JP2013197425A - 炭化珪素基板の平坦化研削加工方法 - Google Patents
炭化珪素基板の平坦化研削加工方法 Download PDFInfo
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- JP2013197425A JP2013197425A JP2012064655A JP2012064655A JP2013197425A JP 2013197425 A JP2013197425 A JP 2013197425A JP 2012064655 A JP2012064655 A JP 2012064655A JP 2012064655 A JP2012064655 A JP 2012064655A JP 2013197425 A JP2013197425 A JP 2013197425A
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- substrate
- grinding
- sic substrate
- sic
- silicon carbide
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- 239000000758 substrate Substances 0.000 title claims abstract description 149
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 91
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000010432 diamond Substances 0.000 claims abstract description 19
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 19
- 239000000853 adhesive Substances 0.000 claims abstract description 18
- 230000001070 adhesive effect Effects 0.000 claims abstract description 18
- 229920001721 polyimide Polymers 0.000 claims abstract description 17
- 239000009719 polyimide resin Substances 0.000 claims abstract description 13
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 9
- 239000011147 inorganic material Substances 0.000 claims abstract description 9
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
- 239000010980 sapphire Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000003513 alkali Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 230000003746 surface roughness Effects 0.000 abstract description 8
- 239000002904 solvent Substances 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 23
- 239000004065 semiconductor Substances 0.000 description 20
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 13
- 239000010410 layer Substances 0.000 description 8
- 238000005498 polishing Methods 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 238000007665 sagging Methods 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- 241001050985 Disco Species 0.000 description 1
- 239000004831 Hot glue Substances 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 235000014443 Pyrus communis Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229920001646 UPILEX Polymers 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000010000 carbonizing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000007602 hot air drying Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
Landscapes
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012064655A JP2013197425A (ja) | 2012-03-22 | 2012-03-22 | 炭化珪素基板の平坦化研削加工方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012064655A JP2013197425A (ja) | 2012-03-22 | 2012-03-22 | 炭化珪素基板の平坦化研削加工方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013197425A true JP2013197425A (ja) | 2013-09-30 |
| JP2013197425A5 JP2013197425A5 (https=) | 2013-11-28 |
Family
ID=49395977
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012064655A Pending JP2013197425A (ja) | 2012-03-22 | 2012-03-22 | 炭化珪素基板の平坦化研削加工方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2013197425A (https=) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108735578A (zh) * | 2017-04-25 | 2018-11-02 | 株式会社迪思科 | SiC晶片的生成方法 |
| JPWO2021015057A1 (https=) * | 2019-07-25 | 2021-01-28 | ||
| CN114126859A (zh) * | 2019-07-25 | 2022-03-01 | Ａｇｃ株式会社 | 层叠构件 |
| JP2022075053A (ja) * | 2020-11-06 | 2022-05-18 | 住友金属鉱山株式会社 | 板状成形体の製造方法 |
| JP2022075054A (ja) * | 2020-11-06 | 2022-05-18 | 住友金属鉱山株式会社 | 板状成形体の製造方法 |
| CN115666932A (zh) * | 2020-06-10 | 2023-01-31 | Ａｇｃ株式会社 | 层叠部件 |
| CN116745251A (zh) * | 2021-01-20 | 2023-09-12 | Ａｇｃ株式会社 | 层叠部件和玻璃组合物 |
| TWI915315B (zh) | 2019-07-25 | 2026-02-21 | 日商Ａｇｃ股份有限公司 | 積層構件 |
| US12570571B2 (en) | 2020-06-10 | 2026-03-10 | AGC Inc. | Glass |
-
2012
- 2012-03-22 JP JP2012064655A patent/JP2013197425A/ja active Pending
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI748088B (zh) * | 2017-04-25 | 2021-12-01 | 日商迪思科股份有限公司 | SiC晶圓之生成方法 |
| KR20180119481A (ko) * | 2017-04-25 | 2018-11-02 | 가부시기가이샤 디스코 | SiC 웨이퍼의 생성 방법 |
| JP2018186153A (ja) * | 2017-04-25 | 2018-11-22 | 株式会社ディスコ | ウエーハの生成方法 |
| KR102450902B1 (ko) * | 2017-04-25 | 2022-10-04 | 가부시기가이샤 디스코 | SiC 웨이퍼의 생성 방법 |
| CN108735578A (zh) * | 2017-04-25 | 2018-11-02 | 株式会社迪思科 | SiC晶片的生成方法 |
| CN114127032A (zh) * | 2019-07-25 | 2022-03-01 | Ａｇｃ株式会社 | 层叠构件 |
| US11964450B2 (en) | 2019-07-25 | 2024-04-23 | AGC Inc. | Laminated member |
| CN114126859A (zh) * | 2019-07-25 | 2022-03-01 | Ａｇｃ株式会社 | 层叠构件 |
| WO2021015057A1 (ja) * | 2019-07-25 | 2021-01-28 | Ａｇｃ株式会社 | 積層部材 |
| TWI915315B (zh) | 2019-07-25 | 2026-02-21 | 日商Ａｇｃ股份有限公司 | 積層構件 |
| JPWO2021015057A1 (https=) * | 2019-07-25 | 2021-01-28 | ||
| JP7540440B2 (ja) | 2019-07-25 | 2024-08-27 | Ａｇｃ株式会社 | 積層部材 |
| TWI846902B (zh) * | 2019-07-25 | 2024-07-01 | 日商Ａｇｃ股份有限公司 | 積層構件 |
| CN114126859B (zh) * | 2019-07-25 | 2023-10-20 | Ａｇｃ株式会社 | 层叠构件 |
| US11958269B2 (en) | 2019-07-25 | 2024-04-16 | AGC Inc. | Laminated member |
| US12570571B2 (en) | 2020-06-10 | 2026-03-10 | AGC Inc. | Glass |
| US12434456B2 (en) | 2020-06-10 | 2025-10-07 | AGC Inc. | Laminated member |
| CN115666932A (zh) * | 2020-06-10 | 2023-01-31 | Ａｇｃ株式会社 | 层叠部件 |
| JP7589508B2 (ja) | 2020-11-06 | 2024-11-26 | 住友金属鉱山株式会社 | 板状成形体の製造方法 |
| JP7589507B2 (ja) | 2020-11-06 | 2024-11-26 | 住友金属鉱山株式会社 | 板状成形体の製造方法 |
| JP2022075054A (ja) * | 2020-11-06 | 2022-05-18 | 住友金属鉱山株式会社 | 板状成形体の製造方法 |
| JP2022075053A (ja) * | 2020-11-06 | 2022-05-18 | 住友金属鉱山株式会社 | 板状成形体の製造方法 |
| US12410105B2 (en) | 2021-01-20 | 2025-09-09 | AGC Inc. | Lamination member and glass composition |
| CN116745251A (zh) * | 2021-01-20 | 2023-09-12 | Ａｇｃ株式会社 | 层叠部件和玻璃组合物 |
| TWI922540B (zh) | 2021-01-20 | 2026-04-21 | 日商Ａｇｃ股份有限公司 | 積層構件 |
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| Date | Code | Title | Description |
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| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131015 |