JP2013058548A - Semiconductor chip bonded body manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor chip bonded body capable of facilitating recognition of a contrast image of bump electrodes and/or alignment marks taken by a camera to enable bonding with high accuracy.SOLUTION: A semiconductor chip bonded body manufacturing method comprises the steps of: preparing a semiconductor chip including bump electrodes, or bump electrodes and alignment marks, in which an encapsulation resin layer containing a resin component serving as a matrix and a solid component insoluble to the resin component is provided so as to cover the bump electrodes and/or the alignment marks; irradiating light including a wavelength of 600 nm and over so as to tilt an optical axis of the light with respect to the encapsulation resin layer for causing a camera to recognize a contrast image of the bump electrodes and/or the alignment marks; adjusting a position of the semiconductor chip with respect to a substrate serving as a bonding object or another semiconductor chip; and bonding the bump electrodes of the semiconductor chip with an electrode part of the substrate or of the other semiconductor chip and hardening the encapsulation resin layer.

Description

The present invention relates to a method for manufacturing a semiconductor chip assembly that facilitates recognition of a contrast image of a protruding electrode and / or alignment mark by a camera and enables high-precision bonding.

In recent years, flip-chip mounting using a semiconductor chip having protruding electrodes (bumps) made of solder or the like has been widely used in order to cope with miniaturization and high integration of semiconductor devices that are becoming more and more advanced. In particular, flip-chip mounting in which a sealing resin layer is provided in advance on a surface of a semiconductor chip having protruding electrodes and bonding of the protruding electrodes and resin sealing are performed at the same time is regarded as important.

In such flip-chip mounting, the projecting electrodes and the alignment marks provided on the semiconductor chip are recognized by the camera through the sealing resin layer, and the position adjustment (alignment) between the semiconductor chip and the bonded body is performed. Therefore, if the sealing resin layer is not sufficiently transparent, there is a problem that the camera cannot sufficiently recognize the protruding electrodes and the alignment marks.

In order to solve such a problem, for example, in Patent Document 1, in a method for manufacturing a semiconductor device in which an insulating resin layer is provided in advance on a semiconductor chip, the insulating resin layer has a visible light transmittance of 10% or more. It is preferable that the position of the protruding electrode can be confirmed by a normal visible light camera or the like in the position adjustment step. Further, in Patent Document 2, when the maximum light transmittance at a wavelength of 350 to 900 nm of the adhesive composition for semiconductor is 70% or more, the alignment mark recognition at the time of flip-chip mounting becomes good, so that the circuit is highly accurate. It describes that the electrode pad on the substrate and the semiconductor chip can be bonded.
However, if the transparency of the sealing resin layer is to be ensured, the free design of the composition is hindered. For example, the addition of an inorganic filler lowers the coefficient of linear expansion or forms a thick sealing resin layer. It becomes difficult.

On the other hand, for example, Patent Document 3 discloses a position detection apparatus for a wafer and an exposure mask, which illuminates illumination light along an optical axis oblique to the exposure surface, and a wafer mark and a mask mark. A position detection device having an observation optical system having a light receiving surface that forms an image of scattered light from the light is described. Patent Document 3 describes that according to the position detection device described in the same document, the contrast between the image and the background can be increased and position detection can be easily performed.

JP 2009-260220 A International Publication No. 06/132165 Pamphlet Japanese Patent Application Laid-Open No. 11-243048

However, the position detection device described in Patent Document 3 is a device that performs position detection on a wafer on which a sealing resin layer is not provided. About what kind of contrivance can be improved if the sealing resin layer is provided in advance, and the semiconductor chip or wafer in which the protruding electrode and the alignment mark are covered with the sealing resin layer can be improved, In Patent Document 3, it is not studied.

An object of the present invention is to provide a method for manufacturing a semiconductor chip assembly that facilitates recognition of a contrast image of a protruding electrode and / or an alignment mark by a camera and enables high-precision bonding.

The present invention provides a projecting electrode or a sealing resin layer having a projecting electrode and an alignment mark and containing a resin component as a matrix and a solid component insoluble in the resin component. A step of preparing a semiconductor chip provided so as to cover the alignment mark; and a light having a wavelength of 600 nm or more is applied to the sealing resin layer so that an optical axis is inclined, and the protruding electrode And / or a step of recognizing the contrast image of the alignment mark with a camera, a step of adjusting the position of the semiconductor chip with respect to a substrate or other semiconductor chip as a bonded body, and the protruding shape of the semiconductor chip. A step of bonding the electrode and the electrode portion of the substrate or other semiconductor chip and curing the sealing resin layer. It is a manufacturing method of the flop assembly.
The present invention is described in detail below.

The present inventor has found that the projection electrode and the alignment mark cannot be sufficiently recognized by the camera, particularly when the sealing resin layer contains a solid component such as a solid curing agent, a solid curing accelerator, and an inorganic filler. It was found that alignment could not be performed accurately and the yield decreased.
The present inventor has disclosed a method of manufacturing a semiconductor chip assembly obtained by bonding a protruding chip, or a semiconductor chip having a protruding electrode and an alignment mark, in which a sealing resin layer is provided in advance. On the other hand, the sealing resin layer contains a solid component by irradiating light containing a specific wavelength so that the optical axis is inclined and causing the camera to recognize the contrast image of the protruding electrode and / or alignment mark. Even in this case, the present inventors have found that it is easy to recognize a contrast image and can perform high-precision joining, and have completed the present invention. According to such a method, the degree of freedom in designing the composition of the sealing resin layer is greatly expanded.

In the method for producing a semiconductor chip bonded body of the present invention, first, a sealing resin having a protruding electrode or a protruding electrode and an alignment mark and containing a resin component as a matrix and a solid component insoluble in the resin component A step of preparing a semiconductor chip provided with a layer covering the protruding electrode and / or the alignment mark is performed.

The sealing resin layer contains a resin component as a matrix and a solid component insoluble in the resin component.
Examples of the resin component include a curable compound described later, a polymer compound having a functional group capable of reacting with the curable compound, and the like. Examples of the solid component include a solid curing agent, a solid curing accelerator, and an inorganic filler described later. In the present specification, the solid component insoluble in the resin component means a blended component that does not dissolve in the resin component as a matrix in the sealing resin layer and exists in a solid state.

The sealing resin layer preferably contains a curable compound and a curing agent, and the curability of the sealing resin layer can be controlled by a combination of the curable compound and the curing agent.
Examples of the curable compounds include urea compounds, melamine compounds, phenol compounds, resorcinol compounds, epoxy compounds, acrylic compounds, polyester compounds, polyamide compounds, polybenzimidazole resins, diallyl phthalate compounds, xylene compounds, alkyl-benzene compounds, and epoxies. Examples thereof include thermosetting compounds such as acrylate compounds, silicon resins, urethane compounds, episulfide compounds, and bismaleimide compounds. Among these, an epoxy compound or an episulfide compound is preferable because the obtained semiconductor chip assembly is excellent in reliability and bonding strength.

The epoxy compound is not particularly limited, and examples thereof include bisphenol type epoxy compounds such as bisphenol A type, bisphenol F type, bisphenol AD type, and bisphenol S type, novolac type epoxy compounds such as phenol novolak type and cresol novolak type, and resorcinol type epoxy. Compounds, aromatic epoxy compounds such as trisphenolmethane triglycidyl ether, naphthalene type epoxy compounds, fluorene type epoxy compounds, dicyclopentadiene type epoxy compounds, polyether modified epoxy compounds, benzophenone type epoxy compounds, aniline type epoxy compounds, NBR modified Examples thereof include epoxy compounds, CTBN-modified epoxy compounds, and hydrogenated products thereof. Among these, a benzophenone type epoxy compound is preferable because quick curability is easily obtained. These epoxy compounds may be used independently and 2 or more types may be used together.

Among the above bisphenol F-type epoxy compounds, as commercial products, for example, EXA-830-LVP, EXA-830-CRP (manufactured by DIC) and the like can be mentioned.
Among the resorcinol type epoxy compounds, as a commercially available product, for example, EX-201 (manufactured by Nagase ChemteX Corporation) and the like can be mentioned.
Among the polyether-modified epoxy compounds, as commercial products, for example, EX-931 (manufactured by Nagase ChemteX), EXA-4850-150 (manufactured by DIC), EP-4005 (manufactured by ADEKA) and the like can be mentioned.

