JP2013524483A - セルアセンブリを備えた光電池モジュールの製造 - Google Patents
セルアセンブリを備えた光電池モジュールの製造 Download PDFInfo
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Abstract
Description
− 例えばモリブデンである、基板(多くの場合ガラス、または金属箔の形態である)にマッチングさせるためのマッチング層、
− 光起電力特性を有する実際の能動層(例えば、銅−(インジウム、ガリウムおよび/もしくはアルミニウム)−(硫黄および/もしくはセレン)などのI−III−VI2化合物、またはテルル化カドミウムもしくはアモルファスシリコンを含有する化合物)、
− および、多くの場合、硫化カドミウム、酸化亜鉛、等の追加の層(光起電力特性を有する下にある層と光が相互作用することを可能にするために透明である)、
などの多くの層を有するフォトダイオードに対応する。
− 光起電力効果によって発生される電子を集めるためにセルの光起電力膜の上面に形成された堆積物(線の形に図1では線で表され、例えば、スクリーン印刷される)、および
− 能動部PV1によって発生される「電気」を広く集めるためにこれらの堆積物SCGに接続された主コレクタCG
を有する。
a)各々がセル用であり、金属基板の前面上に配置された光起電力膜を得るステップと、
b)光起電力膜の各前面上に少なくとも1つの導電性膜(コレクタグリッドなどの、例えばコレクタ層)を形成するステップと、
c)セルを互いに絶縁するために基板を切断するステップと、
d)共通支持部上にセルを封止するステップと、を含む。
− ステップb)において、導電性膜のある領域は、導電性膜が光起電力膜の前面および基板の前面の両方と同時に接触するように基板の上方に延び、
したがって、セルの光起電力膜は、このステップb)で金属基板によってこれらの間が短絡され、
− ステップc)において、基板が、少なくとも導電性膜の上記の領域の下、かつ領域の幅よりも狭い基板幅にわたって、光起電力膜間の短絡を回避するために切断される。
− 第2の領域(Z2)が、基板(SUB)の前面を覆い、かつ基板と接触し、
− 基板(SUB)が、「空いた」スペース(D)を有するように切断され、以降、第1の領域(Z1)の下方の「切断部(D)」と呼ぶ。
− 光起電力膜(PV)に隣接し、かつ光起電力膜の厚さよりも厚く、
− 基板の切断部(D)の上方で、かつ導電性膜の延びた領域(Z1)の一部の下に位置することを意図した、
絶縁膜(IS)がある。
− 絶縁膜が、ステップa)とステップb)との間で少なくとも基板の前面に形成され、
− 基板が、ステップc)において絶縁膜の下方で切断される。
− ステップb)の前に、基板の前面が、ステップc)による基板内の切断部のテンプレートを形成するために、基板の全体の厚さ未満をエッチングされ、
− エッチング操作の後、絶縁膜が、エッチングの位置で基板の前面上に形成され、
− 封止ステップの後、基板を切断するステップが、基板の全体の厚さにわたり完了する。
− ステップb)の前に、基板が、前述の第1の領域に対応する基板のある領域内で、第1の領域よりも実質的に長い局所的な部分のみが切断され、
− 封止ステップの後、基板を切断するステップが、前記第1の領域を超えて終了する。
− パネルの各セルの動作を機能的に試験するステップと、
− 試験したセルが不良である場合に、不良セルを形成するために、ステップc)で作製した基板内の切断部を導電性材料で埋めることによって不良セルにおける動作を短絡するステップと、
をさらに有してもよい。
− 前記第2の領域が、基板の前面を覆い、第2の領域が基板と接触し、
− 基板が、少なくとも前記第1の領域の下方で切断される。
− 光起電力膜PV、および
− 以下に説明するように、2つのセルC1およびC2を相互接続することが可能な、少なくとも1つの導電性膜CND、
を備える。
− 第1の領域Z1、続いて
− 第2の領域Z2、
の上方に延び、第2の領域Z2は、第1の領域Z1よりも光起電力膜PVから遠くにある。実際に、図3を参照すると分かるように、導電性膜CNDは、光起電力膜PV上への入射光を妨害しないように、光起電力膜PVを部分的に覆うにすぎない。
− 導電性膜CND、
− セルC1の第1の領域Z1、
− セルC1の第2の領域Z2、
− 金属基板SUBの一部、
を介してセルC2の膜PVの背面へと流れる。
− 基板SUB内の切断部を、セルC1の光起電力膜PVとセルC2の光起電力膜PVとの間の絶縁機能を有するようにここでは考えることができ、
− 一方で、第2の領域Z2への導電性膜CNDの延長部が、2つの光起電力膜PV間の接続機能を有する。
− 光起電力膜PVの前面の一部まで、
− 絶縁膜ISまで、および
− 絶縁膜ISに隣接する基板SUBの前面の一部まで、
次に連続的に形成する。
− 第1に、例えば、EVA(エチレンビニルアセテート)またはPVB(ポリビニルブチラール)などのポリマーなどの封止材料にボンディングした、例えば、ガラスプレートVE(または任意の他の透明保護材料製)を設けることによって堆積物を保護するため、
− 第2に、図4bを参照してここで説明するように、基板を切断するステップを実施するときに、1つのブロックとしてアセンブリを機械的に保持するためである。
− セルを規則正しく個々に切断すること、
