JP2013098193A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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Abstract
【解決手段】チャンバと、該チャンバ内に配設され被処理ウエハが載置されるチャックと、前記チャックの周縁部に前記ウエハの載置位置を囲うように配設されたフォーカスリングと、前記ウエハの径方向の位置に応じて異なる種類のガスを供給可能なガス供給機構とを備えたプラズマエッチング装置を用いて前記ウエハからなる半導体装置を製造する製造方法であって、有機膜が形成されたウエハを前記チャック上に載置し、前記処理ガス供給機構から、前記ウエハの有機膜をエッチングするエッチングガスを前記ウエハの中央部に導入し、前記処理ガス供給機構から、前記エッチングガスと反応する性質を有するエッチング阻害因子ガスを前記ウエハの周縁部に導入し、前記エッチングガスを用いて前記ウエハをプラズマエッチングすることを特徴とする。
【選択図】図3B
Description
有機膜をエッチングするプラズマエッチングにおいては、ウエハ周縁部のエッチングレートが同中央部よりも大きくなることが知られている。これは、フォーカスリング上のOラジカルがウエハ周縁部のエッチングに寄与してしまうためと考えられ、ウエハとフォーカスリングの材質の違いに起因している。ウエハ面内でのエッチングレートの不均一は、多層レジストマスクの最下層にある有機膜の側壁部に生ずるボーイングやアンダーカットを生む原因となってしまう。
ところで、有機膜エッチングにおいては、処理ガスに酸素や希ガスを添加することで形状制御が可能となる。また、フッ化性ガス濃度を高くすると、側壁部のエッチング形状が良好になることが知られている。そこで、ウエハ周縁部においてO2ガスの流量を抑え、ウエハ中央部においてO2ガス流量を増やす方法が考えられる。
実施形態のプラズマエッチングでは、ウエハ周縁部において余剰のOラジカルを取り除く効果(スカベンジ効果)をもつ処理ガスを、ウエハ周縁部に供給している。すなわち、ウエハ周縁部に、例えばCH3FやC4F6などのガスを導入する。例えば図3Aに示すように、ウエハ周縁部(Very Edge)ではO2ガスに代えてC4F6ガスをウエハに供給する。
(O,O2)+CxFy−>(COF2,CO,CO2)+(F,F2)…(1)
すなわち、余剰のOラジカルを取り除くことができる。
図4を参照し、本実施形態に係る半導体装置の製造方法に好適なプラズマエッチング装置の一例について説明する。
次に、図4から図8A〜8Dを参照して、プラズマエッチング装置100を用いて行われる、実施形態の製造装置の動作を説明する。図7は、実施形態の半導体装置の製造方法の工程を示すフローチャート、図8A〜8Dは、当該各工程におけるウエハWの様子を示す図である。図8A〜8Dにおいては、便宜上、ウエハ上に形成される多数のトレンチ・ビア構造のうちの一つを示している。また、図8A〜8Dに示す工程は、プラズマエッチング装置100において連続的に行われる。
図4に示すプラズマエッチング装置を用いて、ウエハ周縁部の酸素流量を変化させた場合、ウエハ周縁部にCH3Fガスを導入した場合、およびウエハ周縁部にC4F6ガスを導入した場合について、ウエハ面内のエッチングレートについて調べた。図9Aは、ウエハ周縁部の酸素流量を変化させた場合のエッチングレート、図9Bは、ウエハ周縁部にCH3Fガスを導入した場合のエッチングレート、図9Cは、ウエハ周縁部にC4F6ガスを導入した場合のエッチングレートを示している。
続いて、実施形態のプラズマエッチング装置の変形例を説明する。この変形例は、図4に示すプラズマエッチング装置のシャワーヘッド周辺の構成を変更したものである。以下の説明では、図4に示すプラズマエッチング装置と共通する構成に共通の符号を付して示し、重複する説明を省略する。
続いて、実施形態のプラズマエッチング方法の変形例を説明する。この変形例は、プラズマエッチングに先立ってダミーウエハを搬入し、予めフォーカスリングに堆積処理を施すものである。
続いて、実施形態のプラズマエッチング装置の変形例を説明する。この変形例は、図4に示すプラズマエッチング装置のシャワーヘッド周辺の構成とフォーカスリング周辺の構成を変更したものである。以下の説明では、図4に示すプラズマエッチング装置と共通する構成に共通の符号を付して示し、重複する説明を省略する。
Claims (4)
- チャンバと、該チャンバ内に配設され被処理ウエハが載置されるチャックと、前記チャックの周縁部に前記ウエハの載置位置を囲うように配設されたフォーカスリングと、前記ウエハの径方向の位置に応じて異なる種類のガスを供給可能なガス供給機構とを備えたプラズマエッチング装置を用いて前記ウエハからなる半導体装置を製造する製造方法であって、
有機膜が形成されたウエハを前記チャック上に載置し、
前記処理ガス供給機構から、前記ウエハの有機膜をエッチングするエッチングガスを前記ウエハの中央部に導入し、
前記処理ガス供給機構から、前記エッチングガスと反応する性質を有するエッチング阻害因子ガスを前記ウエハの周縁部に導入し、
前記エッチングガスを用いて前記ウエハをプラズマエッチングすること
を特徴とする半導体装置の製造方法。 - 前記エッチングガスは、少なくともO2ガスを含むガスからなり、
前記エッチング阻害因子ガスは、CxHyFzガス、CxFyガスおよびCxHyガス(ただしx,y,zは自然数)の少なくともいずれかを含むガスからなること
を特徴とする請求項1記載の製造方法。 - 前記エッチングガスは、少なくともO2ガスを含むガスからなり、
