JP2013161912A5 - - Google Patents
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- Publication number
- JP2013161912A5 JP2013161912A5 JP2012021990A JP2012021990A JP2013161912A5 JP 2013161912 A5 JP2013161912 A5 JP 2013161912A5 JP 2012021990 A JP2012021990 A JP 2012021990A JP 2012021990 A JP2012021990 A JP 2012021990A JP 2013161912 A5 JP2013161912 A5 JP 2013161912A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- processing
- plasma
- substrate
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000007789 gas Substances 0.000 claims 37
- 239000000758 substrate Substances 0.000 claims 19
- 239000001257 hydrogen Substances 0.000 claims 17
- 229910052739 hydrogen Inorganic materials 0.000 claims 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 12
- 229910052760 oxygen Inorganic materials 0.000 claims 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 11
- 239000001301 oxygen Substances 0.000 claims 11
- 238000004519 manufacturing process Methods 0.000 claims 7
- 239000004065 semiconductor Substances 0.000 claims 7
- 229910052757 nitrogen Inorganic materials 0.000 claims 6
- 238000000034 method Methods 0.000 claims 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012021990A JP5848626B2 (ja) | 2012-02-03 | 2012-02-03 | 半導体装置の製造方法及び基板処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012021990A JP5848626B2 (ja) | 2012-02-03 | 2012-02-03 | 半導体装置の製造方法及び基板処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013161912A JP2013161912A (ja) | 2013-08-19 |
| JP2013161912A5 true JP2013161912A5 (https=) | 2015-03-19 |
| JP5848626B2 JP5848626B2 (ja) | 2016-01-27 |
Family
ID=49173934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012021990A Active JP5848626B2 (ja) | 2012-02-03 | 2012-02-03 | 半導体装置の製造方法及び基板処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5848626B2 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6579953B2 (ja) * | 2012-07-16 | 2019-09-25 | マットソン テクノロジー インコーポレイテッドＭａｔｔｓｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． | 純還元性プラズマ中で高アスペクト比のフォトレジストを除去する方法 |
| KR101873804B1 (ko) * | 2016-04-12 | 2018-07-03 | 피에스케이 주식회사 | 기판 처리 장치 및 방법 |
| JP6902941B2 (ja) | 2017-06-29 | 2021-07-14 | 東京エレクトロン株式会社 | プラズマ処理方法およびプラズマ処理装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6849559B2 (en) * | 2002-04-16 | 2005-02-01 | Tokyo Electron Limited | Method for removing photoresist and etch residues |
| KR100989974B1 (ko) * | 2005-02-02 | 2010-10-26 | 도쿄엘렉트론가부시키가이샤 | 클리닝 방법 및 플라즈마 처리 방법 |
| JP2010050310A (ja) * | 2008-08-22 | 2010-03-04 | Fujitsu Microelectronics Ltd | 半導体装置の製造方法 |
| JPWO2010084909A1 (ja) * | 2009-01-21 | 2012-07-19 | キヤノンアネルバ株式会社 | 磁性膜加工チャンバのクリーニング方法、磁性素子の製造方法、および基板処理装置 |
-
2012
- 2012-02-03 JP JP2012021990A patent/JP5848626B2/ja active Active
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