JP2013087292A - Array antenna type cvd plasma apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the quality of a thin film while improving the productivity of an array antenna type CVD plasma apparatus 1 to a high level.SOLUTION: In the array antenna type CVD plasma apparatus, a pair of cooling panels 47, each having an absorption surface 51f on one side and cooling a substrate W, is perpendicularly installed on an inner wall surface of a side wall 13, and a plurality of intermediate cooling panels 59, each having absorption surfaces 63f on both sides and cooling the substrate W, is perpendicularly installed between the pair of cooling panels 47 on the inner wall surface of the side wall 13. By attaching or detaching the side wall 13 to and from one lateral surface of a chamber body 7, each cooling panel 47 moves in and out from a space between a substrate area A at the front end side and a front wall 9 or between the substrate area A at the back end side and a rear wall 11, while each intermediate cooling panel 59 moves in and out from a space between the adjacent substrate areas A.

Description

  The present invention is an array antenna type in which a thin film is formed on the surface of a substrate by generating a plasma in a vacuum atmosphere and attaching a component of a material gas decomposed by the plasma to the surface of the substrate such as a glass substrate. The present invention relates to a CVD plasma apparatus.

  In recent years, with the increase in area (larger size) of substrates such as glass substrates used in solar cells and the like, various developments have been made on array antenna type CVD plasma devices suitable for film formation on large area substrates (large substrates). (See Patent Document 1 to Patent Document 3). The configuration of the array antenna type CVD plasma apparatus according to the prior art will be described as follows.

  The induction array antenna type CVD plasma apparatus according to the prior art has a vacuum chamber that can be evacuated to a vacuum state, and the vacuum chamber is provided on the front side of the box-shaped chamber body and the chamber body. A front wall, a rear wall provided on the back side of the chamber body, and a side wall provided on the side surface side of the chamber body are provided. In addition, a gas supply source for supplying a material gas to the inside of the vacuum chamber is provided at an appropriate position outside the vacuum chamber.

  Inside the vacuum chamber, a plurality of array antennas for generating plasma are arranged at intervals in the depth direction. Each array antenna has a plurality of antenna elements arranged in the vertical direction with the width direction arranged on the same plane, and a substrate area where a vertical substrate can be set on both sides of each array antenna. Are formed respectively. A high-frequency power source that supplies high-frequency power to each array antenna is disposed at an appropriate position outside the vacuum chamber.

  Therefore, with the substrate set in each substrate area, the inside of the vacuum chamber is depressurized to a vacuum state, and the material gas is supplied to the inside of the vacuum chamber by the gas supply source. Then, by supplying high-frequency wave power to each array antenna by a high-frequency power source, plasma is generated around each array antenna, and the component of the material gas decomposed by the plasma is attached to the surface of each substrate. Thereby, a thin film such as an amorphous silicon film or a microcrystalline silicon film can be formed (formed) on the surface of each substrate.

Japanese Patent Laid-Open No. 2004-143592 JP 2007-262541 A JP 2003-86581 A

  By the way, in order to improve the productivity of the array antenna type CVD plasma apparatus to a high level, it is necessary to increase the high-frequency power supplied from the high-frequency power source to each array antenna to increase the plasma density around each array antenna. There is. On the other hand, when the plasma density around each array antenna is increased, the temperature inside the vacuum chamber rises excessively during the film formation process, making it difficult to maintain the substrate surface temperature at an appropriate temperature (temperature range). Therefore, the quality of a thin film such as an amorphous silicon film or a microcrystalline silicon film is deteriorated.

  That is, there is a problem that it is not easy to improve the quality of the thin film while improving the productivity of the array antenna type CVD plasma apparatus to a high level.

  Accordingly, an object of the present invention is to provide an array antenna type CVD plasma apparatus having a novel configuration that can solve the above-mentioned problems.

