JP6257900B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP6257900B2
JP6257900B2 JP2013032113A JP2013032113A JP6257900B2 JP 6257900 B2 JP6257900 B2 JP 6257900B2 JP 2013032113 A JP2013032113 A JP 2013032113A JP 2013032113 A JP2013032113 A JP 2013032113A JP 6257900 B2 JP6257900 B2 JP 6257900B2
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Japan
Prior art keywords
layer
oxide semiconductor
film
oxygen
oxide
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Expired - Fee Related
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JP2013032113A
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Japanese (ja)
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JP2013201430A (ja
JP2013201430A5 (enExample
Inventor
山崎　舜平
舜平 山崎
正美 神長
正美 神長
輝正 池山
輝正 池山
純一 肥塚
純一 肥塚
岡崎　健一
健一 岡崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2013032113A priority Critical patent/JP6257900B2/ja
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Publication of JP2013201430A5 publication Critical patent/JP2013201430A5/ja
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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
JP2013032113A 2012-02-23 2013-02-21 半導体装置の作製方法 Expired - Fee Related JP6257900B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013032113A JP6257900B2 (ja) 2012-02-23 2013-02-21 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012037818 2012-02-23
JP2012037818 2012-02-23
JP2013032113A JP6257900B2 (ja) 2012-02-23 2013-02-21 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2013201430A JP2013201430A (ja) 2013-10-03
JP2013201430A5 JP2013201430A5 (enExample) 2016-03-24
JP6257900B2 true JP6257900B2 (ja) 2018-01-10

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ID=49521366

Family Applications (1)

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JP2013032113A Expired - Fee Related JP6257900B2 (ja) 2012-02-23 2013-02-21 半導体装置の作製方法

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JP (1) JP6257900B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10388738B2 (en) 2016-04-01 2019-08-20 Semiconductor Energy Laboratory Co., Ltd. Composite oxide semiconductor and method for manufacturing the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5537787B2 (ja) * 2008-09-01 2014-07-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102503687B1 (ko) * 2009-07-03 2023-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
WO2011004723A1 (en) * 2009-07-10 2011-01-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method the same
WO2011062043A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20110240462A1 (en) * 2010-04-02 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Deposition apparatus and method for manufacturing semiconductor device
US8906756B2 (en) * 2010-05-21 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

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JP2013201430A (ja) 2013-10-03

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