007407 B2 JP 7007407B2 JP 2019572665 A JP2019572665 A JP 2019572665A JP 2019572665 A JP2019572665 A JP 2019572665A JP 7007407 B2 JP7007407 B2 JP 7007407B2
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- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
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Description
[0001] 本出願は、2017年7月6日に出願された、「METHODS OF FORMING A STACK OF MULTIPLE DEPOSITED SEMICONDUCTOR LAYERS」という名称の、Miaoらによる米国特許仮出願第62/529,207号の利益を主張し、あらゆる目的においてその全体が参照によって本明細書に組み込まれる。
A.概説
[0027] 低圧化学気相堆積(LPCVD)は、図1及び図2で示されたものと類似した、OPNPスタック向けに層を堆積させるために使用されてよい。酸化ケイ素及びシリコン(ポリシリコンであってもアモルファスシリコンであっても)の層は、圧縮された層であってよい。窒化ケイ素は、引張層(tensile layer)であってよい。圧縮応力と引張応力は、相殺することなしに引張力をもたらすことがある。結果として、基板又はウエハは反ることがある。応力を補償するために、LPCVDを使用して応力層を堆積させることができる。応力層は、ウエハの裏側上に窒化ケイ素層又は他の引張膜を含み、図3で示されているスタックをもたらす。他の引張膜は、SACVD酸化物及びLPCVD SiONを含んでよい。図3は、酸化ケイ素層304、ポリシリコン又はアモルファスシリコン層306、窒化ケイ素層308、及びポリシリコン又はアモルファスシリコン層310のOPNPスタックを有する基板302を有する。基板302の底部上には、応力層312がある。
[0028] 図4で示されているように、本技術の実施形態は、半導体層のスタックを形成する方法400を含んでよい。方法400は、基板上に第1の酸化ケイ素層を堆積させることを含んでよい(ブロック402)。基板は、シリコンウエハを含む半導体ウエハであってよい。他の実施形態では、基板は、ウエハ及びウエハ上の更なる層を含んでよい。
A.概説
[0040] プラズマ化学気相堆積(PECVD)をLPCVDの代わりに使用して、半導体層のスタックを形成することができる。PECVDは、全ての層が、複数のチャンバの代わりに単一のチャンバ内で処理されることを可能にし得る。結果として、PECVDは、より効率的であり、費用効果に優れ、より少ない欠点を有し得る。PECVDは、基板の表側の取り扱い(handling)を避けることもできる。基板の裏側上に窒化ケイ素の層を堆積させる代わりに、PECVDを使用する実施形態は、窒化ケイ素層によってもたらされる応力を管理するために、種々のレシピを使用してよい。このやり方では、水反り(water bow)が最小化され得る。窒化ケイ素の堆積中のヘリウムの流量を含め、特定の範囲のRF電力を使用すると、窒化ケイ素層の応力に影響することが観察された。更に、シリコンを堆積させるときに使用される窒素とアンモニアによるプラズマは、下にある窒化ケイ素へのシリコンの接着を改善することが観察された。全ての層は、PECVDで堆積させることができる。実施形態は、LPCVDを含む他の方法での層の堆積を除外することができる。
[0041] 図5で示されているように、本技術の実施形態は、半導体層のスタックを形成する方法500を含んでよい。方法500は、基板上に第1の酸化ケイ素層を堆積させることを含んでよい(ブロック502)。基板は、本明細書で説明される任意の基板であってよい。第1の酸化ケイ素層は、本明細書で説明される任意の酸化ケイ素層であってよい。第1の酸化ケイ素層は、PECVDによって堆積されてよい。