  A feature of the present invention is that an array antenna type CVD plasma apparatus that forms a thin film on the surface of a substrate by generating a plasma in a vacuum atmosphere and attaching a component of a material gas decomposed by the plasma to the surface of the substrate. , A chamber main body having a side opening on the side surface, a front wall provided on the front side of the chamber main body, a rear wall provided on the back side of the chamber main body, and a detachable attachment on one side of the chamber main body A vacuum chamber that can be provided and includes a side wall (lid wall) that opens and closes the side opening, and can be decompressed to a vacuum state in the chamber, and a gas supply that supplies a material gas to the inside of the vacuum chamber Are arranged in the depth direction (depth direction of the vacuum chamber) inside the vacuum chamber and spaced in the vertical direction. A substrate area that has a plurality of antenna elements arranged on a plane in the width direction (width direction of the vacuum chamber) and spaced from each other and that can be attached to and detached from the vacuum chamber. Are respectively formed, a plurality of array antennas that generate plasma, a high-frequency power source that supplies high-frequency power to each array antenna (array antenna element in each array antenna), and a vertical arrangement on the inner wall surface of the side wall, A pair of cooling panels (first cooling panels) that are separated in the depth direction and have an absorption surface capable of absorbing radiant heat from the substrate on one side and cool the substrate, and a pair of inner walls of the side walls. Each having an absorption surface that is vertically disposed with an interval in the depth direction between the cooling panels and capable of absorbing radiant heat from the substrate on both sides, A plurality of intermediate cooling panels (second cooling panels) for cooling the plate, and when the side wall is attached to and detached from (attached to and detached from) one side of the chamber body, the cooling panels correspond to each other. Each of the intermediate cooling panels moves forward and backward (enters and leaves) between the substrate area on one end side in the depth direction and the front wall or the substrate area on the other end side in the depth direction and the rear wall. The gist of the invention is that it advances and retreats between the adjacent substrate areas.

  In the claims and specification, “provided” means not only directly provided but also indirectly provided through another member, and The term “provided” is intended to include being disposed directly via another member in addition to being disposed directly. In addition, for the “antenna element”, an inductively coupled electrode or a capacitively coupled electrode is used.

  According to the feature of the present invention, the inside of the vacuum chamber is decompressed to a vacuum state while the substrate is set in each substrate area, and the material gas is supplied to the inside of the vacuum chamber by the gas supply source. Then, by supplying high-frequency wave power to each array antenna by the high-frequency power source, plasma gas is generated around each array antenna, and the component of the material gas decomposed by the plasma is attached to the surface of each substrate. Thereby, a thin film can be formed (formed) on the surface of each substrate.

  Here, the substrate set in the substrate area on the end side (one end side or the other end side) in the depth direction by appropriately operating each cooling panel during the film forming process (end side) Radiant heat from the substrate) is absorbed by the absorption surface of the cooling panel to cool the substrate on the end side. Further, by appropriately operating each intermediate cooling panel, radiant heat is absorbed by the absorption surface of the intermediate cooling panel from the substrate (intermediate substrate) set in the intermediate substrate area in the depth direction. Cool the intermediate substrate. Thereby, even if the high frequency power supplied from the high frequency power supply to each array antenna is increased and the plasma density around each array antenna is increased, the surface temperature of each substrate is suppressed from excessively rising, The surface temperature of the substrate can be maintained at an appropriate temperature (temperature range).

  In addition to the above-described operation, when the side wall is attached to or detached from one side of the chamber body, each cooling panel is connected to the substrate area on one end side in the depth direction and the front wall or the other end in the depth direction. Since the intermediate cooling panel advances and retreats with respect to the space between the adjacent substrate areas, the side wall is disposed in the chamber. The plurality of cooling panels and the plurality of intermediate cooling panels can be taken out from the inside of the chamber body by separating from one side of the main body. Thereby, the attachment / detachment operation (attachment and removal) of the plurality of inductively coupled electrodes with respect to the vacuum chamber is easily performed without considering interference between the inductively coupled electrodes, the cooling panel, and the intermediate cooling panel. be able to.

  According to the present invention, even if the plasma density around each array antenna is increased, the surface temperature of each substrate can be maintained at an appropriate temperature, so that the productivity of the array antenna CVD plasma apparatus can be increased to a high level. The quality of the thin film can be improved while improving.

