TW201134036A - Edge emitting semiconductor laser - Google Patents
Edge emitting semiconductor laser Download PDFInfo
- Publication number
- TW201134036A TW201134036A TW099129617A TW99129617A TW201134036A TW 201134036 A TW201134036 A TW 201134036A TW 099129617 A TW099129617 A TW 099129617A TW 99129617 A TW99129617 A TW 99129617A TW 201134036 A TW201134036 A TW 201134036A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- waveguide
- doped layer
- semiconductor laser
- doped
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 74
- 230000005855 radiation Effects 0.000 claims abstract description 26
- 238000005253 cladding Methods 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 12
- 239000002019 doping agent Substances 0.000 claims description 8
- 150000001495 arsenic compounds Chemical class 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 239000000539 dimer Substances 0.000 claims 1
- 238000002329 infrared spectrum Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 241
- 230000000670 limiting effect Effects 0.000 description 15
- 238000009826 distribution Methods 0.000 description 14
- 239000000758 substrate Substances 0.000 description 13
- 230000002829 reductive effect Effects 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000005670 electromagnetic radiation Effects 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000009313 farming Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 125000001072 heteroaryl group Chemical group 0.000 description 1
- -1 immortal Inorganic materials 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
- H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
- H01S2301/166—Single transverse or lateral mode
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Geometry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009041934A DE102009041934A1 (de) | 2009-09-17 | 2009-09-17 | Kantenemittierender Halbleiterlaser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201134036A true TW201134036A (en) | 2011-10-01 |
Family
ID=43603423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099129617A TW201134036A (en) | 2009-09-17 | 2010-09-02 | Edge emitting semiconductor laser |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US8737444B2 (enExample) |
| EP (1) | EP2478601B1 (enExample) |
| JP (1) | JP5800815B2 (enExample) |
| KR (1) | KR20120075468A (enExample) |
| CN (1) | CN102498625B (enExample) |
| DE (1) | DE102009041934A1 (enExample) |
| TW (1) | TW201134036A (enExample) |
| WO (1) | WO2011032841A2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009056387B9 (de) * | 2009-10-30 | 2020-05-07 | Osram Opto Semiconductors Gmbh | Kantenemittierender Halbleiterlaser mit einem Phasenstrukturbereich zur Selektion lateraler Lasermoden |
| JP6123427B2 (ja) | 2013-03-29 | 2017-05-10 | 三菱電機株式会社 | 半導体レーザ装置 |
| US9705285B2 (en) * | 2014-01-31 | 2017-07-11 | Technische Universität Berlin | Device comprising a high brightness broad-area edge-emitting semiconductor laser and method of making the same |
| CN116581642B (zh) * | 2023-07-11 | 2023-11-07 | 度亘核芯光电技术(苏州)有限公司 | 半导体激光器外延结构及其制备方法、半导体激光器 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04781A (ja) | 1990-04-17 | 1992-01-06 | Mitsubishi Electric Corp | 半導体レーザの構造 |
| RO102871B1 (en) * | 1990-04-20 | 1993-08-16 | Inst De Fizica Si Tehnologia M | High power laser diode |
| US6167073A (en) | 1998-07-23 | 2000-12-26 | Wisconsin Alumni Research Foundation | High power laterally antiguided semiconductor light source with reduced transverse optical confinement |
| JP2001332814A (ja) * | 2000-05-25 | 2001-11-30 | Nec Corp | 半導体レーザ |
| EP1453160B1 (en) * | 2001-11-05 | 2008-02-27 | Nichia Corporation | Semiconductor element |
| JP2003060301A (ja) | 2002-06-17 | 2003-02-28 | Nec Corp | 半導体レーザ |
| US20050201439A1 (en) | 2002-09-06 | 2005-09-15 | Mitsubishi Chemical Corporation | Semiconductor light emitting device and semiconductor light emitting device module |
| GB0306279D0 (en) | 2003-03-19 | 2003-04-23 | Bookham Technology Plc | High power semiconductor laser with large optical superlattice waveguide |
| JP2005268298A (ja) * | 2004-03-16 | 2005-09-29 | Anritsu Corp | 半導体レーザ |
| JP2006135221A (ja) * | 2004-11-09 | 2006-05-25 | Mitsubishi Electric Corp | 半導体発光素子 |
| KR20070080696A (ko) * | 2006-02-08 | 2007-08-13 | 삼성전자주식회사 | 질화물계 반도체 레이저 다이오드 |
| EP2015412B1 (en) * | 2007-07-06 | 2022-03-09 | Lumentum Operations LLC | Semiconductor laser with narrow beam divergence. |
| DE102007051315B4 (de) | 2007-09-24 | 2018-04-05 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauelement |
| JP5002391B2 (ja) | 2007-09-26 | 2012-08-15 | 三菱電機株式会社 | 半導体レーザ装置 |
| JP5003527B2 (ja) * | 2008-02-22 | 2012-08-15 | 住友電気工業株式会社 | Ｉｉｉ族窒化物発光素子、及びｉｉｉ族窒化物系半導体発光素子を作製する方法 |
-
2009
- 2009-09-17 DE DE102009041934A patent/DE102009041934A1/de not_active Withdrawn
-
2010
- 2010-09-01 EP EP10748092.3A patent/EP2478601B1/de active Active
- 2010-09-01 KR KR1020127009496A patent/KR20120075468A/ko not_active Ceased
- 2010-09-01 WO PCT/EP2010/062812 patent/WO2011032841A2/de not_active Ceased
- 2010-09-01 US US13/497,036 patent/US8737444B2/en active Active
- 2010-09-01 JP JP2012529204A patent/JP5800815B2/ja active Active
- 2010-09-01 CN CN201080041692.4A patent/CN102498625B/zh active Active
- 2010-09-02 TW TW099129617A patent/TW201134036A/zh unknown
-
2014
- 2014-03-12 US US14/206,676 patent/US8976831B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US8737444B2 (en) | 2014-05-27 |
| US8976831B2 (en) | 2015-03-10 |
| WO2011032841A2 (de) | 2011-03-24 |
| EP2478601B1 (de) | 2017-12-06 |
| JP2013505560A (ja) | 2013-02-14 |
| CN102498625B (zh) | 2014-04-23 |
| US20120263205A1 (en) | 2012-10-18 |
| WO2011032841A3 (de) | 2012-03-08 |
| DE102009041934A1 (de) | 2011-03-24 |
| US20140211821A1 (en) | 2014-07-31 |
| EP2478601A2 (de) | 2012-07-25 |
| KR20120075468A (ko) | 2012-07-06 |
| CN102498625A (zh) | 2012-06-13 |
| JP5800815B2 (ja) | 2015-10-28 |
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