JP2014232876A - 集束イオン・ビームを使用した半導体デバイスの平面デプロセッシング用の前駆体 - Google Patents
集束イオン・ビームを使用した半導体デバイスの平面デプロセッシング用の前駆体 Download PDFInfo
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- JP2014232876A JP2014232876A JP2014107733A JP2014107733A JP2014232876A JP 2014232876 A JP2014232876 A JP 2014232876A JP 2014107733 A JP2014107733 A JP 2014107733A JP 2014107733 A JP2014107733 A JP 2014107733A JP 2014232876 A JP2014232876 A JP 2014232876A
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- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 66
- 239000002243 precursor Substances 0.000 title claims abstract description 41
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000010949 copper Substances 0.000 claims abstract description 52
- 229910052802 copper Inorganic materials 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 44
- ZCDNRPPFBQDQHR-SSYATKPKSA-N Syrosingopine Chemical compound C1=C(OC)C(OC(=O)OCC)=C(OC)C=C1C(=O)O[C@H]1[C@H](OC)[C@@H](C(=O)OC)[C@H]2C[C@@H]3C(NC=4C5=CC=C(OC)C=4)=C5CCN3C[C@H]2C1 ZCDNRPPFBQDQHR-SSYATKPKSA-N 0.000 claims abstract description 12
- 238000003801 milling Methods 0.000 claims description 49
- 150000002500 ions Chemical class 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 32
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 235000012239 silicon dioxide Nutrition 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 229910021426 porous silicon Inorganic materials 0.000 claims description 10
- JJKWHOSQTYYFAE-UHFFFAOYSA-N 2-methoxyacetyl chloride Chemical compound COCC(Cl)=O JJKWHOSQTYYFAE-UHFFFAOYSA-N 0.000 claims description 8
- ICPWFHKNYYRBSZ-UHFFFAOYSA-M 2-methoxypropanoate Chemical compound COC(C)C([O-])=O ICPWFHKNYYRBSZ-UHFFFAOYSA-M 0.000 claims description 8
- WFOWWWKKYONWQY-UHFFFAOYSA-N 2-nitroethyl acetate Chemical compound CC(=O)OCC[N+]([O-])=O WFOWWWKKYONWQY-UHFFFAOYSA-N 0.000 claims description 8
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 claims description 8
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 claims description 8
- FTKASJMIPSSXBP-UHFFFAOYSA-N ethyl 2-nitroacetate Chemical compound CCOC(=O)C[N+]([O-])=O FTKASJMIPSSXBP-UHFFFAOYSA-N 0.000 claims description 8
- YKYONYBAUNKHLG-UHFFFAOYSA-N n-Propyl acetate Natural products CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 claims description 8
- XQMNREAJJOSXMH-UHFFFAOYSA-N propyl 2-nitroacetate Chemical compound CCCOC(=O)C[N+]([O-])=O XQMNREAJJOSXMH-UHFFFAOYSA-N 0.000 claims description 8
- 229940090181 propyl acetate Drugs 0.000 claims description 8
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 52
- 239000007789 gas Substances 0.000 description 47