− 共通支持部上にすべてのセルをしっかりと固定すること、
− 各セルに対するコンタクトの作製、
− それから最後に、セルの相互配線、
を可能にすることを必要とせずに、その支持部上に堆積したすべての光電池セルを、基板SUBによって実施される同じ支持部上に都合よく維持することを可能にする。
− 前面の封止に先立って、各セルの動作の機能試験を実行し、
− 試験したセルが不良である場合には、導電性材料CONDを用いて不良セルCの下方の空いたスペースDを埋めることによって、短絡操作を不良セルに実行する。
Claims (13)
- 光電池セルのパネルを製造するための方法であって、
a)各々がセル用であり、金属基板(SUB)の前面上に配置された光起電力膜(PV)を得るステップと、
b)光起電力膜(PV)の各前面上に少なくとも1つの導電性膜(CG、CND)を形成するステップと、
c)セルを互いに絶縁するために前記基板(SUB)を切断するステップと、
d)共通支持部上に前記セルを封止する(ENC)ステップと
を含み、
前記ステップd)およびステップc)は、ステップd)が、ステップc)において前記基板がその背面を切断されることに先立って前記基板の前記前面を封止するように、逆にされ、
− ステップb)において、前記導電性膜のある領域は、前記導電性膜が前記光起電力膜の前記前面および前記基板の前記前面の両方と同時に接触するように前記基板の上方に延び、
− ステップc)において、前記基板が、少なくとも前記導電性膜の前記領域の下、かつ前記領域の幅よりも狭い基板幅にわたって、前記光起電力膜間の短絡を回避するために切断され、
前記導電性膜の前記領域が前記基板と結合し、よって、前記光起電力膜の前記前面は隣接するセルの光起電力膜の背面に電気的に接続される、
方法。 - 前記導電性膜が、前記光起電力膜(PV)から発せられる電荷用であり、前記光起電力膜(PV)の前記前面に付けられたコレクタグリッド(CG)を含む、請求項1に記載の方法。
- 前記導電性膜が、前記コレクタグリッドに付けられ、前記基板の前記前面と接触するために前記領域(Z1、Z2)を覆う導電性ストリップ(CND)をさらに含む、請求項2に記載の方法。
- 前記導電性膜(CND)が、前記光起電力膜(PV)を少なくとも部分的に覆い、前記光起電力膜(PV)を超えて第1の領域(Z1)および第2の領域(Z2)中へと延び、前記第2の領域(Z2)が前記第1の領域(Z1)よりも前記光起電力膜(PV)からさらに遠く、
− 前記第2の領域(Z2)が、前記基板(SUB)の前記前面を覆い、前記基板(SUB)と接触し、
− 前記基板(SUB)が、前記第1の領域(Z1)の下方に空いたスペース(D)を有するように切断される、前記請求項のいずれか1項に記載の方法。 - 絶縁膜(IS)がステップb)に先立って形成され、前記絶縁膜が、
− 前記光起電力膜(PV)に隣接し、前記光起電力膜の厚さよりも厚い厚さであり、
− 前記基板の前記切断部の上方、かつ前記導電性膜の延長した前記領域(Z1)の一部の下に位置するように意図される、前記請求項のいずれか1項に記載の方法。 - 請求項4との組み合わせで、前記絶縁膜(IS)が、前記第1の領域(Z1)の下方に位置し、前記光起電力膜(PV)を前記第2の領域(Z2)から分離することを意図する、請求項5に記載の方法。
- 前記絶縁膜が、前記第2の領域(Z2)と反対側の前記光起電力膜(PV)の一方の端部を覆う、請求項6に記載の方法。
- − 前記絶縁膜(IS)が、ステップa)とステップb)との間で少なくとも前記基板の前記前面に形成され、
− 前記基板が、ステップc)において前記絶縁膜(IS)の下方で切断される、
請求項6または7のいずれかに記載の方法。 - − ステップb)の前に、前記基板(SUB)の前記前面が、ステップc)による前記基板内の前記切断部のテンプレートを形成するために、前記基板の全体の厚さ未満をエッチングされ、
− 前記エッチング操作の後で、前記絶縁膜(IS)が、前記基板(SUB)の前記前表上に形成され、
− 前記封止ステップの後で、前記基板を切断するステップが、前記基板の前記全体の厚さにわたって完了する、
請求項6または7のいずれかに記載の方法。 - − ステップb)の前に、前記基板が、前記第1の領域(Z1)に対応する前記基板の一領域内で局所的に、かつ前記第1の領域(Z1)よりも実質的に長く切断され、
− 前記封止ステップの後で、前記基板を切断するステップが、前記第1の領域(Z1)を超えて終了する、
請求項6または7のいずれかに記載の方法。 - − 前記パネルの各セルの動作を機能的に試験するステップと、
− 試験したセルが不良である場合に、前記不良セルを形成するために、ステップc)において作った前記基板内の前記切断部(D)を導電性材料で埋めることによって前記不良セルにおける動作を短絡するステップと
をさらに含むことを特徴とする、前記請求項のいずれか1項に記載の方法。 - 前記請求項のいずれか1項に記載の方法を実施することによって形成した光電池セルのパネルであって、前記導電性膜が、前記光起電力膜(PV)から発せられる電荷を集めるために、前記光起電力膜(PV)の前記前面に形成されたコレクタ層(CG)を備え、
前記コレクタ層(CG)が、前記光起電力膜(PV)を少なくとも部分的に覆い、前記光起電力膜(PV)を超えて前記第1の領域(Z1)および前記第2の領域(Z2)の上方に延伸し、前記第2の領域(Z2)が前記第1の領域(Z1)よりも前記光起電力膜(PV)からさらに遠く、