前記エッチング阻害因子ガスは、CH3FガスまたはC4F6ガスの少なくともいずれかを含むガスであること
を特徴とする請求項1記載の製造方法。 - 前記エッチング阻害因子ガスは、不飽和ガスを含む混合ガスからなることを特徴とする請求項1記載の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011236694A JP5860668B2 (ja) | 2011-10-28 | 2011-10-28 | 半導体装置の製造方法 |
KR1020147010840A KR102016773B1 (ko) | 2011-10-28 | 2012-10-25 | 반도체 장치의 제조 방법 |
US14/353,451 US9318340B2 (en) | 2011-10-28 | 2012-10-25 | Method of manufacturing a semiconductor device |
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Cited By (6)
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KR20170000340A (ko) | 2015-06-23 | 2017-01-02 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 |
JP2018022925A (ja) * | 2016-07-21 | 2018-02-08 | 東京エレクトロン株式会社 | 半導体装置の製造方法、真空処理装置及び基板処理装置 |
JP2018107427A (ja) * | 2016-12-26 | 2018-07-05 | 東京エレクトロン株式会社 | 半導体装置の製造方法、真空処理装置及び基板処理装置 |
JP2020027945A (ja) * | 2018-08-13 | 2020-02-20 | エスケーシー ソルミックス カンパニー,リミテッド | エッチング装置用リング状部品及びこれを用いた基板のエッチング方法 |
US10593556B2 (en) | 2016-07-21 | 2020-03-17 | Tokyo Electron Limited | Method of fabricating semiconductor device, vacuum processing apparatus and substrate processing apparatus |
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JP6336719B2 (ja) * | 2013-07-16 | 2018-06-06 | 株式会社ディスコ | プラズマエッチング装置 |
US10655224B2 (en) * | 2016-12-20 | 2020-05-19 | Lam Research Corporation | Conical wafer centering and holding device for semiconductor processing |
KR20180080520A (ko) | 2017-01-04 | 2018-07-12 | 삼성전자주식회사 | 포커스 링 및 이를 포함하는 플라즈마 처리 장치 |
JP6945385B2 (ja) * | 2017-08-14 | 2021-10-06 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
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US10593556B2 (en) | 2016-07-21 | 2020-03-17 | Tokyo Electron Limited | Method of fabricating semiconductor device, vacuum processing apparatus and substrate processing apparatus |
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JP2020027945A (ja) * | 2018-08-13 | 2020-02-20 | エスケーシー ソルミックス カンパニー,リミテッド | エッチング装置用リング状部品及びこれを用いた基板のエッチング方法 |
CN113451191A (zh) * | 2020-06-17 | 2021-09-28 | 重庆康佳光电技术研究院有限公司 | 定位装置及蚀刻装置 |
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WO2013061593A1 (ja) | 2013-05-02 |
US9318340B2 (en) | 2016-04-19 |
KR102016773B1 (ko) | 2019-08-30 |
US20140273486A1 (en) | 2014-09-18 |
US9881806B2 (en) | 2018-01-30 |
TW201340202A (zh) | 2013-10-01 |
JP5860668B2 (ja) | 2016-02-16 |
TWI559394B (zh) | 2016-11-21 |
KR20140090162A (ko) | 2014-07-16 |
US20160196981A1 (en) | 2016-07-07 |
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