JP2013181890A - 距離センサ及び距離画像センサ - Google Patents
距離センサ及び距離画像センサ Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 166
- 238000012546 transfer Methods 0.000 claims abstract description 49
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- 230000010363 phase shift Effects 0.000 claims description 6
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- 230000004048 modification Effects 0.000 description 29
- 238000012986 modification Methods 0.000 description 29
- 238000010586 diagram Methods 0.000 description 25
- 239000012535 impurity Substances 0.000 description 9
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- 238000009825 accumulation Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- 230000004044 response Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
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- 239000000463 material Substances 0.000 description 3
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
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- 230000008859 change Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/10—Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
- G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
- G01S7/4863—Detector arrays, e.g. charge-transfer gates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- Radar, Positioning & Navigation (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Networks & Wireless Communication (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Optical Radar Systems And Details Thereof (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Measurement Of Optical Distance (AREA)
Abstract
【解決手段】第一半導体領域FD1は、画素領域PA1の中心部で且つ電荷発生領域に囲まれるように電荷発生領域の内側に配置され、電荷発生領域からの信号電荷を収集する。第三半導体領域FD3は、画素領域PA1の角部で且つ電荷発生領域の外側に配置され、電荷発生領域からの不要電荷を収集する。フォトゲート電極PG1は、電荷発生領域の上に配置される。第一ゲート電極TX1は、第一半導体領域FD1と電荷発生領域との間に配置され、入力された信号に応じて電荷発生領域からの信号電荷を第一半導体領域FD1に流入させる。第三ゲート電極TX3は、第三半導体領域FD3と電荷発生領域との間に配置され、入力信号に応じて電荷発生領域からの不要電荷を第三半導体領域FD3に流入させる。
【選択図】図4
Description
図1は、測距装置の構成を示す説明図である。
パルス駆動信号SP:
V(t)=1(但し、0<t<(T/2)の場合)
V(t)=0(但し、(T/2)<t<Tの場合)
V(t+T)=V(t)
検出用ゲート信号S1:
V(t)=1(但し、0<t<(T/2)の場合)
V(t)=0(但し、(T/2)<t<Tの場合)
V(t+T)=V(t)
検出用ゲート信号S2(=S1の反転):
V(t)=0(但し、0<t<(T/2)の場合)
V(t)=1(但し、(T/2)<t<Tの場合)
V(t+T)=V(t)
半導体基板1Aの第一基板領域1Aa:厚さ5〜700μm/不純物濃度1×1018〜1020cm−3
半導体基板1Aの第二基板領域1Ab:厚さ3〜50μm/不純物濃度1×1013〜1016cm−3
第一及び第二半導体領域FD1,FD2:厚さ0.1〜0.4μm/不純物濃度1×1018〜1020cm−3
第三半導体領域FD3:厚さ0.1〜0.4μm/不純物濃度1×1018〜1020cm−3
ΔV=Q1/Cfd
ΔV=Q2/Cfd
したがって、第一及び第二半導体領域FD1,FD2の面積が低減されると、第一及び第二半導体領域FD1,FD2の静電容量(Cfd)も低減され、発生する電圧変化(ΔV)が大きくなる。すなわち、電荷電圧変換ゲインが高くなる。この結果、距離画像センサ1の高感度化を図ることができる。
Claims (9)
- 多角形状の画素領域の角部を除く前記画素領域の各辺まで外縁が延びており、入射光に応じて電荷が発生する電荷発生領域と、
前記画素領域の中心部で且つ前記電荷発生領域に囲まれるように前記電荷発生領域の内側に配置され、前記電荷発生領域からの信号電荷を収集する信号電荷収集領域と、
前記画素領域の角部で且つ前記電荷発生領域の外側に配置され、前記電荷発生領域からの不要電荷を収集する不要電荷収集領域と、
前記電荷発生領域の上に配置されるフォトゲート電極と、
前記信号電荷収集領域と前記電荷発生領域との間に配置され、入力された信号に応じて前記電荷発生領域からの信号電荷を前記信号電荷収集領域に流入させる転送電極と、
前記不要電荷収集領域と前記電荷発生領域との間に配置され、入力された信号に応じて前記電荷発生領域からの不要電荷を前記不要電荷収集領域に流入させる不要電荷収集ゲート電極と、を備えている、距離センサ。 - 隣り合う複数の前記画素領域を備えており、
前記複数の画素領域の前記電荷発生領域同士が、一体的に形成され、
前記複数の画素領域の前記フォトゲート電極同士が、一体的に形成されている、請求項1に記載の距離センサ。 - 前記複数の画素領域の前記不要電荷収集領域同士が、一体的に形成されている、請求項2に記載の距離センサ。
- 前記複数の画素領域の前記転送電極には、異なる位相の電荷転送信号がそれぞれ与えられる、請求項2又は3に記載の距離センサ。
- 前記転送電極には、所定のタイミンクで間欠的に位相シフトが与えられた電荷転送信号が与えられる、請求項1〜3のいずれか一項に記載の距離センサ。
- 前記信号電荷収集領域に蓄積された電荷量に対応する信号を読み出す読出回路が配置される領域が、前記画素領域の一辺に沿って前記画素領域の外側に位置している、請求項1〜5のいずれか一項に記載の距離センサ。
- 前記信号電荷収集領域に蓄積された電荷量に対応する信号を読み出す読出回路が配置される領域が、前記画素領域の一つの角部に位置している、請求項1〜5のいずれか一項に記載の距離センサ。
- 前記信号電荷収集領域は、平面視で矩形状であり、
前記転送電極は、略多角形環状を呈している、請求項1〜7のいずれか一項に記載の距離センサ。 - 一次元状又は二次元状に配置された複数のユニットからなる撮像領域を半導体基板上に備え、前記ユニットから出力される電荷量に基づいて、距離画像を得る距離画像センサであって、
前記ユニットそれぞれが、請求項1〜8のいずれか一項に記載の距離センサである、距離画像センサ。
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JP2012046844A JP5932400B2 (ja) | 2012-03-02 | 2012-03-02 | 距離センサ及び距離画像センサ |