The episulfide compound is not particularly limited as long as it has an episulfide group, and examples thereof include compounds in which the oxygen atom of the epoxy group of the epoxy compound is substituted with a sulfur atom.
Specific examples of the episulfide compound include bisphenol type episulfide compounds (compounds in which the oxygen atom of the epoxy group of the bisphenol type epoxy compound is substituted with a sulfur atom), hydrogenated bisphenol type episulfide compounds, dicyclopentadiene type episulfide compounds, and biphenyl. Type episulfide compound, phenol novolak type episulfide compound, fluorene type episulfide compound, polyether modified episulfide compound, butadiene modified episulfide compound, triazine episulfide compound, naphthalene type episulfide compound and the like. Of these, naphthalene type episulfide compounds are preferred. These episulfide compounds may be used independently and 2 or more types may be used together.
The episulfide compound is easily synthesized from an epoxy compound using a sulfurizing agent such as potassium thiocyanate or thiourea. The substitution from the oxygen atom to the sulfur atom may be in at least a part of the epoxy group, and the oxygen atoms of all the epoxy groups may be substituted with sulfur atoms.

Among the above-mentioned episulfide compounds, YL-7007 (hydrogenated bisphenol A type episulfide compound, manufactured by Japan Epoxy Resin Co., Ltd.) and the like can be mentioned as commercially available products.

When the sealing resin layer contains the episulfide compound, the compounding amount of the episulfide compound is not particularly limited, but a preferable lower limit in the entire sealing resin layer is 3% by weight, and a preferable upper limit is 12% by weight. A preferred lower limit is 6% by weight and a more preferred upper limit is 9% by weight.

The sealing resin layer preferably contains a polymer compound having a functional group capable of reacting with the curable compound (hereinafter also simply referred to as a polymer compound having a functional group capable of reacting). By containing the high molecular compound which has the said functional group which can react, the sealing resin layer obtained improves the joining reliability at the time of the distortion | strain by heat | fever generate | occur | producing.

When an epoxy compound is used as the curable compound as the polymer compound having a reactive functional group, for example, a polymer compound having an amino group, a urethane group, an imide group, a hydroxyl group, a carboxyl group, an epoxy group, or the like. Etc. Among these, a polymer compound having an epoxy group is preferable. By containing the high molecular compound which has the said epoxy group, the hardened | cured material of the obtained sealing resin layer expresses the outstanding flexibility. That is, the cured product of the sealing resin layer is excellent in mechanical strength, heat resistance and moisture resistance derived from the epoxy compound as the curable compound, and excellent in flexibility derived from the polymer compound having the epoxy group. It can be combined with flexibility, is excellent in cold and heat cycle resistance, solder reflow resistance and dimensional stability, and exhibits high adhesion reliability and high conduction reliability.

The polymer compound having an epoxy group is not particularly limited as long as it is a polymer compound having an epoxy group at a terminal and / or side chain (pendant position). For example, an epoxy group-containing acrylic rubber, an epoxy group-containing butadiene rubber Bisphenol type high molecular weight epoxy compound, epoxy group-containing phenoxy resin, epoxy group-containing acrylic resin, epoxy group-containing urethane resin, epoxy group-containing polyester resin and the like. Among them, an epoxy group-containing acrylic resin is preferable because it can contain a large amount of epoxy groups, and the cured product of the resulting sealing resin layer has better mechanical strength and heat resistance. These polymer compounds having an epoxy group may be used alone or in combination of two or more.

When the polymer compound having an epoxy group, particularly an epoxy group-containing acrylic resin, is used as the polymer compound having a functional group capable of reacting, the preferred lower limit of the weight average molecular weight of the polymer compound having an epoxy group is 10,000. It is. If the weight average molecular weight of the polymer compound having an epoxy group is less than 10,000, the flexibility of the cured product of the resulting sealing resin layer may not be sufficiently improved.

When the polymer compound having an epoxy group, particularly an epoxy group-containing acrylic resin is used as the polymer compound having a functional group capable of reacting, the preferred lower limit of the epoxy equivalent of the polymer compound having an epoxy group is preferably 200. The upper limit is 1000. When the epoxy equivalent of the polymer compound having an epoxy group is less than 200, the flexibility of the cured product of the resulting sealing resin layer may not be sufficiently improved. When the epoxy equivalent of the polymer compound having an epoxy group exceeds 1000, the mechanical strength and heat resistance of the cured product of the resulting sealing resin layer may be lowered.

