JP2013530582A - 利得範囲選択を備えた電磁放射線検出器 - Google Patents
利得範囲選択を備えた電磁放射線検出器 Download PDFInfo
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- 230000005670 electromagnetic radiation Effects 0.000 title claims abstract description 14
- 230000005855 radiation Effects 0.000 claims abstract description 36
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- 238000003384 imaging method Methods 0.000 abstract description 3
- 239000003990 capacitor Substances 0.000 description 35
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- 239000000463 material Substances 0.000 description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- -1 rare earth oxysulfides Chemical class 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
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- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/243—Modular detectors, e.g. arrays formed from self contained units
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/247—Detector read-out circuitry
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
- H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
- H04N25/585—Control of the dynamic range involving two or more exposures acquired simultaneously with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
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- Spectroscopy & Molecular Physics (AREA)
- Multimedia (AREA)
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- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
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Abstract
Description
・ 複数の感光性要素であって、各感光性要素はそれが受けた電磁放射線を基本電気信号に変換する感光性要素と;
・ 検出器に対して選択された利得範囲に応じて画素の電気出力信号を形成するように、画素の感光性要素によって生成された基本電気信号から選択するための手段。
Claims (11)
- 行および列のアレイ状に組織された複数の画素(10、30、40)を含む、電磁放射線を検出するための検出器であって、画素の各列または各行が前記アレイの同じ読み取りバス(26)に接続され、画素が前記検出器の基本感受性要素を示し、各画素が、それが受ける電磁放射線(13)を電気信号に変換する検出器であって、各画素(10、30、40)が:
・ 複数の感光性要素(11、13;41〜49)であって、各感光性要素が前記感光性要素(11、12;41〜49)によって受けた放射線を基本電気信号に変換する感光性要素(11、13;41〜49)と;
・ 前記検出器に対して選択された利得範囲に応じて、画素(10、30、40)の電気出力信号を形成するように、前記画素(10、30、40)の前記感光性要素(11、12;41〜49)によって生成された前記基本電気信号から選択する選択手段(14、15;31、32)とを含むことを特徴とする検出器。 - 前記基本電気信号が、電圧の形態で、前記感光性要素(11、12;41〜49)によって蓄積された電荷から形成されることと、前記電気出力信号が、前記1つまたは複数の選択された感光性要素(11、12;41〜49)から電圧の平均によって形成されることとを特徴とする、請求項1に記載の検出器。
- 各画素(10)が、前記画素(10)を作動させるためのアクチュエータ(19)を含み、前記アクチュエータが、各フォトダイオード(11、12)の前記基本電気信号が形成される画像取得段階中オフにされ、前記電気出力信号が前記検出器の読み取り回路(20)に転送される画素(10)読み取り段階中オンにされることと、前記基本電気信号を選択するための手段が、それぞれ前記感光性要素(11、12)の少なくとも1つを前記アクチュエータ(19)に接続させる少なくとも1つの選択スイッチ(14、15)を含むこととを特徴とする、請求項1または2に記載の検出器。
- 各画素(10)がN個の感光性要素(11、12)およびN−1個の選択スイッチ(14、15)を含み、Nは2以上であり、前記感光性要素(11、12)のうちの1つは、前記読み取りアクチュエータ(19)に永久に接続されることを特徴とする、請求項3に記載の検出器。
- 前記読み取りアクチュエータ(19)に永久に接続される前記感光性要素(12)が、所定の電磁放射線(13)に対して、前記1つまたは複数の他の感光性要素(11)によって生成された前記1つまたは複数の基本信号より小さい基本信号を生成することを特徴とする、請求項4に記載の検出器。
- 各画素(30)が、各感光性要素(11、12)に関連して、前記画素(30)を読み取るための読み取りアクチュエータ(31、32)を含み、前記アクチュエータは、前記基本電気信号が形成される画像取得段階中オフにされ、前記電気出力信号が前記検出器の読み取り回路(20)に転送される前記画素(30)の読み取るための段階中おそらくオンにされ、前記画素(30)の1つのアクチュエータ(31、32)を閉じることにより、前記画素(30)の前記電気出力信号を形成するように意図されている、前記感光性要素(11、12)のうちの1つを選択できることを特徴とする、請求項1に記載の検出器。
- 1つの感光性要素が、受けた前記放射線を単一の基本電気信号に変換する複数の光検出器(42〜49)から形成されることを特徴とする、請求項1〜6のいずれか一項に記載の検出器。
- 各画素(40)が、第2の利得範囲に使用可能な第2の感光性要素を形成する複数の光検出器(42〜49)に囲まれた、第1の利得範囲に使用可能な第1の感光性要素(41)を含むことを特徴とする、請求項7に記載の検出器。
- 請求項1〜8のいずれか一項に記載の検出器が、入射放射線(X)を前記感光性要素が敏感な波長範囲の放射線に変換するシンチレータ(63)を含むことを特徴とする検出器。
- 前記画素が単色であることを特徴とする、請求項1〜9のいずれか一項に記載の検出器。