US13/415,966 US9053998B2 (en) | 2012-03-02 | 2012-03-09 | Range sensor and range image sensor |
DE201211005967 DE112012005967T5 (de) | 2012-03-02 | 2012-11-13 | Bereichssensor und Bereichsbildsensor |
KR1020147021762A KR102028223B1 (ko) | 2012-03-02 | 2012-11-13 | 거리 센서 및 거리 화상 센서 |
PCT/JP2012/079415 WO2013128723A1 (ja) | 2012-03-02 | 2012-11-13 | 距離センサ及び距離画像センサ |
CH01304/14A CH708005B1 (de) | 2012-03-02 | 2012-11-13 | Bereichssensor und Bereichsbildsensor. |
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US (1) | US9053998B2 (ja) |
JP (1) | JP5932400B2 (ja) |
KR (1) | KR102028223B1 (ja) |
CH (1) | CH708005B1 (ja) |
DE (1) | DE112012005967T5 (ja) |
WO (1) | WO2013128723A1 (ja) |
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US10116925B1 (en) * | 2017-05-16 | 2018-10-30 | Samsung Electronics Co., Ltd. | Time-resolving sensor using shared PPD + SPAD pixel and spatial-temporal correlation for range measurement |
CN113614565B (zh) * | 2019-03-29 | 2024-03-08 | 凸版印刷株式会社 | 固体摄像装置、摄像系统及摄像方法 |
Citations (7)
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JP2004032682A (ja) * | 2002-04-08 | 2004-01-29 | Matsushita Electric Works Ltd | 強度変調光を用いた空間情報の検出装置 |
JP2009276243A (ja) * | 2008-05-15 | 2009-11-26 | Hamamatsu Photonics Kk | 距離センサ及び距離画像センサ |
JP2011112614A (ja) * | 2009-11-30 | 2011-06-09 | Hamamatsu Photonics Kk | 距離センサ及び距離画像センサ |
JP2011112382A (ja) * | 2009-11-24 | 2011-06-09 | Hamamatsu Photonics Kk | 距離センサ及び距離画像センサ |
JP2011133464A (ja) * | 2009-11-24 | 2011-07-07 | Hamamatsu Photonics Kk | 距離センサ及び距離画像センサ |
JP2011179926A (ja) * | 2010-02-26 | 2011-09-15 | Hamamatsu Photonics Kk | 距離画像センサ |
US20120038904A1 (en) * | 2010-08-11 | 2012-02-16 | Fossum Eric R | Unit pixel, photo-detection device and method of measuring a distance using the same |
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EP2304795A1 (en) | 2008-07-17 | 2011-04-06 | Microsoft International Holdings B.V. | Cmos photogate 3d camera system having improved charge sensing cell and pixel geometry |
JP6006514B2 (ja) | 2012-03-27 | 2016-10-12 | 浜松ホトニクス株式会社 | 距離センサ及び距離画像センサ |
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- 2012-03-02 JP JP2012046844A patent/JP5932400B2/ja active Active
- 2012-03-09 US US13/415,966 patent/US9053998B2/en active Active
- 2012-11-13 WO PCT/JP2012/079415 patent/WO2013128723A1/ja active Application Filing
- 2012-11-13 DE DE201211005967 patent/DE112012005967T5/de active Pending
- 2012-11-13 CH CH01304/14A patent/CH708005B1/de unknown
- 2012-11-13 KR KR1020147021762A patent/KR102028223B1/ko active IP Right Grant
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004032682A (ja) * | 2002-04-08 | 2004-01-29 | Matsushita Electric Works Ltd | 強度変調光を用いた空間情報の検出装置 |
JP2009276243A (ja) * | 2008-05-15 | 2009-11-26 | Hamamatsu Photonics Kk | 距離センサ及び距離画像センサ |
JP2011112382A (ja) * | 2009-11-24 | 2011-06-09 | Hamamatsu Photonics Kk | 距離センサ及び距離画像センサ |
JP2011133464A (ja) * | 2009-11-24 | 2011-07-07 | Hamamatsu Photonics Kk | 距離センサ及び距離画像センサ |
JP2011112614A (ja) * | 2009-11-30 | 2011-06-09 | Hamamatsu Photonics Kk | 距離センサ及び距離画像センサ |
JP2011179926A (ja) * | 2010-02-26 | 2011-09-15 | Hamamatsu Photonics Kk | 距離画像センサ |
US20120038904A1 (en) * | 2010-08-11 | 2012-02-16 | Fossum Eric R | Unit pixel, photo-detection device and method of measuring a distance using the same |
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Publication number | Publication date |
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WO2013128723A1 (ja) | 2013-09-06 |
KR20140138618A (ko) | 2014-12-04 |
CH708005B1 (de) | 2016-02-15 |
US20130228828A1 (en) | 2013-09-05 |
DE112012005967T5 (de) | 2014-11-13 |
US9053998B2 (en) | 2015-06-09 |
JP5932400B2 (ja) | 2016-06-08 |
KR102028223B1 (ko) | 2019-10-02 |
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