In addition, since the plurality of inductively coupled electrodes can be easily attached to and detached from the vacuum chamber without considering interference between the inductively coupled electrodes, the cooling panel, and the intermediate cooling panel, The time required for attaching / detaching the inductively coupled electrode can be shortened, and the workability of maintenance such as cleaning maintenance of the inductively coupled electrode can be improved.

FIG. 1 is a side sectional view of an array antenna type CVD plasma apparatus according to an embodiment of the present invention. FIG. 2 is a front sectional view of an array antenna type VCD plasma apparatus according to an embodiment of the present invention. FIG. 3 is a plan sectional view of an array antenna type CVD plasma apparatus according to an embodiment of the present invention. FIG. 4 is a cross-sectional view taken along the line IV-IV in FIG. FIG. 5 is a cross-sectional view taken along line VV in FIG. FIG. 6 is a plan sectional view of an array antenna type CVD plasma apparatus according to an embodiment of the present invention, showing a state in which one side wall is detached from the right side of the chamber body. FIG. 7 is a diagram for explaining the configuration of the circulator and its periphery.

  An embodiment of the present invention will be described with reference to FIGS. In the drawings, “FF” indicates the forward direction, “FR” indicates the backward direction, “L” indicates the left direction, “R” indicates the right direction, “U” indicates the upward direction, and “D” indicates the downward direction. is there.

  As shown in FIGS. 1 to 3, an array antenna type (inductive coupling type) CVD plasma apparatus 1 according to an embodiment of the present invention generates plasma in a vacuum atmosphere and generates a material gas decomposed by the plasma. This is an apparatus for forming (forming) a thin film (not shown) such as an amorphous silicon film or a microcrystalline silicon film on the surface of the substrate W by attaching components to the surface of the substrate W.

  The array antenna type CVD plasma apparatus 1 includes a box-shaped vacuum chamber 3, which is connected to a vacuum pressure generating source 5 such as a vacuum pump for generating a vacuum pressure, and has an internal structure. Can be reduced to a vacuum state. The vacuum chamber 3 includes a box-shaped chamber body 7. The chamber body 7 has a front opening 7a on the front side (front side), a rear opening 7b on the back side (rear side), and one side surface side. A side opening 7c is provided on the (right side), and a side opening 7d is provided on the other side (left side).

  A front wall 9 that opens and closes the front opening 7 a is provided on the front side of the chamber body 7, and a rear wall 11 that opens and closes the rear opening 7 b is provided on the back side of the chamber body 7. A side wall 13 for opening and closing the side opening 7c is detachably provided on one side of the chamber body 7, and a side wall for opening and closing the side opening 7d is provided on the other side of the chamber body 7. 15 (including a gate valve) is provided, and a ceiling wall 17 is provided above the chamber body 7. Furthermore, a pair of guide rails 19 extending in the width direction (left-right direction) of the vacuum chamber are provided on one side (right side) of the vacuum chamber 3, and the pair of guide rails 19 are for side walls. A carriage 21 is provided so as to be movable in the left-right direction, and a left portion of the side wall carriage 21 is integrally connected to a lower portion of the side wall 13. In other words, the side wall 13 is movable in the left-right direction via the side wall carriage 21.

  A gas supply source 23 such as a gas supply pump for supplying a material gas to the inside of the vacuum chamber 3 is disposed at an appropriate position outside the vacuum chamber 3.

  Inside the vacuum chamber 3, a plurality of array antennas 25 that generate plasma are arranged at intervals in the depth direction (front-rear direction) of the vacuum chamber 3. Each array antenna 25 includes a plurality of U-shaped inductively coupled electrodes 25 as a plurality of antenna elements arranged (arranged) on the same plane in the vertical state at intervals in the left-right direction. Each inductively coupled electrode 27 is detachable from the vacuum chamber 3. Furthermore, a substrate area A in which the substrate W can be set is formed on one side or both sides of each array antenna 25. A high-frequency power source 29 that supplies high-frequency power to each array antenna 25 (each inductively coupled electrode 27 in each array antenna 25) is disposed at an appropriate position outside the vacuum chamber 3.