[0051] 図6で示されているように、実施形態は、半導体基板上の窒化ケイ素層内の応力を管理する方法600を含んでよい。半導体基板は、シリコン基板上の酸化ケイ素層上にシリコン層を含んでよい。シリコン基板は、シリコンウエハであってよい。シリコン層は、本明細書で説明される任意のシリコン層であってよい。酸化ケイ素層は、本明細書で説明される任意の酸化ケイ素層であってよい。
実施例 1
[0057] 窒化ケイ素層内の応力レベルが、種々のヘリウムの流量に対して測定された。ヘリウムの流量は、1,000sccmから6,250sccmの間で変動した。RF電力は250Wで一定だった。温度は摂氏480度で一定だった。シランの流量は112sccmだった。窒素の流量は10,000sccmだった。そして、アンモニアの流量は1,860sccmだった。堆積した窒化ケイ素層の厚さは、約1,800オングストロームから約2,000オングストロームの範囲内だった。窒化物層内で結果として生じた応力は、図7に示されている。応力は、約200MPaから約600MPaの範囲内だった。より高いレベルのヘリウムの流量が、より小さい応力をもたらした。
[0058] 窒化ケイ素層内の応力レベルが、ヘリウムの流量なしに種々のRF電力に対して測定された。RF電力は、250Wから550Wの間で変動した。ヘリウムの流量は0sccmで一定だった。温度は摂氏480度で一定だった。シランの流量は112sccmだった。窒素の流量は10,000sccmだった。そして、アンモニアの流量は1,860sccmだった。堆積した窒化ケイ素層の厚さは、約2,000オングストロームから約3,700オングストロームの範囲内だった。窒化物層内で結果として生じた応力は、図8に示されている。応力は、約-880MPaから約700MPaの範囲内だった。より高いRF電力は、より低いレベルの絶対応力をもたらした。最も小さい大きさの応力は、約350Wで観察された。
[0059] 窒化ケイ素層内の応力レベルが、ヘリウムの流量が9,000sccmで種々のRF電力に対して測定された。RF電力は、200Wから550Wの間で変動した。ヘリウムの流量は9,000sccmで一定だった。温度は摂氏480度で一定だった。シランの流量は112sccmだった。窒素の流量は10,000sccmだった。そして、アンモニアの流量は1,860sccmだった。堆積した窒化ケイ素層の厚さは、約1,500オングストロームから約2,900オングストロームの範囲内だった。窒化物層内で結果として生じた応力は、図9に示されている。応力は、約-1,500MPaから約550MPaの範囲内だった。より高いRF電力は、より低いレベルの絶対応力をもたらした。ヘリウムの流れがないかヘリウムの流量が9,000sccmの両方で、より高いRF電力でより低い応力が生じる傾向が存在する。図8及び図9において見られるように、ヘリウムの更なる流量は、窒化ケイ素層内の応力を更に低くした。
[0060] 図10A、図10B、及び図10Cは、本技術の実施形態による、PECVDで堆積したOPNP層の8つの組の断面走査電子顕微鏡(SEM)像を示している。RF電力は250Wだった。ヘリウムの流量は、6,250sccmだった。繰り返されたスタックは、300オングストロームの酸化ケイ素の上端上の300オングストロームのドープされていないアモルファスシリコン上の500オングストロームの窒化ケイ素上の300オングストロームのドープされていないアモルファスシリコンであった。図10Aにおける矩形1010内の上部層は、図10Bにおいて描かれている。図10Aにおける矩形1020内の底部層は、図10Cにおいて描かれている。均一性に対して予測された標準偏差は1.33%であった。
[0061] 図11A、図11B、及び図11Cは、本技術の実施形態による、LPCVDで堆積されたOPNP層の8つの組の断面SEM像を示している。繰り返されたスタックは、300オングストロームの酸化ケイ素の上端上の300オングストロームのドープされていないアモルファスシリコン上の500オングストロームの窒化ケイ素上の300オングストロームのドープされていないアモルファスシリコンであった。表側上のOPNP層の2つの組を堆積させた後で、1,000オングストロームの窒化ケイ素が裏側上に堆積された。OPNP層の8つの組に対して、ウエハは合計3回反転され、1,000オングストロームの窒化ケイ素が3回堆積された。図11Aにおける矩形1110内の上部層は、図11Bにおいて描かれている。図11Aにおける矩形1120内の底部層は、図11Cにおいて描かれている。均一性に対して予測された標準偏差は2.75%であった。図10A、図10B、及び図10CにおいてPECVDによって堆積されたスタックは、図11A、図11B、及び図11CにおいてLPCVDによって堆積されたスタックよりも、優れた均一性及び粗さを有していた。LPCVDの均一性及び粗さがより悪い部分は、スタック内の粒子の存在によるものだった。これらの粒子欠陥がなければ、LPCVDの均一性及び粗さは改善されるだろうが、未だPECVDのレベルには多分至らないだろう。
