JP2013503485A - 銅の選択的かつ清浄なエッチングのための集束イオンビームプロセス - Google Patents
銅の選択的かつ清浄なエッチングのための集束イオンビームプロセス Download PDFInfo
- Publication number
- JP2013503485A JP2013503485A JP2012526903A JP2012526903A JP2013503485A JP 2013503485 A JP2013503485 A JP 2013503485A JP 2012526903 A JP2012526903 A JP 2012526903A JP 2012526903 A JP2012526903 A JP 2012526903A JP 2013503485 A JP2013503485 A JP 2013503485A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- dielectric
- hydrazine
- etch
- ion beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 171
- 239000010949 copper Substances 0.000 title claims abstract description 159
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 158
- 238000005530 etching Methods 0.000 title claims abstract description 62
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims description 55
- 230000008569 process Effects 0.000 title description 26
- 150000001875 compounds Chemical class 0.000 claims abstract description 52
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine hydrate Chemical compound O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 claims abstract description 34
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims abstract description 30
- UMFJAHHVKNCGLG-UHFFFAOYSA-N n-Nitrosodimethylamine Chemical compound CN(C)N=O UMFJAHHVKNCGLG-UHFFFAOYSA-N 0.000 claims abstract description 29
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims abstract description 28
- GBHCABUWWQUMAJ-UHFFFAOYSA-N 2-hydrazinoethanol Chemical compound NNCCO GBHCABUWWQUMAJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- XKLJHFLUAHKGGU-UHFFFAOYSA-N nitrous amide Chemical compound ON=N XKLJHFLUAHKGGU-UHFFFAOYSA-N 0.000 claims abstract description 18
- WBNQDOYYEUMPFS-UHFFFAOYSA-N N-nitrosodiethylamine Chemical compound CCN(CC)N=O WBNQDOYYEUMPFS-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000009835 boiling Methods 0.000 claims abstract description 15
- WNYADZVDBIBLJJ-UHFFFAOYSA-N N-Nitrosopyrrolidine Chemical compound O=NN1CCCC1 WNYADZVDBIBLJJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- ZKXDGKXYMTYWTB-UHFFFAOYSA-N N-nitrosomorpholine Chemical compound O=NN1CCOCC1 ZKXDGKXYMTYWTB-UHFFFAOYSA-N 0.000 claims abstract description 12
- YLKFDHTUAUWZPQ-UHFFFAOYSA-N N-Nitrosodi-n-propylamine Chemical compound CCCN(N=O)CCC YLKFDHTUAUWZPQ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 150000002429 hydrazines Chemical class 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910001868 water Inorganic materials 0.000 claims abstract description 11
- 150000004005 nitrosamines Chemical class 0.000 claims abstract description 10
- DLGOEMSEDOSKAD-UHFFFAOYSA-N Carmustine Chemical compound ClCCNC(=O)N(N=O)CCCl DLGOEMSEDOSKAD-UHFFFAOYSA-N 0.000 claims abstract description 7
- UWSDONTXWQOZFN-UHFFFAOYSA-N N-nitrosopiperidine Chemical compound O=NN1CCCCC1 UWSDONTXWQOZFN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229960005243 carmustine Drugs 0.000 claims abstract description 7