  As shown in FIG. 2, the specific configuration of each inductively coupled electrode 27 will be described. Each inductively coupled electrode 27 has an upper end detachably connected to the ceiling wall 17 via a connector 31 and a high frequency power source. The first electrode rod 33 electrically connected to the supply side (non-grounding side) 29, the upper end of the first electrode rod 33 is detachably connected to the ceiling wall 17 via the connector 35 and is parallel to the first electrode rod 33 The second electrode rod 37 electrically connected to the ground side of the high frequency power source 29, and the lower end portion of the first electrode rod 33 and the lower end portion of the second electrode rod 37 are electrically connected. A connected fitting 39 is provided. Further, each first electrode rod 33 has an outer cylinder (not shown) made of a dielectric material such as ceramic or resin on the outside, as shown in the above-mentioned Patent Document 1 (Japanese Patent Laid-Open No. 2004-143592). The interior of each second electrode rod 37 is connectable to the gas supply source 23, and a plurality of ejection holes for ejecting material gas toward the substrate area A are formed on the outer peripheral surface of each second electrode rod 37. (Not shown) is formed along the vertical direction (longitudinal direction of the second electrode rod 37).

  Instead of using a plurality of U-shaped inductive coupling electrodes 27 as a plurality of array antenna elements for the array antenna 25, a plurality of rod-shaped (I-shaped) inductive coupling electrodes or a plurality of capacitive couplings are used. A mold electrode or the like may be used.

  As shown in FIGS. 1 to 3, a pair of guide rails 41 extending in the left-right direction are provided on the floor inside the vacuum chamber 3, and a holder carriage 43 is provided on the pair of guide rails 41. It is provided so as to be movable in the left-right direction. In other words, the holder carriage 43 is provided on the floor inside the vacuum chamber 3 so as to be movable in the left-right direction via the pair of guide rails 41. Further, the holder carriage 43 can be sent out and pulled out into the vacuum chamber 3 through the side opening 7 d of the chamber body 7. A plurality of frame-like substrate holders 45 that hold one or two substrates W in a vertical state are erected on the holder carriage 43 at intervals in the front-rear direction. Further, by sending the holder carriage 43 to a reference carriage delivery position inside the vacuum chamber 3, the substrate W is set in each substrate area A.

  As shown in FIGS. 1, 3, and 4, a pair of rectangular cooling panels (first cooling panels) 47 that cool the substrate W are vertically arranged on the inner wall surface of the side wall 15 via a bracket 49. The pair of cooling panels 47 are spaced apart in the left-right direction. The specific configuration of each cooling panel 47 is as follows.

  Each cooling panel 47 includes a rectangular cooling panel main body (first cooling panel main body) 51 provided on the inner wall surface of the side wall 15 via a bracket 49. The cooling panel main body 51 is made of a metal such as aluminum. It is comprised by. The cooling panel body 51 has an absorption surface 51f capable of absorbing radiant heat from the substrate W on one side (side facing the substrate area A), and the absorption surface 51f of the cooling panel body 51 includes alumina. A ceramic coating such as the above is applied (in the drawing, the portion subjected to the coating treatment is colored in gray). Further, a meandering circulation channel (first circulation channel) 53 for circulating cooling oil (an example of a cooling medium) is formed inside the cooling panel body 51, and the absorption surface 51 f of the cooling panel body 51. The temperature can be controlled by circulating the cooling oil. An inlet pipe (first inlet pipe) 55 for introducing cooling oil into the circulation channel 53 is integrally provided on the upper right side of the cooling panel main body 51, and the inlet pipe 55 is provided on the side wall 15. The upper part is airtightly inserted. In addition, at the lower right side of the cooling panel main body 51, a lead-out pipe (first lead-out pipe) 57 for leading out the cooling oil from the circulation flow path 53 is provided. Is inserted through.

  As shown in FIGS. 1, 3, and 5, a plurality of rectangular intermediate cooling panels (second cooling panels) that cool the substrate W are interposed between a pair of cooling panels 47 on the inner wall surface of one side wall 15. ) 59 are vertically arranged through the bracket 61 with a space in the front-rear direction. The specific configuration of each intermediate cooling panel 59 is as follows.

