TWI446440B - 具可傾斜頂置ｒｆ感應源之電漿反應器 - Google Patents
具可傾斜頂置ｒｆ感應源之電漿反應器 Download PDFInfo
- Publication number
- TWI446440B TWI446440B TW099119957A TW99119957A TWI446440B TW I446440 B TWI446440 B TW I446440B TW 099119957 A TW099119957 A TW 099119957A TW 99119957 A TW99119957 A TW 99119957A TW I446440 B TWI446440 B TW I446440B
- Authority
- TW
- Taiwan
- Prior art keywords
- support plate
- floating support
- plasma reactor
- housing
- shoulder ring
- Prior art date
Links
- 230000001939 inductive effect Effects 0.000 title 1
- 238000009826 distribution Methods 0.000 claims description 23
- 238000005096 rolling process Methods 0.000 claims description 14
- 230000033001 locomotion Effects 0.000 claims description 8
- 125000006850 spacer group Chemical group 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101710162453 Replication factor A Proteins 0.000 description 1
- 102100035729 Replication protein A 70 kDa DNA-binding subunit Human genes 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23971109P | 2009-09-03 | 2009-09-03 | |
| US12/787,198 US8414736B2 (en) | 2009-09-03 | 2010-05-25 | Plasma reactor with tiltable overhead RF inductive source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201126595A TW201126595A (en) | 2011-08-01 |
| TWI446440B true TWI446440B (zh) | 2014-07-21 |
Family
ID=43623091
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099119957A TWI446440B (zh) | 2009-09-03 | 2010-06-18 | 具可傾斜頂置ｒｆ感應源之電漿反應器 |
| TW102123665A TWI500082B (zh) | 2009-09-03 | 2010-06-18 | 具可傾斜頂置ｒｆ感應源之電漿反應器 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102123665A TWI500082B (zh) | 2009-09-03 | 2010-06-18 | 具可傾斜頂置ｒｆ感應源之電漿反應器 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8414736B2 (enExample) |
| JP (2) | JP5705224B2 (enExample) |
| KR (2) | KR101445156B1 (enExample) |
| CN (2) | CN103426711B (enExample) |
| TW (2) | TWI446440B (enExample) |
| WO (1) | WO2011028312A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI753110B (zh) * | 2017-02-20 | 2022-01-21 | 美商得昇科技股份有限公司 | 利用耦合至法拉第屏蔽之溫度控制元件的溫度控制 |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9016289B2 (en) * | 2011-11-28 | 2015-04-28 | Intermolecular, Inc. | System and method for reducing particles and marks on wafer surface following reactor processing |
| TW201405627A (zh) * | 2012-07-20 | 2014-02-01 | Applied Materials Inc | 具有同軸ｒｆ饋送及同軸遮罩之對稱的感應性耦合電漿源 |
| CN103060778B (zh) * | 2013-01-23 | 2015-03-11 | 深圳市劲拓自动化设备股份有限公司 | 平板式pecvd装置 |
| US20140262044A1 (en) * | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Mu metal shield cover |
| KR102171725B1 (ko) | 2013-06-17 | 2020-10-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마 반응기를 위한 강화된 플라즈마 소스 |
| US9184021B2 (en) | 2013-10-04 | 2015-11-10 | Applied Materials, Inc. | Predictive method of matching two plasma reactors |
| US9305748B2 (en) | 2013-10-04 | 2016-04-05 | Applied Materials, Inc. | Method of matching two or more plasma reactors |
| US10249475B2 (en) | 2014-04-01 | 2019-04-02 | Applied Materials, Inc. | Cooling mechanism utlized in a plasma reactor with enhanced temperature regulation |
| WO2016149515A1 (en) * | 2015-03-19 | 2016-09-22 | Mattson Technology, Inc. | Controlling azimuthal uniformity of etch process in plasma processing chamber |
| JP5977853B1 (ja) * | 2015-03-20 | 2016-08-24 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体 |
| JP6424120B2 (ja) * | 2015-03-23 | 2018-11-14 | 東京エレクトロン株式会社 | 電源システム、プラズマ処理装置及び電源制御方法 |
| US10032604B2 (en) | 2015-09-25 | 2018-07-24 | Applied Materials, Inc. | Remote plasma and electron beam generation system for a plasma reactor |
| US10190216B1 (en) * | 2017-07-25 | 2019-01-29 | Lam Research Corporation | Showerhead tilt mechanism |
| KR102309660B1 (ko) * | 2019-11-21 | 2021-10-07 | 주식회사 유진테크 | 기판 처리 장치 |
| WO2021262446A1 (en) * | 2020-06-23 | 2021-12-30 | Lam Research Corporation | Automated showerhead tilt adjustment |
| US20230411178A1 (en) * | 2020-10-29 | 2023-12-21 | Board Of Regents, The University Of Texas System | Equipment and process technologies for catalyst influenced chemical etching |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5280154A (en) * | 1992-01-30 | 1994-01-18 | International Business Machines Corporation | Radio frequency induction plasma processing system utilizing a uniform field coil |
| US5433812A (en) * | 1993-01-19 | 1995-07-18 | International Business Machines Corporation | Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination |
| US5387288A (en) * | 1993-05-14 | 1995-02-07 | Modular Process Technology Corp. | Apparatus for depositing diamond and refractory materials comprising rotating antenna |
| US5855681A (en) * | 1996-11-18 | 1999-01-05 | Applied Materials, Inc. | Ultra high throughput wafer vacuum processing system |