When the sealing resin layer contains a polymer compound having a functional group capable of reacting, the amount of the polymer compound having a functional group capable of reacting is not particularly limited, but is based on 100 parts by weight of the curable compound. A preferred lower limit is 1 part by weight and a preferred upper limit is 30 parts by weight. When the blending amount of the polymer compound having a functional group capable of reacting is less than 1 part by weight, the obtained sealing resin layer may have reduced bonding reliability when strain due to heat occurs. When the blending amount of the polymer compound having a functional group capable of reacting exceeds 30 parts by weight, the cured product of the obtained sealing resin layer may have reduced mechanical strength, heat resistance, and moisture resistance.

The said hardening | curing agent is not specifically limited, A conventionally well-known hardening | curing agent can be suitably selected according to the said sclerosing | hardenable compound. When an epoxy compound is used as the curable compound, examples of the curing agent include latent heat-curing acid anhydride-based curing agents such as trialkyltetrahydrophthalic anhydride, phenol-based curing agents, amine-based curing agents, and dicyandiamide. Curable hardeners, cationic catalyst-type hardeners, and microcapsule-type hardeners thereof. These hardening | curing agents may be used independently and 2 or more types may be used together. Among these curing agents, a microcapsule type curing agent can be used as the solid curing agent.

When the sealing resin layer contains the curing agent, the blending amount of the curing agent is not particularly limited. However, when a curing agent that reacts in an equivalent amount with the functional group of the curable compound is used, the functionality of the curable compound is not limited. It is preferable that it is 0.6-1 equivalent with respect to base amount. Moreover, when using the hardening | curing agent which functions as a catalyst, as for the compounding quantity of the said hardening | curing agent, a preferable minimum is 1 weight part with respect to 100 weight part of said curable compounds, and a preferable upper limit is 20 weight part.

The sealing resin layer preferably contains a curing accelerator in addition to the curing agent for the purpose of adjusting the curing rate or the curing temperature.
The said hardening accelerator is not specifically limited, For example, an imidazole type hardening accelerator, a tertiary amine type hardening accelerator, these microcapsule type hardening accelerators, etc. are mentioned. Of these, imidazole-based curing accelerators are preferable because the curing rate can be easily controlled. These hardening accelerators may be used independently and 2 or more types may be used together.

The imidazole-based curing accelerator is not particularly limited. For example, 1-cyanoethyl-2-phenylimidazole in which the 1-position of imidazole is protected with a cyanoethyl group, and an imidazole-based curing accelerator whose basicity is protected with isocyanuric acid (trade name “ 2MA-OK ", manufactured by Shikoku Kasei Kogyo Co., Ltd.), 2MZ, 2MZ-P, 2PZ, 2PZ-PW, 2P4MZ, C11Z-CNS, 2PZ-CNS, 2PZCNS-PW, 2MZ-A, 2MZA-PW, C11Z- A, 2E4MZ-A, 2MA-OK, 2MAOK-PW, 2PZ-OK, 2MZ-OK, 2PHZ, 2PHZ-PW, 2P4MHZ, 2P4MHZ-PW, 2E4MZ · BIS, VT, VT-OK, MAVT, MAVT-OK ( As mentioned above, Shikoku Chemicals Co., Ltd.) etc. are mentioned. These imidazole type hardening accelerators may be used independently and 2 or more types may be used together.
Among these curing accelerators, solid-state curing accelerators include room temperature solid and incompatible curing accelerators and microcapsule type curing accelerators.

The compounding quantity of the said hardening accelerator is not specifically limited, A preferable minimum is 1 weight part with respect to 100 weight part of said curable compounds, and a preferable upper limit is 10 weight part.