  Each intermediate cooling panel 59 includes a rectangular intermediate cooling panel main body (second cooling panel main body) 63 provided on the inner wall surface of one side wall 15 via a bracket 61. It is made of metal such as aluminum. The intermediate cooling panel main body 63 has absorption surfaces 63f that can absorb radiant heat from the substrate W on both sides (front and rear sides), and each absorption surface 63f of the intermediate cooling panel main body 63 includes A ceramic coating such as alumina is applied (in the drawing, the portion subjected to the coating is gray-colored). Furthermore, a meandering intermediate circulation channel (second circulation channel) 65 for circulating cooling oil (an example of a cooling medium) is formed inside the intermediate cooling panel main body 63. The temperature of the absorption surface 63f can be controlled by circulating cooling oil. An intermediate introduction pipe (second introduction pipe) 67 that introduces cooling oil into the intermediate circulation flow path 65 is integrally provided on the upper right side of the intermediate cooling panel main body 63. The upper part of the side wall 15 is inserted airtightly. Further, an intermediate outlet pipe (second outlet pipe) 69 for leading out the cooling oil from the intermediate circulation passage 65 is integrally provided at the lower right side of the intermediate cooling panel body 63. The lower part of the ceiling wall 17 is inserted in an airtight manner.

  3 and 6, when one side wall 15 is attached to or detached from (attached to and detached from) one side surface (right side) of the chamber body 7, each cooling panel is moved to the front end side (the depth of the vacuum chamber 3). The substrate area A on one end side in the direction) and the front wall 9 or between the substrate area A on the rear end side (the other end side in the depth direction of the vacuum chamber 3) and the rear wall 11, Each intermediate cooling panel 59 advances and retreats between adjacent substrate areas A.

  As shown in FIG. 1 and FIG. 7, the side wall carriage 21 is provided with a circulator that circulates temperature-controlled cooling oil in the circulation passage 53 of each cooling panel 47 and the intermediate circulation passage 65 of each intermediate cooling panel 59. Circulation unit) 71 is provided. The forward side of the circulator 71 is connected to the introduction pipe 55 of each cooling panel 47 and the intermediate introduction pipe 67 of each intermediate cooling panel 59 via an outgoing circuit (outward pipe) 73, and the return side of the circulator 71. Are connected to the outlet pipe 57 of each cooling panel 47 and the intermediate outlet pipe 69 of each intermediate cooling panel 59 via a return circuit (return pipe) 75. The circulator 71 includes a heat exchanger 77 that is disposed on the return side of the circulator 71 and exchanges heat between the cooling oil and the outside air, and a heater 79 that is disposed on the forward side of the circulator 71 and heats the cooling oil. And a pump 81 that is disposed between the heat exchanger 77 and the heater 79 and pumps the cooling oil.

  The operation and effect of the embodiment of the present invention will be described.

(i) Operation related to the film forming process First, the circulator 71 circulates the temperature-controlled cooling oil in the circulation channel 53 of each cooling panel body 51 and the intermediate circulation channel 65 of each intermediate cooling panel body 63 (in other words, By appropriately operating each cooling panel 47 and each intermediate cooling panel 59), the temperature inside the vacuum chamber 3 is raised to a predetermined temperature (for example, 100 to 300 ° C. in the embodiment of the present invention). Let Next, by sending the holder carriage 43 to the reference carriage delivery position inside the vacuum chamber 3, each substrate W is set in the corresponding substrate area A. Subsequently, the inside of the vacuum chamber 3 is reduced to a vacuum state by the vacuum pressure generation source 5. Further, by supplying the material gas to the inside of the vacuum chamber 3 by the gas supply source 23, the material gas is ejected from each ejection hole of each second electrode rod 37 toward the substrate area A. Then, by supplying high-frequency wave power to each array antenna 25 from the high-frequency power source 29, plasma is generated around each array antenna 25, and the component of the material gas decomposed by the plasma is attached to the surface of each substrate W. Let Thereby, a thin film such as an amorphous silicon film or a microcrystalline silicon film can be formed (formed) on the surface of each substrate W.

