JP2013527610A5 - - Google Patents

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Publication number
JP2013527610A5
JP2013527610A5 JP2013508441A JP2013508441A JP2013527610A5 JP 2013527610 A5 JP2013527610 A5 JP 2013527610A5 JP 2013508441 A JP2013508441 A JP 2013508441A JP 2013508441 A JP2013508441 A JP 2013508441A JP 2013527610 A5 JP2013527610 A5 JP 2013527610A5
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JP
Japan
Prior art keywords
exhaust
gas
plasma reactor
vacuum vessel
exhaust hole
Prior art date
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Application number
JP2013508441A
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English (en)
Japanese (ja)
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JP2013527610A (ja
JP5927619B2 (ja
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Priority claimed from PCT/EP2011/056820 external-priority patent/WO2011138239A1/en
Publication of JP2013527610A publication Critical patent/JP2013527610A/ja
Publication of JP2013527610A5 publication Critical patent/JP2013527610A5/ja
Application granted granted Critical
Publication of JP5927619B2 publication Critical patent/JP5927619B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013508441A 2010-05-06 2011-04-29 プラズマリアクタ Expired - Fee Related JP5927619B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US33188710P 2010-05-06 2010-05-06
US61/331,887 2010-05-06
PCT/EP2011/056820 WO2011138239A1 (en) 2010-05-06 2011-04-29 Plasma reactor

Publications (3)

Publication Number Publication Date
JP2013527610A JP2013527610A (ja) 2013-06-27
JP2013527610A5 true JP2013527610A5 (https=) 2014-06-05
JP5927619B2 JP5927619B2 (ja) 2016-06-01

Family

ID=44148910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013508441A Expired - Fee Related JP5927619B2 (ja) 2010-05-06 2011-04-29 プラズマリアクタ

Country Status (5)

Country Link
US (1) US20130052369A1 (https=)
EP (1) EP2567392A1 (https=)
JP (1) JP5927619B2 (https=)
CN (2) CN202246850U (https=)
WO (1) WO2011138239A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103137521A (zh) * 2011-12-02 2013-06-05 中国科学院微电子研究所 一种进气装置
TWI480417B (zh) * 2012-11-02 2015-04-11 Ind Tech Res Inst 具氣幕之氣體噴灑裝置及其薄膜沉積裝置
US20150087108A1 (en) * 2013-09-26 2015-03-26 Tel Solar Ag Process, Film, and Apparatus for Top Cell for a PV Device
US9859088B2 (en) * 2015-04-30 2018-01-02 Lam Research Corporation Inter-electrode gap variation methods for compensating deposition non-uniformity
KR20180074671A (ko) * 2015-08-31 2018-07-03 쥐-레이 스위츨란드 에스에이 모놀리식 cmos 통합된 픽셀 검출기가 구비된 광자 계측용 콘빔 ct 장치
CN114093739B (zh) * 2020-08-24 2024-03-12 中微半导体设备(上海)股份有限公司 一种气体流量调节装置和调节方法及等离子体处理装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2589168B1 (fr) 1985-10-25 1992-07-17 Solems Sa Appareil et son procede d'utilisation pour la formation de films minces assistee par plasma
US4913790A (en) * 1988-03-25 1990-04-03 Tokyo Electron Limited Treating method
JPH0776781A (ja) * 1993-09-10 1995-03-20 Matsushita Electric Ind Co Ltd プラズマ気相成長装置
US6228438B1 (en) 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates
US6502530B1 (en) 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
US6433484B1 (en) * 2000-08-11 2002-08-13 Lam Research Corporation Wafer area pressure control
KR101033123B1 (ko) * 2004-06-30 2011-05-11 엘지디스플레이 주식회사 액정표시장치의 제조를 위한 챔버형 장치
JP5027667B2 (ja) 2004-11-24 2012-09-19 エリコン・ソーラー・アクチェンゲゼルシャフト，トリュープバッハ 超大面積基板用真空処理チャンバ
JP2006303309A (ja) * 2005-04-22 2006-11-02 Hitachi High-Technologies Corp プラズマ処理装置
US8043430B2 (en) * 2006-12-20 2011-10-25 Lam Research Corporation Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber
US8522715B2 (en) * 2008-01-08 2013-09-03 Lam Research Corporation Methods and apparatus for a wide conductance kit
KR101204614B1 (ko) * 2008-02-20 2012-11-23 도쿄엘렉트론가부시키가이샤 가스 공급 장치, 성막 장치, 및 성막 방법
US20090286397A1 (en) * 2008-05-15 2009-11-19 Lam Research Corporation Selective inductive double patterning
CN101798086B (zh) * 2009-01-20 2013-07-24 三菱综合材料株式会社 三氯硅烷制造装置以及三氯硅烷制造方法

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