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims abstract description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims abstract description 4
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims abstract description 4
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims abstract description 3
- 102100031650 C-X-C chemokine receptor type 4 Human genes 0.000 claims abstract 2
- 101000922348 Homo sapiens C-X-C chemokine receptor type 4 Proteins 0.000 claims abstract 2
- 101000603386 Homo sapiens Neuropeptide Y receptor type 1 Proteins 0.000 claims abstract 2
- 101000603420 Homo sapiens Nuclear pore complex-interacting protein family member A1 Proteins 0.000 claims abstract 2
- SJLBIPLIGYWGJV-UHFFFAOYSA-N N-nitroso-N-methyl-4-aminobutyric acid Chemical compound O=NN(C)CCCC(O)=O SJLBIPLIGYWGJV-UHFFFAOYSA-N 0.000 claims abstract 2
- 102100038845 Nuclear pore complex-interacting protein family member A1 Human genes 0.000 claims abstract 2
- 240000003864 Ulex europaeus Species 0.000 claims abstract 2
- LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical compound CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 claims abstract 2
- HVAAHUDGWQAAOJ-UHFFFAOYSA-N n-benzylethanamine Chemical compound CCNCC1=CC=CC=C1 HVAAHUDGWQAAOJ-UHFFFAOYSA-N 0.000 claims abstract 2
- 230000001590 oxidative effect Effects 0.000 claims description 12
- 230000004907 flux Effects 0.000 claims description 11
- 239000007800 oxidant agent Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- VIHRIIARIFUQLC-UHFFFAOYSA-N 3-hydrazinylpropanenitrile Chemical compound NNCCC#N VIHRIIARIFUQLC-UHFFFAOYSA-N 0.000 claims description 9
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 7
- USRHNLJOZRSGJY-UHFFFAOYSA-N butyl 2-(2-hydrazinylethoxy)acetate Chemical compound CCCCOC(=O)COCCNN USRHNLJOZRSGJY-UHFFFAOYSA-N 0.000 claims description 5
- FSORJURBSOMTCA-UHFFFAOYSA-N butyl 2-hydrazinylacetate Chemical compound CCCCOC(=O)CNN FSORJURBSOMTCA-UHFFFAOYSA-N 0.000 claims description 5
- 150000008282 halocarbons Chemical group 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 239000007790 solid phase Substances 0.000 claims description 2
- 239000013589 supplement Substances 0.000 claims 1
- 229920006395 saturated elastomer Polymers 0.000 abstract description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract description 2
- 238000003763 carbonization Methods 0.000 abstract 1
- 239000003989 dielectric material Substances 0.000 description 22
- 239000007789 gas Substances 0.000 description 19
- 150000002500 ions Chemical class 0.000 description 16
- -1 nitrosamine compound Chemical class 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- RTDCJKARQCRONF-UHFFFAOYSA-N N-Nitrosomethylethylamine Chemical compound CCN(C)N=O RTDCJKARQCRONF-UHFFFAOYSA-N 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 229910052733 gallium Inorganic materials 0.000 description 8
