JP2013178961A - 荷電粒子線装置及び物品製造方法 - Google Patents

荷電粒子線装置及び物品製造方法 Download PDF

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Publication number
JP2013178961A
JP2013178961A JP2012042386A JP2012042386A JP2013178961A JP 2013178961 A JP2013178961 A JP 2013178961A JP 2012042386 A JP2012042386 A JP 2012042386A JP 2012042386 A JP2012042386 A JP 2012042386A JP 2013178961 A JP2013178961 A JP 2013178961A
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JP
Japan
Prior art keywords
charged particle
detector
particle beam
electron beam
incident
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012042386A
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English (en)
Japanese (ja)
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JP2013178961A5 (https=
Inventor
Takehiko Suzuki
武彦 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2012042386A priority Critical patent/JP2013178961A/ja
Priority to US13/772,419 priority patent/US8847180B2/en
Publication of JP2013178961A publication Critical patent/JP2013178961A/ja
Publication of JP2013178961A5 publication Critical patent/JP2013178961A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24535—Beam current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/30438—Registration

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2012042386A 2012-02-28 2012-02-28 荷電粒子線装置及び物品製造方法 Pending JP2013178961A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012042386A JP2013178961A (ja) 2012-02-28 2012-02-28 荷電粒子線装置及び物品製造方法
US13/772,419 US8847180B2 (en) 2012-02-28 2013-02-21 Charged particle beam apparatus, drawing apparatus, and method of manufacturing article

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012042386A JP2013178961A (ja) 2012-02-28 2012-02-28 荷電粒子線装置及び物品製造方法

Publications (2)

Publication Number Publication Date
JP2013178961A true JP2013178961A (ja) 2013-09-09
JP2013178961A5 JP2013178961A5 (https=) 2015-04-09

Family

ID=49003240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012042386A Pending JP2013178961A (ja) 2012-02-28 2012-02-28 荷電粒子線装置及び物品製造方法

Country Status (2)

Country Link
US (1) US8847180B2 (https=)
JP (1) JP2013178961A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014216631A (ja) * 2013-04-30 2014-11-17 キヤノン株式会社 描画装置、及び物品の製造方法
KR102395588B1 (ko) * 2017-09-18 2022-05-09 에이에스엠엘 네델란즈 비.브이. 필드 프로그램 가능한 검출기 어레이

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10289683A (ja) * 1997-04-14 1998-10-27 Nec Yamagata Ltd イオンビーム電流検出機構
JP2004055933A (ja) * 2002-07-22 2004-02-19 Advantest Corp 電子ビーム露光装置、及び電子ビーム計測モジュール
JP2004200549A (ja) * 2002-12-20 2004-07-15 Hitachi Ltd マルチ電子ビーム装置およびそれに用いられるマルチ電子ビーム電流の計測・表示方法
JP2005056923A (ja) * 2003-08-06 2005-03-03 Canon Inc マルチ荷電粒子線露光装置および方法ならびに該装置または方法を用いたデバイス製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6855929B2 (en) * 2000-12-01 2005-02-15 Ebara Corporation Apparatus for inspection with electron beam, method for operating same, and method for manufacturing semiconductor device using former
JP4048925B2 (ja) * 2002-11-18 2008-02-20 株式会社日立製作所 電子顕微鏡

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10289683A (ja) * 1997-04-14 1998-10-27 Nec Yamagata Ltd イオンビーム電流検出機構
JP2004055933A (ja) * 2002-07-22 2004-02-19 Advantest Corp 電子ビーム露光装置、及び電子ビーム計測モジュール
JP2004200549A (ja) * 2002-12-20 2004-07-15 Hitachi Ltd マルチ電子ビーム装置およびそれに用いられるマルチ電子ビーム電流の計測・表示方法
JP2005056923A (ja) * 2003-08-06 2005-03-03 Canon Inc マルチ荷電粒子線露光装置および方法ならびに該装置または方法を用いたデバイス製造方法

Also Published As

Publication number Publication date
US20130224662A1 (en) 2013-08-29
US8847180B2 (en) 2014-09-30

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