- 請求項1〜10のいずれか一項に記載の検出器が、前記画素(10、30、40)が配置されている基板(61)から形成されていることを特徴とする検出器。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1053181 | 2010-04-26 | ||
FR1053181A FR2959320B1 (fr) | 2010-04-26 | 2010-04-26 | Detecteur de rayonnement electromagnetique a selection de gamme de gain |
PCT/EP2011/056590 WO2011134965A1 (fr) | 2010-04-26 | 2011-04-26 | Detecteur de rayonnement electromagnetique a selection de gamme de gain |
Publications (2)
Publication Number | Publication Date |
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JP2013530582A true JP2013530582A (ja) | 2013-07-25 |
JP6057217B2 JP6057217B2 (ja) | 2017-01-11 |
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Application Number | Title | Priority Date | Filing Date |
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JP2013506635A Active JP6057217B2 (ja) | 2010-04-26 | 2011-04-26 | 利得範囲選択を備えた電磁放射線検出器 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9476992B2 (ja) |
EP (1) | EP2564239B1 (ja) |
JP (1) | JP6057217B2 (ja) |
CN (1) | CN103038666B (ja) |
CA (1) | CA2797531A1 (ja) |
FR (1) | FR2959320B1 (ja) |
WO (1) | WO2011134965A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020109971A (ja) * | 2014-10-08 | 2020-07-16 | パナソニックIpマネジメント株式会社 | 撮像装置およびその駆動方法 |
US11172155B2 (en) | 2014-10-08 | 2021-11-09 | Panasonic Intellectual Property Management Co., Ltd. | Imaging device |
US11552115B2 (en) | 2016-01-29 | 2023-01-10 | Panasonic Intellectual Property Management Co., Ltd. | Imaging device including photoelectric converters and capacitive element |
US11637976B2 (en) | 2016-01-22 | 2023-04-25 | Panasonic Intellectual Property Management Co., Ltd. | Imaging device |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102086371B1 (ko) * | 2013-01-03 | 2020-03-09 | 삼성전자주식회사 | 엑스선 영상 장치 및 엑스선 영상 생성 방법 |
CN103365326B (zh) * | 2013-06-21 | 2015-08-05 | 天津大学 | 为像素阵列提供参考电压的均值电压产生电路及方法 |
DE112015006903T5 (de) * | 2015-09-14 | 2018-05-24 | Halliburton Energy Services, Inc. | Dunkelstromkorrektur in Szintillatordetektoren für nukleare Anwendungen in einem Bohrloch |
US10677942B2 (en) * | 2016-02-01 | 2020-06-09 | Shenzhen Xpectvision Technology Co., Ltd. | X-ray detectors capable of managing charge sharing |
CN109870233B (zh) * | 2017-12-05 | 2020-11-03 | 上海耕岩智能科技有限公司 | 光侦测薄膜、光侦测器件、光侦测装置 |
FR3091116A1 (fr) | 2018-12-19 | 2020-06-26 | Stmicroelectronics (Grenoble 2) Sas | Procédé et architecture de lecture de capteur d’images |
WO2021168732A1 (en) * | 2020-02-27 | 2021-09-02 | Shenzhen Genorivision Technology Co., Ltd. | Radiation detectors with high pixel concentrations |
CN112511770A (zh) * | 2020-04-01 | 2021-03-16 | 神亚科技股份有限公司 | 图像感测装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006086425A (ja) * | 2004-09-17 | 2006-03-30 | Toshiba Corp | 半導体光センサ装置及びこれを組込んだ情報機器 |
JP2007105480A (ja) * | 2005-10-14 | 2007-04-26 | Siemens Ag | フォトダイオードの配列を有する検出器 |
JP2008099073A (ja) * | 2006-10-13 | 2008-04-24 | Sony Corp | 固体撮像装置および撮像装置 |
JP2008193163A (ja) * | 2007-01-31 | 2008-08-21 | Sanyo Electric Co Ltd | 固体撮像装置 |
JP2008546313A (ja) * | 2005-06-01 | 2008-12-18 | イーストマン コダック カンパニー | 選択的ビニング機構を備えたcmosイメージセンサの画素 |
JP2011114680A (ja) * | 2009-11-27 | 2011-06-09 | Nikon Corp | 撮像装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6759641B1 (en) * | 2000-09-27 | 2004-07-06 | Rockwell Scientific Licensing, Llc | Imager with adjustable resolution |
GB0212001D0 (en) * | 2002-05-24 | 2002-07-03 | Koninkl Philips Electronics Nv | X-ray image detector |