When an epoxy compound is used as the curable compound and the curing agent and the curing accelerator are used in combination, the blending amount of the curing agent used is the theoretically required equivalent to the epoxy group in the epoxy compound to be used. The following is preferable. When the blending amount of the curing agent exceeds the theoretically required equivalent, chlorine ions may be easily eluted by moisture from a cured product obtained by curing the obtained sealing resin layer. That is, when the curing agent is excessive, for example, when the elution component is extracted with hot water from the cured product of the obtained sealing resin layer, the pH of the extracted water becomes about 4 to 5, so that the epoxy compound is chlorineated. A large amount of ions may elute. Therefore, it is preferable that the pH of pure water after 1 g of the cured product of the resulting sealing resin layer is immersed in 10 g of pure water at 100 ° C. for 2 hours is 6 to 8, and the pH is 6.5 to 7.5. It is more preferable that

The sealing resin layer may contain a reactive diluent in order to reduce the viscosity of the sealing resin layer.
The reactive diluent preferably has an epoxy group, and the preferable lower limit of the number of epoxy groups in one molecule is 2, and the preferable upper limit is 4. If the number of epoxy groups in one molecule is less than 2, sufficient heat resistance may not be exhibited after the sealing resin layer is cured. If the number of epoxy groups in one molecule exceeds 4, distortion due to curing may occur, or uncured epoxy groups may remain, which may result in poor bonding strength or poor bonding due to repeated thermal stress. May occur. A more preferable upper limit of the number of epoxy groups in one molecule of the reactive diluent is 3.
The reactive diluent preferably has an aromatic ring and / or a dicyclopentadiene structure.

The preferable upper limit of the weight loss at 120 ° C. and the weight loss at 150 ° C. of the reactive diluent is 1%. When the weight reduction amount at 120 ° C. and the weight reduction amount at 150 ° C. exceed 1%, unreacted substances are volatilized during or after curing of the resulting sealing resin layer, and productivity or the obtained semiconductor chip The performance of the joined body may be adversely affected.
The reactive diluent preferably has a lower curing start temperature and a higher curing rate than the curable compound.

When the said sealing resin layer contains the said reactive diluent, the minimum with the preferable compounding quantity of the said reactive diluent in the said whole sealing resin layer is 1 weight%, and a preferable upper limit is 20 weight%. When the compounding amount of the reactive diluent is outside the above range, the viscosity of the resulting sealing resin may not be sufficiently reduced.

The sealing resin layer may further contain a thixotropic agent.
By containing the thixotropy imparting agent, the viscosity behavior of the sealing resin layer can be adjusted to be optimal for flip chip mounting.

The thixotropy imparting agent is not particularly limited, and examples thereof include fine metal particles, calcium carbonate, fumed silica, inorganic fine particles such as aluminum oxide, boron nitride, aluminum nitride, and aluminum borate. Of these, fumed silica is preferable.
The thixotropy imparting agent may be subjected to a surface treatment as necessary. The thixotropy imparting agent subjected to the surface treatment is not particularly limited, but particles having a hydrophobic group on the surface are preferable, and specific examples include fumed silica having a hydrophobic surface.

When the thixotropy-imparting agent is in the form of particles, the average particle size of the particulate thixotropy-imparting agent is not particularly limited, but a preferred upper limit is 1 μm. When the average particle diameter of the particulate thixotropy-imparting agent exceeds 1 μm, the resulting sealing resin layer may not exhibit desired thixotropic properties.

The blending amount of the thixotropy imparting agent in the entire sealing resin layer is not particularly limited. However, when the thixotropy imparting agent is not surface-treated, a preferable lower limit is 0.5% by weight and a preferable upper limit is 20% by weight. It is. If the blending amount of the thixotropy-imparting agent is less than 0.5% by weight, sufficient thixotropy may not be imparted to the resulting sealing resin layer. When the blending amount of the thixotropy-imparting agent exceeds 20% by weight, the exclusion property of the sealing resin layer may be lowered when a semiconductor chip bonded body is manufactured. A more preferable lower limit of the amount of the thixotropy-imparting agent is 3% by weight, and a more preferable upper limit is 10% by weight.

The sealing resin layer preferably further contains an inorganic filler.
Examples of the inorganic filler include surface-treated silica filler. Although the said surface-treated silica filler is not specifically limited, The silica filler surface-treated with the phenylsilane coupling agent is preferable.

When the sealing resin layer contains the inorganic filler, the blending amount of the inorganic filler in the sealing resin layer is not particularly limited, but a preferable lower limit with respect to 100 parts by weight of the curable compound is preferably 30 parts by weight. The upper limit is 400 parts by weight. When the blending amount of the inorganic filler is less than 30 parts by weight, the obtained sealing resin layer may not be able to maintain sufficient reliability. When the compounding quantity of the said inorganic filler exceeds 400 weight part, the viscosity of the sealing resin layer obtained may become high too much.

