JP2013179283A - 半導体装置及び半導体装置の作製方法 - Google Patents
半導体装置及び半導体装置の作製方法 Download PDFInfo
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- JP2013179283A JP2013179283A JP2013016312A JP2013016312A JP2013179283A JP 2013179283 A JP2013179283 A JP 2013179283A JP 2013016312 A JP2013016312 A JP 2013016312A JP 2013016312 A JP2013016312 A JP 2013016312A JP 2013179283 A JP2013179283 A JP 2013179283A
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- insulating film
- oxide semiconductor
- oxygen
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Abstract
【解決手段】酸化物半導体膜、ゲート絶縁膜、及びゲート電極層が順に積層され、ゲート電極層の側面に、第1の側壁絶縁層、第2の側壁絶縁層、及び第3の側壁絶縁層を含む側壁絶縁層が設けられたトランジスタを有する半導体装置において、第1の側壁絶縁層はゲート絶縁膜の上面の一部、及びゲート電極層の側面と接し、第1の側壁絶縁層より酸素透過性の低い金属元素を含む絶縁膜を含む第2の側壁絶縁層は酸化物半導体膜の上面の一部、ゲート絶縁膜の側面、第1の側壁絶縁層の側面と接し、第3の側壁絶縁層は第2の側壁絶縁層の側面と接する。
【選択図】図1
Description
本実施の形態では、半導体装置及び半導体装置の作製方法の一形態を、図1乃至図4、及び図12を用いて説明する。本実施の形態では、半導体装置の一例として酸化物半導体膜を有するトランジスタを示す。
本実施の形態では、本明細書に示すトランジスタを使用し、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置の一例を、図面を用いて説明する。
本実施の形態においては、実施の形態1又は実施の形態2に示すトランジスタを使用し、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置について、実施の形態2に示した構成と異なる構成について、図6及び図7を用いて説明を行う。
本実施の形態では、先の実施の形態で示した半導体装置を携帯電話、スマートフォン、電子書籍などの携帯機器に応用した場合の例を図8乃至図11を用いて説明する。
Claims (14)
- 酸化物絶縁膜上に設けられたチャネル形成領域を含む酸化物半導体膜と、
前記酸化物半導体膜上にゲート絶縁膜と、
前記ゲート絶縁膜上にゲート電極層と、
前記ゲート絶縁膜の上面の一部、及び前記ゲート電極層の側面を覆う第1の側壁絶縁層と、
前記酸化物半導体膜の上面の一部、前記ゲート絶縁膜の側面、及び前記第1の側壁絶縁層の側面を覆う第2の側壁絶縁層と、
前記第2の側壁絶縁層の側面を覆う第3の側壁絶縁層と、
前記酸化物半導体膜と電気的に接続するソース電極層及びドレイン電極層とを有し、
前記第1の側壁絶縁層及び前記第3の側壁絶縁層は酸化物絶縁膜であり、
前記第2の側壁絶縁層は、前記第1の側壁絶縁層より酸素透過性の低い金属元素を含む絶縁膜であることを特徴とする半導体装置。 - 酸化物絶縁膜上に設けられたチャネル形成領域を含む酸化物半導体膜と、
前記酸化物半導体膜上にゲート絶縁膜と、
前記ゲート絶縁膜上にゲート電極層と、
前記ゲート電極層上に絶縁膜と、
前記ゲート絶縁膜の上面の一部、前記ゲート電極層の側面、及び前記絶縁膜の側面を覆う第1の側壁絶縁層と、
前記酸化物半導体膜の上面の一部、前記ゲート絶縁膜の側面、及び前記第1の側壁絶縁層の側面を覆う第2の側壁絶縁層と、
前記第2の側壁絶縁層の側面を覆う第3の側壁絶縁層と、
前記酸化物半導体膜と電気的に接続するソース電極層及びドレイン電極層とを有し、
前記第1の側壁絶縁層及び前記第3の側壁絶縁層は酸化物絶縁膜であり、
前記第2の側壁絶縁層及び前記絶縁膜は、前記第1の側壁絶縁層より酸素透過性の低い金属元素を含む絶縁膜であることを特徴とする半導体装置。 - 請求項2において、前記ゲート電極層と前記絶縁膜との間に酸素過剰領域を含む酸化物絶縁膜を有することを特徴とする半導体装置。
- 請求項1乃至3のいずれか一項において、前記金属元素を含む絶縁膜は酸化アルミニウム膜であることを特徴とする半導体装置。
- 請求項1乃至4のいずれか一項において、前記第1の側壁絶縁層は酸素過剰領域を含むことを特徴とする半導体装置。
- 請求項1乃至5のいずれか一項において、前記酸化物半導体膜において前記ゲート電極層と重ならない領域は、不純物元素を含むことを特徴とする半導体装置。
- 請求項1乃至6のいずれか一項において、前記ソース電極層及び前記ドレイン電極層は、前記酸化物半導体膜、及び前記第3の側壁絶縁層に接することを特徴とする半導体装置。
- 請求項1乃至7のいずれか一項において、前記第2の側壁絶縁層の膜厚は10nm以下であることを特徴とする半導体装置。
- 第1の酸化物絶縁膜を形成し、
前記第1の酸化物絶縁膜上に酸化物半導体膜を形成し、
前記酸化物半導体膜上に絶縁膜を形成し、
前記絶縁膜上に前記酸化物半導体膜と重なるゲート電極層を形成し、
前記ゲート電極層をマスクとして前記酸化物半導体膜に不純物元素を導入し、
前記絶縁膜及び前記ゲート電極層上に第2の酸化物絶縁膜を形成し、前記第2の酸化物絶縁膜をエッチングして前記ゲート電極層の側面を覆う第1の側壁絶縁層を形成し、
前記ゲート電極層及び第1の側壁絶縁層をマスクとして前記絶縁膜をエッチングしてゲート絶縁膜を形成し、
前記酸化物半導体膜、前記ゲート絶縁膜、及び前記第1の側壁絶縁層上に前記第1の側壁絶縁層より酸素透過性の低い金属元素を含む絶縁膜を形成し、
前記金属元素を含む絶縁膜上に第3の酸化物絶縁膜を形成し、
前記第3の酸化物絶縁膜をエッチングして、前記金属元素を含む絶縁膜を介して前記ゲート電極層の側面を覆う第3の側壁絶縁層を形成し、
前記ゲート電極層及び前記第3の側壁絶縁層をマスクとして前記金属元素を含む絶縁膜をエッチングして第2の側壁絶縁層を形成し、
前記酸化物半導体膜と電気的に接続するソース電極層及びドレイン電極層を形成することを特徴とする半導体装置の作製方法。 - 請求項9において、前記金属元素を含む絶縁膜として酸化アルミニウム膜を形成することを特徴とする半導体装置の作製方法。
- 請求項9において、前記金属元素を含む絶縁膜は、金属膜を形成し、前記金属膜に酸素ドープ処理を行うことによって形成することを特徴とする半導体装置の作製方法。
- 請求項9乃至11のいずれか一項において、前記ゲート電極層を形成後、前記ゲート電極層をマスクとして前記酸化物半導体膜に不純物元素を導入することを特徴とする半導体装置の作製方法。
- 請求項9乃至12のいずれか一項において、前記第2の酸化物絶縁膜、及び/又は前記第1の側壁絶縁層に酸素ドープ処理を行うことを特徴とする半導体装置の作製方法。
- 請求項9乃至13のいずれか一項において、前記第2の酸化物絶縁膜及び前記第3の酸化物絶縁膜を、化学気相成長法を用いて形成することを特徴とする半導体装置の作製方法。
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |