JP2016062638A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2016062638A5 JP2016062638A5 JP2015178092A JP2015178092A JP2016062638A5 JP 2016062638 A5 JP2016062638 A5 JP 2016062638A5 JP 2015178092 A JP2015178092 A JP 2015178092A JP 2015178092 A JP2015178092 A JP 2015178092A JP 2016062638 A5 JP2016062638 A5 JP 2016062638A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- pinned
- stabilization
- afm
- sensor stack
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000006641 stabilisation Effects 0.000 claims description 22
- 238000011105 stabilization Methods 0.000 claims description 22
- 125000006850 spacer group Chemical group 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims 3
- 238000010168 coupling process Methods 0.000 claims 3
- 238000005859 coupling reaction Methods 0.000 claims 3
- 238000000034 method Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/486,607 US9171559B1 (en) | 2014-09-15 | 2014-09-15 | Sensor structure with pinned stabilization layer |
| US14/486,607 | 2014-09-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016062638A JP2016062638A (ja) | 2016-04-25 |
| JP2016062638A5 true JP2016062638A5 (enExample) | 2018-10-25 |
Family
ID=54328279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015178092A Pending JP2016062638A (ja) | 2014-09-15 | 2015-09-10 | 読取器センサ積層体 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US9171559B1 (enExample) |
| JP (1) | JP2016062638A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9653102B1 (en) | 2014-12-19 | 2017-05-16 | Seagate Technology Llc | Data reader with pinned front shield |
| US9922670B1 (en) | 2015-04-30 | 2018-03-20 | Seagate Technology Llc | Method of manufacturing a recessed data reader pinning structure with vertical sidewall |
| US9747933B1 (en) * | 2016-02-16 | 2017-08-29 | Tdk Corporation | Magneto-resistive effect element having side shield integrated with upper shield |
| US10008223B1 (en) * | 2016-02-18 | 2018-06-26 | Seagate Technology Llc | Magnetoresistive sensor with recessed antiferromagnetic layer and stabilization feature |
| US9870790B1 (en) * | 2016-05-18 | 2018-01-16 | Seagate Technology Llc | Recessed AFM stitch interface engineering |
| US10311901B1 (en) | 2018-05-30 | 2019-06-04 | Western Digital Technologies, Inc. | Anisotropy field induced self pinned recessed antiferromagnetic reader |
| US10615887B1 (en) * | 2018-09-24 | 2020-04-07 | Seagate Technology Llc | Mitigation of noise generated by random excitation of asymmetric oscillation modes |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6219208B1 (en) | 1999-06-25 | 2001-04-17 | International Business Machines Corporation | Dual spin valve sensor with self-pinned layer specular reflector |
| US20020006021A1 (en) | 2000-07-13 | 2002-01-17 | Beach Robert S. | Spin valve sensor with an antiferromagnetic layer between two pinned layers |
| US6773515B2 (en) * | 2002-01-16 | 2004-08-10 | Headway Technologies, Inc. | FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures |
| JP2004200245A (ja) | 2002-12-16 | 2004-07-15 | Nec Corp | 磁気抵抗素子及び磁気抵抗素子の製造方法 |
| KR100522943B1 (ko) * | 2003-04-25 | 2005-10-25 | 학교법인고려중앙학원 | 소자 크기 변화에 무관하게 작고 안정한 바이어스 자기장을 갖는 자기 저항 구조 |
| US6961224B2 (en) * | 2003-09-24 | 2005-11-01 | Hitachi Global Storage Technologies Netherlands, B.V. | GMR enhancing seed layer for self pinned spin valves |
| US7145755B2 (en) | 2003-09-30 | 2006-12-05 | Hitachi Global Storage Technologies Netherlands B.V. | Spin valve sensor having one of two AP pinned layers made of cobalt |
| US7256971B2 (en) * | 2004-03-09 | 2007-08-14 | Headway Technologies, Inc. | Process and structure to fabricate CPP spin valve heads for ultra-high recording density |
| JP4694332B2 (ja) * | 2005-09-29 | 2011-06-08 | ヒタチグローバルストレージテクノロジーズネザーランドビーブイ | 磁気抵抗効果型磁気ヘッド及び複合型磁気ヘッド |
| US7672089B2 (en) * | 2006-12-15 | 2010-03-02 | Hitachi Global Storage Technologies Netherlands B.V. | Current-perpendicular-to-plane sensor with dual keeper layers |
| JP5012910B2 (ja) * | 2008-01-30 | 2012-08-29 | 富士通株式会社 | 磁気抵抗効果素子、磁気ヘッド、および、情報記憶装置 |
| US8107202B2 (en) * | 2008-04-11 | 2012-01-31 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetoresistive sensor with novel pinned layer structure |
| WO2011028185A1 (en) | 2009-09-07 | 2011-03-10 | Agency For Science, Technology And Research | A sensor arrangement |
| WO2012082998A1 (en) | 2010-12-15 | 2012-06-21 | Seagate Technology Llc | Magnetic sensor seed layer with magnetic and nonmagnetic layers |
| US8711528B1 (en) * | 2012-06-29 | 2014-04-29 | Western Digital (Fremont), Llc | Tunnel magnetoresistance read head with narrow shield-to-shield spacing |
| US20140037991A1 (en) | 2012-07-31 | 2014-02-06 | International Business Machines Corporation | Magnetic random access memory with synthetic antiferromagnetic storage layers |
| US20140268417A1 (en) | 2013-03-16 | 2014-09-18 | Seagate Technology Llc | Bottom shield stabilized magnetic seed layer |
-
2014
- 2014-09-15 US US14/486,607 patent/US9171559B1/en active Active
-
2015
- 2015-09-10 JP JP2015178092A patent/JP2016062638A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2016062638A5 (enExample) | ||
| CN108352447B (zh) | 于高温退火后保持高矫顽力的具有垂直磁各向异性的磁性组件 | |
| JP5739833B2 (ja) | データ検知素子、磁気素子および方法 | |
| KR102265800B1 (ko) | 자성 콘택들을 갖는 스핀-전달 토크 메모리(sttm) 디바이스들 | |
| JP2015002352A5 (enExample) | ||
| KR101496141B1 (ko) | 에어 베어링 표면으로부터 떨어진 바이어싱 구조를 가지는 자기 엘리먼트 | |
| US8921961B2 (en) | Storage element for STT MRAM applications | |
| JP2017076768A5 (ja) | 酸化物の作製方法 | |
| TW201613072A (en) | Resistive memory architecture and devices | |
| US9412401B2 (en) | Data reader magnetic shield with CoFeNiB material | |
| JP2015061952A5 (enExample) | ||
| JP2009111375A5 (enExample) | ||
| JP2016505220A5 (enExample) | ||
| JP2015002281A5 (enExample) | ||
| US9203015B2 (en) | Magnetic storage device | |
| HK1209230A1 (en) | Electrically conductive underlayer to grow fept granular media with (001) texture on glass substrates | |
| TWI632711B (zh) | Magnetoresistance effect element | |
| JP2012230751A5 (enExample) | ||
| TW201304131A (zh) | 磁阻隨機存取記憶體單元及其製造方法 | |
| JP2014149905A5 (enExample) | ||
| JP2015079945A5 (enExample) | ||
| JP2015028832A5 (enExample) | ||
| US8877522B2 (en) | Method of manufacturing a magnetoresistive-based device with via integration | |
| US20170194556A1 (en) | In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers | |
| JP2012113808A5 (enExample) |