JP2013515364A5 - - Google Patents
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- Publication number
- JP2013515364A5 JP2013515364A5 JP2012545217A JP2012545217A JP2013515364A5 JP 2013515364 A5 JP2013515364 A5 JP 2013515364A5 JP 2012545217 A JP2012545217 A JP 2012545217A JP 2012545217 A JP2012545217 A JP 2012545217A JP 2013515364 A5 JP2013515364 A5 JP 2013515364A5
- Authority
- JP
- Japan
- Prior art keywords
- radiation
- layer
- emitting semiconductor
- component according
- semiconductor component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010410 layer Substances 0.000 claims 18
- 239000004065 semiconductor Substances 0.000 claims 13
- 239000002346 layers by function Substances 0.000 claims 10
- 230000005855 radiation Effects 0.000 claims 9
- 238000006243 chemical reaction Methods 0.000 claims 7
- 238000004020 luminiscence type Methods 0.000 claims 7
- 230000000737 periodic effect Effects 0.000 claims 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- 239000011521 glass Substances 0.000 claims 3
- 239000002245 particle Substances 0.000 claims 3
- 239000000919 ceramic Substances 0.000 claims 2
- 239000011148 porous material Substances 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 claims 1
- 230000007423 decrease Effects 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 claims 1
- 230000005670 electromagnetic radiation Effects 0.000 claims 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims 1
- 239000002241 glass-ceramic Substances 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000005368 silicate glass Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000005361 soda-lime glass Substances 0.000 claims 1
- 229910052596 spinel Inorganic materials 0.000 claims 1
- 239000011029 spinel Substances 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009059878.2 | 2009-12-21 | ||
| DE102009059878 | 2009-12-21 | ||
| DE102010005169.1 | 2010-01-20 | ||
| DE102010005169A DE102010005169A1 (de) | 2009-12-21 | 2010-01-20 | Strahlungsemittierendes Halbleiterbauelement |
| PCT/EP2010/069509 WO2011085889A1 (de) | 2009-12-21 | 2010-12-13 | Strahlungsemittierendes halbleiterbauelement |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013515364A JP2013515364A (ja) | 2013-05-02 |
| JP2013515364A5 true JP2013515364A5 (OSRAM) | 2014-01-23 |
Family
ID=43589405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012545217A Withdrawn JP2013515364A (ja) | 2009-12-21 | 2010-12-13 | 放射放出半導体部品 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9842972B2 (OSRAM) |
| EP (1) | EP2517270B1 (OSRAM) |
| JP (1) | JP2013515364A (OSRAM) |
| KR (1) | KR20120091460A (OSRAM) |
| CN (1) | CN102656713A (OSRAM) |
| DE (1) | DE102010005169A1 (OSRAM) |
| WO (1) | WO2011085889A1 (OSRAM) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102011113777A1 (de) * | 2011-09-19 | 2013-03-21 | Osram Opto Semiconductors Gmbh | Wellenlängenkonversionselement und Licht emittierendes Halbleiterbauelement mit Wellenlängenkonversionselement |
| DE102011114641B4 (de) | 2011-09-30 | 2021-08-12 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
| DE102011116230B4 (de) | 2011-10-17 | 2018-10-25 | Osram Opto Semiconductors Gmbh | Keramisches Konversionselement, optoelektronisches Halbleiterbauelement mit einem keramischen Konversionselement und Verfahren zur Herstellung eines keramischen Konversionselements |
| DE102012206970A1 (de) * | 2012-04-26 | 2013-10-31 | Osram Gmbh | Optische vorrichtung und beleuchtungseinrichtung |
| DE102012216552A1 (de) * | 2012-09-17 | 2014-03-20 | Osram Gmbh | Herstellen einer LED-Leuchtvorrichtung mit Konverterschicht |
| EP2940743A4 (en) * | 2012-12-28 | 2016-07-27 | Konica Minolta Inc | LIGHT-EMITTING DEVICE |
| WO2014111822A1 (en) * | 2013-01-16 | 2014-07-24 | Koninklijke Philips N.V. | Led using luminescent sapphire as down-converter |
| DE202013101400U1 (de) * | 2013-04-02 | 2014-07-03 | Zumtobel Lighting Gmbh | Anordnung zum Konvertieren des von einer LED-Lichtquelle emittierten Lichts |
| TWI581462B (zh) * | 2013-06-03 | 2017-05-01 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
| CN110010735B (zh) * | 2013-06-07 | 2022-05-17 | 晶元光电股份有限公司 | 发光元件及其制造方法 |