The sealing resin layer may contain an inorganic ion exchanger as necessary.

The said sealing resin layer may contain other additives, such as adhesive imparting agents, such as a bleed inhibitor and an imidazole silane coupling agent, as needed.

As a method of preparing a semiconductor chip provided with the sealing resin layer, for example, a method of dicing the wafer into individual semiconductor chips after providing the sealing resin layer on the wafer, or dicing the wafer into individual semiconductor chips For example, a method of providing the sealing resin layer on the semiconductor chip may be used.
The method of providing the sealing resin layer on the wafer or semiconductor chip is not particularly limited. For example, a method of applying a paste-like sealing resin composition to the wafer or semiconductor chip by screen printing or the like, a sheet-like sealing resin composition For example, a method of attaching an object to a wafer or a semiconductor chip can be used. When the sheet-shaped sealing resin composition is bonded to a wafer or a semiconductor chip, the sheet-shaped material having the sealing resin layer and the substrate is used, and the sheet-shaped material is bonded to the wafer. After the back grinding of the wafer, the wafer may be diced into individual semiconductor chips after peeling the substrate and dicing the wafer.

In the semiconductor chip provided with the sealing resin layer, the sealing resin layer covers the protruding electrodes and / or alignment marks of the semiconductor chip.
In the method for manufacturing a semiconductor chip assembly of the present invention, in the process described later, the sealing resin layer is irradiated with light having a specific wavelength so that the optical axis is oblique, and the protruding electrode and / or Alternatively, by recognizing the contrast image of the alignment mark with a camera, even when the sealing resin layer contains a solid component, the contrast image can be easily recognized and high-precision bonding can be performed.

In the method for manufacturing a semiconductor chip bonded body according to the present invention, the optical axis is then obliquely applied to the sealing resin layer with light including a wavelength of 600 nm or more (visible light (red light) region to near infrared region). And a step of causing the camera to recognize a contrast image of the protruding electrode and / or the alignment mark.

According to the above process, the contrast image of the protruding electrode and / or the alignment mark can be clearly recognized by the camera. Therefore, according to the manufacturing method of the semiconductor chip bonded body of the present invention, the alignment property can be improved and highly accurate bonding can be performed.
This is because (1) the wavelength of 600 nm or more is a wavelength at which resin components such as epoxy compounds and bismaleimide compounds contained in the sealing resin layer are difficult to absorb, and (2) such light is sealed above By irradiating the resin layer so that the optical axis is oblique, it is possible to suppress scattered light due to the solid component contained in the sealing resin layer, and by the synergistic effect of these (1) and (2) It is presumed that the projecting electrode and / or the alignment mark covered with the sealing resin layer can be efficiently irradiated with light having a wavelength of 600 nm or more.
When the light includes only a wavelength of less than 600 nm, the contrast image of the protruding electrode and / or the alignment mark cannot be clearly recognized by the camera. The preferable lower limit of the wavelength is 700 nm, and the preferable upper limit is 900 nm.

In this specification, irradiating the sealing resin layer with light so that the optical axis is oblique means, for example, that the incident angle is about 45 to 60 ° with respect to the sealing resin layer. Means irradiation.

Examples of the method for adjusting the wavelength to the above-described range include a method for adjusting the wavelength of white light with a filter, and a method for using a monochromatic light source that outputs a wavelength in the above-described range.
Further, an apparatus that irradiates the sealing resin layer with light having a wavelength in the above-described range so that an optical axis is inclined, and recognizes a contrast image of the protruding electrode and / or the alignment mark with a camera. For example, an apparatus in which a light source device in which the position and wavelength of a light source are adjusted is combined with a normal flip chip bonder with an alignment camera can be used.

In the method for manufacturing a semiconductor chip bonded body according to the present invention, a step of adjusting the position of the semiconductor chip is then performed with respect to a substrate or other semiconductor chip as a bonded body.
The position adjustment is performed based on the recognition of the contrast image of the protruding electrode and / or the alignment mark by the camera in the above-described process.

