JP2013069401A5 - - Google Patents
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- Publication number
- JP2013069401A5 JP2013069401A5 JP2012206842A JP2012206842A JP2013069401A5 JP 2013069401 A5 JP2013069401 A5 JP 2013069401A5 JP 2012206842 A JP2012206842 A JP 2012206842A JP 2012206842 A JP2012206842 A JP 2012206842A JP 2013069401 A5 JP2013069401 A5 JP 2013069401A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magnetic free
- decoupling
- sensor
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000151 deposition Methods 0.000 claims description 3
- 230000005415 magnetization Effects 0.000 claims description 2
- 238000005240 physical vapour deposition Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 3
- 125000006850 spacer group Chemical group 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 1
- 230000003068 static effect Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 230000000877 morphologic effect Effects 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/239,010 US9036308B2 (en) | 2011-09-21 | 2011-09-21 | Varyinig morphology in magnetic sensor sub-layers |
| US13/239,010 | 2011-09-21 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013069401A JP2013069401A (ja) | 2013-04-18 |
| JP2013069401A5 true JP2013069401A5 (enExample) | 2013-05-30 |
| JP5833992B2 JP5833992B2 (ja) | 2015-12-16 |
Family
ID=47221938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012206842A Expired - Fee Related JP5833992B2 (ja) | 2011-09-21 | 2012-09-20 | 装置、センサおよびセンサの製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9036308B2 (enExample) |
| EP (1) | EP2573769A1 (enExample) |
| JP (1) | JP5833992B2 (enExample) |
| CN (1) | CN103065644B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8912614B2 (en) * | 2011-11-11 | 2014-12-16 | International Business Machines Corporation | Magnetic tunnel junction devices having magnetic layers formed on composite, obliquely deposited seed layers |
| US8879214B2 (en) * | 2011-12-21 | 2014-11-04 | HGST Netherlands B.V. | Half metal trilayer TMR reader with negative interlayer coupling |
| US9349391B2 (en) | 2013-12-04 | 2016-05-24 | HGST Netherlands B.V. | Controlling magnetic layer anisotropy field by oblique angle static deposition |
| US9437229B2 (en) | 2014-04-09 | 2016-09-06 | Seagate Technology Llc | Isolator element for heat-assisted magnetic recording |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5960725A (ja) | 1982-09-29 | 1984-04-06 | Nec Corp | 磁気抵抗効果ヘツドの製造方法 |
| JPS59107417A (ja) | 1982-12-13 | 1984-06-21 | Hitachi Ltd | 永久磁石バイアス型磁気抵抗効果磁気ヘツド |
| JPH06220609A (ja) | 1992-07-31 | 1994-08-09 | Sony Corp | 磁気抵抗効果膜及びその製造方法並びにそれを用いた磁気抵抗効果素子、磁気抵抗効果型磁気ヘッド |
| US6783635B2 (en) | 1999-12-09 | 2004-08-31 | International Business Machines Corporation | Spin valve sensor free layer structure with a cobalt based layer that promotes magnetic stability and high magnetoresistance |
| US6937446B2 (en) * | 2000-10-20 | 2005-08-30 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system |
| US6847509B2 (en) * | 2001-02-01 | 2005-01-25 | Kabushiki Kaisha Toshiba | Magnetoresistive head and perpendicular magnetic recording-reproducing apparatus |
| US6667862B2 (en) * | 2001-02-20 | 2003-12-23 | Carnegie Mellon University | Magnetoresistive read head having permanent magnet on top of magnetoresistive element |
| US7035062B1 (en) * | 2001-11-29 | 2006-04-25 | Seagate Technology Llc | Structure to achieve sensitivity and linear density in tunneling GMR heads using orthogonal magnetic alignments |
| US6818961B1 (en) | 2003-06-30 | 2004-11-16 | Freescale Semiconductor, Inc. | Oblique deposition to induce magnetic anisotropy for MRAM cells |
| US20050066897A1 (en) | 2003-09-29 | 2005-03-31 | Seagate Technology Llc | System, method and aperture for oblique deposition |
| US7177122B2 (en) * | 2003-10-27 | 2007-02-13 | Seagate Technology Llc | Biasing for tri-layer magnetoresistive sensors |
| US7061731B2 (en) | 2003-11-17 | 2006-06-13 | Seagate Technology Llc | High magnetic anisotropy hard magnetic bias element |
| US6992359B2 (en) * | 2004-02-26 | 2006-01-31 | Grandis, Inc. | Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization |
| US7436637B2 (en) * | 2005-10-05 | 2008-10-14 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetoresistive sensor having an improved pinning structure |
| JP4444241B2 (ja) * | 2005-10-19 | 2010-03-31 | 株式会社東芝 | 磁気抵抗効果素子、磁気ランダムアクセスメモリ、電子カード及び電子装置 |
| US7916429B2 (en) | 2007-07-30 | 2011-03-29 | Tdk Corporation | Magnetic field detecting element having thin stack with a plurality of free layers and thick bias magnetic layer |
| US8099855B2 (en) | 2007-12-16 | 2012-01-24 | Hitachi Global Storage Technologies Netherlands, B.V. | Methods for fabricating perpendicular recording heads with controlled separation regions |
| US8077436B2 (en) * | 2008-03-20 | 2011-12-13 | Tdk Corporation | CPP-type magnetoresistance effect element having three magnetic layers |
| JP2009259354A (ja) | 2008-04-18 | 2009-11-05 | Hitachi Global Storage Technologies Netherlands Bv | 磁気ヘッド及びその製造方法 |
| GB2474167B (en) | 2008-06-20 | 2015-07-29 | Canon Anelva Corp | Method for manufacturing magnetoresistive element |
| JP5529648B2 (ja) | 2009-08-04 | 2014-06-25 | キヤノンアネルバ株式会社 | 磁気センサ積層体、その成膜方法、成膜制御プログラムおよび記録媒体 |
| US8130475B2 (en) * | 2009-10-20 | 2012-03-06 | Tdk Corporation | Method for manufacturing CPP-type thin film magnetic head provided with a pair of magnetically free layers |
-
2011
- 2011-09-21 US US13/239,010 patent/US9036308B2/en active Active
-
2012
- 2012-09-20 EP EP12185310A patent/EP2573769A1/en not_active Withdrawn
- 2012-09-20 JP JP2012206842A patent/JP5833992B2/ja not_active Expired - Fee Related
- 2012-09-21 CN CN201210478643.8A patent/CN103065644B/zh not_active Expired - Fee Related
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