− 前記第2の領域(Z2)が、前記基板(SUB)の前記前面を覆い、前記第2の領域(Z2)が前記基板(SUB)と接触し、
− 前記基板(SUB)が、少なくとも前記第1の領域(Z1)の下方で切断される(D)、
パネル。 - 前記基板(SUB)内の前記切断部が、セル間の相互配線用の所定の配線図に対応する選択したパターンに従い、セルを囲む切断パターンが、直列構成に前記セルを設置することに対応する、請求項12に記載のパネル。
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Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5486288A (en) * | 1977-12-21 | 1979-07-09 | Sharp Corp | Manufacture of semiconductor |
US4612408A (en) * | 1984-10-22 | 1986-09-16 | Sera Solar Corporation | Electrically isolated semiconductor integrated photodiode circuits and method |
JPS61234082A (ja) * | 1985-01-30 | 1986-10-18 | エナージー・コンバーション・デバイセス・インコーポレーテッド | 太陽電池のアレイを製造する方法 |
JPS62219674A (ja) * | 1986-02-17 | 1987-09-26 | トータル・エネルギー・デイベロツプメント・ウント・メツセルシユミツト―ベルコウ―ブローム・ゲゼルシヤフト・ミト・ベシユレンクテル・ハフツング・ウント・コンパニー・フオートトロニクス・オーハーゲー | 並列に接合された薄層−太陽電池の集積された複合太陽電池を造るための方法 |
JPH06291344A (ja) * | 1993-03-31 | 1994-10-18 | Asahi Chem Ind Co Ltd | 光電変換素子集合体 |
US5391236A (en) * | 1993-07-30 | 1995-02-21 | Spectrolab, Inc. | Photovoltaic microarray structure and fabrication method |
JPH09162431A (ja) * | 1995-12-13 | 1997-06-20 | Kanegafuchi Chem Ind Co Ltd | 並列型集積化太陽電池 |
JPH11126914A (ja) * | 1997-10-22 | 1999-05-11 | Mitsubishi Heavy Ind Ltd | 集積化太陽電池の製造方法 |
US20040069340A1 (en) * | 1999-03-30 | 2004-04-15 | Daniel Luch | Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
JP2006185979A (ja) * | 2004-12-27 | 2006-07-13 | Matsushita Electric Ind Co Ltd | 薄膜太陽電池モジュールおよびその製造方法 |
WO2010001729A1 (ja) * | 2008-06-30 | 2010-01-07 | シャープ株式会社 | 太陽光発電装置の補修方法と太陽光発電装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4754544A (en) * | 1985-01-30 | 1988-07-05 | Energy Conversion Devices, Inc. | Extremely lightweight, flexible semiconductor device arrays |
US5735966A (en) * | 1995-05-15 | 1998-04-07 | Luch; Daniel | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US20080314433A1 (en) * | 1995-05-15 | 2008-12-25 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US7732243B2 (en) * | 1995-05-15 | 2010-06-08 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US5547516A (en) * | 1995-05-15 | 1996-08-20 | Luch; Daniel | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US6239352B1 (en) * | 1999-03-30 | 2001-05-29 | Daniel Luch | Substrate and collector grid structures for electrically interconnecting photovoltaic arrays and process of manufacture of such arrays |