In the method of manufacturing a semiconductor chip bonded body according to the present invention, the step of bonding the protruding electrode of the semiconductor chip and the electrode portion of the substrate or other semiconductor chip and then curing the sealing resin layer is then performed. Do.
In the step, after contacting the protruding electrode of the semiconductor chip and the electrode portion of the substrate or other semiconductor chip, an electrode material constituting at least one of the protruding electrode and the electrode portion is used. By melting, the projecting electrode and the electrode portion are joined and the sealing resin layer is cured. In the method of manufacturing a semiconductor chip assembly according to the present invention, the contrast image of the protruding electrode and / or the alignment mark can be clearly recognized by the camera in the above-described process, so that the alignment property is improved and the accuracy is high. Bonding can be performed.

Conditions such as temperature, load, time and the like when contacting the protruding electrode and the electrode part are not particularly limited as long as they do not impair the effects of the present invention. For example, 120 to 220 ° C., 1 to 30N, 0.1-60 seconds, etc. are mentioned. If the load is too low, the protruding electrode and the electrode part may not contact each other. If the load is too high, the protruding electrode may be crushed so that it contacts the adjacent protruding electrode and may short-circuit.
For example, a flip chip bonder can be used when the protruding electrode and the electrode portion are brought into contact with each other.

Conditions such as temperature, load, time, etc. when joining the protruding electrode and the electrode part are not particularly limited as long as they do not impair the effects of the present invention. For example, 230 to 300 ° C., 1 to 30N, 0.1-60 seconds, etc. are mentioned. In addition, what is necessary is just to heat more than solder melting temperature, when the electrode material which comprises at least one of the said protruding electrode and the said electrode part is a solder.
When joining the protruding electrode and the electrode part, a flip chip bonder may be used, or other heating means such as a reflow furnace may be used.

ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the semiconductor chip assembly which makes it easy to recognize the contrast image of the protruding electrode and / or alignment mark by a camera, and can perform highly accurate joining can be provided.

Examples of the present invention will be described in more detail with reference to the following examples, but the present invention is not limited to these examples. The details of the materials used in the examples and comparative examples are as follows.

(Epoxy compound)
Biphenyl type epoxy resin (trade name “YX-4000”, manufactured by Japan Epoxy Resin Co., Ltd.)
Bisphenol A type epoxy resin (trade name “1004AF”, manufactured by Japan Epoxy Resin Co., Ltd.)

(Polymer compound having a functional group capable of reacting)
Glycidyl group-containing acrylic resin (weight average molecular weight 20,000, trade name “G-0250SP”, manufactured by NOF Corporation)

(Curing agent)
Trialkyltetrahydrophthalic anhydride (trade name “YH-306”, manufactured by Japan Epoxy Resin Co., Ltd.)

(Curing accelerator)
2,4-Diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl-s-triazine isocyanuric acid addition salt (trade name “2MA-OK”, manufactured by Shikoku Kasei Kogyo Co., Ltd.)

(Inorganic filler)
Surface phenyl-treated inorganic filler (silica) (trade name “SE-1050-SPT”, manufactured by Admatechs)
Surface hydrophobized fumed silica (trade name “MT-10”, manufactured by Tokuyama Corporation)

(Other)
Silane coupling agent (trade name “KBM-573”, manufactured by Shin-Etsu Chemical Co., Ltd.)
Solvent Methyl ethyl ketone (MEK, Wako Pure Chemical Industries, Ltd.)

Example 1
(1) White light was used as the alignment device light source. Arranged to irradiate the sealing resin surface obliquely with the optical fiber focused toward the inside from the outside of the outer periphery of the lens connected to the alignment camera of the flip chip bonder (Toray Engineering). did. The incident angle was adjusted to be about 45-60 °.

(2) Manufacture of semiconductor chip assembly Bumps (projection electrodes) having a diameter of 20 cm, a thickness of 725 μm, a solder having a height of 35 μm and a width of 35 μm on a square copper post with a solder of 20 μm in height are 50 μm. A wafer having a size of one chip of 7.6 mm square and having a large number of peripherals formed at a pitch was prepared. According to the composition of Table 1, each material shown above was stirred and mixed using a homodisper to prepare a sealing resin solution. A sealing resin solution was coated on the bump surface of the bumped wafer by a spin coater so as to cover the bumps and alignment marks, and dried at 80 ° C. for 20 minutes to obtain a wafer with a sealing resin layer.
The back surface of the wafer (the surface on which the sealing resin layer was not formed) was bonded to a dicing tape with a dicing ring. Thereafter, the wafer was diced together with the sealing resin layer in accordance with the dicing street, and the chip with the sealing resin layer was picked up. In a state where the chip with the sealing resin layer is held by the head of the flip chip bonder, alignment (position adjustment) of the chip with the sealing resin layer and the substrate is performed using the alignment device described above, and then the flip chip bonder The bump of the chip with the sealing resin layer and the electrode part of the substrate were bonded together and the sealing resin layer was cured to obtain a semiconductor chip bonded body.