- QWMPVLLKTVYHRL-UHFFFAOYSA-N n-(nitrosomethyl)butan-1-amine Chemical compound CCCCNCN=O QWMPVLLKTVYHRL-UHFFFAOYSA-N 0.000 description 8
- ITBDKUCVKYSWMF-UHFFFAOYSA-N n-methyl-n-propylnitrous amide Chemical compound CCCN(C)N=O ITBDKUCVKYSWMF-UHFFFAOYSA-N 0.000 description 8
- VUZPGEIXNYGDJN-UHFFFAOYSA-N 1-nitroethanol Chemical compound CC(O)[N+]([O-])=O VUZPGEIXNYGDJN-UHFFFAOYSA-N 0.000 description 7
- 238000001659 ion-beam spectroscopy Methods 0.000 description 7
- ZGMCNGHHUQZNIH-UHFFFAOYSA-N n-butyl-n-ethylnitrous amide Chemical compound CCCCN(CC)N=O ZGMCNGHHUQZNIH-UHFFFAOYSA-N 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 229910002091 carbon monoxide Inorganic materials 0.000 description 5
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 239000011630 iodine Substances 0.000 description 4
- 229910052740 iodine Inorganic materials 0.000 description 4
- 230000001737 promoting effect Effects 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- YGDXPVCJAPKBJY-UHFFFAOYSA-N n-(2-nitrosoethyl)propan-1-amine Chemical compound CCCNCCN=O YGDXPVCJAPKBJY-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 150000001793 charged compounds Chemical class 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- WFPZPJSADLPSON-UHFFFAOYSA-N dinitrogen tetraoxide Chemical compound [O-][N+](=O)[N+]([O-])=O WFPZPJSADLPSON-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000000153 supplemental effect Effects 0.000 description 2
- JSZOAYXJRCEYSX-UHFFFAOYSA-N 1-nitropropane Chemical compound CCC[N+]([O-])=O JSZOAYXJRCEYSX-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000005749 Copper compound Substances 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000005679 Peltier effect Effects 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 150000001880 copper compounds Chemical class 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- GBQMPYDKVCCCJQ-UHFFFAOYSA-N copper;1-nitroethanol Chemical compound [Cu].CC(O)[N+]([O-])=O GBQMPYDKVCCCJQ-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000002828 nitro derivatives Chemical class 0.000 description 1
- MCSAJNNLRCFZED-UHFFFAOYSA-N nitroethane Chemical compound CC[N+]([O-])=O MCSAJNNLRCFZED-UHFFFAOYSA-N 0.000 description 1
- LYGJENNIWJXYER-UHFFFAOYSA-N nitromethane Chemical compound C[N+]([O-])=O LYGJENNIWJXYER-UHFFFAOYSA-N 0.000 description 1
- 125000000018 nitroso group Chemical group N(=O)* 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000003223 protective agent Substances 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- VUKBPKXBJCCBAN-UHFFFAOYSA-N tert-butyl N-amino-N-methylcarbamate Chemical compound C(=O)(OC(C)(C)C)N(N)C.C(=O)(OC(C)(C)C)N(N)C VUKBPKXBJCCBAN-UHFFFAOYSA-N 0.000 description 1
- ZPLINMFZMSNOJQ-UHFFFAOYSA-N tert-butyl n-amino-n-(2-methoxyethyl)carbamate Chemical compound COCCN(N)C(=O)OC(C)(C)C ZPLINMFZMSNOJQ-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