- 239000000523 sample Substances 0.000 description 19
- 239000003989 dielectric material Substances 0.000 description 14
- 239000004020 conductor Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 229910001338 liquidmetal Inorganic materials 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003090 exacerbative effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011533 mixed conductor Substances 0.000 description 1
- JCZMXVGQBBATMY-UHFFFAOYSA-N nitro acetate Chemical compound CC(=O)O[N+]([O-])=O JCZMXVGQBBATMY-UHFFFAOYSA-N 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】除去するターゲット・エリアを画定するステップであり、ターゲット・エリアが、半導体デバイスの銅と誘電体の混合層の少なくとも一部分を含むステップと、ターゲット・エリアに向かって前駆体ガスを導くステップ404と、前駆体ガスの存在下で、ターゲット・エリアに向かって集束イオン・ビームを導き406、それによって銅と誘電体の第1の混合層の少なくとも一部分を除去し、ミリングされたターゲット・エリア内に均一に平滑な底部を形成するステップ408とを含む。この前駆体ガスによって、集束イオン・ビームは、誘電体と実質的に同じ速度で銅をミリングする。好ましくは、前駆体ガスがニトロ酢酸メチルを含む。
【選択図】図4
Description
14 液体金属イオン源
16 集束カラム
18 イオン・ビーム
22 サンプル
24 X−Yステージ
Claims (15)
- 銅と誘電体の1つまたは複数の混合層をターゲットのエリアから除去する方法であって、
除去するターゲット・エリアを画定するステップであり、前記ターゲット・エリアが、半導体デバイスの銅と誘電体の混合層の少なくとも一部分を含むステップと、
前記ターゲット・エリアに向かって前駆体ガスを導くステップと、
前記前駆体ガスの存在下で、前記ターゲット・エリアに向かって集束イオン・ビームを導き、それによって銅と誘電体の第1の混合層の少なくとも一部分を除去し、ミリングされた前記ターゲット・エリア内に均一に平滑な底部を形成するステップと
を含み、前記前駆体ガスによって、前記集束イオン・ビームが、前記誘電体と実質的に同じ速度で前記銅をミリングする
方法。 - 前記前駆体ガスが、酢酸メチル、ニトロ酢酸メチル、酢酸エチル、ニトロ酢酸エチル、酢酸プロピル、ニトロ酢酸プロピル、ニトロエチルアセテート、メトキシ酢酸メチルおよびメトキシアセチルクロリドを含むグループから選択された、請求項1に記載の方法。
- 銅と誘電体の2つ以上の混合層を除去する、請求項1または2に記載の方法。
- 前記銅と誘電体の2つ以上の混合層が誘電体層によって分離されている、請求項3に記載の方法。
- 銅と誘電体のそれぞれの混合層を除去し、ミリングされた前記ターゲット・エリア内に実質的に均一な底部を形成し、その後に銅と誘電体の次の混合層をミリングする、請求項3に記載の方法。
- 前記誘電体が低誘電率誘電体を含む、請求項1から5のいずれか一項に記載の方法。
- 前記誘電体が、炭素がドープされた二酸化シリコン、多孔質二酸化シリコンおよび炭素がドープされた多孔質二酸化シリコンを含むグループから選択された、請求項1から6のいずれか一項に記載の方法。
- ミリングされた前記ターゲット・エリアの前記底部が、少なくとも長さ50マイクロメートル×幅50マイクロメートルである、請求項1から7のいずれか一項に記載の方法。
- 前記ターゲット・エリアが炭化シリコン(SiC)キャッピング層を含む、請求項1から8のいずれか一項に記載の方法。
- 複数の材料層を除去する集束イオン・ビーム・システムであって、
イオン源と、
前記イオン源から半導体デバイス上のターゲット・エリアに向かってイオンの集束ビームを導くイオン・ビーム・カラムであり、前記集束イオン・ビームを導いて、前記ターゲット・エリアの少なくとも一部分をミリングによって除去し、実質的に平面の均一な表面を有するミリング底部を形成するようにプログラムされたイオン・カラムと、
前記ターゲット・エリアに向かって前駆体ガスを導くガス注入システムと
を備え、前記前駆体ガスによって、前記集束イオン・ビームが、銅と誘電体の混合層中の前記銅と前記誘電体を実質的に同じ速度でミリングする
集束イオン・ビーム・システム。 - 前記イオン源がプラズマ・イオン源である、請求項10に記載の集束イオン・ビーム・システム。
- 前記イオン・ビーム中の前記イオンが、Xe+、Ga+、Ar+、Kr+、O+、O2 +、N+、NO+、NO2 +、Au+、Bi+、Si+、Ge+を含むグループから選択された、請求項10または11に記載の集束イオン・ビーム・システム。
- 前記前駆体ガスが、酢酸メチル、ニトロ酢酸メチル、酢酸エチル、ニトロ酢酸エチル、酢酸プロピル、ニトロ酢酸プロピル、ニトロエチルアセテート、メトキシ酢酸メチルおよびメトキシアセチルクロリドを含むグループから選択された、請求項10から12のいずれか一項に記載の集束イオン・ビーム・システム。
- 前記誘電体が低誘電率誘電体を含む、請求項10から13のいずれか一項に記載の集束イオン・ビーム・システム。
- 前記誘電体が、炭素がドープされた二酸化シリコン、多孔質二酸化シリコンおよび炭素がドープされた多孔質二酸化シリコンを含むグループから選択された、請求項10から14のいずれか一項に記載の集束イオン・ビーム・システム。
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