JP2013541165A5 - - Google Patents

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Publication number
JP2013541165A5
JP2013541165A5 JP2013533165A JP2013533165A JP2013541165A5 JP 2013541165 A5 JP2013541165 A5 JP 2013541165A5 JP 2013533165 A JP2013533165 A JP 2013533165A JP 2013533165 A JP2013533165 A JP 2013533165A JP 2013541165 A5 JP2013541165 A5 JP 2013541165A5
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JP
Japan
Prior art keywords
ion gun
ionized gas
switchable
ion
gas
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JP2013533165A
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English (en)
Japanese (ja)
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JP2013541165A (ja
JP5808815B2 (ja
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Priority claimed from GB1017173.4A external-priority patent/GB2484488B/en
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Publication of JP2013541165A publication Critical patent/JP2013541165A/ja
Publication of JP2013541165A5 publication Critical patent/JP2013541165A5/ja
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Publication of JP5808815B2 publication Critical patent/JP5808815B2/ja
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JP2013533165A 2010-10-12 2011-10-10 イオン銃の改良及びイオン銃に関連する改良 Active JP5808815B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1017173.4 2010-10-12
GB1017173.4A GB2484488B (en) 2010-10-12 2010-10-12 Improvements in and relating to ion guns
PCT/EP2011/067626 WO2012049110A2 (en) 2010-10-12 2011-10-10 Improvements in and relating to ion guns

Publications (3)

Publication Number Publication Date
JP2013541165A JP2013541165A (ja) 2013-11-07
JP2013541165A5 true JP2013541165A5 (https=) 2014-10-02
JP5808815B2 JP5808815B2 (ja) 2015-11-10

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Family Applications (1)

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JP2013533165A Active JP5808815B2 (ja) 2010-10-12 2011-10-10 イオン銃の改良及びイオン銃に関連する改良

Country Status (5)

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US (1) US9478388B2 (https=)
JP (1) JP5808815B2 (https=)
CN (1) CN203466162U (https=)
GB (1) GB2484488B (https=)
WO (1) WO2012049110A2 (https=)

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CN103180030B (zh) 2010-08-23 2017-04-12 艾克索乔纳斯公司 基于气体团簇离子束技术的中性射束处理方法和设备
US10825685B2 (en) 2010-08-23 2020-11-03 Exogenesis Corporation Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
US10181402B2 (en) * 2010-08-23 2019-01-15 Exogenesis Corporation Method and apparatus for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
JP2014086247A (ja) * 2012-10-23 2014-05-12 Canon Inc 超音速ビーム装置
US8963081B2 (en) * 2013-03-06 2015-02-24 Canon Kabushiki Kaisha Mass selector, and ion gun, ion irradiation apparatus and mass microscope
US8993982B2 (en) 2013-07-15 2015-03-31 Vg Systems Limited Switchable ion gun with improved gas inlet arrangement
JP2015138667A (ja) * 2014-01-22 2015-07-30 アルバック・ファイ株式会社 イオン源、イオン銃、分析装置
CN103956314B (zh) * 2014-05-04 2016-02-17 北京大学 一种微波驱动无铯负氢离子源
JP6566683B2 (ja) * 2014-07-02 2019-08-28 東京エレクトロン株式会社 基板洗浄方法および基板洗浄装置
JP6331960B2 (ja) * 2014-10-21 2018-05-30 住友金属鉱山株式会社 薄膜状の試料の前処理方法および分析方法
US11127909B2 (en) 2016-03-24 2021-09-21 Sony Corporation Photoelectric conversion element, measuring method of the same, solid-state imaging device, electronic device, and solar cell
JP6632937B2 (ja) * 2016-06-27 2020-01-22 アールエムテック株式会社 ガスクラスタービーム装置
CN107121694A (zh) * 2017-05-26 2017-09-01 宜昌后皇真空科技有限公司 一种在线监测脉冲气体团簇离子束的方法及系统
CN107393794B (zh) * 2017-08-07 2019-09-10 深圳江海行纳米科技有限公司 一种气体团簇离子源产生方法及装置
CN109862684B (zh) * 2018-12-21 2020-07-10 南京大学 单一尺寸强流团簇脉冲束产生方法
EP3705877A1 (en) * 2019-03-04 2020-09-09 VG Systems Limited Methods and apparatus for electron backscatter diffraction sample characterisation
CN110473765B (zh) * 2019-08-30 2024-04-26 西安交通大学 一种表面活化过程中高速氩原子束获得装置及获得方法
CN117012314B (zh) * 2023-08-11 2025-09-16 中国科学院深圳先进技术研究院 一种团簇动力学性质的表征分析方法、系统、电子设备及存储介质

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JPH0831305B2 (ja) * 1986-09-25 1996-03-27 ソニー株式会社 イオンビ−ム装置
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