JP2013168396A - 静電型の荷電粒子線レンズ及び荷電粒子線装置 - Google Patents

静電型の荷電粒子線レンズ及び荷電粒子線装置 Download PDF

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Publication number
JP2013168396A
JP2013168396A JP2012029107A JP2012029107A JP2013168396A JP 2013168396 A JP2013168396 A JP 2013168396A JP 2012029107 A JP2012029107 A JP 2012029107A JP 2012029107 A JP2012029107 A JP 2012029107A JP 2013168396 A JP2013168396 A JP 2013168396A
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JP
Japan
Prior art keywords
electrode
charged particle
lens
particle beam
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2012029107A
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English (en)
Japanese (ja)
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JP2013168396A5 (enExample
Inventor
Akira Shimazu
晃 島津
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2012029107A priority Critical patent/JP2013168396A/ja
Priority to US13/744,536 priority patent/US8558191B2/en
Publication of JP2013168396A publication Critical patent/JP2013168396A/ja
Publication of JP2013168396A5 publication Critical patent/JP2013168396A5/ja
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/14—Arrangements for focusing or reflecting ray or beam
    • H01J3/18—Electrostatic lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1205—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
JP2012029107A 2012-02-14 2012-02-14 静電型の荷電粒子線レンズ及び荷電粒子線装置 Abandoned JP2013168396A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012029107A JP2013168396A (ja) 2012-02-14 2012-02-14 静電型の荷電粒子線レンズ及び荷電粒子線装置
US13/744,536 US8558191B2 (en) 2012-02-14 2013-01-18 Charged particle beam lens and charged particle beam exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012029107A JP2013168396A (ja) 2012-02-14 2012-02-14 静電型の荷電粒子線レンズ及び荷電粒子線装置

Publications (2)

Publication Number Publication Date
JP2013168396A true JP2013168396A (ja) 2013-08-29
JP2013168396A5 JP2013168396A5 (enExample) 2015-04-02

Family

ID=48944844

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012029107A Abandoned JP2013168396A (ja) 2012-02-14 2012-02-14 静電型の荷電粒子線レンズ及び荷電粒子線装置

Country Status (2)

Country Link
US (1) US8558191B2 (enExample)
JP (1) JP2013168396A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180132884A (ko) * 2016-04-21 2018-12-12 마퍼 리쏘그라피 아이피 비.브이. 대전 입자 빔 시스템들에서의 오염의 제거 및/또는 회피를 위한 방법 및 시스템
JP2023541371A (ja) * 2020-09-17 2023-10-02 エーエスエムエル ネザーランズ ビー．ブイ． 対物レンズアレイアセンブリ、電子光学系、電子光学系アレイ、集束方法、対物レンズ構成
US11916236B2 (en) 2019-04-09 2024-02-27 Tdk Electronics Ag Ceramic component and method for manufacturing the ceramic component

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6500383B2 (ja) * 2014-10-03 2019-04-17 株式会社ニューフレアテクノロジー ブランキングアパーチャアレイ及び荷電粒子ビーム描画装置
WO2021045972A1 (en) 2019-09-03 2021-03-11 Tae Technologies, Inc. Systems, devices, and methods for contaminant resistant insulative structures
TW202441548A (zh) * 2022-11-23 2024-10-16 荷蘭商Ａｓｍｌ荷蘭公司 帶電粒子光學裝置、評估設備、評估樣本之方法
EP4376048A1 (en) * 2022-11-23 2024-05-29 ASML Netherlands B.V. Charged particle optical device, assessment apparatus, method of assessing a sample

