JP5635123B2 - ビームスプリッタを用いたレーザリフトオフ法のための方法および装置 - Google Patents
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
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Description
R(N)=1/(N+1)
この場合、反射率が最大のビームスプリッタは、レーザビームまたは部分ビームのビーム経路に関して、照射面の最も近くに位置しており、反射率が2番目に高いビームスプリッタは、照射面に2番目に近い、という具合である。
Claims (13)
- 少なくとも1つの層(2)を支持体(3)から分離するレーザリフトオフ法のための装置(100)であって、
レーザビーム(L)を発生させるレーザと、
少なくとも1つのビームスプリッタ(4)が設けられており、
該少なくとも1つのビームスプリッタ(4)によって、前記レーザビーム(L)が少なくとも2つの部分ビーム(P)に分割され、
該少なくとも2つの部分ビーム(P)は照射面(10)において重畳され、
該照射面(10)は、前記支持体(3)の、前記層(2)とは反対側に位置する主面(30)が該照射面(10)に配置されるように設けられており、
該照射面(10)において前記少なくとも2つの部分ビーム(P)が相互に成す角度(α)は少なくとも1.0°である、
レーザリフトオフ法のための装置(100)において、
前記レーザビームは、ナノ秒パルスのパルス化されたレーザビーム(L)であり、該レーザビーム(L)のパルス持続時間は最大で50nsであり、
前記部分ビーム(P)間の光学的な経路長差は、前記パルス持続時間の少なくとも0.025倍であり最大で0.25倍に相応し、
すべての部分ビーム(P)のエネルギー密度全体は、前記照射面(10)においてパルスあたり200mJ/cm2〜850mJ/cm2であり、ただし200mJ/cm2と850mJ/cm2を含むことを特徴とする、
レーザリフトオフ法のための装置(100)。 - すべての部分ビーム(P)は、最大20%の許容範囲で等しい強度を有する、請求項1記載の装置(100)。
- 前記部分ビーム(P)のビーム経路中、それぞれ割り当てられたビームスプリッタ(4)と照射面(10)との間に、放射を伝達するために設けられた光学素子(6)は設けられておらず、前記部分ビームは、割り当てられたビームスプリッタ(4)から照射面(10)に至るまで、集光を行ういかなる部材も通過しない、請求項1または2記載の装置(100)。
- 前記部分ビーム(P)間の角度(α)はそれぞれ7.5°〜50°であり、ただし7.5°と50°を含み、前記部分ビーム(P)と前記照射面(10)の垂線(11)とが成す角度はそれぞれ0°〜50°であり、ただし0°と50°を含み、前記レーザビーム(L)のパルス持続時間は1ns〜15nsであり、ただし1nsと15nsを含む、請求項1から3のいずれか1項記載の装置(100)。
- 前記レーザビーム(L)は、N−1個のビームスプリッタ(4)によりN個の部分ビーム(P)に分割され、N番目のビームスプリッタ(4)の反射率R(N)について、
R(N)=1/(N+1)
が成り立ち、ただしNは3〜8の整数であり、ここでNは3と8も含み、
前記ビームスプリッタ(4)は、前記照射面(10)に向かいビーム経路に沿って反射率が増大していくように配置されている、
請求項1から4のいずれか1項記載の装置(100)。 - 前記パルス持続時間は1ns〜15nsであり、かつ前記部分ビーム(P)間の角度(α)は、ペアごとに7.5°以上50°以下であり、
前記ビームスプリッタ(4a,4b)は、プリズム(12a,12b,12c)により実装されており、該プリズム(12a,12b,12c)は、石英ガラスから成り、薄い空隙を介して互いに分離されていて、前記ビームスプリッタ(4a,4b)は、前記プリズム(12a,12b)の部分反射する境界面であり、
前記プリズム(12a,12c)に光学素子(6)が形成されており、該光学素子(6)を介して、前記部分ビーム(P1,P2,P3)は、前記照射面(10)において等しいビーム横断面を有するようになる、
請求項1から5のいずれか1項記載の装置(100)。 - 前記部分ビーム(P)は前記照射面(10)において、最大15%の許容範囲でそれぞれ等しい横断面と等しい横方向の広がりを有する、請求項1から6のいずれか1項記載の装置(100)。
- 前記部分ビーム(P)と前記レーザビーム(L)は、直径1/e2のガウス曲線状のビームプロフィルを有しており、横方向におけるビーム(L,P)の強度低下に関し最大強度について、2mmと8mmとの間にあり、ただし2mmと8mmを含む、請求項1から7のいずれか1項記載の装置(100)。
- エピタキシャル成長させた半導体積層体(2)を支持体(3)から分離するためのレーザリフトオフ方法であって、
前記支持体(3)上でエピタキシャル成長させた半導体層(2)または半導体積層体(2)を準備するステップと、
1つのレーザビーム(L)を少なくとも2つの部分ビーム(P)に分割するステップと、
前記半導体積層体(2)とは反対側に位置する、支持体(3)の主面(30)が存在する照射面(10)において、前記部分ビーム(P)を重畳させるステップと
を有しており、
前記照射面(10)において前記少なくとも2つの部分ビーム(P)が相互に成す角度(α)は、少なくとも1.0°である、
レーザリフトオフ方法において、
前記レーザビームは、ナノ秒パルスのパルス化されたレーザビーム(L)であり、該レーザビーム(L)のパルス持続時間を最大で50nsとし、