US7898054B2 (en) * | 2000-02-04 | 2011-03-01 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US20090145472A1 (en) * | 2007-12-10 | 2009-06-11 | Terra Solar Global, Inc. | Photovoltaic devices having conductive paths formed through the active photo absorber |
US20090229596A1 (en) * | 2008-03-12 | 2009-09-17 | Myung-Hun Shin | Solar energy module having repair line, solar energy assembly having the same, method of repairing the solar energy module and method of trimming the solar energy assembly |
-
2010
- 2010-03-26 FR FR1052225A patent/FR2958082B1/fr active Active
-
2011
- 2011-03-24 WO PCT/FR2011/050632 patent/WO2011117548A1/fr active Application Filing
- 2011-03-24 KR KR1020127027749A patent/KR20130012131A/ko not_active Application Discontinuation
- 2011-03-24 CN CN201180026376.4A patent/CN102971850B/zh active Active
- 2011-03-24 EP EP11715987.1A patent/EP2553724B1/fr active Active
- 2011-03-24 US US13/637,057 patent/US20130023068A1/en not_active Abandoned
- 2011-03-24 JP JP2013500568A patent/JP2013524483A/ja active Pending
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5486288A (en) * | 1977-12-21 | 1979-07-09 | Sharp Corp | Manufacture of semiconductor |
US4612408A (en) * | 1984-10-22 | 1986-09-16 | Sera Solar Corporation | Electrically isolated semiconductor integrated photodiode circuits and method |
JPS61234082A (ja) * | 1985-01-30 | 1986-10-18 | エナージー・コンバーション・デバイセス・インコーポレーテッド | 太陽電池のアレイを製造する方法 |
JPS62219674A (ja) * | 1986-02-17 | 1987-09-26 | トータル・エネルギー・デイベロツプメント・ウント・メツセルシユミツト―ベルコウ―ブローム・ゲゼルシヤフト・ミト・ベシユレンクテル・ハフツング・ウント・コンパニー・フオートトロニクス・オーハーゲー | 並列に接合された薄層−太陽電池の集積された複合太陽電池を造るための方法 |
JPH06291344A (ja) * | 1993-03-31 | 1994-10-18 | Asahi Chem Ind Co Ltd | 光電変換素子集合体 |
US5391236A (en) * | 1993-07-30 | 1995-02-21 | Spectrolab, Inc. | Photovoltaic microarray structure and fabrication method |
JPH09162431A (ja) * | 1995-12-13 | 1997-06-20 | Kanegafuchi Chem Ind Co Ltd | 並列型集積化太陽電池 |
JPH11126914A (ja) * | 1997-10-22 | 1999-05-11 | Mitsubishi Heavy Ind Ltd | 集積化太陽電池の製造方法 |
US20040069340A1 (en) * | 1999-03-30 | 2004-04-15 | Daniel Luch | Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
JP2006185979A (ja) * | 2004-12-27 | 2006-07-13 | Matsushita Electric Ind Co Ltd | 薄膜太陽電池モジュールおよびその製造方法 |
WO2010001729A1 (ja) * | 2008-06-30 | 2010-01-07 | シャープ株式会社 | 太陽光発電装置の補修方法と太陽光発電装置 |
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