JP2013504197A - 湾曲を制御する層を備えたｉｉｉ族の窒化物の発光デバイス - Google Patents

湾曲を制御する層を備えたｉｉｉ族の窒化物の発光デバイス Download PDF

Info

Publication number
JP2013504197A
JP2013504197A JP2012527410A JP2012527410A JP2013504197A JP 2013504197 A JP2013504197 A JP 2013504197A JP 2012527410 A JP2012527410 A JP 2012527410A JP 2012527410 A JP2012527410 A JP 2012527410A JP 2013504197 A JP2013504197 A JP 2013504197A
Authority
JP
Japan
Prior art keywords
layer
curvature control
control layer
type region
curvature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012527410A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013504197A5 (https=
Inventor
リンダ ティー ロマノ
パリヤト プラミル デブ
アンドリュー ワイ キム
ジョン エフ カエディング
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips NV
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips NV, Koninklijke Philips Electronics NV filed Critical Koninklijke Philips NV
Publication of JP2013504197A publication Critical patent/JP2013504197A/ja
Publication of JP2013504197A5 publication Critical patent/JP2013504197A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
JP2012527410A 2009-09-08 2010-08-04 湾曲を制御する層を備えたｉｉｉ族の窒化物の発光デバイス Pending JP2013504197A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/555,000 US20110057213A1 (en) 2009-09-08 2009-09-08 Iii-nitride light emitting device with curvat1jre control layer
US12/555,000 2009-09-08
PCT/IB2010/053537 WO2011030238A1 (en) 2009-09-08 2010-08-04 Iii-nitride light emitting device with curvature control layer

Publications (2)

Publication Number Publication Date
JP2013504197A true JP2013504197A (ja) 2013-02-04
JP2013504197A5 JP2013504197A5 (https=) 2013-09-26

Family

ID=43128314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012527410A Pending JP2013504197A (ja) 2009-09-08 2010-08-04 湾曲を制御する層を備えたｉｉｉ族の窒化物の発光デバイス

Country Status (7)

Country Link
US (2) US20110057213A1 (https=)
EP (1) EP2476144A1 (https=)
JP (1) JP2013504197A (https=)
KR (1) KR20120068900A (https=)
CN (1) CN102484178A (https=)
TW (1) TW201117418A (https=)
WO (1) WO2011030238A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130082274A1 (en) * 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
JP5166594B1 (ja) 2011-12-12 2013-03-21 株式会社東芝 半導体発光素子
EP2696365B1 (en) * 2012-08-09 2021-06-23 Samsung Electronics Co., Ltd. Method of manufacturing a semiconductor device using a semiconductor buffer structure
CN108281378B (zh) * 2012-10-12 2022-06-24 住友电气工业株式会社 Iii族氮化物复合衬底、半导体器件及它们的制造方法
JP6165884B2 (ja) * 2013-01-31 2017-07-19 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 半導体積層体および半導体積層体の製造方法
CN107408933B (zh) * 2014-10-03 2020-11-20 芬兰国家技术研究中心股份公司 温度补偿复合谐振器
CN108054260A (zh) * 2017-10-25 2018-05-18 华灿光电（浙江）有限公司 一种发光二极管的外延片及制备方法
KR102211486B1 (ko) * 2018-12-24 2021-02-02 한국세라믹기술원 전기화학적 에칭법을 이용한 프리 스탠딩 질화갈륨 기판 제조 방법 및 이를 포함하는 물분해 수소생산용 광전극
US12349528B2 (en) 2021-10-25 2025-07-01 Meta Platforms Technologies, Llc Strain management of III-P micro-LED epitaxy towards higher efficiency and low bow

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10150245A (ja) * 1996-11-21 1998-06-02 Matsushita Electric Ind Co Ltd 窒化ガリウム系半導体の製造方法
JP2002261033A (ja) * 2000-12-20 2002-09-13 Matsushita Electric Ind Co Ltd 半導体の製造方法、半導体基板の製造方法及び半導体発光素子
JP2003023220A (ja) * 2001-07-06 2003-01-24 Toshiba Corp 窒化物半導体素子

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6996150B1 (en) * 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US5670798A (en) * 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
JPH0964477A (ja) * 1995-08-25 1997-03-07 Toshiba Corp 半導体発光素子及びその製造方法
US6194742B1 (en) * 1998-06-05 2001-02-27 Lumileds Lighting, U.S., Llc Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices
KR100568701B1 (ko) * 2002-06-19 2006-04-07 니폰덴신뎅와 가부시키가이샤 반도체 발광 소자
KR100906164B1 (ko) * 2004-11-18 2009-07-03 쇼와 덴코 가부시키가이샤 질화갈륨계 반도체 적층구조체, 그 제조방법, 질화갈륨계반도체 소자 및 그 소자를 사용한 램프
US7795050B2 (en) * 2005-08-12 2010-09-14 Samsung Electronics Co., Ltd. Single-crystal nitride-based semiconductor substrate and method of manufacturing high-quality nitride-based light emitting device by using the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10150245A (ja) * 1996-11-21 1998-06-02 Matsushita Electric Ind Co Ltd 窒化ガリウム系半導体の製造方法
JP2002261033A (ja) * 2000-12-20 2002-09-13 Matsushita Electric Ind Co Ltd 半導体の製造方法、半導体基板の製造方法及び半導体発光素子
JP2003023220A (ja) * 2001-07-06 2003-01-24 Toshiba Corp 窒化物半導体素子

Also Published As

Publication number Publication date
KR20120068900A (ko) 2012-06-27
TW201117418A (en) 2011-05-16
EP2476144A1 (en) 2012-07-18
CN102484178A (zh) 2012-05-30
WO2011030238A1 (en) 2011-03-17
US20120264248A1 (en) 2012-10-18
US20110057213A1 (en) 2011-03-10

Similar Documents

Publication Publication Date Title
US8106403B2 (en) III-nitride light emitting device incorporation boron
US8436362B2 (en) Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods
JP2013504197A (ja) 湾曲を制御する層を備えたｉｉｉ族の窒化物の発光デバイス
CN101849296A (zh) 生长在刃型位错模板上的ⅲ族氮化物器件
US20110177638A1 (en) Semiconductor light emitting device with curvature control layer
KR102147587B1 (ko) 완화 층 상에 성장된 ⅲ-질화물 발광 디바이스
US9012250B2 (en) Controlling pit formation in a III-nitride device
KR20130113337A (ko) 반도체 소자를 성장시키기 위한 복합 성장 기판

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130801

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130801

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140219

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140220

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140519

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20141023