Claims (23)
- 誘電体の存在下での、銅の集束イオンビームエッチングの方法であって、
集束イオンビームを、エッチングすべき銅に対して向けること、
前記銅および前記誘電体を、ヒドラジンおよびヒドラジン誘導体、および化学構造R1N(−R2)−N=Oを有するニトロソアミンおよびニトロソアミン関連化合物からなる群から選択された化合物を含むエッチング促進剤に曝すことであって、R1およびR2は、線形または分岐炭化水素基またはハロゲン化炭化水素基であり、前記化合物は、最高で約220℃の沸点を有する、前記エッチング促進剤に曝すこと
を含む方法。 - 前記化合物は、約70℃〜約220℃の沸点を有する、請求項1に記載の方法。
- 前記ヒドラジンは、ヒドラジン一水和物を含み、前記ヒドラジン誘導体は、ヒドロキシエチルヒドラジン、シアノエチルヒドラジン、ブトキシカルボニルメチルヒドラジンおよびブトキシカルボニルメトキシエチルヒドラジンからなる群から選択される、請求項2に記載の方法。
- 前記炭化水素基は、メチル、エチル、プロピルおよびブチルから選択される、請求項1に記載の方法。
- 前記ニトロソアミンは、NDMA、NMEA、NDEA、NMPA、NEPA、NDPA、NMBAおよびNEBAからなる群から選択される、請求項1に記載の方法。
- 前記ニトロソアミン関連化合物は、直接または酸素を介して接続された前記R1およびR2基を有する、請求項1に記載の方法。
- 前記ニトロソアミン関連化合物は、NPYR、NPIP、NMORおよびカルムスチンからなる群から選択される、請求項1に記載の方法。
- 前記エッチング促進剤は、ヒドラジン一水和物、ヒドロキシエチルヒドラジン、NDMA、NDEAのうちの1つである、請求項1に記載の方法。
- 前記エッチング促進剤はさらに四酸化窒素を含む、請求項1に記載の方法。
- 前記銅および前記誘電体の温度を制御して、前記エッチング促進剤の揮発性および粘着係数を制御することをさらに含む、請求項1に記載の方法。
- 前記銅および前記誘電体の温度を制御することは、前記温度を約−15℃〜約+10℃に制御することを含む、請求項10に記載の方法。
- 前記エッチング促進剤は、約21℃以下の低い沸点を有する酸化剤をさらに含む、請求項10に記載の方法。
- 前記酸化剤は、四酸化窒素を含む、請求項12に記載の方法。
- 前記四酸化窒素が、前記誘電体および前記銅の表面に固相で集められるように、前記銅および前記誘電体を、約−12℃程度の温度に冷却することを含む、請求項13に記載の方法。
- 誘電体の存在下での銅の集束イオンビームエッチングの方法であって、
集束イオンビームを前記銅の一部に向けること、
エッチング促進剤に前記銅を曝すことであって、前記エッチング促進剤は、前記誘電体をエッチングから保護するために選択された第1の化合物であって、ヒドラジンと水とから成る溶液、およびヒドラジン誘導体からなる群から選択され、約220℃以下の沸点を有する前記第1の化合物と、スパッタされた導電性の銅を非導電性にする強力な酸化剤を含む第2の化合物とを含む、前記エッチング促進剤に前記銅を曝すこと
を含む方法。 - 前記第1の化合物は、前記誘電体上での十分な滞留時間を与えて、イオンビームエッチングによる誘電体損失を補充するために、低〜中程度の揮発性を有するように選択される、請求項15に記載の方法。
- 前記銅は、前記エッチング促進剤に対する直接的な曝露から影になった第1の面を有する高アスペクト比の孔内に位置しており、前記第1の化合物は、前記促進剤が、直接作用する第2の面から前記第1の面に十分な流束で反射して、前記第1の面における再堆積した銅を酸化させるような揮発性を有するように選択される、請求項16に記載の方法。
- 銅エッチングイオンビーム電流と、前記エッチング促進剤の流束との比を調節して、前記エッチングの近傍の面に再堆積したスパッタされた銅を実質的に完全に酸化させることをさらに含む、請求項15に記載の方法。
- 前記第1の化合物は、ヒドラジン一水和物、ヒドロキシエチルヒドラジン、シアノエチルヒドラジン、ブトキシカルボニルメチルヒドラジンおよびブトキシカルボニルメトキシエチルヒドラジンからなる群から選択される、請求項15に記載の方法。
- 前記第2の化合物は、四酸化窒素を含む、請求項15に記載の方法。
- 前記誘電体は、従来の誘電体または低誘電率誘電体の一方である、請求項13に記載の方法。
- 誘電体の存在下での銅の集束イオンビームエッチングの方法であって、
前記銅および前記誘電体を、約−15℃〜約10℃の温度に冷却すること、
集束イオンビームを前記銅の一部に向けること、
前記銅および前記誘電体を、四酸化窒素を含むエッチング促進剤に曝すこと
を含む方法。 - スパッタされた銅が、実質的に完全に酸化され、かつ前記イオンビームによってスパッタされた誘電体が実質的に補充されるように、銅エッチングイオンビーム電流を、四酸化窒素の流束に対して調節することをさらに含む、請求項22に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/547,368 | 2009-08-25 | ||
US12/547,368 US20110048929A1 (en) | 2009-08-25 | 2009-08-25 | FIB Process for Selective and Clean Etching of Copper |
US12/727,191 US20110048931A1 (en) | 2009-08-25 | 2010-03-18 | FIB Process for Selective and Clean Etching of Copper |
US12/727,191 | 2010-03-18 | ||
PCT/US2010/046449 WO2011025770A1 (en) | 2009-08-25 | 2010-08-24 | Focused ion beam process for selective and clean etching of copper |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013503485A true JP2013503485A (ja) | 2013-01-31 |
JP2013503485A5 JP2013503485A5 (ja) | 2013-10-10 |
Family
ID=43623227