前記部分ビーム(P)間の光学的な経路長差を、前記パルス持続時間の少なくとも0.025倍とし、最大で0.25倍に相応させ、
すべての部分ビーム(P)のエネルギー密度全体を、前記照射面(10)においてパルスあたり200mJ/cm2〜850mJ/cm2とし、ただし200mJ/cm2と850mJ/cm2を含み、
前記半導体積層体(2)とは反対側の支持体(3)の主面(30)の平均粗面度を、0.1μm〜5.0μmとし、ただし0.1μmと5.0μmを含むことを特徴とする、
レーザリフトオフ方法。 - パルスごとのすべての部分ビーム(P)のエネルギー密度全体を、前記半導体積層体(2)の分解ゾーン(20)の材料の崩壊閾値よりも低くする、請求項9記載の方法。
- 前記支持体(3)はサファイアを含むかまたはサファイアから成り、前記半導体積層体(2)はGaN、InGaNおよび/またはAlGaNをベースとする、請求項9または10記載のレーザリフトオフ方法。
- 前記支持体(3)の厚さ(T)は250μm〜1.5mmであり、ただし250μmと1.5mmを含み、前記重畳された部分ビーム(P)の強度変調は、前記半導体積層体(2)に向いた、前記支持体(3)の成長面(35)において、該重畳された部分ビーム(P)のビームプロフィル(8)の局所的な包絡線(7)に対し最大で20%である、請求項9から11のいずれか1項記載のレーザリフトオフ方法。
- 請求項1から8のいずれか1項記載の装置(100)によって実施される、請求項9から12のいずれか1項記載のレーザリフトオフ方法。
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JPH06296597A (ja) | 1992-08-19 | 1994-10-25 | D F C:Kk | 脳波分析方法及びその装置 |
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CN2432001Y (zh) * | 2000-06-21 | 2001-05-30 | 中国科学院光电技术研究所 | 一种激光干涉光刻系统 |
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JP4423465B2 (ja) | 2004-02-12 | 2010-03-03 | 住友重機械工業株式会社 | レーザ加工方法及びレーザ加工装置 |
EP1716964B1 (en) * | 2005-04-28 | 2009-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device and laser irradiation apparatus |
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-
2009
- 2009-12-09 DE DE102009057566A patent/DE102009057566A1/de not_active Withdrawn
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2010
- 2010-10-21 JP JP2012542414A patent/JP5635123B2/ja not_active Expired - Fee Related
- 2010-10-21 CN CN201080055854.XA patent/CN102639281B/zh not_active Expired - Fee Related
- 2010-10-21 KR KR1020127017715A patent/KR20120101707A/ko not_active Application Discontinuation
- 2010-10-21 WO PCT/EP2010/065891 patent/WO2011069735A1/de active Application Filing
- 2010-10-21 US US13/514,373 patent/US8946098B2/en not_active Expired - Fee Related
- 2010-10-21 EP EP10771088.1A patent/EP2509741B9/de not_active Not-in-force
- 2010-11-22 TW TW099140137A patent/TW201143952A/zh unknown
Also Published As
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DE102009057566A1 (de) | 2011-06-16 |
WO2011069735A1 (de) | 2011-06-16 |
KR20120101707A (ko) | 2012-09-14 |
JP2013513487A (ja) | 2013-04-22 |
EP2509741B9 (de) | 2015-02-25 |
EP2509741B1 (de) | 2014-12-03 |
EP2509741A1 (de) | 2012-10-17 |
CN102639281A (zh) | 2012-08-15 |
CN102639281B (zh) | 2015-02-25 |
TW201143952A (en) | 2011-12-16 |
US8946098B2 (en) | 2015-02-03 |
US20120258605A1 (en) | 2012-10-11 |
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