JP2013168396A5 - - Google Patents

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Publication number
JP2013168396A5
JP2013168396A5 JP2012029107A JP2012029107A JP2013168396A5 JP 2013168396 A5 JP2013168396 A5 JP 2013168396A5 JP 2012029107 A JP2012029107 A JP 2012029107A JP 2012029107 A JP2012029107 A JP 2012029107A JP 2013168396 A5 JP2013168396 A5 JP 2013168396A5
Authority
JP
Japan
Prior art keywords
electrode
charged particle
particle beam
hole
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2012029107A
Other languages
English (en)
Japanese (ja)
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JP2013168396A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2012029107A priority Critical patent/JP2013168396A/ja
Priority claimed from JP2012029107A external-priority patent/JP2013168396A/ja
Priority to US13/744,536 priority patent/US8558191B2/en
Publication of JP2013168396A publication Critical patent/JP2013168396A/ja
Publication of JP2013168396A5 publication Critical patent/JP2013168396A5/ja
Abandoned legal-status Critical Current

Links

JP2012029107A 2012-02-14 2012-02-14 静電型の荷電粒子線レンズ及び荷電粒子線装置 Abandoned JP2013168396A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012029107A JP2013168396A (ja) 2012-02-14 2012-02-14 静電型の荷電粒子線レンズ及び荷電粒子線装置
US13/744,536 US8558191B2 (en) 2012-02-14 2013-01-18 Charged particle beam lens and charged particle beam exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012029107A JP2013168396A (ja) 2012-02-14 2012-02-14 静電型の荷電粒子線レンズ及び荷電粒子線装置

Publications (2)

Publication Number Publication Date
JP2013168396A JP2013168396A (ja) 2013-08-29
JP2013168396A5 true JP2013168396A5 (enExample) 2015-04-02

Family

ID=48944844

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012029107A Abandoned JP2013168396A (ja) 2012-02-14 2012-02-14 静電型の荷電粒子線レンズ及び荷電粒子線装置

Country Status (2)

Country Link
US (1) US8558191B2 (enExample)
JP (1) JP2013168396A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6500383B2 (ja) * 2014-10-03 2019-04-17 株式会社ニューフレアテクノロジー ブランキングアパーチャアレイ及び荷電粒子ビーム描画装置
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
DE102019109308A1 (de) 2019-04-09 2020-10-15 Tdk Electronics Ag Keramisches Bauelement und Verfahren zur Herstellung des keramischen Bauelements
WO2021045972A1 (en) 2019-09-03 2021-03-11 Tae Technologies, Inc. Systems, devices, and methods for contaminant resistant insulative structures
KR20230067619A (ko) * 2020-09-17 2023-05-16 에이에스엠엘 네델란즈 비.브이. 대물 렌즈 어레이 어셈블리, 전자-광학 시스템, 전자-광학 시스템 어레이, 포커싱 방법, 대물 렌즈 배열
EP4376048A1 (en) * 2022-11-23 2024-05-29 ASML Netherlands B.V. Charged particle optical device, assessment apparatus, method of assessing a sample
TW202441548A (zh) * 2022-11-23 2024-10-16 荷蘭商Ａｓｍｌ荷蘭公司 帶電粒子光學裝置、評估設備、評估樣本之方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4209698A (en) * 1971-12-28 1980-06-24 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. Transmission-type charged particle beam apparatus
DE3621045A1 (de) * 1985-06-24 1987-01-02 Nippon Telegraph & Telephone Strahlerzeugende vorrichtung
JP3166946B2 (ja) 1993-02-02 2001-05-14 日本電信電話株式会社 電子ビ―ム露光装置
JP4947841B2 (ja) * 2000-03-31 2012-06-06 キヤノン株式会社 荷電粒子線露光装置
KR20030028460A (ko) * 2000-04-04 2003-04-08 주식회사 아도반테스토 다축전자렌즈를 이용한 멀티 빔 노광 장치,다축전자렌즈의 제조방법, 반도체소자 제조방법
WO2001075947A1 (en) * 2000-04-04 2001-10-11 Advantest Corporation Multibeam exposure apparatus comprising multiaxis electron lens, multiaxis electron lens for focusing electron beams, and method for manufacturing semiconductor device
KR20020084288A (ko) * 2000-04-04 2002-11-04 주식회사 아도반테스토 다축전자렌즈를 이용한 멀티빔 노광장치, 반도체소자제조방법
JP4401614B2 (ja) * 2000-04-04 2010-01-20 株式会社アドバンテスト 多軸電子レンズを用いたマルチビーム露光装置、複数の電子ビームを集束する多軸電子レンズ、半導体素子製造方法
KR20030028461A (ko) * 2000-04-04 2003-04-08 주식회사 아도반테스토 다축전자렌즈를 이용한 멀티빔 노광장치, 반도체소자제조방법
US6787780B2 (en) * 2000-04-04 2004-09-07 Advantest Corporation Multi-beam exposure apparatus using a multi-axis electron lens, fabrication method of a semiconductor device
US7420164B2 (en) * 2004-05-26 2008-09-02 Ebara Corporation Objective lens, electron beam system and method of inspecting defect
JP5222142B2 (ja) * 2005-09-06 2013-06-26 カール・ツァイス・エスエムティー・ゲーエムベーハー 粒子光学部品
US7883839B2 (en) * 2005-12-08 2011-02-08 University Of Houston Method and apparatus for nano-pantography
US8134135B2 (en) * 2006-07-25 2012-03-13 Mapper Lithography Ip B.V. Multiple beam charged particle optical system
US8294351B2 (en) * 2008-03-04 2012-10-23 Panasonic Corporation Matrix-type cold-cathode electron source device
CN102232237B (zh) * 2008-10-01 2014-09-24 迈普尔平版印刷Ip有限公司 静电透镜构件
DE102008062450B4 (de) * 2008-12-13 2012-05-03 Vistec Electron Beam Gmbh Anordnung zur Beleuchtung eines Substrats mit mehreren individuell geformten Partikelstrahlen zur hochauflösenden Lithographie von Strukturmustern
US8362441B2 (en) * 2009-10-09 2013-01-29 Mapper Lithography Ip B.V. Enhanced integrity projection lens assembly

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