A.LPCVD
[0062] 図12は、実施形態による、堆積チャンバ、エッチングチャンバ、ベーキングチャンバ、及び硬化チャンバの処理システム1200の一実施形態の上面図を示している。図12で描かれている処理システム1200は、複数の処理チャンバ1214A~D、移送チャンバ1210、保守チャンバ1216、統合計測(integrated metrology)チャンバ1217、及び一対のロードロックチャンバ1206A~Bを含んでよい。プロセスチャンバは、更なる処理チャンバのみならず、LPCVDに関して説明されたものと同様な構造物又は構成要素を含んでよい。
[0076] 図14は、基板処理チャンバ1401内の仕切られた領域を有する、例示的な基板処理チャンバ1401の断面図を示している。仕切られた領域は、基板処理領域1433に対して仕切られているため、本明細書では遠隔チャンバ領域と呼ばれることになる。遠隔プラズマシステム(RPS)1402は、示されている基板処理チャンバ1401上に又はその外部に存在してよい。RPS1402は、不活性供給ライン1411を通して供給される不活性ガスを励起させるために使用されてよい。次いで、RPS1402内で生成されるプラズマ放出物は、放出物混合領域1405の中に移動し、酸化前駆体供給ライン1412を通して供給される酸化前駆体と混合される。
Claims (7)
- 半導体層のスタックを形成する方法であって、
基板上に第1の酸化ケイ素層を堆積させること、
前記第1の酸化ケイ素層上に第1のシリコン層を堆積させること、
前記第1のシリコン層上に第1の窒化ケイ素層を堆積させること、
前記第1の窒化ケイ素層上に第2のシリコン層を堆積させること、並びに
前記第1の酸化ケイ素層を有する前記基板の片側とは反対側の前記基板の片側上に応力層を堆積させて、前記第1の酸化ケイ素層、前記第1のシリコン層、前記第1の窒化ケイ素層、及び前記第2のシリコン層を含む、前記半導体層のスタックを形成することを含み、
前記応力層を堆積させることが、前記第1の酸化ケイ素層を堆積させた後且つ前記第2のシリコン層を堆積させる前である、方法。 - 前記応力層を堆積させることが、前記第1の窒化ケイ素層を堆積させた後且つ前記第2のシリコン層を堆積させる前である、請求項1に記載の方法。
- 半導体層のスタックを形成する方法であって、
基板上に第1の酸化ケイ素層を堆積させること、
前記第1の酸化ケイ素層上に第1のシリコン層を堆積させること、
前記第1のシリコン層上に第1の窒化ケイ素層を堆積させること、
前記第1の窒化ケイ素層上に第2のシリコン層を堆積させること、
前記第1の酸化ケイ素層を有する前記基板の片側とは反対側の前記基板の片側上に応力層を堆積させて、前記第1の酸化ケイ素層、前記第1のシリコン層、前記第1の窒化ケイ素層、及び前記第2のシリコン層を含む、前記半導体層のスタックを形成すること、並びに
前記第2のシリコン層上にさらなる層を堆積させることを含み、
前記応力層を堆積させることが、前記第2のシリコン層を堆積させた後且つ前記さらなる層を堆積させる前である、方法。 - 前記応力層が、第2の窒化ケイ素層である、請求項1から3のいずれか一項に記載の方法。
- 前記応力層を堆積させることが、前記基板が閾値を超える反りによって特徴付けられた後である、請求項1から4のいずれか一項に記載の方法。
- 前記応力層を堆積させた後で、前記基板が前記閾値を超えない反りによって特徴付けられる、請求項5に記載の方法。
- 前記第1の酸化ケイ素層、前記第1のシリコン層、前記第1の窒化ケイ素層、前記第2のシリコン層、及び前記応力層を堆積させることが、低圧化学気相堆積によるものである、請求項1から6のいずれか一項に記載の方法。
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