JP2013249511A5 - - Google Patents

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Publication number
JP2013249511A5
JP2013249511A5 JP2012124713A JP2012124713A JP2013249511A5 JP 2013249511 A5 JP2013249511 A5 JP 2013249511A5 JP 2012124713 A JP2012124713 A JP 2012124713A JP 2012124713 A JP2012124713 A JP 2012124713A JP 2013249511 A5 JP2013249511 A5 JP 2013249511A5
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Japan
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flow rate
raw material
gas
temperature
rate adjustment
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JP2012124713A
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English (en)
Japanese (ja)
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JP2013249511A (ja
JP5895712B2 (ja
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Publication of JP2013249511A5 publication Critical patent/JP2013249511A5/ja
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JP2012124713A 2012-05-31 2012-05-31 原料ガス供給装置、成膜装置、原料ガスの供給方法及び記憶媒体 Expired - Fee Related JP5895712B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012124713A JP5895712B2 (ja) 2012-05-31 2012-05-31 原料ガス供給装置、成膜装置、原料ガスの供給方法及び記憶媒体

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Application Number Priority Date Filing Date Title
JP2012124713A JP5895712B2 (ja) 2012-05-31 2012-05-31 原料ガス供給装置、成膜装置、原料ガスの供給方法及び記憶媒体

Publications (3)

Publication Number Publication Date
JP2013249511A JP2013249511A (ja) 2013-12-12
JP2013249511A5 true JP2013249511A5 (https=) 2014-11-13
JP5895712B2 JP5895712B2 (ja) 2016-03-30

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JP2012124713A Expired - Fee Related JP5895712B2 (ja) 2012-05-31 2012-05-31 原料ガス供給装置、成膜装置、原料ガスの供給方法及び記憶媒体

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JP (1) JP5895712B2 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016040402A (ja) * 2014-08-12 2016-03-24 東京エレクトロン株式会社 原料ガス供給装置
US10100407B2 (en) * 2014-12-19 2018-10-16 Lam Research Corporation Hardware and process for film uniformity improvement
KR101899201B1 (ko) * 2015-03-27 2018-09-14 도쿄엘렉트론가부시키가이샤 원료 공급 장치, 원료 공급 방법 및 기억 매체
JP6693106B2 (ja) * 2015-03-27 2020-05-13 東京エレクトロン株式会社 原料供給装置、原料供給方法及び記憶媒体
KR102104728B1 (ko) * 2015-09-30 2020-04-24 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
JP6627474B2 (ja) * 2015-09-30 2020-01-08 東京エレクトロン株式会社 原料ガス供給装置、原料ガス供給方法及び記憶媒体
JP6565645B2 (ja) * 2015-12-02 2019-08-28 東京エレクトロン株式会社 原料ガス供給装置、原料ガス供給方法及び記憶媒体
GB201523156D0 (en) * 2015-12-31 2016-02-17 Pilkington Group Ltd High strength glass containers
JP6698153B2 (ja) * 2016-04-26 2020-05-27 日本エア・リキード合同会社 前駆体の供給システムおよび前駆体の供給方法
JP6787215B2 (ja) * 2017-03-27 2020-11-18 株式会社豊田中央研究所 成膜装置と半導体装置の製造方法
JP7281285B2 (ja) * 2019-01-28 2023-05-25 株式会社堀場エステック 濃度制御装置、及び、ゼロ点調整方法、濃度制御装置用プログラム
JP7226222B2 (ja) * 2019-09-24 2023-02-21 東京エレクトロン株式会社 ガス供給装置及びガス供給方法
JP7516742B2 (ja) * 2019-11-05 2024-07-17 東京エレクトロン株式会社 基板を処理する装置、処理ガスを濃縮する装置、及び基板を処理する方法
US11513108B2 (en) * 2020-01-14 2022-11-29 Mks Instruments, Inc. Method and apparatus for pulse gas delivery with concentration measurement
KR20220122917A (ko) * 2021-02-26 2022-09-05 (주)지오엘리먼트 넓은 가용 온도 범위를 가지는 고순도 전구체 기화 시스템
KR20220122434A (ko) * 2021-02-26 2022-09-02 (주)지오엘리먼트 고순도 전구체를 위한 기화 시스템
CN115572956B (zh) * 2022-10-14 2024-09-17 华虹半导体(无锡)有限公司 调控晶圆原子层化学沉积薄膜厚度均匀性的方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61279678A (ja) * 1985-06-05 1986-12-10 Nippon Tairan Kk 流量制御装置
JPH0610144A (ja) * 1992-06-29 1994-01-18 Matsushita Electric Ind Co Ltd 低蒸気圧材料供給装置
JPH0718449A (ja) * 1993-07-02 1995-01-20 Hitachi Ltd 高温気体定流量発生装置およびプロセス装置
US5614247A (en) * 1994-09-30 1997-03-25 International Business Machines Corporation Apparatus for chemical vapor deposition of aluminum oxide
US5648113A (en) * 1994-09-30 1997-07-15 International Business Machines Corporation Aluminum oxide LPCVD system
JP2866374B1 (ja) * 1998-01-27 1999-03-08 三菱マテリアルポリシリコン株式会社 エピタキシャル成長用ガスの供給方法及びその装置
JP4213331B2 (ja) * 1999-06-22 2009-01-21 東京エレクトロン株式会社 有機金属気相成長方法及び有機金属気相成長装置
JP3905678B2 (ja) * 2000-02-28 2007-04-18 株式会社堀場製作所 薄膜堆積方法とその装置および薄膜堆積方法に用いるｆｔｉｒガス分析計並びに薄膜堆積方法に用いる混合ガス供給装置
JP2002356779A (ja) * 2001-05-29 2002-12-13 Murata Mfg Co Ltd 誘電体薄膜の製造装置及び誘電体薄膜の成膜方法
JP2006324532A (ja) * 2005-05-20 2006-11-30 Matsushita Electric Ind Co Ltd 薄膜堆積方法および薄膜堆積装置

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