JP2016062638A - 読取器センサ積層体 - Google Patents

読取器センサ積層体 Download PDF

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Publication number
JP2016062638A
JP2016062638A JP2015178092A JP2015178092A JP2016062638A JP 2016062638 A JP2016062638 A JP 2016062638A JP 2015178092 A JP2015178092 A JP 2015178092A JP 2015178092 A JP2015178092 A JP 2015178092A JP 2016062638 A JP2016062638 A JP 2016062638A
Authority
JP
Japan
Prior art keywords
layer
pinned
stabilization
afm
sensor stack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015178092A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016062638A5 (enExample
Inventor
コンスタンティン・ニコラエフ
Nikolaev Konstantin
タラス・ポヒル
Pokhil Taras
アンドレイ・スタンキーウィッツ
Stankiewicz Andrzej
モハメド・パトワリ
Patwari Mohammed
エリック・シングルトン
Singleton Eric
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seagate Technology LLC
Original Assignee
Seagate Technology LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seagate Technology LLC filed Critical Seagate Technology LLC
Publication of JP2016062638A publication Critical patent/JP2016062638A/ja
Publication of JP2016062638A5 publication Critical patent/JP2016062638A5/ja
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
    • G11B5/3932—Magnetic biasing films
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3218—Exchange coupling of magnetic films via an antiferromagnetic interface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/933—Spintronics or quantum computing
    • Y10S977/934—Giant magnetoresistance, GMR
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)
JP2015178092A 2014-09-15 2015-09-10 読取器センサ積層体 Pending JP2016062638A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/486,607 US9171559B1 (en) 2014-09-15 2014-09-15 Sensor structure with pinned stabilization layer
US14/486,607 2014-09-15

Publications (2)

Publication Number Publication Date
JP2016062638A true JP2016062638A (ja) 2016-04-25
JP2016062638A5 JP2016062638A5 (enExample) 2018-10-25

Family

ID=54328279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015178092A Pending JP2016062638A (ja) 2014-09-15 2015-09-10 読取器センサ積層体

Country Status (2)

Country Link
US (1) US9171559B1 (enExample)
JP (1) JP2016062638A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9653102B1 (en) 2014-12-19 2017-05-16 Seagate Technology Llc Data reader with pinned front shield
US9922670B1 (en) 2015-04-30 2018-03-20 Seagate Technology Llc Method of manufacturing a recessed data reader pinning structure with vertical sidewall
US9747933B1 (en) * 2016-02-16 2017-08-29 Tdk Corporation Magneto-resistive effect element having side shield integrated with upper shield
US10008223B1 (en) * 2016-02-18 2018-06-26 Seagate Technology Llc Magnetoresistive sensor with recessed antiferromagnetic layer and stabilization feature
US9870790B1 (en) * 2016-05-18 2018-01-16 Seagate Technology Llc Recessed AFM stitch interface engineering
US10311901B1 (en) 2018-05-30 2019-06-04 Western Digital Technologies, Inc. Anisotropy field induced self pinned recessed antiferromagnetic reader
US10615887B1 (en) * 2018-09-24 2020-04-07 Seagate Technology Llc Mitigation of noise generated by random excitation of asymmetric oscillation modes

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003264325A (ja) * 2002-01-16 2003-09-19 Headway Technologies Inc ボトムスピンバルブ磁気抵抗効果センサ素子およびその製造方法
JP2004327947A (ja) * 2003-04-25 2004-11-18 Korea Univ Foundation 素子のサイズ変化に関係なく小さく安定的なバイアス磁場を有する磁気抵抗素子
JP2005260226A (ja) * 2004-03-09 2005-09-22 Headway Technologies Inc 直交電流型スピンバルブ構造およびその製造方法、ならびに直交電流型デュアルスピンバルブ構造およびその製造方法
JP2007095186A (ja) * 2005-09-29 2007-04-12 Hitachi Global Storage Technologies Netherlands Bv 磁気抵抗効果型磁気ヘッド及び複合型磁気ヘッド
WO2009096012A1 (ja) * 2008-01-30 2009-08-06 Fujitsu Limited 磁気抵抗効果素子、磁気ヘッド、および、情報記憶装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6219208B1 (en) 1999-06-25 2001-04-17 International Business Machines Corporation Dual spin valve sensor with self-pinned layer specular reflector
US20020006021A1 (en) 2000-07-13 2002-01-17 Beach Robert S. Spin valve sensor with an antiferromagnetic layer between two pinned layers
JP2004200245A (ja) 2002-12-16 2004-07-15 Nec Corp 磁気抵抗素子及び磁気抵抗素子の製造方法
US6961224B2 (en) * 2003-09-24 2005-11-01 Hitachi Global Storage Technologies Netherlands, B.V. GMR enhancing seed layer for self pinned spin valves
US7145755B2 (en) 2003-09-30 2006-12-05 Hitachi Global Storage Technologies Netherlands B.V. Spin valve sensor having one of two AP pinned layers made of cobalt
US7672089B2 (en) * 2006-12-15 2010-03-02 Hitachi Global Storage Technologies Netherlands B.V. Current-perpendicular-to-plane sensor with dual keeper layers
US8107202B2 (en) * 2008-04-11 2012-01-31 Hitachi Global Storage Technologies Netherlands B.V. Magnetoresistive sensor with novel pinned layer structure
WO2011028185A1 (en) 2009-09-07 2011-03-10 Agency For Science, Technology And Research A sensor arrangement
WO2012082998A1 (en) 2010-12-15 2012-06-21 Seagate Technology Llc Magnetic sensor seed layer with magnetic and nonmagnetic layers
US8711528B1 (en) * 2012-06-29 2014-04-29 Western Digital (Fremont), Llc Tunnel magnetoresistance read head with narrow shield-to-shield spacing
US20140037991A1 (en) 2012-07-31 2014-02-06 International Business Machines Corporation Magnetic random access memory with synthetic antiferromagnetic storage layers
US20140268417A1 (en) 2013-03-16 2014-09-18 Seagate Technology Llc Bottom shield stabilized magnetic seed layer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003264325A (ja) * 2002-01-16 2003-09-19 Headway Technologies Inc ボトムスピンバルブ磁気抵抗効果センサ素子およびその製造方法
JP2004327947A (ja) * 2003-04-25 2004-11-18 Korea Univ Foundation 素子のサイズ変化に関係なく小さく安定的なバイアス磁場を有する磁気抵抗素子
JP2005260226A (ja) * 2004-03-09 2005-09-22 Headway Technologies Inc 直交電流型スピンバルブ構造およびその製造方法、ならびに直交電流型デュアルスピンバルブ構造およびその製造方法
JP2007095186A (ja) * 2005-09-29 2007-04-12 Hitachi Global Storage Technologies Netherlands Bv 磁気抵抗効果型磁気ヘッド及び複合型磁気ヘッド
WO2009096012A1 (ja) * 2008-01-30 2009-08-06 Fujitsu Limited 磁気抵抗効果素子、磁気ヘッド、および、情報記憶装置

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US9171559B1 (en) 2015-10-27

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