JP2013505560A5 - - Google Patents

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Publication number
JP2013505560A5
JP2013505560A5 JP2012529204A JP2012529204A JP2013505560A5 JP 2013505560 A5 JP2013505560 A5 JP 2013505560A5 JP 2012529204 A JP2012529204 A JP 2012529204A JP 2012529204 A JP2012529204 A JP 2012529204A JP 2013505560 A5 JP2013505560 A5 JP 2013505560A5
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JP
Japan
Prior art keywords
type doped
doped layer
semiconductor laser
layer
waveguide
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JP2012529204A
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English (en)
Japanese (ja)
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JP2013505560A (ja
JP5800815B2 (ja
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Priority claimed from DE102009041934A external-priority patent/DE102009041934A1/de
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Publication of JP2013505560A publication Critical patent/JP2013505560A/ja
Publication of JP2013505560A5 publication Critical patent/JP2013505560A5/ja
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Publication of JP5800815B2 publication Critical patent/JP5800815B2/ja
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JP2012529204A 2009-09-17 2010-09-01 端面発光半導体レーザー Active JP5800815B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009041934A DE102009041934A1 (de) 2009-09-17 2009-09-17 Kantenemittierender Halbleiterlaser
DE102009041934.9 2009-09-17
PCT/EP2010/062812 WO2011032841A2 (de) 2009-09-17 2010-09-01 Kantenemittierender halbleiterlaser

Publications (3)

Publication Number Publication Date
JP2013505560A JP2013505560A (ja) 2013-02-14
JP2013505560A5 true JP2013505560A5 (enExample) 2015-08-13
JP5800815B2 JP5800815B2 (ja) 2015-10-28

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ID=43603423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012529204A Active JP5800815B2 (ja) 2009-09-17 2010-09-01 端面発光半導体レーザー

Country Status (8)

Country Link
US (2) US8737444B2 (enExample)
EP (1) EP2478601B1 (enExample)
JP (1) JP5800815B2 (enExample)
KR (1) KR20120075468A (enExample)
CN (1) CN102498625B (enExample)
DE (1) DE102009041934A1 (enExample)
TW (1) TW201134036A (enExample)
WO (1) WO2011032841A2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009056387B9 (de) * 2009-10-30 2020-05-07 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit einem Phasenstrukturbereich zur Selektion lateraler Lasermoden
JP6123427B2 (ja) 2013-03-29 2017-05-10 三菱電機株式会社 半導体レーザ装置
US9705285B2 (en) * 2014-01-31 2017-07-11 Technische Universität Berlin Device comprising a high brightness broad-area edge-emitting semiconductor laser and method of making the same
CN116581642B (zh) * 2023-07-11 2023-11-07 度亘核芯光电技术(苏州)有限公司 半导体激光器外延结构及其制备方法、半导体激光器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04781A (ja) 1990-04-17 1992-01-06 Mitsubishi Electric Corp 半導体レーザの構造
RO102871B1 (en) * 1990-04-20 1993-08-16 Inst De Fizica Si Tehnologia M High power laser diode
US6167073A (en) 1998-07-23 2000-12-26 Wisconsin Alumni Research Foundation High power laterally antiguided semiconductor light source with reduced transverse optical confinement
JP2001332814A (ja) * 2000-05-25 2001-11-30 Nec Corp 半導体レーザ
EP1453160B1 (en) * 2001-11-05 2008-02-27 Nichia Corporation Semiconductor element
JP2003060301A (ja) 2002-06-17 2003-02-28 Nec Corp 半導体レーザ
US20050201439A1 (en) 2002-09-06 2005-09-15 Mitsubishi Chemical Corporation Semiconductor light emitting device and semiconductor light emitting device module
GB0306279D0 (en) 2003-03-19 2003-04-23 Bookham Technology Plc High power semiconductor laser with large optical superlattice waveguide
JP2005268298A (ja) * 2004-03-16 2005-09-29 Anritsu Corp 半導体レーザ
JP2006135221A (ja) * 2004-11-09 2006-05-25 Mitsubishi Electric Corp 半導体発光素子
KR20070080696A (ko) * 2006-02-08 2007-08-13 삼성전자주식회사 질화물계 반도체 레이저 다이오드
EP2015412B1 (en) * 2007-07-06 2022-03-09 Lumentum Operations LLC Semiconductor laser with narrow beam divergence.
DE102007051315B4 (de) 2007-09-24 2018-04-05 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement
JP5002391B2 (ja) 2007-09-26 2012-08-15 三菱電機株式会社 半導体レーザ装置
JP5003527B2 (ja) * 2008-02-22 2012-08-15 住友電気工業株式会社 Ｉｉｉ族窒化物発光素子、及びｉｉｉ族窒化物系半導体発光素子を作製する方法

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