JP2013232274A5 - - Google Patents

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Publication number
JP2013232274A5
JP2013232274A5 JP2013095602A JP2013095602A JP2013232274A5 JP 2013232274 A5 JP2013232274 A5 JP 2013232274A5 JP 2013095602 A JP2013095602 A JP 2013095602A JP 2013095602 A JP2013095602 A JP 2013095602A JP 2013232274 A5 JP2013232274 A5 JP 2013232274A5
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JP
Japan
Prior art keywords
layer
track width
afm
stack
layer structure
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Application number
JP2013095602A
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English (en)
Japanese (ja)
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JP2013232274A (ja
JP5830053B2 (ja
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Priority claimed from US13/460,058 external-priority patent/US8822046B2/en
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Publication of JP2013232274A publication Critical patent/JP2013232274A/ja
Publication of JP2013232274A5 publication Critical patent/JP2013232274A5/ja
Application granted granted Critical
Publication of JP5830053B2 publication Critical patent/JP5830053B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013095602A 2012-04-30 2013-04-30 スタック、およびそれを有する装置 Expired - Fee Related JP5830053B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/460,058 2012-04-30
US13/460,058 US8822046B2 (en) 2012-04-30 2012-04-30 Stack with wide seed layer

Publications (3)

Publication Number Publication Date
JP2013232274A JP2013232274A (ja) 2013-11-14
JP2013232274A5 true JP2013232274A5 (enExample) 2013-12-26
JP5830053B2 JP5830053B2 (ja) 2015-12-09

Family

ID=48288832

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013095602A Expired - Fee Related JP5830053B2 (ja) 2012-04-30 2013-04-30 スタック、およびそれを有する装置

Country Status (5)

Country Link
US (2) US8822046B2 (enExample)
EP (1) EP2660818A1 (enExample)
JP (1) JP5830053B2 (enExample)
KR (1) KR101442097B1 (enExample)
CN (1) CN103383848B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8822046B2 (en) * 2012-04-30 2014-09-02 Seagate Technology Llc Stack with wide seed layer
US20140218821A1 (en) * 2013-02-07 2014-08-07 Seagate Technology Llc Data reader with magnetic seed lamination
US9478239B2 (en) * 2013-06-27 2016-10-25 Seagate Technology Llc Reader structure with barrier layer contacting shield
US9082434B2 (en) * 2013-10-30 2015-07-14 HGST Netherlands B.V. Asymmetric sensitivity reader
US20150221328A1 (en) * 2014-01-31 2015-08-06 HGST Netherlands B.V. Magnetic read sensor with bar shaped afm and pinned layer structure and soft magnetic bias aligned with free layer
JP2016053202A (ja) 2014-09-04 2016-04-14 東京エレクトロン株式会社 処理装置
US20160365104A1 (en) * 2015-06-15 2016-12-15 Seagate Technology Llc Magnetoresistive sensor fabrication
US9552834B1 (en) * 2015-09-28 2017-01-24 Seagate Technology Llc Stabilization of one or more upper sensors in multi-sensor readers
DE102016105380A1 (de) * 2016-03-22 2017-09-28 Infineon Technologies Ag Elektrischer Schirm zwischen magnetoresistiven Sensorelementen
US10614838B2 (en) 2018-08-23 2020-04-07 Seagate Technology Llc Reader with side shields decoupled from a top shield
US10777222B1 (en) * 2020-02-14 2020-09-15 Western Digital Technologies, Inc. Two-dimensional magnetic recording (TDMR) read head structure with different stacked sensors and disk drive incorporating the structure
CN113449834B (zh) * 2020-03-26 2025-01-28 希捷科技有限公司 具有多层合成铁磁体自由层的读取器
US10943611B1 (en) * 2020-03-31 2021-03-09 Western Digital Technologies, Inc. Spintronic devices with narrow spin polarization layers
US11423929B1 (en) 2020-08-25 2022-08-23 Seagate Technology Llc Reader with wide synthetic antiferromagnetic structure optimized for high stability and low noise
CN120108436A (zh) 2023-12-05 2025-06-06 西部数据技术公司 Dfl读取器信号侧凸块不平衡减少

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JP3272329B2 (ja) * 1999-07-26 2002-04-08 アルプス電気株式会社 薄膜磁気ヘッド及び浮上式磁気ヘッド
JP3537723B2 (ja) * 2000-01-05 2004-06-14 アルプス電気株式会社 薄膜磁気ヘッド及び浮上式磁気ヘッド
US6344953B1 (en) 2000-03-08 2002-02-05 Seagate Technology, Llc Magnetoresistive read sensor using overlaid leads with insulating current guide layer
US6856493B2 (en) * 2002-03-21 2005-02-15 International Business Machines Corporation Spin valve sensor with in-stack biased free layer and antiparallel (AP) pinned layer pinned without a pinning layer
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US7229706B2 (en) * 2003-01-15 2007-06-12 Alps Electric Co., Ltd. Magnetic detecting element having pinned magnetic layers disposed on both sides of free magnetic layer
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US7672087B2 (en) 2007-03-27 2010-03-02 Tdk Corporation Magnetoresistive effect element having bias layer with internal stress controlled
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US8238063B2 (en) 2009-07-07 2012-08-07 Seagate Technology Llc Magnetoresistive sensor with synthetic antiferromagnetic cap or seed layers
JP5529648B2 (ja) * 2009-08-04 2014-06-25 キヤノンアネルバ株式会社 磁気センサ積層体、その成膜方法、成膜制御プログラムおよび記録媒体
US8582249B2 (en) * 2011-04-26 2013-11-12 Seagate Technology Llc Magnetic element with reduced shield-to-shield spacing
US8822046B2 (en) * 2012-04-30 2014-09-02 Seagate Technology Llc Stack with wide seed layer

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