JP2013201430A5 - - Google Patents
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- Publication number
- JP2013201430A5 JP2013201430A5 JP2013032113A JP2013032113A JP2013201430A5 JP 2013201430 A5 JP2013201430 A5 JP 2013201430A5 JP 2013032113 A JP2013032113 A JP 2013032113A JP 2013032113 A JP2013032113 A JP 2013032113A JP 2013201430 A5 JP2013201430 A5 JP 2013201430A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- oxide semiconductor
- heat treatment
- hydrogen
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013032113A JP6257900B2 (ja) | 2012-02-23 | 2013-02-21 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012037818 | 2012-02-23 | ||
| JP2012037818 | 2012-02-23 | ||
| JP2013032113A JP6257900B2 (ja) | 2012-02-23 | 2013-02-21 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013201430A JP2013201430A (ja) | 2013-10-03 |
| JP2013201430A5 true JP2013201430A5 (enExample) | 2016-03-24 |
| JP6257900B2 JP6257900B2 (ja) | 2018-01-10 |
Family
ID=49521366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013032113A Expired - Fee Related JP6257900B2 (ja) | 2012-02-23 | 2013-02-21 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6257900B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10388738B2 (en) | 2016-04-01 | 2019-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Composite oxide semiconductor and method for manufacturing the same |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5537787B2 (ja) * | 2008-09-01 | 2014-07-02 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR102503687B1 (ko) * | 2009-07-03 | 2023-02-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| WO2011004723A1 (en) * | 2009-07-10 | 2011-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method the same |
| WO2011062043A1 (en) * | 2009-11-20 | 2011-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US20110240462A1 (en) * | 2010-04-02 | 2011-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Deposition apparatus and method for manufacturing semiconductor device |
| US8906756B2 (en) * | 2010-05-21 | 2014-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
-
2013
- 2013-02-21 JP JP2013032113A patent/JP6257900B2/ja not_active Expired - Fee Related
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