JP2013201430A5 - - Google Patents
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- Publication number
- JP2013201430A5 JP2013201430A5 JP2013032113A JP2013032113A JP2013201430A5 JP 2013201430 A5 JP2013201430 A5 JP 2013201430A5 JP 2013032113 A JP2013032113 A JP 2013032113A JP 2013032113 A JP2013032113 A JP 2013032113A JP 2013201430 A5 JP2013201430 A5 JP 2013201430A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- oxide semiconductor
- heat treatment
- hydrogen
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 8
- 238000010438 heat treatment Methods 0.000 claims 4
- 239000001257 hydrogen Substances 0.000 claims 4
- 229910052739 hydrogen Inorganic materials 0.000 claims 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- -1 hydrogen compound Chemical class 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 238000009832 plasma treatment Methods 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 1
Claims (3)
減圧下で、前記酸化物半導体層から水素又は水素化合物が離脱する温度、又はそれ以上の温度で熱処理を行うことを特徴とする半導体装置の作製方法。 After forming the source electrode and the drain electrode over the island-shaped oxide semiconductor layer having a region overlapping with the gate electrode,
A method for manufacturing a semiconductor device, wherein heat treatment is performed under reduced pressure at a temperature at which hydrogen or a hydrogen compound is released from the oxide semiconductor layer or higher.
減圧下で、前記酸化物半導体層から水素又は水素化合物が離脱する温度、又はそれ以上の温度で熱処理を行い、
前記熱処理後に、酸素を含むガスを用いたプラズマ処理により、前記酸化物半導体層に酸素を供給することを特徴とする半導体装置の作製方法。 After forming the source electrode and the drain electrode over the island-shaped oxide semiconductor layer having a region overlapping with the gate electrode,
Under reduced pressure, heat treatment is performed at a temperature at which hydrogen or a hydrogen compound is released from the oxide semiconductor layer, or at a temperature higher than that,
After the heat treatment , oxygen is supplied to the oxide semiconductor layer by plasma treatment using a gas containing oxygen.
前記熱処理及び前記プラズマ処理は、前記酸化物半導体層を大気開放せずに連続的に行うことを特徴とする半導体装置の作製方法。 In claim 2,
The method for manufacturing a semiconductor device, wherein the heat treatment and the plasma treatment are performed continuously without opening the oxide semiconductor layer to the atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013032113A JP6257900B2 (en) | 2012-02-23 | 2013-02-21 | Method for manufacturing semiconductor device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012037818 | 2012-02-23 | ||
| JP2012037818 | 2012-02-23 | ||
| JP2013032113A JP6257900B2 (en) | 2012-02-23 | 2013-02-21 | Method for manufacturing semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013201430A JP2013201430A (en) | 2013-10-03 |
| JP2013201430A5 true JP2013201430A5 (en) | 2016-03-24 |
| JP6257900B2 JP6257900B2 (en) | 2018-01-10 |
Family
ID=49521366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013032113A Expired - Fee Related JP6257900B2 (en) | 2012-02-23 | 2013-02-21 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6257900B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10388738B2 (en) | 2016-04-01 | 2019-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Composite oxide semiconductor and method for manufacturing the same |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5537787B2 (en) * | 2008-09-01 | 2014-07-02 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| KR102503687B1 (en) * | 2009-07-03 | 2023-02-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Method for manufacturing semiconductor device |
| KR101642620B1 (en) * | 2009-07-10 | 2016-07-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and manufacturing method the same |
| CN103151266B (en) * | 2009-11-20 | 2016-08-03 | 株式会社半导体能源研究所 | The method being used for producing the semiconductor devices |
| JP5791934B2 (en) * | 2010-04-02 | 2015-10-07 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| KR101808198B1 (en) * | 2010-05-21 | 2017-12-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Method for manufacturing semiconductor device |
-
2013
- 2013-02-21 JP JP2013032113A patent/JP6257900B2/en not_active Expired - Fee Related
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