JP2013140975A5 - - Google Patents
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- Publication number
- JP2013140975A5 JP2013140975A5 JP2012283969A JP2012283969A JP2013140975A5 JP 2013140975 A5 JP2013140975 A5 JP 2013140975A5 JP 2012283969 A JP2012283969 A JP 2012283969A JP 2012283969 A JP2012283969 A JP 2012283969A JP 2013140975 A5 JP2013140975 A5 JP 2013140975A5
- Authority
- JP
- Japan
- Prior art keywords
- photodiode array
- epitaxial layer
- conductive vias
- doped
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 11
- 229910052710 silicon Inorganic materials 0.000 claims 11
- 239000010703 silicon Substances 0.000 claims 11
- 239000000758 substrate Substances 0.000 claims 9
- 239000000463 material Substances 0.000 claims 6
- 239000012535 impurity Substances 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 230000000295 complement effect Effects 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 239000000945 filler Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 241000047703 Nonion Species 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 238000007781 pre-processing Methods 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/343,165 | 2012-01-04 | ||
| US13/343,165 US8736008B2 (en) | 2012-01-04 | 2012-01-04 | Photodiode array and methods of fabrication |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013140975A JP2013140975A (ja) | 2013-07-18 |
| JP2013140975A5 true JP2013140975A5 (https=) | 2016-02-12 |
| JP6133055B2 JP6133055B2 (ja) | 2017-05-24 |
Family
ID=48608049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012283969A Active JP6133055B2 (ja) | 2012-01-04 | 2012-12-27 | フォトダイオード・アレイ、検出器及び製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8736008B2 (https=) |
| JP (1) | JP6133055B2 (https=) |
| DE (1) | DE102012113168A1 (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8901697B2 (en) * | 2012-03-16 | 2014-12-02 | Analog Devices, Inc. | Integrated circuit having a semiconducting via; an integrated circuit including a sensor, such as a photosensitive device, and a method of making said integrated circuit |
| DE102013206407B3 (de) * | 2013-04-11 | 2014-03-06 | Siemens Aktiengesellschaft | Sensorchip, computertomographischer Detektor diesen aufweisend und Herstellungsverfahren dafür |
| CN105723243B (zh) | 2013-11-15 | 2019-07-09 | 皇家飞利浦有限公司 | 柔性基底上的双面有机光探测器 |
| JP2015133408A (ja) | 2014-01-14 | 2015-07-23 | 株式会社島津製作所 | 放射線検出器 |
| TWI621254B (zh) * | 2014-12-19 | 2018-04-11 | G-Ray Switzerland Sa | 單片ｃｍｏｓ積體像素偵測器、及包括各種應用之粒子偵測和成像的系統與方法 |
| US9754992B2 (en) | 2015-01-21 | 2017-09-05 | Terapede Systems Inc. | Integrated scintillator grid with photodiodes |
| JP6725231B2 (ja) * | 2015-10-06 | 2020-07-15 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子、および電子装置 |
| US10522532B2 (en) * | 2016-05-27 | 2019-12-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Through via extending through a group III-V layer |
| WO2017213622A1 (en) * | 2016-06-06 | 2017-12-14 | Terapede Systems Inc. | Integrated scintillator grid with photodiodes |
| KR102635858B1 (ko) * | 2017-01-05 | 2024-02-15 | 삼성전자주식회사 | 이미지 센서 |
| EP3723138A1 (en) | 2019-04-10 | 2020-10-14 | ams International AG | Optoelectronic device, photonic detector and method of producing an optoelectronic device |
| US11874409B2 (en) | 2020-07-06 | 2024-01-16 | Canon Medical Systems Corporation | Correction X-ray detector, X-ray CT apparatus, and detector element determining method |
| CN120419317A (zh) * | 2022-12-30 | 2025-08-01 | 上海联影医疗科技股份有限公司 | 用于探测辐射射线的光子计数探测器 |
| WO2025036368A1 (zh) * | 2023-08-16 | 2025-02-20 | 上海联影微电子科技有限公司 | 光电二极管及其制造方法、电子元件 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5886353A (en) | 1995-04-21 | 1999-03-23 | Thermotrex Corporation | Imaging device |