  Here, during the film forming process, the circulator 71 circulates the temperature-controlled cooling oil through the circulation channel 53 of each cooling panel main body 51, whereby the front end side (one end side in the depth direction of the vacuum chamber 3) and Radiant heat from the substrate (substrate on the end side) W set in the substrate area A on the rear end side (the other end side in the depth direction of the vacuum chamber 3) is absorbed by the absorption surface 51f of each cooling panel body 51. Then, the substrate W on the end side is cooled. In addition, the circulator 71 circulates the temperature-controlled cooling oil in the intermediate circulation flow path 65 of each intermediate cooling panel main body 63, thereby setting the substrate area A on the intermediate side (the intermediate side in the depth direction of the vacuum chamber 3). Radiant heat from the substrate (intermediate substrate) W is absorbed by the suction surface 63f of the intermediate cooling panel main body 63 to cool the intermediate substrate W. As a result, even if the high frequency power supplied from the high frequency power supply 29 to each array antenna 25 is increased and the plasma density around each array antenna 25 is increased, the surface temperature of each substrate W is prevented from excessively rising. Thus, the surface temperature of each substrate W can be maintained in an appropriate temperature range (for example, 150 to 300 ° C. in the embodiment of the present invention).

  In particular, since the absorption surface 51f of each cooling panel main body 51 and the absorption surface 63f of each intermediate cooling panel main body 63 are coated with ceramics, the absorption surface 51f of each cooling panel main body 51 and each intermediate cooling panel main body 63 are applied. It is possible to sufficiently and reliably suppress an excessive rise in the surface temperature of each substrate W by increasing the heat absorption rate of the absorption surface 63f.

(ii) Action concerning attachment / detachment work of inductive coupling type electrode 27 When one side wall 13 is attached / detached to / from the right side of the chamber body 7, each cooling panel 47 is connected to the substrate area A on the front end side and the front wall 9 or the rear end portion. Since the intermediate cooling panel 59 advances and retreats between the adjacent substrate areas A, the side wall 13 is moved forward and backward with respect to the space between the substrate area A on the side and the rear wall 11. By separating from the right side of the chamber body 7, the plurality of cooling panels 47 and the plurality of intermediate cooling panels 59 can be taken out from the inside of the chamber body 7. Thereby, the attachment / detachment operation (attachment and removal) of the plurality of inductively coupled electrodes 27 to the vacuum chamber 3 is easily performed without considering interference between the inductively coupled electrode 27 and the cooling panel 47 and the intermediate cooling panel 59. be able to. In particular, even when the number of cooling panels 47 and intermediate cooling panels 59 is increased, the ease of attaching and detaching the plurality of inductively coupled electrodes 27 can be maintained.

(iii) Effects of the embodiment of the present invention According to the embodiment of the present invention, even if the plasma density around each array antenna 25 is increased, the surface temperature of each substrate W can be maintained at an appropriate temperature. The quality of the thin film can be improved while improving the productivity of the array antenna type CVD plasma apparatus 1 to a high level.

In addition, a plurality of inductively coupled electrodes 27 can be easily attached to and detached from the vacuum chamber 3 without considering interference between the inductively coupled electrode 27 and the cooling panel 47 and the intermediate cooling panel 59. The time required for attaching / detaching the coupled electrode 27 can be shortened, and maintenance workability such as cleaning maintenance of the inductively coupled electrode 27 can be improved.

  In particular, even when the number of cooling panels 47 and intermediate cooling panels 59 is increased, the ease of attaching and detaching a plurality of inductively coupled electrodes 27 can be maintained, so the number of substrates W processed by the array antenna CVD plasma apparatus can be maintained. The productivity of the array antenna type CVD plasma apparatus 1 can be further improved.

  In addition, this invention is not restricted to description of the above-mentioned embodiment, It can implement in a various aspect as follows.

