JP2013114441A5 - - Google Patents

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Publication number
JP2013114441A5
JP2013114441A5 JP2011259796A JP2011259796A JP2013114441A5 JP 2013114441 A5 JP2013114441 A5 JP 2013114441A5 JP 2011259796 A JP2011259796 A JP 2011259796A JP 2011259796 A JP2011259796 A JP 2011259796A JP 2013114441 A5 JP2013114441 A5 JP 2013114441A5
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JP
Japan
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data
cache
cache line
standby state
nonvolatile
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JP2011259796A
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English (en)
Japanese (ja)
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JP5803614B2 (ja
JP2013114441A (ja
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Priority to JP2011259796A priority Critical patent/JP5803614B2/ja
Priority claimed from JP2011259796A external-priority patent/JP5803614B2/ja
Priority to US13/681,999 priority patent/US9251057B2/en
Priority to CN201210479284.8A priority patent/CN103136119B/zh
Publication of JP2013114441A publication Critical patent/JP2013114441A/ja
Publication of JP2013114441A5 publication Critical patent/JP2013114441A5/ja
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Publication of JP5803614B2 publication Critical patent/JP5803614B2/ja
Expired - Fee Related legal-status Critical Current
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JP2011259796A 2011-11-29 2011-11-29 不揮発性キャッシュメモリ、不揮発性キャッシュメモリの処理方法、コンピュータシステム Expired - Fee Related JP5803614B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011259796A JP5803614B2 (ja) 2011-11-29 2011-11-29 不揮発性キャッシュメモリ、不揮発性キャッシュメモリの処理方法、コンピュータシステム
US13/681,999 US9251057B2 (en) 2011-11-29 2012-11-20 Nonvolatile cache memory, processing method of nonvolatile cache memory, and computer system
CN201210479284.8A CN103136119B (zh) 2011-11-29 2012-11-22 非易失性高速缓冲存储器、其处理方法以及计算机系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011259796A JP5803614B2 (ja) 2011-11-29 2011-11-29 不揮発性キャッシュメモリ、不揮発性キャッシュメモリの処理方法、コンピュータシステム

Publications (3)

Publication Number Publication Date
JP2013114441A JP2013114441A (ja) 2013-06-10
JP2013114441A5 true JP2013114441A5 (https=) 2014-11-20
JP5803614B2 JP5803614B2 (ja) 2015-11-04

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JP2011259796A Expired - Fee Related JP5803614B2 (ja) 2011-11-29 2011-11-29 不揮発性キャッシュメモリ、不揮発性キャッシュメモリの処理方法、コンピュータシステム

Country Status (3)

Country Link
US (1) US9251057B2 (https=)
JP (1) JP5803614B2 (https=)
CN (1) CN103136119B (https=)

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JP6275427B2 (ja) * 2013-09-06 2018-02-07 株式会社東芝 メモリ制御回路およびキャッシュメモリ
WO2015057828A1 (en) * 2013-10-15 2015-04-23 Mill Computing, Inc. Computer processor employing cache memory storing backless cache lines
CN104808765B (zh) * 2014-01-27 2018-01-23 联想(北京)有限公司 一种信息处理方法以及电子设备
JP6030085B2 (ja) * 2014-03-20 2016-11-24 株式会社東芝 キャッシュメモリおよびプロセッサシステム
US9042160B1 (en) * 2014-07-03 2015-05-26 Sandisk Technologies Inc. Memory device with resistive random access memory (ReRAM)
US9105333B1 (en) * 2014-07-03 2015-08-11 Sandisk Technologies Inc. On-chip copying of data between NAND flash memory and ReRAM of a memory die
KR102131337B1 (ko) * 2014-10-20 2020-07-07 한국전자통신연구원 고장 제어 기능을 구비한 캐시 메모리
US9349952B1 (en) 2014-12-08 2016-05-24 Sony Corporation Methods for fabricating a memory device with an enlarged space between neighboring bottom electrodes
CN108027710B (zh) * 2015-12-03 2020-11-06 株式会社日立制作所 在软件定义的存储系统中进行高速缓存的方法和装置
US10761819B2 (en) * 2016-02-23 2020-09-01 Intel Corporation Optimizing structures to fit into a complete cache line
CN105677258A (zh) * 2016-02-23 2016-06-15 浪潮(北京)电子信息产业有限公司 一种日志数据管理方法及系统
US10262721B2 (en) 2016-03-10 2019-04-16 Micron Technology, Inc. Apparatuses and methods for cache invalidate
CN106406767A (zh) * 2016-09-26 2017-02-15 上海新储集成电路有限公司 一种非易失性双列直插式存储器及存储方法
US10289551B2 (en) * 2017-05-11 2019-05-14 Western Digital Technologies, Inc. Preserving data upon a power shutdown
KR20200004119A (ko) * 2018-07-03 2020-01-13 에스케이하이닉스 주식회사 메모리 시스템 및 그의 동작 방법
US10447278B1 (en) 2018-07-17 2019-10-15 Northrop Grumman Systems Corporation JTL-based superconducting logic arrays and FPGAs
US10818346B2 (en) 2018-09-17 2020-10-27 Northrop Grumman Systems Corporation Quantizing loop memory cell system
US11211117B2 (en) 2019-01-24 2021-12-28 Northrop Grumman Systems Corporation Ferrimagnetic/ferromagnetic exchange bilayers for use as a fixed magnetic layer in a superconducting-based memory device
US11024791B1 (en) 2020-01-27 2021-06-01 Northrop Grumman Systems Corporation Magnetically stabilized magnetic Josephson junction memory cell
US12027196B2 (en) 2021-07-08 2024-07-02 Kioxia Corporation Memory system, control method, and power control circuit
TWI816285B (zh) * 2021-07-08 2023-09-21 日商鎧俠股份有限公司 記憶體系統、控制方法及電力控制電路

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JP5170706B2 (ja) 2007-08-31 2013-03-27 国立大学法人東京工業大学 スピン注入磁化反転ｍｔｊを用いた不揮発性ｓｒａｍ／ラッチ回路
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