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012526903A Pending JP2013503485A (ja) | 2009-08-25 | 2010-08-24 | 銅の選択的かつ清浄なエッチングのための集束イオンビームプロセス |
Country Status (7)
Country | Link |
---|---|
US (2) | US20110048931A1 (ja) |
EP (1) | EP2470688B1 (ja) |
JP (1) | JP2013503485A (ja) |
KR (1) | KR20120065368A (ja) |
IL (1) | IL218131A0 (ja) |
SG (1) | SG178505A1 (ja) |
WO (1) | WO2011025770A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014232876A (ja) * | 2013-05-28 | 2014-12-11 | エフ・イ−・アイ・カンパニー | 集束イオン・ビームを使用した半導体デバイスの平面デプロセッシング用の前駆体 |
JP2020513161A (ja) * | 2017-04-04 | 2020-04-30 | テスカン ブルノ エスアールオーTESCAN BRNO s.r.o. | 半導体デバイスの金属と誘電体が混在した1つ以上の層をエッチングする方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3079963A1 (fr) * | 2018-04-04 | 2019-10-11 | Tescan Brno, S.R.O. | Procede de gravure d'une ou de plusieurs couches mixtes de metal et de dielectrique d'un dispositif semi-conducteur |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003526739A (ja) * | 2000-03-10 | 2003-09-09 | フェイ カンパニ | 差分スパッタリング速度を減少する装置及び方法 |
JP2004312017A (ja) * | 2003-04-02 | 2004-11-04 | Fei Co | ダミー銅デプロセッシング |
JP2008171800A (ja) * | 2006-10-31 | 2008-07-24 | Fei Co | 荷電粒子ビーム処理用保護層 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3804138B2 (ja) * | 1996-02-09 | 2006-08-02 | Jsr株式会社 | ArFエキシマレーザー照射用感放射線性樹脂組成物 |
US6218022B1 (en) * | 1996-09-20 | 2001-04-17 | Toray Engineering Co., Ltd. | Resin etching solution and process for etching polyimide resins |
US6103680A (en) * | 1998-12-31 | 2000-08-15 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition and method for removing photoresist and/or plasma etching residues |
US6407001B1 (en) * | 2000-06-30 | 2002-06-18 | Intel Corporation | Focused ion beam etching of copper |
EP1423870A2 (en) * | 2001-08-27 | 2004-06-02 | Nptest, Inc. | Process for charged particle beam micro-machining of copper |
DE10248481B4 (de) * | 2002-10-17 | 2006-04-27 | Siltronic Ag | Verfahren und Vorrichtung zur nasschemischen Behandlung von Silicium |
US7060196B2 (en) * | 2003-10-03 | 2006-06-13 | Credence Systems Corporation | FIB milling of copper over organic dielectrics |
US20060065853A1 (en) * | 2004-09-30 | 2006-03-30 | Chad Rue | Apparatus and method for manipulating sample temperature for focused ion beam processing |
-
2010
- 2010-03-18 US US12/727,191 patent/US20110048931A1/en not_active Abandoned
- 2010-08-24 WO PCT/US2010/046449 patent/WO2011025770A1/en active Application Filing
- 2010-08-24 SG SG2012011607A patent/SG178505A1/en unknown
- 2010-08-24 US US13/504,089 patent/US8894828B2/en not_active Expired - Fee Related
- 2010-08-24 KR KR1020127007421A patent/KR20120065368A/ko not_active Application Discontinuation
- 2010-08-24 EP EP10812545.1A patent/EP2470688B1/en not_active Not-in-force
- 2010-08-24 JP JP2012526903A patent/JP2013503485A/ja active Pending
-
2012