JP4358125B2 (ja) * | 2005-02-04 | 2009-11-04 | 富士通マイクロエレクトロニクス株式会社 | クロストークノイズ低減回路を備えた半導体装置 |
US20080007637A1 (en) * | 2006-07-07 | 2008-01-10 | Honeywell International, Inc. | Image sensor that provides compressed data based on junction area |
KR101338353B1 (ko) * | 2007-05-30 | 2013-12-06 | 삼성전자주식회사 | 영상 촬상 장치 및 방법 |
KR20090005843A (ko) * | 2007-07-10 | 2009-01-14 | 삼성전자주식회사 | 촬상 장치 및 촬상 장치의 감도 개선 방법 |
US7745779B2 (en) * | 2008-02-08 | 2010-06-29 | Aptina Imaging Corporation | Color pixel arrays having common color filters for multiple adjacent pixels for use in CMOS imagers |
EP2248170A4 (en) * | 2008-02-25 | 2012-08-29 | Sorin Davidovici | SYSTEM AND METHOD FOR A SENSITIVE PICTURE SENSOR ARRAY WITH HIGH DYNAMIC SCOPE |
-
2010
- 2010-04-26 FR FR1053181A patent/FR2959320B1/fr not_active Expired - Fee Related
-
2011
- 2011-04-26 CN CN201180021418.5A patent/CN103038666B/zh active Active
- 2011-04-26 US US13/643,932 patent/US9476992B2/en active Active
- 2011-04-26 EP EP11719505.7A patent/EP2564239B1/fr active Active
- 2011-04-26 CA CA2797531A patent/CA2797531A1/en active Pending
- 2011-04-26 JP JP2013506635A patent/JP6057217B2/ja active Active
- 2011-04-26 WO PCT/EP2011/056590 patent/WO2011134965A1/fr active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006086425A (ja) * | 2004-09-17 | 2006-03-30 | Toshiba Corp | 半導体光センサ装置及びこれを組込んだ情報機器 |
JP2008546313A (ja) * | 2005-06-01 | 2008-12-18 | イーストマン コダック カンパニー | 選択的ビニング機構を備えたcmosイメージセンサの画素 |
JP2007105480A (ja) * | 2005-10-14 | 2007-04-26 | Siemens Ag | フォトダイオードの配列を有する検出器 |
JP2008099073A (ja) * | 2006-10-13 | 2008-04-24 | Sony Corp | 固体撮像装置および撮像装置 |
JP2008193163A (ja) * | 2007-01-31 | 2008-08-21 | Sanyo Electric Co Ltd | 固体撮像装置 |
JP2011114680A (ja) * | 2009-11-27 | 2011-06-09 | Nikon Corp | 撮像装置 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020109971A (ja) * | 2014-10-08 | 2020-07-16 | パナソニックIpマネジメント株式会社 | 撮像装置およびその駆動方法 |
US11172155B2 (en) | 2014-10-08 | 2021-11-09 | Panasonic Intellectual Property Management Co., Ltd. | Imaging device |
JP2023065500A (ja) * | 2014-10-08 | 2023-05-12 | パナソニックIpマネジメント株式会社 | 撮像装置およびその駆動方法 |
US11895419B2 (en) | 2014-10-08 | 2024-02-06 | Panasonic Intellectual Property Management Co., Ltd. | Imaging device |
JP7555056B2 (ja) | 2014-10-08 | 2024-09-24 | パナソニックIpマネジメント株式会社 | 撮像装置およびその駆動方法 |
US11637976B2 (en) | 2016-01-22 | 2023-04-25 | Panasonic Intellectual Property Management Co., Ltd. | Imaging device |
US12022215B2 (en) | 2016-01-22 | 2024-06-25 | Panasonic Intellectual Property Management Co., Ltd. | Imaging device |
US11552115B2 (en) | 2016-01-29 | 2023-01-10 | Panasonic Intellectual Property Management Co., Ltd. | Imaging device including photoelectric converters and capacitive element |
JP2023078191A (ja) * | 2016-01-29 | 2023-06-06 | パナソニックIpマネジメント株式会社 | 撮像装置 |
JP7496512B2 (ja) | 2016-01-29 | 2024-06-07 | パナソニックIpマネジメント株式会社 | 撮像装置 |
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Publication number | Publication date |
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US20130043399A1 (en) | 2013-02-21 |
CN103038666B (zh) | 2016-05-04 |
CN103038666A (zh) | 2013-04-10 |
FR2959320B1 (fr) | 2013-01-04 |
JP6057217B2 (ja) | 2017-01-11 |
US9476992B2 (en) | 2016-10-25 |
WO2011134965A1 (fr) | 2011-11-03 |
FR2959320A1 (fr) | 2011-10-28 |
CA2797531A1 (en) | 2011-11-03 |
EP2564239A1 (fr) | 2013-03-06 |
EP2564239B1 (fr) | 2014-01-08 |
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