JP2013513487A5 - - Google Patents

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Publication number
JP2013513487A5
JP2013513487A5 JP2012542414A JP2012542414A JP2013513487A5 JP 2013513487 A5 JP2013513487 A5 JP 2013513487A5 JP 2012542414 A JP2012542414 A JP 2012542414A JP 2012542414 A JP2012542414 A JP 2012542414A JP 2013513487 A5 JP2013513487 A5 JP 2013513487A5
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JP
Japan
Prior art keywords
partial
laser
partial beams
support
laser beam
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Application number
JP2012542414A
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English (en)
Japanese (ja)
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JP2013513487A (ja
JP5635123B2 (ja
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Priority claimed from DE102009057566A external-priority patent/DE102009057566A1/de
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Publication of JP2013513487A publication Critical patent/JP2013513487A/ja
Publication of JP2013513487A5 publication Critical patent/JP2013513487A5/ja
Application granted granted Critical
Publication of JP5635123B2 publication Critical patent/JP5635123B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012542414A 2009-12-09 2010-10-21 ビームスプリッタを用いたレーザリフトオフ法のための方法および装置 Expired - Fee Related JP5635123B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009057566A DE102009057566A1 (de) 2009-12-09 2009-12-09 Vorrichtung für ein Laserabhebeverfahren und Laserabhebeverfahren
DE102009057566.9 2009-12-09
PCT/EP2010/065891 WO2011069735A1 (de) 2009-12-09 2010-10-21 Verfahren und vorrichtung für ein laserabhebeverfahren mit einem strahlteiler

Publications (3)

Publication Number Publication Date
JP2013513487A JP2013513487A (ja) 2013-04-22
JP2013513487A5 true JP2013513487A5 (enExample) 2013-08-15
JP5635123B2 JP5635123B2 (ja) 2014-12-03

Family

ID=43416867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012542414A Expired - Fee Related JP5635123B2 (ja) 2009-12-09 2010-10-21 ビームスプリッタを用いたレーザリフトオフ法のための方法および装置

Country Status (8)

Country Link
US (1) US8946098B2 (enExample)
EP (1) EP2509741B9 (enExample)
JP (1) JP5635123B2 (enExample)
KR (1) KR20120101707A (enExample)
CN (1) CN102639281B (enExample)
DE (1) DE102009057566A1 (enExample)
TW (1) TW201143952A (enExample)
WO (1) WO2011069735A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010030358B4 (de) 2010-06-22 2014-05-22 Osram Opto Semiconductors Gmbh Verfahren zum Abtrennen einer Substratscheibe
US20140251533A1 (en) 2013-03-11 2014-09-11 Samsung Display Co., Ltd. Substrate peeling device, method for peeling substrate, and method for fabricating flexible display device
GB2519088B (en) * 2013-10-08 2015-09-16 M Solv Ltd Laser scanning system for laser release
KR101834282B1 (ko) 2014-02-26 2018-03-06 엔라이트 인크. 사각 펄스 레이저 리프트 오프
CN104158067B (zh) * 2014-08-22 2016-06-22 苏州大学 一种导线外皮的激光剥离方法
KR20160049382A (ko) * 2014-10-27 2016-05-09 삼성디스플레이 주식회사 레이저 박리 장치 및 표시 장치의 제조 방법
CN104297926A (zh) * 2014-11-12 2015-01-21 核工业理化工程研究院 高功率激光分光光纤装置
GB201509766D0 (en) * 2015-06-05 2015-07-22 Element Six Technologies Ltd Method of fabricating diamond-semiconductor composite substrates
DE102016201418A1 (de) 2016-01-29 2017-08-03 Kjellberg-Stiftung Vorrichtung und Verfahren zur thermischen Bearbeitung
DE102018200036B3 (de) * 2018-01-03 2019-01-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Optische Anordnung zur direkten Laserinterferenzstrukturierung
CN109623155B (zh) * 2018-11-14 2020-07-10 吉林大学 利用多光子激发进行近4π立体角飞秒激光直写加工的方法及应用
WO2020254639A1 (de) * 2019-06-21 2020-12-24 Trumpf Laser- Und Systemtechnik Gmbh Verfahren und vorrichtung zum bearbeiten eines werkstücks mit zusammensetzung des bearbeitungsstrahles aus mindestens zwei strahlprofilen
CN110491811B (zh) * 2019-09-19 2024-06-14 北京大学东莞光电研究院 一种可调节光强型激光剥离装置
DE102022114637A1 (de) 2022-06-10 2023-12-21 Trumpf Laser Gmbh Verfahren und Vorrichtung zum Verarbeiten mindestens eines Teilbereichs eines Schichtsystems
DE102022114646A1 (de) 2022-06-10 2023-12-21 Trumpf Laser Gmbh Verfahren und Vorrichtung zum Verarbeiten mindestens eines Teilbereichs eines Schichtsystems
DE102023201553A1 (de) * 2023-02-22 2024-08-22 3D-Micromac Ag Verfahren und System zur Herstellung mikroelektronischer Komponenten mit Schichtaufbau
GB2637284A (en) * 2023-10-13 2025-07-23 Pulse Investments Uk Ltd Method and system for surface layer removal

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06296597A (ja) 1992-08-19 1994-10-25 D F C:Kk 脳波分析方法及びその装置
US5786560A (en) * 1995-03-31 1998-07-28 Panasonic Technologies, Inc. 3-dimensional micromachining with femtosecond laser pulses
US5798867A (en) * 1997-02-04 1998-08-25 Miyachi Technos Corporation Laser beam-splitting apparatus
US6210479B1 (en) * 1999-02-26 2001-04-03 International Business Machines Corporation Product and process for forming a semiconductor structure on a host substrate
US6169631B1 (en) * 1998-05-19 2001-01-02 Seagate Technology Llc Laser-texturing data zone on a magnetic disk surface by using degenerative two wave mixing
CN2432001Y (zh) * 2000-06-21 2001-05-30 中国科学院光电技术研究所 一种激光干涉光刻系统
TWI226139B (en) 2002-01-31 2005-01-01 Osram Opto Semiconductors Gmbh Method to manufacture a semiconductor-component
CN100530705C (zh) * 2003-01-31 2009-08-19 奥斯兰姆奥普托半导体有限责任公司 用于制造一个半导体元器件的方法
JP4423465B2 (ja) * 2004-02-12 2010-03-03 住友重機械工業株式会社 レーザ加工方法及びレーザ加工装置
EP1716964B1 (en) * 2005-04-28 2009-01-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device and laser irradiation apparatus
US7829909B2 (en) * 2005-11-15 2010-11-09 Verticle, Inc. Light emitting diodes and fabrication methods thereof
CN101434005B (zh) * 2008-11-20 2011-05-25 武汉凌云光电科技有限责任公司 多通道非晶硅太阳能板激光刻膜机

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