JP2013171840A - 多周波数ｒｆパルス出力のための、周波数改善インピーダンス依存電力制御 - Google Patents

多周波数ｒｆパルス出力のための、周波数改善インピーダンス依存電力制御 Download PDF

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JP2013171840A
JP2013171840A JP2013031820A JP2013031820A JP2013171840A JP 2013171840 A JP2013171840 A JP 2013171840A JP 2013031820 A JP2013031820 A JP 2013031820A JP 2013031820 A JP2013031820 A JP 2013031820A JP 2013171840 A JP2013171840 A JP 2013171840A
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frequency
signal
value
power source
power
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Japanese (ja)
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JP2013171840A5 (enExample
Inventor
C Valcore John Jr
ジョン・シー．・バルコア・ジュニア
J Lyndaker Bradford
ブラッドフォード・ジェイ．・リンデーカー
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H03H7/40—Automatic matching of load impedance to source impedance

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2013031820A 2012-02-22 2013-02-21 多周波数ｒｆパルス出力のための、周波数改善インピーダンス依存電力制御 Ceased JP2013171840A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201261602040P 2012-02-22 2012-02-22
US61/602,040 2012-02-22
US13/621,759 2012-09-17
US13/621,759 US9030101B2 (en) 2012-02-22 2012-09-17 Frequency enhanced impedance dependent power control for multi-frequency RF pulsing

Publications (2)

Publication Number Publication Date
JP2013171840A true JP2013171840A (ja) 2013-09-02
JP2013171840A5 JP2013171840A5 (enExample) 2016-03-31

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JP2013031820A Ceased JP2013171840A (ja) 2012-02-22 2013-02-21 多周波数ｒｆパルス出力のための、周波数改善インピーダンス依存電力制御

Country Status (6)

Country Link
US (2) US9030101B2 (enExample)
JP (1) JP2013171840A (enExample)
KR (1) KR20130096674A (enExample)
CN (2) CN105719933A (enExample)
SG (1) SG193086A1 (enExample)
TW (2) TW201729651A (enExample)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
JP2024544815A (ja) * 2021-12-09 2024-12-05 アプライド マテリアルズ インコーポレイテッド 製造システムにおけるマルチレベルｒｆパルス監視およびｒｆパルス化パラメータ最適化

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US9408288B2 (en) * 2012-09-14 2016-08-02 Lam Research Corporation Edge ramping
CN103730316B (zh) * 2012-10-16 2016-04-06 中微半导体设备(上海)有限公司 一种等离子处理方法及等离子处理装置
US9318304B2 (en) 2013-11-11 2016-04-19 Applied Materials, Inc. Frequency tuning for dual level radio frequency (RF) pulsing
CN104754850B (zh) * 2013-12-31 2019-11-05 中微半导体设备(上海)股份有限公司 一种电感耦合型等离子处理器
US9741539B2 (en) 2015-10-05 2017-08-22 Applied Materials, Inc. RF power delivery regulation for processing substrates
KR102799814B1 (ko) * 2016-03-04 2025-04-22 램 리써치 코포레이션 보다 저 주파수 rf 생성기의 기간 동안 보다 고 주파수 rf 생성기를 향하여 반사된 전력을 감소시키고 그리고 반사된 전력을 감소시키도록 관계를 사용하기 위한 시스템들 및 방법들
KR102874293B1 (ko) * 2016-04-13 2025-10-20 램 리써치 코포레이션 무선 주파수 값들을 사용함으로써 상태 전이들 동안 반사된 전력을 감소시키기 위한 시스템들 및 방법들
US9872373B1 (en) 2016-10-25 2018-01-16 Applied Materials, Inc. Smart multi-level RF pulsing methods
WO2018112463A1 (en) * 2016-12-16 2018-06-21 Applied Materials, Inc. Method to enable high temperature processing without chamber drifting
KR102475069B1 (ko) 2017-06-30 2022-12-06 삼성전자주식회사 반도체 제조 장치, 이의 동작 방법
GB2584146A (en) 2019-05-23 2020-11-25 Comet Ag Radio frequency generator
US11545341B2 (en) 2019-10-02 2023-01-03 Samsung Electronics Co., Ltd. Plasma etching method and semiconductor device fabrication method including the same
CN112992636B (zh) * 2019-12-17 2023-09-29 中微半导体设备(上海)股份有限公司 用于等离子体处理设备的射频功率源装置和射频功率分配方法
JP7544594B2 (ja) 2020-12-25 2024-09-03 株式会社ダイヘン 高周波電源システム
JP7691330B2 (ja) 2021-09-29 2025-06-11 株式会社ダイヘン インピーダンス整合器および高周波電源システム
JP7633133B2 (ja) 2021-09-30 2025-02-19 株式会社ダイヘン 高周波電源装置
JP2023097863A (ja) 2021-12-28 2023-07-10 株式会社ダイヘン 高周波電源システム
JP2023098203A (ja) 2021-12-28 2023-07-10 株式会社ダイヘン 高周波電源装置
JP7695880B2 (ja) 2021-12-28 2025-06-19 株式会社ダイヘン 高周波電源装置
JP7763099B2 (ja) 2021-12-28 2025-10-31 株式会社ダイヘン 高周波電源装置
JP2024095370A (ja) 2022-12-28 2024-07-10 株式会社ダイヘン 高周波電力供給システム
JP2024095373A (ja) 2022-12-28 2024-07-10 株式会社ダイヘン 高周波電力供給システム
JP2024095372A (ja) 2022-12-28 2024-07-10 株式会社ダイヘン 高周波電力供給システムの制御方法

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Publication number Priority date Publication date Assignee Title
JP2024544815A (ja) * 2021-12-09 2024-12-05 アプライド マテリアルズ インコーポレイテッド 製造システムにおけるマルチレベルｒｆパルス監視およびｒｆパルス化パラメータ最適化
JP7715919B2 (ja) 2021-12-09 2025-07-30 アプライド マテリアルズ インコーポレイテッド 製造システムにおけるマルチレベルｒｆパルス監視およびｒｆパルス化パラメータ最適化

Also Published As

Publication number Publication date
CN105719933A (zh) 2016-06-29
KR20130096674A (ko) 2013-08-30
TW201729651A (zh) 2017-08-16
SG193086A1 (en) 2013-09-30
CN103295865B (zh) 2016-04-13
US20130214682A1 (en) 2013-08-22
TW201415957A (zh) 2014-04-16
US9236228B2 (en) 2016-01-12
US20150214012A1 (en) 2015-07-30
CN103295865A (zh) 2013-09-11
US9030101B2 (en) 2015-05-12
TWI599270B (zh) 2017-09-11

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