| US6133615A (en) * | 1998-04-13 | 2000-10-17 | Wisconsin Alumni Research Foundation | Photodiode arrays having minimized cross-talk between diodes |
| US6667528B2 (en) * | 2002-01-03 | 2003-12-23 | International Business Machines Corporation | Semiconductor-on-insulator lateral p-i-n photodetector with a reflecting mirror and backside contact and method for forming the same |
| GB0201260D0 (en) | 2002-01-21 | 2002-03-06 | Europ Org For Nuclear Research | A sensing and imaging device |
| US7291782B2 (en) * | 2002-06-22 | 2007-11-06 | Nanosolar, Inc. | Optoelectronic device and fabrication method |
| GB2392307B8 (en) * | 2002-07-26 | 2006-09-20 | Detection Technology Oy | Semiconductor structure for imaging detectors |
| JP4440554B2 (ja) * | 2002-09-24 | 2010-03-24 | 浜松ホトニクス株式会社 | 半導体装置 |
| US7214999B2 (en) * | 2003-10-31 | 2007-05-08 | Motorola, Inc. | Integrated photoserver for CMOS imagers |
| US6943409B1 (en) * | 2004-05-24 | 2005-09-13 | International Business Machines Corporation | Trench optical device |
| KR101260981B1 (ko) | 2004-06-04 | 2013-05-10 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 인쇄가능한 반도체소자들의 제조 및 조립방법과 장치 |
| RU2384866C2 (ru) | 2005-04-22 | 2010-03-20 | Конинклейке Филипс Электроникс Н.В. | Сканер позитронно-эмиссионной томографии и магнитно-резонансной визуализации со способностью определения времени полета |
| DE102005026242B4 (de) * | 2005-06-07 | 2007-05-03 | Austriamicrosystems Ag | Photodiode mit integrierter Halbleiterschaltung und Verfahren zur Herstellung |
| US7759680B2 (en) | 2005-11-30 | 2010-07-20 | General Electric Company | Thin-film transistor and diode array for an imager panel or the like |
| US7576404B2 (en) * | 2005-12-16 | 2009-08-18 | Icemos Technology Ltd. | Backlit photodiode and method of manufacturing a backlit photodiode |
| US7378309B2 (en) * | 2006-03-15 | 2008-05-27 | Sharp Laboratories Of America, Inc. | Method of fabricating local interconnects on a silicon-germanium 3D CMOS |
| JP5437791B2 (ja) | 2006-04-25 | 2014-03-12 | コーニンクレッカ フィリップス エヌ ヴェ | （Ｂｉ）ＣＭＯＳプロセスによるアバランシェフォトダイオードの製造方法 |
| TW200818534A (en) * | 2006-08-10 | 2008-04-16 | Icemos Technology Corp | Method of manufacturing a photodiode array with through-wafer vias |
| GB2441814B (en) | 2006-09-07 | 2012-04-11 | Detection Technology Oy | Photodiode array output signal multiplexing |
| MY149292A (en) | 2007-01-17 | 2013-08-30 | Univ Illinois | Optical systems fabricated by printing-based assembly |
| JP4825778B2 (ja) * | 2007-11-16 | 2011-11-30 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
| ITTO20080045A1 (it) | 2008-01-18 | 2009-07-19 | St Microelectronics Srl | Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione |
| US20100108893A1 (en) * | 2008-11-04 | 2010-05-06 | Array Optronix, Inc. | Devices and Methods for Ultra Thin Photodiode Arrays on Bonded Supports |
| WO2010073137A1 (en) | 2008-12-22 | 2010-07-01 | Koninklijke Philips Electronics N.V. | Cmos imager with single photon counting capability |
| US8409908B2 (en) | 2009-07-30 | 2013-04-02 | General Electric Company | Apparatus for reducing photodiode thermal gain coefficient and method of making same |
| US20110042576A1 (en) * | 2009-08-20 | 2011-02-24 | Icemos Technology Ltd. | Direct wafer-bonded through-hole photodiode |
| CN103081128B (zh) | 2010-06-18 | 2016-11-02 | 西奥尼克斯公司 | 高速光敏设备及相关方法 |
| US9097809B2 (en) | 2011-06-30 | 2015-08-04 | Carestream Health, Inc. | Radiographic detector including trap occupancy change monitor and feedback, imaging apparatus and methods using the same |
-
2012
- 2012-01-04 US US13/343,165 patent/US8736008B2/en active Active
- 2012-12-27 JP JP2012283969A patent/JP6133055B2/ja active Active
- 2012-12-28 DE DE102012113168A patent/DE102012113168A1/de not_active Withdrawn
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