(Example 2)
A semiconductor chip bonded body was obtained in the same manner as in Example 1 except that the composition of the sealing resin solution was changed as shown in Table 1.

(Example 3)
As the light source of the alignment apparatus, the white light of the halogen lamp is condensed and used, and the light in the near-infrared region having a wavelength of 700 to 900 nm is extracted by providing a filter on the optical axis, and is the same as in Example 2. Thus, a semiconductor chip assembly was obtained.

Example 4
As the light source of the alignment apparatus, the white light of the halogen lamp is condensed and used, and a red light having a wavelength of 620 to 750 nm is extracted by providing a filter on the optical axis, in the same manner as in Example 2, A semiconductor chip assembly was obtained.

(Example 5)
As the light source of the alignment apparatus, the white light of the halogen lamp is condensed and used, and the yellow light having a wavelength of 570 to 620 nm is extracted by providing a filter on the optical axis, in the same manner as in Example 2, A semiconductor chip assembly was obtained.

(Comparative Example 1)
A semiconductor chip bonded body was obtained in the same manner as in Example 1 except that alignment was performed using coaxial light (light incident perpendicularly to the sealing resin layer).

(Comparative Example 2)
A semiconductor chip joined body was obtained in the same manner as in Example 2 except that alignment was performed using coaxial light (light incident perpendicularly to the sealing resin layer).

(Comparative Example 3)
A semiconductor chip joined body was obtained in the same manner as in Example 3 except that alignment was performed using coaxial light (light incident perpendicularly to the sealing resin layer).

(Comparative Example 4)
As the light source of the alignment apparatus, the white light of the halogen lamp is condensed and used, and the purple light having a wavelength of 380 to 450 nm is extracted by providing a filter on the optical axis, in the same manner as in Example 2, A semiconductor chip assembly was obtained.

(Comparative Example 5)
As the light source of the alignment apparatus, the white light of the halogen lamp is condensed and used, and a blue light having a wavelength of 450 to 495 nm is extracted by providing a filter on the optical axis, in the same manner as in Example 2, A semiconductor chip assembly was obtained.

(Comparative Example 6)
As the light source of the alignment apparatus, the white light of the halogen lamp is condensed and used, and a green light with a wavelength of 495 to 570 nm is extracted by providing a filter on the optical axis, in the same manner as in Example 2, A semiconductor chip assembly was obtained.

(Contrast image evaluation)
In the alignment adjustment in the examples and comparative examples, the contrast images of the protruding electrodes and / or alignment marks recognized by the camera were evaluated according to the following criteria. The case where the contrast image was observed quite clearly was marked with ◎, the case where the contrast image was observed to a certain degree, ◯, the case where it was unclear but observable was marked with Δ, and the case where it was hardly observed was marked with ×. The results are shown in Table 1.

ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the semiconductor chip assembly which makes it easy to recognize the contrast image of the protruding electrode and / or alignment mark by a camera, and can perform highly accurate joining can be provided.

Claims (1)

A sealing resin layer having a protruding electrode or a protruding electrode and an alignment mark and containing a resin component as a matrix and a solid component insoluble in the resin component covers the protruding electrode and / or the alignment mark Preparing a semiconductor chip provided to do;
Irradiating the sealing resin layer with light having a wavelength of 600 nm or more so that an optical axis is inclined, and causing the camera to recognize a contrast image of the protruding electrode and / or the alignment mark;
A step of adjusting the position of the semiconductor chip with respect to a substrate or other semiconductor chip as a joined body;
A method of manufacturing a semiconductor chip assembly, comprising: bonding the protruding electrode of the semiconductor chip to an electrode portion of the substrate or another semiconductor chip and curing the sealing resin layer. .