JP2013504159A5 - - Google Patents

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Publication number
JP2013504159A5
JP2013504159A5 JP2012527874A JP2012527874A JP2013504159A5 JP 2013504159 A5 JP2013504159 A5 JP 2013504159A5 JP 2012527874 A JP2012527874 A JP 2012527874A JP 2012527874 A JP2012527874 A JP 2012527874A JP 2013504159 A5 JP2013504159 A5 JP 2013504159A5
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JP
Japan
Prior art keywords
support plate
enclosure
floating support
shoulder ring
yawing
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Application number
JP2012527874A
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English (en)
Japanese (ja)
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JP5705224B2 (ja
JP2013504159A (ja
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Priority claimed from US12/787,198 external-priority patent/US8414736B2/en
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Publication of JP2013504159A publication Critical patent/JP2013504159A/ja
Publication of JP2013504159A5 publication Critical patent/JP2013504159A5/ja
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Publication of JP5705224B2 publication Critical patent/JP5705224B2/ja
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JP2012527874A 2009-09-03 2010-06-11 傾斜可能なオーバーヘッドｒｆ誘導源を備えたプラズマリアクタ Active JP5705224B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US23971109P 2009-09-03 2009-09-03
US61/239,711 2009-09-03
US12/787,198 US8414736B2 (en) 2009-09-03 2010-05-25 Plasma reactor with tiltable overhead RF inductive source
US12/787,198 2010-05-25
PCT/US2010/038286 WO2011028312A1 (en) 2009-09-03 2010-06-11 Plasma reactor with tiltable overhead rf inductive source

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013110459A Division JP5789281B2 (ja) 2009-09-03 2013-05-26 傾斜可能なオーバーヘッドｒｆ誘導源を備えたプラズマリアクタ

Publications (3)

Publication Number Publication Date
JP2013504159A JP2013504159A (ja) 2013-02-04
JP2013504159A5 true JP2013504159A5 (enExample) 2013-07-18
JP5705224B2 JP5705224B2 (ja) 2015-04-22

Family

ID=43623091

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2012527874A Active JP5705224B2 (ja) 2009-09-03 2010-06-11 傾斜可能なオーバーヘッドｒｆ誘導源を備えたプラズマリアクタ
JP2013110459A Active JP5789281B2 (ja) 2009-09-03 2013-05-26 傾斜可能なオーバーヘッドｒｆ誘導源を備えたプラズマリアクタ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013110459A Active JP5789281B2 (ja) 2009-09-03 2013-05-26 傾斜可能なオーバーヘッドｒｆ誘導源を備えたプラズマリアクタ

Country Status (6)

Country Link
US (2) US8414736B2 (enExample)
JP (2) JP5705224B2 (enExample)
KR (2) KR101445156B1 (enExample)
CN (2) CN103426711B (enExample)
TW (2) TWI446440B (enExample)
WO (1) WO2011028312A1 (enExample)

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CN103060778B (zh) * 2013-01-23 2015-03-11 深圳市劲拓自动化设备股份有限公司 平板式pecvd装置
US20140262044A1 (en) * 2013-03-15 2014-09-18 Applied Materials, Inc. Mu metal shield cover
KR102171725B1 (ko) 2013-06-17 2020-10-29 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 반응기를 위한 강화된 플라즈마 소스
US9184021B2 (en) 2013-10-04 2015-11-10 Applied Materials, Inc. Predictive method of matching two plasma reactors
US9305748B2 (en) 2013-10-04 2016-04-05 Applied Materials, Inc. Method of matching two or more plasma reactors
US10249475B2 (en) 2014-04-01 2019-04-02 Applied Materials, Inc. Cooling mechanism utlized in a plasma reactor with enhanced temperature regulation
WO2016149515A1 (en) * 2015-03-19 2016-09-22 Mattson Technology, Inc. Controlling azimuthal uniformity of etch process in plasma processing chamber
JP5977853B1 (ja) * 2015-03-20 2016-08-24 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
JP6424120B2 (ja) * 2015-03-23 2018-11-14 東京エレクトロン株式会社 電源システム、プラズマ処理装置及び電源制御方法
US10032604B2 (en) 2015-09-25 2018-07-24 Applied Materials, Inc. Remote plasma and electron beam generation system for a plasma reactor
US11749509B2 (en) * 2017-02-20 2023-09-05 Beijing E-Town Semiconductor Technology, Co., Ltd Temperature control using temperature control element coupled to faraday shield
US10190216B1 (en) * 2017-07-25 2019-01-29 Lam Research Corporation Showerhead tilt mechanism
KR102309660B1 (ko) * 2019-11-21 2021-10-07 주식회사 유진테크 기판 처리 장치
WO2021262446A1 (en) * 2020-06-23 2021-12-30 Lam Research Corporation Automated showerhead tilt adjustment
US20230411178A1 (en) * 2020-10-29 2023-12-21 Board Of Regents, The University Of Texas System Equipment and process technologies for catalyst influenced chemical etching

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US5280154A (en) * 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
US5433812A (en) * 1993-01-19 1995-07-18 International Business Machines Corporation Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
US5387288A (en) * 1993-05-14 1995-02-07 Modular Process Technology Corp. Apparatus for depositing diamond and refractory materials comprising rotating antenna
US5855681A (en) * 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
US6229264B1 (en) * 1999-03-31 2001-05-08 Lam Research Corporation Plasma processor with coil having variable rf coupling
KR100291898B1 (ko) * 1999-04-09 2001-06-01 윤종용 스파터 오염원을 감소시키고 플라즈마에 유도 결합을 향상시키기위한 차폐판의 제조방법 및 플라즈마 식각장치
US6507155B1 (en) * 2000-04-06 2003-01-14 Applied Materials Inc. Inductively coupled plasma source with controllable power deposition
JP3462865B2 (ja) * 2001-07-10 2003-11-05 三菱重工業株式会社 給電アンテナ及び半導体製造装置
JP3969081B2 (ja) 2001-12-14 2007-08-29 東京エレクトロン株式会社 プラズマ処理装置
JP2003234293A (ja) 2002-02-06 2003-08-22 Canon Inc ヘリコン波プラズマ装置及びヘリコン波プラズマ処理方法
US7223321B1 (en) * 2002-08-30 2007-05-29 Lam Research Corporation Faraday shield disposed within an inductively coupled plasma etching apparatus
JP2004172243A (ja) * 2002-11-19 2004-06-17 Nec Kansai Ltd ドライエッチング装置
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US8999106B2 (en) * 2007-12-19 2015-04-07 Applied Materials, Inc. Apparatus and method for controlling edge performance in an inductively coupled plasma chamber

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