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US4209698A (en) * 1971-12-28 1980-06-24 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. Transmission-type charged particle beam apparatus
DE3621045A1 (de) * 1985-06-24 1987-01-02 Nippon Telegraph & Telephone Strahlerzeugende vorrichtung
JP3166946B2 (ja) 1993-02-02 2001-05-14 日本電信電話株式会社 電子ビ―ム露光装置
JP4947841B2 (ja) * 2000-03-31 2012-06-06 キヤノン株式会社 荷電粒子線露光装置
KR20020084288A (ko) * 2000-04-04 2002-11-04 주식회사 아도반테스토 다축전자렌즈를 이용한 멀티빔 노광장치, 반도체소자제조방법
US6787780B2 (en) * 2000-04-04 2004-09-07 Advantest Corporation Multi-beam exposure apparatus using a multi-axis electron lens, fabrication method of a semiconductor device
WO2001075947A1 (en) * 2000-04-04 2001-10-11 Advantest Corporation Multibeam exposure apparatus comprising multiaxis electron lens, multiaxis electron lens for focusing electron beams, and method for manufacturing semiconductor device
WO2001075948A1 (en) * 2000-04-04 2001-10-11 Advantest Corporation Multibeam exposure apparatus comprising multiaxis electron lens, multiaxis electron lens for focusing electron beams, and method for manufacturing semiconductor device
WO2001075951A1 (en) * 2000-04-04 2001-10-11 Advantest Corporation Multibeam exposure apparatus comprising multiaxis electron lens and method for manufacturing semiconductor device
KR20030028460A (ko) * 2000-04-04 2003-04-08 주식회사 아도반테스토 다축전자렌즈를 이용한 멀티 빔 노광 장치,다축전자렌즈의 제조방법, 반도체소자 제조방법
US7420164B2 (en) * 2004-05-26 2008-09-02 Ebara Corporation Objective lens, electron beam system and method of inspecting defect
EP2267751A3 (en) * 2005-09-06 2011-01-05 Carl Zeiss SMT AG Particle-optical component
US7883839B2 (en) * 2005-12-08 2011-02-08 University Of Houston Method and apparatus for nano-pantography
US8134135B2 (en) * 2006-07-25 2012-03-13 Mapper Lithography Ip B.V. Multiple beam charged particle optical system
US8294351B2 (en) * 2008-03-04 2012-10-23 Panasonic Corporation Matrix-type cold-cathode electron source device
CN102232237B (zh) * 2008-10-01 2014-09-24 迈普尔平版印刷Ip有限公司 静电透镜构件
DE102008062450B4 (de) * 2008-12-13 2012-05-03 Vistec Electron Beam Gmbh Anordnung zur Beleuchtung eines Substrats mit mehreren individuell geformten Partikelstrahlen zur hochauflösenden Lithographie von Strukturmustern
US8362441B2 (en) * 2009-10-09 2013-01-29 Mapper Lithography Ip B.V. Enhanced integrity projection lens assembly

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180132884A (ko) * 2016-04-21 2018-12-12 마퍼 리쏘그라피 아이피 비.브이. 대전 입자 빔 시스템들에서의 오염의 제거 및/또는 회피를 위한 방법 및 시스템
JP2019507951A (ja) * 2016-04-21 2019-03-22 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子ビームシステムにおける汚染の除去及び／又は回避のための方法及びシステム
US10632509B2 (en) 2016-04-21 2020-04-28 Asml Netherlands B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
US10987705B2 (en) 2016-04-21 2021-04-27 Asml Netherlands B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
JP7065027B2 (ja) 2016-04-21 2022-05-11 エーエスエムエル ネザーランズ ビー．ブイ． 荷電粒子ビームシステムにおける汚染の除去及び／又は回避のための方法及びシステム
KR102501182B1 (ko) * 2016-04-21 2023-02-20 에이에스엠엘 네델란즈 비.브이. 대전 입자 빔 시스템들에서의 오염의 제거 및/또는 회피를 위한 방법 및 시스템
KR20230027325A (ko) * 2016-04-21 2023-02-27 에이에스엠엘 네델란즈 비.브이. 대전 입자 빔 시스템들에서의 오염의 제거 및/또는 회피를 위한 방법 및 시스템
US11738376B2 (en) 2016-04-21 2023-08-29 Asml Netherlands, B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
KR102626796B1 (ko) 2016-04-21 2024-01-19 에이에스엠엘 네델란즈 비.브이. 대전 입자 빔 시스템들에서의 오염의 제거 및/또는 회피를 위한 방법 및 시스템
US12202019B2 (en) 2016-04-21 2025-01-21 Asml Netherlands B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
US11916236B2 (en) 2019-04-09 2024-02-27 Tdk Electronics Ag Ceramic component and method for manufacturing the ceramic component
JP2023541371A (ja) * 2020-09-17 2023-10-02 エーエスエムエル ネザーランズ ビー．ブイ． 対物レンズアレイアセンブリ、電子光学系、電子光学系アレイ、集束方法、対物レンズ構成

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US20130206999A1 (en) 2013-08-15
US8558191B2 (en) 2013-10-15

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