| US6229264B1 (en) * | 1999-03-31 | 2001-05-08 | Lam Research Corporation | Plasma processor with coil having variable rf coupling |
| KR100291898B1 (ko) * | 1999-04-09 | 2001-06-01 | 윤종용 | 스파터 오염원을 감소시키고 플라즈마에 유도 결합을 향상시키기위한 차폐판의 제조방법 및 플라즈마 식각장치 |
| US6507155B1 (en) * | 2000-04-06 | 2003-01-14 | Applied Materials Inc. | Inductively coupled plasma source with controllable power deposition |
| JP3462865B2 (ja) * | 2001-07-10 | 2003-11-05 | 三菱重工業株式会社 | 給電アンテナ及び半導体製造装置 |
| JP3969081B2 (ja) | 2001-12-14 | 2007-08-29 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP2003234293A (ja) | 2002-02-06 | 2003-08-22 | Canon Inc | ヘリコン波プラズマ装置及びヘリコン波プラズマ処理方法 |
| US7223321B1 (en) * | 2002-08-30 | 2007-05-29 | Lam Research Corporation | Faraday shield disposed within an inductively coupled plasma etching apparatus |
| JP2004172243A (ja) * | 2002-11-19 | 2004-06-17 | Nec Kansai Ltd | ドライエッチング装置 |
| US7713432B2 (en) * | 2004-10-04 | 2010-05-11 | David Johnson | Method and apparatus to improve plasma etch uniformity |
| KR100777151B1 (ko) * | 2006-03-21 | 2007-11-16 | 주식회사 디엠에스 | 하이브리드형 플라즈마 반응장치 |
| US7504041B2 (en) * | 2006-05-03 | 2009-03-17 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator |
| US7431797B2 (en) | 2006-05-03 | 2008-10-07 | Applied Materials, Inc. | Plasma reactor with a dynamically adjustable plasma source power applicator |
| US7829815B2 (en) * | 2006-09-22 | 2010-11-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Adjustable electrodes and coils for plasma density distribution control |
| US8223470B2 (en) * | 2006-10-10 | 2012-07-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method to improve uniformity and reduce local effect of process chamber |
| US7732728B2 (en) * | 2007-01-17 | 2010-06-08 | Lam Research Corporation | Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor |
| US8062472B2 (en) * | 2007-12-19 | 2011-11-22 | Applied Materials, Inc. | Method of correcting baseline skew by a novel motorized source coil assembly |
| US8999106B2 (en) * | 2007-12-19 | 2015-04-07 | Applied Materials, Inc. | Apparatus and method for controlling edge performance in an inductively coupled plasma chamber |
-
2010
- 2010-05-25 US US12/787,198 patent/US8414736B2/en active Active
- 2010-06-11 JP JP2012527874A patent/JP5705224B2/ja active Active
- 2010-06-11 KR KR1020127008338A patent/KR101445156B1/ko active Active
- 2010-06-11 CN CN201310360195.6A patent/CN103426711B/zh active Active
- 2010-06-11 CN CN201080039319.5A patent/CN102576672B/zh active Active
- 2010-06-11 KR KR1020137017437A patent/KR101668587B1/ko active Active
- 2010-06-11 WO PCT/US2010/038286 patent/WO2011028312A1/en not_active Ceased
- 2010-06-18 TW TW099119957A patent/TWI446440B/zh not_active IP Right Cessation
- 2010-06-18 TW TW102123665A patent/TWI500082B/zh active
-
2013
- 2013-03-04 US US13/783,776 patent/US9330887B2/en active Active
- 2013-05-26 JP JP2013110459A patent/JP5789281B2/ja active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI753110B (zh) * | 2017-02-20 | 2022-01-21 | 美商得昇科技股份有限公司 | 利用耦合至法拉第屏蔽之溫度控制元件的溫度控制 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101668587B1 (ko) | 2016-10-24 |
| KR20120073260A (ko) | 2012-07-04 |
| JP5705224B2 (ja) | 2015-04-22 |
| TW201126595A (en) | 2011-08-01 |
| JP5789281B2 (ja) | 2015-10-07 |
| JP2013504159A (ja) | 2013-02-04 |
| US9330887B2 (en) | 2016-05-03 |
| WO2011028312A1 (en) | 2011-03-10 |
| JP2013211580A (ja) | 2013-10-10 |
| CN103426711B (zh) | 2016-04-27 |
| CN102576672A (zh) | 2012-07-11 |
| CN102576672B (zh) | 2015-06-17 |
| US8414736B2 (en) | 2013-04-09 |
| KR20130083489A (ko) | 2013-07-22 |
| TW201342470A (zh) | 2013-10-16 |
| TWI500082B (zh) | 2015-09-11 |
| CN103426711A (zh) | 2013-12-04 |
| US20110048644A1 (en) | 2011-03-03 |
| KR101445156B1 (ko) | 2014-09-29 |
| US20130206594A1 (en) | 2013-08-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI446440B (zh) | 具可傾斜頂置ｒｆ感應源之電漿反應器 | |
| KR101564550B1 (ko) | 동적 조절가능한 플라즈마 소스 전력 공급기를 갖춘 플라즈마 반응기 | |
| US7431797B2 (en) | Plasma reactor with a dynamically adjustable plasma source power applicator | |
| JP5694721B2 (ja) | プラズマ処理装置及びプラズマ処理方法 | |
| US10541117B2 (en) | Systems and methods for tilting a wafer for achieving deposition uniformity | |
| US9812349B2 (en) | Control of the incidence angle of an ion beam on a substrate | |
| US20070257008A1 (en) | Method of processing a workpiece in a plasma reactor with dynamic adjustment of the plasma source power applicator and the workpiece relative to one another | |
| US7419551B2 (en) | Plasma reactor with apparatus for dynamically adjusting the plasma source power applicator and the workpiece relative to one another | |
| US20190078725A1 (en) | Gimbal assembly for heater pedestal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |