JP2013084373A - Mask - Google Patents
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- JP2013084373A JP2013084373A JP2011221900A JP2011221900A JP2013084373A JP 2013084373 A JP2013084373 A JP 2013084373A JP 2011221900 A JP2011221900 A JP 2011221900A JP 2011221900 A JP2011221900 A JP 2011221900A JP 2013084373 A JP2013084373 A JP 2013084373A
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- 239000010408 film Substances 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 239000010409 thin film Substances 0.000 claims abstract description 65
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- 239000002184 metal Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 17
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- 229920001721 polyimide Polymers 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 239000003086 colorant Substances 0.000 claims description 3
- 239000000696 magnetic material Substances 0.000 claims description 3
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 abstract description 23
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- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
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- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
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- 238000000206 photolithography Methods 0.000 description 1
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- -1 polyethylene terephthalate Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
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- Electroluminescent Light Sources (AREA)
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Abstract
Description
本発明は、基板面に接触して設置され、該基板上に一定形状の複数種の薄膜パターンを形成するためのマスクに関し、特に高精細な薄膜パターンの形成及び不純物により薄膜パターンがダメージを受けるのを抑制可能とするマスクに係るものである。 The present invention relates to a mask that is placed in contact with a substrate surface to form a plurality of types of thin film patterns having a fixed shape on the substrate, and particularly, the thin film pattern is damaged by formation of high-definition thin film patterns and impurities. The present invention relates to a mask that can suppress this.
従来、この種のマスクは、所定のパターンに対応した形状の開口を有するマスクであり、基板に対して位置合わせした後、該基板上に密着させ、その後上記開口を介して基板に対するパターンニング成膜をするようになっていた（例えば、特許文献１参照）。 Conventionally, this type of mask is a mask having an opening having a shape corresponding to a predetermined pattern. After aligning the substrate, the mask is brought into close contact with the substrate, and then patterned through the opening. A film was formed (for example, see Patent Document 1).
また、他のマスクは、所定の成膜パターンに対応した複数の開口が設けられた強磁性体から成るメタルマスクであり、基板の一面を覆うように基板に密着されると共に、基板の他面側に配置された磁石の磁力を利用して固定され、真空蒸着装置の真空槽内で上記開口を通して基板の一面に蒸着材料を付着させ、薄膜パターンを形成するようになっていた（例えば、特許文献２参照）。 The other mask is a metal mask made of a ferromagnetic material provided with a plurality of openings corresponding to a predetermined film formation pattern, and is in close contact with the substrate so as to cover one surface of the substrate and the other surface of the substrate. It was fixed using the magnetic force of the magnet arranged on the side, and the deposition material was attached to one surface of the substrate through the opening in the vacuum chamber of the vacuum deposition apparatus to form a thin film pattern (for example, patent Reference 2).
しかし、このような従来のマスクにおいて、上記特許文献１に記載のマスクは、一般に、薄い金属板に薄膜パターンに対応した開口を例えばエッチング等により形成して作られるので、開口を高精度に形成することが困難であり、又金属板の熱膨張による位置ずれや反り等の影響で例えば３００ｄｐｉ以上の高精細な薄膜パターンの形成が困難であった。 However, in such a conventional mask, the mask described in Patent Document 1 is generally formed by forming an opening corresponding to a thin film pattern on a thin metal plate by, for example, etching, so that the opening is formed with high accuracy. It is difficult to form a high-definition thin film pattern of, for example, 300 dpi or more due to the influence of misalignment and warpage due to thermal expansion of the metal plate.
また、上記特許文献２に記載のマスクは、上記特許文献１に記載のマスクよりも基板との密着性は改善されるものの、特許文献１に記載のマスクと同様に、薄い金属板に薄膜パターンに対応した開口を例えばエッチング等により形成して作られるので、開口を高精度に形成することが困難であり、例えば３００ｄｐｉ以上の高精細な薄膜パターンの形成が困難であった。 In addition, the mask described in Patent Document 2 has improved adhesion to the substrate as compared with the mask described in Patent Document 1, but, like the mask described in Patent Document 1, a thin metal plate has a thin film pattern. Therefore, it is difficult to form the opening with high accuracy, for example, it is difficult to form a high-definition thin film pattern of 300 dpi or more.
さらに、上記特許文献１，２のいずれに記載のマスクも基板と接触する面は、平坦面であるため、例えば有機ＥＬ表示装置のＴＦＴ基板上に各色の有機ＥＬ層を形成する際、先に形成した有機ＥＬ層の表面にマスクの裏面が接触し、該有機ＥＬ層内にマスクに付着した不純物が浸入して有機ＥＬ層の特性を劣化させるおそれがあった。 Further, since the surface of the mask described in any of Patent Documents 1 and 2 that contacts the substrate is a flat surface, for example, when forming the organic EL layer of each color on the TFT substrate of the organic EL display device, The back surface of the mask is in contact with the surface of the formed organic EL layer, and impurities attached to the mask may enter the organic EL layer and deteriorate the characteristics of the organic EL layer.
そこで、本発明は、このような問題点に対処し、高精細な薄膜パターンの形成及び不純物により薄膜パターンがダメージを受けるのを抑制可能とするマスクを提供することを目的とする。 Therefore, the present invention addresses such problems and an object of the present invention is to provide a mask that can suppress the formation of a high-definition thin film pattern and damage to the thin film pattern due to impurities.
上記目的を達成するために、本発明によるマスクは、基板面に接触して設置され、該基板上に一定形状の複数種の薄膜パターンを形成するためのマスクであって、可視光を透過する樹脂製のフィルムで構成され、前記フィルムは、前記基板上の前記一の薄膜パターンの形成領域に対応して該一の薄膜パターンと同形状の開口パターンを備え、他の薄膜パターンの形成領域に対応して前記基板との接触面側に前記他の薄膜パターンと同形状の凹部を備えている。 In order to achieve the above object, a mask according to the present invention is a mask which is placed in contact with a substrate surface and forms a plurality of types of thin film patterns having a predetermined shape on the substrate, and transmits visible light. The film is made of a resin film, and the film has an opening pattern having the same shape as the one thin film pattern corresponding to the one thin film pattern forming region on the substrate, and the other thin film pattern forming region has Correspondingly, a recess having the same shape as that of the other thin film pattern is provided on the contact surface side with the substrate.
このような構成により、可視光を透過し、基板上に予め定められた複数種の薄膜パターンの形成領域のうち、一の薄膜パターンの形成領域に対応して該一の薄膜パターンと同形状の開口パターンを備え、他の薄膜パターンの形成領域に対応して基板との接触面側に他の薄膜パターンと同形状の凹部を備えたフィルムの上記開口パターンを介して成膜し、基板上に薄膜パターンを形成する。 With such a configuration, visible light is transmitted and the same shape as the one thin film pattern corresponds to the one thin film pattern formation region among a plurality of predetermined thin film pattern formation regions on the substrate. A film having an opening pattern is formed through the opening pattern of the film having a recess having the same shape as the other thin film pattern on the contact surface side with the substrate corresponding to the formation region of the other thin film pattern, and is formed on the substrate. A thin film pattern is formed.
好ましくは、前記フィルムは、前記基板上に予め定められた前記複数種の薄膜パターンの形成領域のうち、一の薄膜パターンの形成領域に対応して該一の薄膜パターンよりも形状の大きい貫通する開口部を形成した板体状の保持部材に、前記開口パターンを前記保持部材の開口部内に位置させた状態で面接合して保持されているのが望ましい。
この場合、前記保持部材は、金属材料を含んで構成されているとよい。
より好ましくは、前記フィルムは、その一部に金属膜をコーティングして備え、該金属膜と前記保持部材とをノンフラックス半田付けして前記保持部材に保持されるのが望ましい。
Preferably, the film penetrates larger in shape than the one thin film pattern corresponding to one thin film pattern formation region among the plurality of types of thin film pattern formation regions predetermined on the substrate. It is desirable that the plate-shaped holding member in which the opening is formed is held by being surface-bonded in a state where the opening pattern is positioned in the opening of the holding member.
In this case, the holding member may include a metal material.
More preferably, a part of the film is coated with a metal film, and the metal film and the holding member are non-flux soldered and held on the holding member.
好ましくは、前記保持部材は、磁性材料を含んで構成されているとよい。
より好ましくは、前記フィルムは、ポリイミドから成るのが望ましい。
Preferably, the holding member may include a magnetic material.
More preferably, the film is made of polyimide.
この場合、前記基板は、有機ＥＬ表示装置のＴＦＴ基板であり、前記複数種の薄膜パターンは、各色対応の有機ＥＬ層であるのが望ましい。 In this case, it is preferable that the substrate is a TFT substrate of an organic EL display device, and the plurality of types of thin film patterns are organic EL layers corresponding to respective colors.
本発明によれば、薄いフィルムに開口パターンを形成するので、開口パターンの形成精度を向上することができる。また、開口パターンを形成したフィルムを基板上に設置するのでフィルムと基板との密着性が増し、薄膜パターンの形成精度を向上することができる。したがって、高精細な薄膜パターンの形成を容易に行なうことができる。さらに、基板上に設置したとき、先に形成した薄膜パターンとフィルムとの間に凹部の深さに相当する隙間が生じて薄膜パターンがフィルム面に接触しないので、フィルムの不純物が薄膜パターン内に浸入して薄膜パターンにダメージを与え、薄膜パターンの特性を劣化させるおそれがない。 According to the present invention, since the opening pattern is formed on the thin film, the formation accuracy of the opening pattern can be improved. Moreover, since the film in which the opening pattern is formed is placed on the substrate, the adhesion between the film and the substrate is increased, and the formation accuracy of the thin film pattern can be improved. Therefore, it is possible to easily form a high-definition thin film pattern. Furthermore, when installed on the substrate, a gap corresponding to the depth of the recess is formed between the previously formed thin film pattern and the film, and the thin film pattern does not contact the film surface, so that the impurities of the film are in the thin film pattern. There is no possibility that the film penetrates and damages the thin film pattern and deteriorates the characteristics of the thin film pattern.
以下、本発明の実施形態を添付図面に基づいて詳細に説明する。図１は本発明によるマスクの実施形態を示す図であり、（ａ）は平面図、（ｂ）は（ａ）のＯ−Ｏ線断面矢視図、（ｃ）は（ｂ）の一部拡大断面図である。このマスク１は、基板面に接触して設置され、該基板上に一定形状の複数種の薄膜パターンを形成するためのものであり、フィルム２と、保持部材３とを備えて構成されている。以下、一例として、基板が有機ＥＬ表示装置のＴＦＴ基板であり、マスク１がＲ（赤色）有機ＥＬ層形成用マスクである場合について説明する。 Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. 1A and 1B are diagrams showing an embodiment of a mask according to the present invention, in which FIG. 1A is a plan view, FIG. 1B is a cross-sectional view taken along line OO in FIG. 1A, and FIG. It is an expanded sectional view. The mask 1 is placed in contact with the substrate surface and is used to form a plurality of types of thin film patterns having a fixed shape on the substrate. The mask 1 includes a film 2 and a holding member 3. . Hereinafter, as an example, a case where the substrate is a TFT substrate of an organic EL display device and the mask 1 is an R (red) organic EL layer forming mask will be described.
上記フィルム２は、可視光を透過する一定面積の樹脂製シートであり、ＴＦＴ基板上に予め定められた複数種の薄膜パターンとしてのＲ（赤色）有機ＥＬ層、Ｇ（緑色）有機ＥＬ層及びＢ（青色）有機ＥＬ層の形成領域のうち、Ｒ有機ＥＬ層形成領域に対応して後述の保持部材３の開口部５内にＲ有機ＥＬ層のパターンと同形状の貫通する開口パターン４を備えている。この開口パターン４は、図１に示すように、ＴＦＴ基板上に予め設けられた同色の複数のアノード電極に跨るストライプ状のものであってもよく、図２に示すように上記各アノード電極に対応して夫々個別に設けられたものであってもよい。上記フィルム２は、例えば厚みが１０μｍ〜３０μｍ程度のポリイミドやポリエチレンテレフタレート（ＰＥＴ）等の樹脂製であり、特にポリイミドは耐熱性が高く、且つウェットエッチングやドライエッチングにより開口パターン４を精度よく形成することができる点で好ましい。 The film 2 is a resin sheet having a constant area that transmits visible light, and includes an R (red) organic EL layer, a G (green) organic EL layer, and a plurality of predetermined thin film patterns on the TFT substrate. Of the B (blue) organic EL layer formation region, an opening pattern 4 penetrating in the same shape as the pattern of the R organic EL layer is formed in the opening 5 of the holding member 3 described later corresponding to the R organic EL layer formation region. I have. As shown in FIG. 1, the opening pattern 4 may be in the form of stripes straddling a plurality of anode electrodes of the same color provided in advance on the TFT substrate. As shown in FIG. Correspondingly, they may be provided individually. The film 2 is made of a resin such as polyimide having a thickness of about 10 μm to 30 μm, polyethylene terephthalate (PET), and the like. Particularly, polyimide has high heat resistance, and the opening pattern 4 is accurately formed by wet etching or dry etching. It is preferable in that it can be performed.
さらに、上記フィルム２は、図１（ｃ）に拡大して示すように、Ｇ有機ＥＬ層及びＢ有機ＥＬ層の形成領域に対応してＴＦＴ基板との接触面２ａ側にＧ有機ＥＬ層及びＢ有機ＥＬ層のパターンと同形状で、ＴＦＴ基板面に接触させたときフィルム２の面が先に形成された例えばＧ有機ＥＬ層又はＢ有機ＥＬ層の面に接触しない程度の深さに形成された凹部６を備えている。 Further, as shown in the enlarged view of FIG. 1C, the film 2 has a G organic EL layer and a contact surface 2a side with the TFT substrate corresponding to the formation region of the G organic EL layer and the B organic EL layer. Formed to the same depth as the pattern of the B organic EL layer so that the surface of the film 2 does not contact the surface of the previously formed G organic EL layer or B organic EL layer when it is brought into contact with the TFT substrate surface. The recessed part 6 was provided.
上記保持部材３は、上記フィルム２の一面に面接触して該フィルム２を保持するものであり、例えばエッチングや、レーザ加工等の公知の技術を使用して、ＴＦＴ基板上のＲ有機ＥＬ層形成領域に対応してＲ有機ＥＬ層のパターンよりも形状の大きい貫通する開口部５を形成した板体であり、例えば金属材料を含んで構成されている。なお、図１において、符号７は、ＴＦＴ基板に予め形成された基板側アライメントマークに対して位置合わせするためのマスク側アライメントマークである。 The holding member 3 holds the film 2 in surface contact with the one surface of the film 2. For example, an R organic EL layer on the TFT substrate using a known technique such as etching or laser processing. A plate body having openings 5 penetrating in a shape larger than the pattern of the R organic EL layer corresponding to the formation region, and includes, for example, a metal material. In FIG. 1, reference numeral 7 denotes a mask side alignment mark for alignment with a substrate side alignment mark formed in advance on the TFT substrate.
保持部材３は、非金属材料で構成されていてもよい。この場合、一定電圧を印加可能に構成された静電チャックステージ上にＴＦＴ基板を載置した状態でステージに電圧を印加することにより、保持部材３をＴＦＴ基板側に静電吸着させて上記フィルム２をＴＦＴ基板面に密着させることができる。したがって、開口パターン４の形成精度を向上することができ、また有機ＥＬ層のパターンの形成精度も向上することができる。 The holding member 3 may be made of a nonmetallic material. In this case, the film is electrostatically attracted to the TFT substrate side by applying a voltage to the stage in a state where the TFT substrate is mounted on an electrostatic chuck stage configured to be able to apply a constant voltage. 2 can be brought into close contact with the TFT substrate surface. Therefore, the formation accuracy of the opening pattern 4 can be improved, and the formation accuracy of the pattern of the organic EL layer can also be improved.
又は、保持部材３は、磁性材料を含んで構成されてもよい。これにより、永久磁石や電磁石を内蔵した磁気チャックステージ上に載置されたＴＦＴ基板に上記磁石の静磁界の作用により保持部材３を吸着して、上記フィルム２をＴＦＴ基板面に密着させることができる。したがって、この場合も、開口パターン４の形成精度を向上することができ、また有機ＥＬ層のパターンの形成精度も向上することができる。 Or the holding member 3 may be comprised including a magnetic material. Accordingly, the holding member 3 is attracted to the TFT substrate placed on the magnetic chuck stage containing the permanent magnet or the electromagnet by the action of the static magnetic field of the magnet, and the film 2 is adhered to the TFT substrate surface. it can. Therefore, also in this case, the formation accuracy of the opening pattern 4 can be improved, and the formation accuracy of the pattern of the organic EL layer can also be improved.
なお、保持部材３には、図３に示すように、有機ＥＬ層の形成に影響を及ぼさない予め定められた部分に開口部５を複数単位に分割するブリッジ８を設けるとよい。これにより、保持部材３の剛性が増し、撓みを抑えることができる。したがって、マスク１とＴＦＴ基板との位置合わせ精度をより向上して有機ＥＬ層のパターンの形成精度をより向上することができる。 As shown in FIG. 3, the holding member 3 may be provided with a bridge 8 that divides the opening 5 into a plurality of units at a predetermined portion that does not affect the formation of the organic EL layer. Thereby, the rigidity of the holding member 3 increases and it can suppress bending. Therefore, the alignment accuracy between the mask 1 and the TFT substrate can be further improved, and the pattern formation accuracy of the organic EL layer can be further improved.
次に、このように構成されたマスク１の製造について説明する。
図４は、フィルム２に凹部６を形成する工程を説明する断面図である。
先ず、同図（ａ）に示すように、可視光を透過する厚みが１０μｍ〜３０μｍ程度の例えばポリイミドのフィルム２を、例えば静電チャックステージ９上に張設した後、静電吸着して保持した状態で、同図（ｂ）に示すようにフィルム２面上にフォトレジスト１０を塗布する。
Next, the manufacture of the mask 1 configured as described above will be described.
FIG. 4 is a cross-sectional view illustrating a process of forming the recess 6 in the film 2.
First, as shown in FIG. 2A, a polyimide film 2 having a thickness of about 10 μm to 30 μm that transmits visible light is stretched on, for example, an electrostatic chuck stage 9 and then electrostatically adsorbed and held. In this state, a photoresist 10 is applied on the surface of the film 2 as shown in FIG.
次に、図示省略のフォトマスクを使用して上記フォトレジスト１０を露光した後、現像し、図４（ｃ）に示すようにＴＦＴ基板の各色の有機ＥＬ層形成領域に対応した部分に開口１１を有するレジストマスク１２を形成する。 Next, the photoresist 10 is exposed using a photomask (not shown) and then developed. As shown in FIG. 4C, openings 11 are formed in portions corresponding to the organic EL layer forming regions of the respective colors on the TFT substrate. A resist mask 12 having the following is formed.
続いて、図４（ｄ）に示すように、上記レジストマスク１２を使用してフィルム２をエッチングし、一定深さの凹部６を形成する。この場合、フィルム２のエッチングは、ウェットエッチング又はドライエッチング等の公知の技術を使用して行なうことができる。 Subsequently, as shown in FIG. 4D, the film 2 is etched using the resist mask 12 to form a recess 6 having a certain depth. In this case, the etching of the film 2 can be performed using a known technique such as wet etching or dry etching.
次に、図５を参照してマスク１の製造について説明する。
先ず、一面（ＴＦＴ基板との接触面２ａ）にＴＦＴ基板の各色の有機ＥＬ層形成領域に対応して一定深さの凹部６を形成したフィルム２の他面２ｂと、ＴＦＴ基板のＲ有機ＥＬ層形成領域に対応してＲ有機ＥＬ層のパターンよりも形状の大きい貫通する開口部５を形成した例えば金属板からなる保持部材３とを、同図に矢印で示すように面接合し、同図（ｂ）に示すマスク用部材１３を形成する。
Next, the manufacture of the mask 1 will be described with reference to FIG.
First, the other surface 2b of the film 2 having a concave portion 6 of a certain depth corresponding to the organic EL layer forming region of each color of the TFT substrate on one surface (contact surface 2a with the TFT substrate), and the R organic EL of the TFT substrate A holding member 3 made of, for example, a metal plate, in which a penetrating opening 5 having a shape larger than the pattern of the R organic EL layer corresponding to the layer formation region is formed, is surface-bonded as indicated by an arrow in FIG. A mask member 13 shown in FIG.
上記面接合は、好ましくは、図６に示すように、一部（例えば周縁領域）に金属膜１４をコーティングしたフィルム２を使用して、該金属膜１４上に塗布されたノンフラックス半田１５によりフィルム２を保持部材３にノンフラックス半田付けするとよい。また、大面積の基板上の複数領域に薄膜パターン群を形成する場合には、図７に示すように、基板上の上記複数領域に対応したフィルム２の複数領域１６の周縁部に金属膜１４をコーティングし、該金属膜１４上に上記各領域１６を囲んでノンフラックス半田１５を塗布したフィルム２を使用するとよい。このようなフィルム２と保持部材３とをノンフラックス半田付けして形成したマスク１を使用すれば、例えば有機ＥＬ層を真空蒸着して形成する際に半田からアウトガスが発生せず、アウトガスの不純物により有機ＥＬ層２１がダメージを受けるおそれがない。なお、図６及び図７に示す符号１７は、保持部材３に形成されたマスク側アライメントマークに対応して形成された開口であり、フィルム２を通して基板上の基板側アライメントマークを観察可能にするためのものである。 The surface bonding is preferably performed by using non-flux solder 15 applied on the metal film 14 using a film 2 having a part (for example, a peripheral region) coated with the metal film 14 as shown in FIG. The film 2 may be non-flux soldered to the holding member 3. When forming a thin film pattern group in a plurality of regions on a large-area substrate, as shown in FIG. 7, the metal film 14 is formed on the periphery of the plurality of regions 16 of the film 2 corresponding to the plurality of regions on the substrate. It is preferable to use the film 2 in which the non-flux solder 15 is applied on the metal film 14 so as to surround the regions 16. When the mask 1 formed by non-flux soldering the film 2 and the holding member 3 is used, for example, when the organic EL layer is formed by vacuum deposition, no outgas is generated from the solder, and the outgas impurities Therefore, there is no possibility that the organic EL layer 21 is damaged. Reference numerals 17 shown in FIGS. 6 and 7 are openings formed corresponding to the mask-side alignment marks formed on the holding member 3, so that the substrate-side alignment marks on the substrate can be observed through the film 2. Is for.
上記面接合には、保持部材３にフィルム状の樹脂を圧着させる方法、保持部材３にフィルム状の樹脂を接着させる方法、半乾燥状態の樹脂溶液に保持部材３を圧着する方法、又は保持部材３に溶液状の樹脂をコーティングする方法等が含まれる。 For the surface bonding, a method of pressure-bonding a film-like resin to the holding member 3, a method of bonding a film-like resin to the holding member 3, a method of pressure-bonding the holding member 3 to a semi-dried resin solution, or a holding member 3 includes a method of coating a solution-like resin.
詳細には、上記フィルム状の樹脂を圧着させる方法には、熱可塑性のフィルム２や表面に融着性処理が施されたフィルム２に保持部材３を熱圧着する方法や、フィルム２の表面を改質処理して保持部材３を熱圧着する方法がある。この場合、フィルム２の表面にカルボキシル基（−ＣＯＯＨ）やカルボニル基（−ＣＯＯ）等を形成して表面の改質を行えば、金属製の保持部材３との界面における化学結合により接着が可能となる。又は、フィルム２の表面を大気圧プラズマ又は減圧プラズマ中でプラズマ処理したり、アルカリ溶液でフィルム２の表面をウェットエッチングしたりしてフィルム２の表面を改質してもよい。 In detail, the method of press-bonding the film-like resin includes a method of thermo-compressing the holding member 3 to the thermoplastic film 2 or the film 2 whose surface has been subjected to a fusion process, There is a method in which the holding member 3 is thermocompression-bonded by a modification treatment. In this case, if the surface of the film 2 is modified by forming a carboxyl group (—COOH), a carbonyl group (—COO) or the like on the surface of the film 2, adhesion is possible by chemical bonding at the interface with the metal holding member 3. It becomes. Alternatively, the surface of the film 2 may be modified by subjecting the surface of the film 2 to plasma treatment in atmospheric pressure plasma or reduced pressure plasma, or wet etching the surface of the film 2 with an alkaline solution.
また、保持部材３にフィルム状の樹脂を接着させる方法には、溶剤を含まない、又は溶剤を極めて少ない量だけ含む硬化性樹脂により接着する方法があり、前述のノンフラックス半田による接着方法もこれに含まれる。 Further, as a method of adhering the film-like resin to the holding member 3, there is a method of adhering with a curable resin that does not contain a solvent or contains an extremely small amount of a solvent, and the adhering method using the non-flux solder described above is also used. include.
次いで、図５（ｃ）に示すように、マスク用部材１３を基準パターン１２を形成した基板１８（例えば、有機ＥＬ表示用ＴＦＴ基板のダミー基板）上に載置した後、マスク側アライメントマーク７と図示省略の基板側アライメントマークとを例えば顕微鏡により観察しながら、各マークが一定の位置関係を成すように調整してマスク用部材１３と基板１８との位置合わせを行う。 Next, as shown in FIG. 5C, the mask member 13 is placed on the substrate 18 (for example, a dummy substrate of the organic EL display TFT substrate) on which the reference pattern 12 is formed, and then the mask alignment mark 7 is placed. While aligning the substrate-side alignment marks (not shown) with a microscope, for example, the mask members 13 and the substrate 18 are aligned by adjusting the marks so as to form a certain positional relationship.
続いて、波長が４００ｎｍ以下の、例えばＫｒＦ２４８ｎｍのエキシマレーザを使用して、図５（ｄ）に示すように、保持部材３の開口部５内に位置するフィルム２の部分で、上記基板１８の基準パターン１２上の薄膜パターン形成領域に対応したフィルム２の部分にエネルギー密度が１Ｊ／ｃｍ２〜２０Ｊ／ｃｍ２のレーザ光Ｌを照射し、図８に拡大して示すように当該部分に２μｍ程度の薄い層を残して一定深さの穴部１９を形成する。このような紫外線のレーザ光Ｌを使用すれば、レーザ光Ｌの光エネルギーによりフィルム２の炭素結合が一瞬のうちに破壊されて除去されるため、残渣の無いクリーンな穴あけ加工を行うことができる。 Subsequently, using an excimer laser having a wavelength of 400 nm or less, for example, KrF 248 nm, as shown in FIG. 5D, the film 18 is positioned in the opening 5 of the holding member 3. energy density irradiated with laser light L of 1J / cm 2 ~20J / cm 2 to the thin film pattern forming region portion of the film 2 corresponding to on the reference pattern 12, 2 [mu] m in the portion as shown in the enlarged view of FIG. 8 The hole 19 having a constant depth is formed while leaving a thin layer. If such an ultraviolet laser beam L is used, the carbon bond of the film 2 is broken and removed instantly by the optical energy of the laser beam L, so that clean drilling without residue can be performed. .
その後、図５（ｅ）に示すように、公知の技術を使用してフィルム２を例えば面２ｂ側からウェットエッチング又はドライエッチングし、上記穴部１９を貫通させて開口パターン４を形成する。これにより、本発明のマスク１が完成する。 Thereafter, as shown in FIG. 5E, the film 2 is wet-etched or dry-etched from the surface 2b side, for example, using a known technique, and the opening 19 is formed through the hole 19. Thereby, the mask 1 of the present invention is completed.
なお、上記実施形態においては、フィルム２の開口パターン４の形成をレーザ光Ｌを使用して行う場合について説明したが、本発明はこれに限られず、公知のフォトリソグラフィー技術を使用して行ってもよい。即ち、フィルム２の面２ａにフォトレジストを塗布し、フォトマスクを使用してこのフォトレジストを露光することによりレジストマスクを形成し、該レジストマスクを使用して上記フィルム２をウェットエッチング又はドライエッチングして開口パターン４を形成してもよい。 In addition, in the said embodiment, although the case where formation of the opening pattern 4 of the film 2 was performed using the laser beam L was demonstrated, this invention is not restricted to this, It performs using a well-known photolithography technique. Also good. That is, a photoresist is applied to the surface 2a of the film 2, and a photoresist mask is formed by exposing the photoresist using a photomask, and the film 2 is wet etched or dry etched using the resist mask. Thus, the opening pattern 4 may be formed.
次に、本発明のマスク１を使用して行う有機ＥＬ表示用基板の製造について、図９を参照して説明する。ここでは、既にＧ有機ＥＬ層２１Ｇ及びＢ有機ＥＬ層２１Ｂが形成されたＴＦＴ基板２０上にＲ有機ＥＬ層２１Ｒを形成する場合について説明する。
先ず、第１ステップにおいては、図９（ａ）に示すようにＴＦＴ基板２０上にマスク１を載置し、マスク１に形成されたマスク側アライメントマーク７とＴＦＴ基板２０に予め形成された図示省略の基板側アライメントマークとを顕微鏡により観察しながら、両マークが予め定められた位置関係となるように調整してマスク１とＴＦＴ基板２０とを位置合わせする。これにより、同図（ａ）に示すように、マスク１の開口パターン４がＴＦＴ基板２０のＲ対応のアノード電極２２Ｒ上に合致することになる。
Next, manufacturing of an organic EL display substrate using the mask 1 of the present invention will be described with reference to FIG. Here, a case where the R organic EL layer 21R is formed on the TFT substrate 20 on which the G organic EL layer 21G and the B organic EL layer 21B are already formed will be described.
First, in the first step, as shown in FIG. 9A, the mask 1 is placed on the TFT substrate 20, and the mask-side alignment mark 7 formed on the mask 1 and the TFT substrate 20 are formed in advance. While observing the omitted substrate-side alignment mark with a microscope, the mask 1 and the TFT substrate 20 are aligned by adjusting the two marks to have a predetermined positional relationship. As a result, the opening pattern 4 of the mask 1 matches the anode electrode 22R corresponding to the R of the TFT substrate 20, as shown in FIG.