  That is, instead of making the absorption surface 51f of each cooling panel body 51 temperature-controllable by circulation of the cooling oil, the temperature control may be made by heat transfer from a heat source (cold heat source) or heat transfer by a heat pipe. Similarly, the temperature of the absorption surface 63f of each intermediate cooling panel main body 63 may be controlled by heat transfer from a heat source or heat transfer by a heat pipe, instead of enabling temperature control by circulation of cooling oil. Further, instead of the cooling oil, another cooling medium (heating medium) such as cooling water is circulated through the circulation passage 53 of each cooling panel body 51 and the intermediate circulation passage 65 of each intermediate cooling panel body 63. It doesn't matter.

  Further, the scope of rights encompassed by the present invention is not limited to these embodiments.

A Substrate area W Substrate 1 Array antenna type CVD plasma apparatus 3 Vacuum chamber 5 Vacuum pressure source 7 Chamber body 7a Front opening of chamber body 7b Rear opening of chamber body 7c Side opening of chamber body 7d Side of chamber body Opening 9 Front wall 11 Rear wall 13 Side wall 15 Side wall 17 Ceiling wall 19 Guide rail 21 Side wall carriage 23 Gas supply source 25 Array antenna 27 Inductively coupled electrode 29 High frequency power source 33 First electrode rod 37 Second electrode rod 39 Connecting bracket 41 Guide rail 43 Holder carriage 45 Substrate holder 47 Cooling panel 49 Bracket 51 Cooling panel body 51f Cooling panel body absorption surface 53 Circulating flow path 55 Inlet pipe 57 Outlet pipe 59 Intermediate cooling panel 61 Bracket 63 Intermediate cooling panel body 63 Intercooling panel absorbent surface 65 intermediate circulation channel 67 intermediate inlet tube 69 intermediate discharging pipe 71 circulator 73 forward circuit 75 returns the circuit 77 the heat exchanger 79 the heater 81 pump body

Claims (4)

In an array antenna type CVD plasma apparatus in which a thin film is formed on the surface of a substrate by generating a plasma in a vacuum atmosphere and attaching a component of a material gas decomposed by the plasma to the surface of the substrate.
A chamber main body having a side opening on one side surface, a front wall provided on the front side of the chamber main body, a rear wall provided on the back side of the chamber main body, and removable on the side surface side of the chamber main body A vacuum chamber that is provided and includes a side wall that opens and closes the side opening, and is capable of depressurizing the chamber to a vacuum state;
A gas supply source for supplying a material gas to the inside of the vacuum chamber;
Provided with a plurality of antenna elements arranged in the vacuum chamber at intervals in the depth direction, arranged in the vertical direction at intervals in the width direction, and detachable from the vacuum chamber. A plurality of array antennas each generating a substrate area on which a substrate in a vertical state can be set on both sides and generating plasma;
A high frequency power supply for supplying high frequency power to each array antenna; and
A pair of cooling panels disposed perpendicular to the inner wall surface of the side wall, spaced apart in the depth direction, having an absorption surface capable of absorbing radiant heat from the substrate on one side, and cooling the substrate;
A plurality of cooling surfaces that are vertically disposed between the pair of cooling panels on the inner wall surface of the side wall with a space in the depth direction and capable of absorbing radiant heat from the substrate on both sides. An intermediate cooling panel,
When the side wall is attached to and detached from one side of the chamber body, each cooling panel has the substrate area on one end side in the depth direction and the substrate area on the front wall or the other end side in the depth direction. An array antenna type CVD plasma apparatus characterized in that the intermediate cooling panel advances and retreats with respect to the rear wall, and each intermediate cooling panel advances and retreats between adjacent substrate areas.   The circulation channel for circulating a cooling medium in each cooling panel is formed, and the intermediate circulation channel for circulating a cooling medium in the intermediate cooling panel is formed. 2. The array antenna type CVD plasma apparatus according to 1.   3. The array antenna type CVD plasma apparatus according to claim 1, wherein a ceramic coating process is applied to the absorption surface of each cooling panel and the absorption surface of the intermediate cooling panel.   The array antenna type CVD according to any one of claims 1 to 3, wherein each antenna element in each array antenna is a U-shaped or bar-shaped inductively coupled electrode. Plasma device.