| CN105493301A (zh) * | 2013-07-08 | 2016-04-13 | 皇家飞利浦有限公司 | 波长转换的半导体发光器件 |
| EP3048461B1 (en) * | 2013-09-16 | 2023-07-19 | LG Chem, Ltd. | Method of manufacturing a light-scattering sheet |
| US20150144975A1 (en) * | 2013-11-25 | 2015-05-28 | Epistar Corporation | Light-emitting device |
| DE102014116205B4 (de) * | 2014-11-06 | 2022-09-01 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung einer Leuchtdiode und Leuchtdiode |
| JP6609917B2 (ja) * | 2014-12-02 | 2019-11-27 | ウシオ電機株式会社 | 蛍光光源用発光素子の製造方法 |
| DE102015208462A1 (de) * | 2015-05-07 | 2016-11-10 | Osram Gmbh | Beleuchtungsvorrichtung |
| DE102015116595A1 (de) | 2015-09-30 | 2017-03-30 | Osram Opto Semiconductors Gmbh | Bauelement mit einem Licht emittierenden Halbleiterchip |
| DE102016114474A1 (de) * | 2016-08-04 | 2018-02-08 | Osram Opto Semiconductors Gmbh | Bauteil mit einem lichtemittierenden Bauelement |
| DE102017101729A1 (de) * | 2017-01-30 | 2018-08-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierende Vorrichtung |
| US10686158B2 (en) | 2017-03-31 | 2020-06-16 | Innolux Corporation | Display device |
| US10073294B1 (en) * | 2017-03-31 | 2018-09-11 | Innolux Corporation | Display device |
| EP3382754B1 (en) * | 2017-03-31 | 2021-06-30 | InnoLux Corporation | Display device |
| JP2018186171A (ja) * | 2017-04-25 | 2018-11-22 | 株式会社ディスコ | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
| JP2018186170A (ja) * | 2017-04-25 | 2018-11-22 | 株式会社ディスコ | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
| DE102019100624A1 (de) * | 2019-01-11 | 2020-07-16 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauelement mit erster und zweiter dielektrischer schicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements |
| CN114097099A (zh) * | 2019-01-29 | 2022-02-25 | 奥斯兰姆奥普托半导体股份有限两合公司 | 微型发光二极管、微型发光二极管装置、显示器及其方法 |
| WO2023077502A1 (zh) * | 2021-11-08 | 2023-05-11 | 重庆康佳光电技术研究院有限公司 | 发光二极管芯片及其制备方法、显示装置 |
| FR3160912A1 (fr) * | 2024-04-03 | 2025-10-10 | Universite D'aix Marseille | Procédé de soudure laser |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BR9709998B1 (pt) | 1996-06-26 | 2010-04-20 | elemento de construção semicondutor, irradiador de luz, com elemento de conversão de luminescência | |
| US7078735B2 (en) * | 2003-03-27 | 2006-07-18 | Sanyo Electric Co., Ltd. | Light-emitting device and illuminator |
| DE10351397A1 (de) * | 2003-10-31 | 2005-06-16 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip |
| US7161188B2 (en) * | 2004-06-28 | 2007-01-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element |
| DE102004052456B4 (de) * | 2004-09-30 | 2007-12-20 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung |
| JP4275718B2 (ja) * | 2006-01-16 | 2009-06-10 | パナソニック株式会社 | 半導体発光装置 |
| DE102006051746A1 (de) * | 2006-09-29 | 2008-04-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit einer Lumineszenzkonversionsschicht |
| US7521862B2 (en) * | 2006-11-20 | 2009-04-21 | Philips Lumileds Lighting Co., Llc | Light emitting device including luminescent ceramic and light-scattering material |
| DE102006061175A1 (de) * | 2006-12-22 | 2008-06-26 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement und Verfahren |
| US20090173958A1 (en) * | 2008-01-04 | 2009-07-09 | Cree, Inc. | Light emitting devices with high efficiency phospor structures |
| DE102008021436A1 (de) * | 2008-04-29 | 2010-05-20 | Schott Ag | Optik-Konverter-System für (W)LEDs |
| DE102008021621A1 (de) * | 2008-04-30 | 2009-11-05 | Osram Opto Semiconductors Gmbh | Strahlung emittierender Dünnfilm-Halbleiterchip |
| DE102008030751A1 (de) | 2008-06-27 | 2009-12-31 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
-
2010
- 2010-01-20 DE DE102010005169A patent/DE102010005169A1/de not_active Withdrawn
- 2010-12-13 KR KR1020127019084A patent/KR20120091460A/ko not_active Withdrawn
- 2010-12-13 WO PCT/EP2010/069509 patent/WO2011085889A1/de not_active Ceased
- 2010-12-13 US US13/516,848 patent/US9842972B2/en active Active
- 2010-12-13 JP JP2012545217A patent/JP2013515364A/ja not_active Withdrawn
- 2010-12-13 EP EP10788084.1A patent/EP2517270B1/de active Active
- 2010-12-13 CN CN2010800588437A patent/CN102656713A/zh active Pending
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