第２ステップにおいては、マスク１とＴＦＴ基板２０とを密着させた状態で例えば真空蒸着装置の真空槽内に設置し、図９（ｂ）に示すように、ＴＦＴ基板２０のＲ対応のアノード電極２２Ｒ上にマスク１の開口パターン４を介して正孔注入層、正孔輸送層、Ｒ発光層、電子輸送層等の積層構造となるように順次成膜してＲ有機ＥＬ層２１Ｒを蒸着形成する。この場合、Ｇ有機ＥＬ層２１Ｇ及びＢ有機ＥＬ層２１Ｂとフィルム２との間には、凹部６の深さに相当する隙間が生じているため、Ｇ有機ＥＬ層２１Ｇ及びＢ有機ＥＬ層２１Ｂがフィルム２面に接触せず、フィルム２の不純物が各有機ＥＬ層２１Ｇ，２１Ｂ内に浸入して有機ＥＬ層の特性を劣化させるおそれがない。 In the second step, the mask 1 and the TFT substrate 20 are placed in close contact with each other, for example, in a vacuum chamber of a vacuum deposition apparatus, and as shown in FIG. The organic EL layer 21R is formed by vapor deposition on the 22R through the opening pattern 4 of the mask 1 in order to form a stacked structure of a hole injection layer, a hole transport layer, an R light emitting layer, an electron transport layer, and the like. To do. In this case, a gap corresponding to the depth of the recess 6 is generated between the G organic EL layer 21G and the B organic EL layer 21B and the film 2, so that the G organic EL layer 21G and the B organic EL layer 21B are There is no possibility that the impurities of the film 2 may enter the organic EL layers 21G and 21B and deteriorate the characteristics of the organic EL layer without contacting the surface of the film 2.
第３ステップにおいては、図９（ｃ）に示すように、マスク１の縁部を同図に矢印で示すように上方に持ち上げてマスク１をＴＦＴ基板２０面から機械的に剥離する。これにより、Ｒ対応のアノード電極２２Ｒ上にＲ有機ＥＬ層２１Ｒが残りＲ有機ＥＬ層２１Ｒの形成工程が終了する。この場合、フィルム２の厚みが約１０μｍ〜３０μｍであるのに対してＲ有機ＥＬ層２１Ｒの厚みは１００ｎｍ程度であるので、フィルム２の開口パターン４の側壁に付着するＲ有機ＥＬ層２１Ｒの厚みは極薄いためマスク１を剥離する際に、フィルム２とＲ対応のアノード電極２２Ｒ上のＲ有機ＥＬ層２１Ｒとが容易に分離する。したがって、マスク１を剥離する際にＲ対応のアノード電極２２Ｒ上のＲ有機ＥＬ層２１Ｒが剥離するおそれがない。 In the third step, as shown in FIG. 9C, the edge of the mask 1 is lifted upward as indicated by an arrow in the drawing to mechanically peel the mask 1 from the surface of the TFT substrate 20. Thereby, the R organic EL layer 21R remains on the anode electrode 22R corresponding to R, and the formation process of the R organic EL layer 21R is completed. In this case, since the thickness of the film 2 is about 10 μm to 30 μm and the thickness of the R organic EL layer 21R is about 100 nm, the thickness of the R organic EL layer 21R attached to the sidewall of the opening pattern 4 of the film 2 Therefore, when the mask 1 is peeled off, the film 2 and the R organic EL layer 21R on the R-compatible anode electrode 22R are easily separated. Therefore, when the mask 1 is peeled off, there is no possibility that the R organic EL layer 21R on the anode electrode 22R corresponding to R is peeled off.
以降、ＴＦＴ基板２０上にＩＴＯ（Indium Tin Oxide）の透明導電膜を形成し、さらにその上に透明な保護基板を接着して有機ＥＬ表示装置が形成される。 Thereafter, an ITO (Indium Tin Oxide) transparent conductive film is formed on the TFT substrate 20, and a transparent protective substrate is further bonded thereon to form an organic EL display device.
なお、上記実施形態においては、フィルム２が板体状の保持部材３に面接合して保持されている場合について説明したが、本発明はこれに限られず、保持部材３はなくてもよい。 In addition, in the said embodiment, although the case where the film 2 was surface-bonded and hold | maintained at the plate-shaped holding member 3 was demonstrated, this invention is not limited to this, The holding member 3 does not need to be.
また、上記実施形態においては、本発明のマスク１を有機ＥＬ表示装置の製造に使用する場合について説明したが、本発明のマスク１は、下層の不純物拡散層等の素子領域に、ダメージやコンタミネーションを与えるおそれのない半導体装置等の製造に使用してもよい。 In the above embodiment, the case where the mask 1 of the present invention is used for manufacturing an organic EL display device has been described. However, the mask 1 of the present invention does not damage or contaminate an element region such as a lower impurity diffusion layer. You may use for manufacture of the semiconductor device etc. which do not have a possibility of giving a nation.
１…マスク
２…フィルム
３…保持部材
４…開口パターン
５…開口部
６…凹部
１４…金属膜
１５…ノンフラックス半田
２０…ＴＦＴ基板
２１Ｒ…Ｒ有機ＥＬ層
２１Ｇ…Ｇ有機ＥＬ層
２１Ｂ…Ｂ有機ＥＬ層
DESCRIPTION OF SYMBOLS 1 ... Mask 2 ... Film 3 ... Holding member 4 ... Opening pattern 5 ... Opening part 6 ... Recessed part 14 ... Metal film 15 ... Non-flux solder 20 ... TFT substrate 21R ... R organic EL layer 21G ... G organic EL layer 21B ... B organic EL layer
上記目的を達成するために、本発明によるマスクは、基板面に接触して設置され、該基板上に一定形状の複数種の薄膜パターンを形成するためのマスクであって、可視光を透過する樹脂製のフィルムで構成され、前記フィルムは、前記基板上に形成される前記複数種の薄膜パターンのうち、一の薄膜パターンの形成領域に対応して該一の薄膜パターンと同形状の開口パターンを備え、他の薄膜パターンの形成領域に対応して前記基板との接触面側に前記他の薄膜パターンと同形状の凹部を備えている。 In order to achieve the above object, a mask according to the present invention is a mask which is placed in contact with a substrate surface and forms a plurality of types of thin film patterns having a predetermined shape on the substrate, and transmits visible light. An opening pattern having the same shape as the one thin film pattern corresponding to a forming region of one thin film pattern among the plurality of types of thin film patterns formed on the substrate. And a recess having the same shape as that of the other thin film pattern is provided on the contact surface side with the substrate corresponding to the formation region of the other thin film pattern.