- 2012-02-15 IL IL218131A patent/IL218131A0/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003526739A (ja) * | 2000-03-10 | 2003-09-09 | フェイ カンパニ | 差分スパッタリング速度を減少する装置及び方法 |
JP2004312017A (ja) * | 2003-04-02 | 2004-11-04 | Fei Co | ダミー銅デプロセッシング |
JP2008171800A (ja) * | 2006-10-31 | 2008-07-24 | Fei Co | 荷電粒子ビーム処理用保護層 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014232876A (ja) * | 2013-05-28 | 2014-12-11 | エフ・イ−・アイ・カンパニー | 集束イオン・ビームを使用した半導体デバイスの平面デプロセッシング用の前駆体 |
JP2020513161A (ja) * | 2017-04-04 | 2020-04-30 | テスカン ブルノ エスアールオーTESCAN BRNO s.r.o. | 半導体デバイスの金属と誘電体が混在した1つ以上の層をエッチングする方法 |
Also Published As
Publication number | Publication date |
---|---|
SG178505A1 (en) | 2012-03-29 |
KR20120065368A (ko) | 2012-06-20 |
IL218131A0 (en) | 2012-06-28 |
EP2470688B1 (en) | 2014-04-16 |
US20110048931A1 (en) | 2011-03-03 |
US8894828B2 (en) | 2014-11-25 |
EP2470688A1 (en) | 2012-07-04 |
EP2470688A4 (en) | 2012-09-05 |
US20120211356A1 (en) | 2012-08-23 |
WO2011025770A1 (en) | 2011-03-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP3193359A1 (en) | Semiconductor element cleaning solution that suppresses damage to tantalum-containing materials, and cleaning method using same | |
TWI470696B (zh) | 半導體製造之表面處理技術 | |
US8120113B2 (en) | Metal line in semiconductor device | |
JP2013503485A (ja) | 銅の選択的かつ清浄なエッチングのための集束イオンビームプロセス | |
US8080505B2 (en) | Slurry composition and method for chemical mechanical polishing of copper integrated with tungsten based barrier metals | |
WO2010120948A1 (en) | Enhanced focused ion beam etching of dielectrics and silicon | |
JP4544425B2 (ja) | 希土類金属部材の製造方法 | |
KR100856542B1 (ko) | 구리 화학적 기계적 연마공정용 슬러리 및 이를 이용한구리 배선 형성방법 | |
US20200357657A1 (en) | Method for treating substrate, method for manufacturing semiconductor device, and kit for treating substrate | |
KR102412268B1 (ko) | 표시장치용 어레이 기판의 제조방법 | |
JP2008118104A (ja) | 金属用研磨液とその製造方法及び金属用研磨液を用いた被研磨膜の研磨方法 | |
JP5725145B2 (ja) | 金属用研磨液とその製造方法及び金属用研磨液を用いた被研磨膜の研磨方法 | |
KR20210115794A (ko) | 코발트막 식각 조성물 | |
KR19990030132A (ko) | 실리콘 이산화물-함유층을 에칭하기 위한 방법 | |
JP2016157714A (ja) | エッチング液、エッチング方法および半導体基板製品の製造方法 | |
US20110048929A1 (en) | FIB Process for Selective and Clean Etching of Copper | |
KR102310093B1 (ko) | 액정표시장치용 어레이 기판의 제조방법 | |
JP5703060B2 (ja) | 化学的機械的研磨液 | |
KR102668574B1 (ko) | 식각 조성물 | |
KR102343735B1 (ko) | 구리계 금속막용 식각액 조성물, 이를 이용한 디스플레이용 어레이 기판의 제조방법, 및 디스플레이용 어레이 기판 | |
KR100869642B1 (ko) | 반도체 소자의 알루미늄 금속배선 부식 방지 방법 | |
JP2006100672A (ja) | プラズマ処理による試料処理方法および試料処理装置 | |
KR20230128967A (ko) | 루테늄 식각액 조성물, 이를 이용한 패턴의 형성 방법 및 어레이 기판의 제조방법, 및 이에 따라 제조된 어레이 기판 | |
US20230365864A1 (en) | Etchant | |
JP2006135072A (ja) | 研磨方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130822 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130822 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140630 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140708 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20141202 |