好ましくは、前記フィルムは、前記基板上に予め定められた前記複数種の薄膜パターンの形成領域のうち、前記一の薄膜パターンの形成領域に対応して該一の薄膜パターンよりも形状の大きい貫通する開口部を形成した板体状の保持部材に、前記開口パターンを前記保持部材の開口部内に位置させた状態で面接合して保持されているのが望ましい。
この場合、前記保持部材は、金属材料を含んで構成されているとよい。
より好ましくは、前記フィルムは、その一部に金属膜をコーティングして備え、該金属膜と前記保持部材とをノンフラックス半田付けして前記保持部材に保持されるのが望ましい。
Preferably, the film is out of the forming region of the plurality of kinds of thin films to a predetermined pattern on the substrate, a large penetration shape than thin-film pattern of the one corresponding to the formation region of the one thin film pattern It is desirable that the plate-shaped holding member formed with the opening to be held by surface bonding with the opening pattern positioned in the opening of the holding member.
In this case, the holding member may include a metal material.
More preferably, a part of the film is coated with a metal film, and the metal film and the holding member are non-flux soldered and held on the holding member.
Claims (7)
可視光を透過する樹脂製のフィルムで構成され、
前記フィルムは、前記基板上の前記一の薄膜パターンの形成領域に対応して該一の薄膜パターンと同形状の開口パターンを備え、他の薄膜パターンの形成領域に対応して前記基板との接触面側に前記他の薄膜パターンと同形状の凹部を備えていることを特徴とするマスク。 A mask that is placed in contact with a substrate surface and forms a plurality of types of thin film patterns having a predetermined shape on the substrate,
Consists of a resin film that transmits visible light,
The film includes an opening pattern having the same shape as the one thin film pattern corresponding to the formation region of the one thin film pattern on the substrate, and is in contact with the substrate corresponding to the formation region of the other thin film pattern. A mask comprising a concave portion having the same shape as the other thin film pattern on the surface side.
前記複数種の薄膜パターンは、各色対応の有機ＥＬ層である、
ことを特徴とする請求項１〜６のいずれか１項に記載のマスク。 The substrate is a TFT substrate of an organic EL display device,
The plurality of types of thin film patterns are organic EL layers corresponding to the respective colors.
The mask according to any one of claims 1 to 6, wherein:
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| JP2011221900A JP5804457B2 (en) | 2011-10-06 | 2011-10-06 | mask |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013216978A (en) * | 2012-01-12 | 2013-10-24 | Dainippon Printing Co Ltd | Vapor deposition mask, method for manufacturing vapor deposition mask device, and method for manufacturing organic semiconductor element |
| JP2015017308A (en) * | 2013-07-11 | 2015-01-29 | 大日本印刷株式会社 | Vapor deposition mask, metallic mask with resin layer, and organic semiconductor element manufacturing method |
| JP2015148002A (en) * | 2014-02-07 | 2015-08-20 | 大日本印刷株式会社 | Vapor deposition mask, vapor deposition mask preparation body, and manufacturing method for organic semiconductor device |
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| US11511301B2 (en) | 2012-01-12 | 2022-11-29 | Dai Nippon Printing Co., Ltd. | Vapor deposition mask with metal plate |
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| US9527098B2 (en) | 2012-01-12 | 2016-12-27 | Dai Nippon Printing Co., Ltd. | Vapor deposition mask with metal plate |
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| JP2015017308A (en) * | 2013-07-11 | 2015-01-29 | 大日本印刷株式会社 | Vapor deposition mask, metallic mask with resin layer, and organic semiconductor element manufacturing method |
| JP2015148003A (en) * | 2014-02-07 | 2015-08-20 | 大日本印刷株式会社 | Vapor deposition mask, vapor deposition mask preparation body and manufacturing method of organic semiconductor device |
| JP2015148002A (en) * | 2014-02-07 | 2015-08-20 | 大日本印刷株式会社 | Vapor deposition mask, vapor deposition mask preparation body, and manufacturing method for organic semiconductor device |
| JP2021113362A (en) * | 2019-09-27 | 2021-08-05 | マクセルホールディングス株式会社 | Vapor deposition mask |
| JP7149369B2 (en) | 2019-09-27 | 2022-10-06 | マクセル株式会社 | Evaporation mask |
| JP2022174324A (en) * | 2019-09-27 | 2022-11-22 | マクセル株式会社 | Vapor deposition mask |
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