JP2016201418A - Adhesive film for joining semiconductor, and manufacturing method of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an adhesive film for joining a semiconductor capable of improving productivity by remarkably shortening a cycle time and capable of performing joining with high reliability, and a manufacturing method of a semiconductor device.SOLUTION: An adhesive film for joining a semiconductor is used for a manufacturing method of a semiconductor device including: a step 1 for supplying the adhesive film for joining the semiconductor to a surface having the solder electrode of a semiconductor chip with the solder electrode; a step 2 for temporarily joining the semiconductor chip with the solder electrode onto a semiconductor chip or a circuit board including a counter electrode or an electrode pad via the adhesive film for joining the semiconductor at a temperature lower than a solder melting temperature; and a step 3 for performing solder joint by bringing a bonding head that is heated to a temperature equal to or higher than the solder melting temperature, into contact with a joining portion. The adhesive film for joining the semiconductor contains at least a thermosetting resin, a thermosetting agent and a high molecular weight compound, lowest melting viscosity (VA) in a temperature range of 60°C to 300°C is 100 to 700 Pa s, and a ratio (VB/VA) of melting viscosity (VB) at a temperature that is higher than a lowest melting viscosity reach temperature by 10°C to the lowest melting viscosity (VA) is 1.2 or greater and smaller than 2.5.SELECTED DRAWING: None

Description

The present invention relates to an adhesive film for semiconductor bonding, which can significantly reduce tact time and improve productivity, and can be bonded with high reliability, and a method for manufacturing a semiconductor device.

As semiconductor devices are miniaturized and densified, flip chip mounting using a semiconductor chip having a large number of protruding electrodes formed on the surface has attracted attention and is rapidly spreading as a method for mounting a semiconductor chip on a substrate. .
In flip chip mounting, as a method for ensuring the connection reliability of the joint portion, after bonding the protruding electrode of the semiconductor chip and the electrode portion of the substrate, a liquid sealing adhesive (in the gap between the semiconductor chip and the substrate) It is a common method to inject and cure the underfill. However, flip chip mounting using underfill has problems such as high manufacturing cost, long time for underfill filling, and limitations in reducing the distance between electrodes and the distance between the semiconductor chip and the substrate. Yes.

Therefore, in recent years, so-called pre-coating type flip chip mounting in which a film-like adhesive is supplied onto a semiconductor wafer or a semiconductor chip and then a semiconductor chip with an adhesive is mounted on a substrate has been proposed (for example, Patent Documents). 1). When mounting semiconductor chips with adhesives on a substrate, a large amount of adhesive-adhesive semiconductor chips can be produced in one batch by dicing and supplying the adhesives to the semiconductor wafers in a batch. .

Japanese Patent Laying-Open No. 2015-19012

In flip chip mounting using a film adhesive, a semiconductor chip with an adhesive is placed on a substrate and temporarily joined, and then a resin that is brought into contact with a bonding head adjusted to a temperature below the solder melting point is allowed to flow. (Preheating process), a mounting process in which the bonding head is heated to a temperature equal to or higher than the solder melting point (main heating process) and soldered is generally used. However, in the mounting method having such a preheating process-main heating process, it is necessary to cool / heat the bonding head every time it is mounted, and there is a problem that it takes time for mounting.
On the other hand, the present inventors studied to directly contact the bonding head heated to a temperature equal to or higher than the solder melting temperature, omitting the preheating step. If the preheating step can be omitted, it is not necessary to cool / heat the bonding head every time it is mounted, and productivity can be expected to be greatly improved by shortening tact time. However, the conventional film-like adhesive has a problem that bonding failure may occur when the preheating process is omitted.
An object of the present invention is to provide an adhesive film for semiconductor bonding, which can significantly reduce tact time and improve productivity, and can be bonded with high reliability, and a method for manufacturing a semiconductor device, in view of the above-described present situation. And

The present invention includes a step 1 of supplying a semiconductor bonding adhesive film to a surface having a solder electrode of a semiconductor chip with a solder electrode, and the semiconductor chip with solder electrode is connected to the counter electrode or the semiconductor electrode via the semiconductor bonding adhesive film. A semiconductor device comprising a step 2 of temporary bonding on a semiconductor chip or circuit board having an electrode pad at a temperature lower than the solder melting temperature and a step 3 of solder bonding by bringing a bonding head heated to a temperature higher than the solder melting temperature into contact. The adhesive film for semiconductor bonding used in the manufacturing method of the above, comprising at least a thermosetting resin, a thermosetting agent and a high molecular weight compound, and having a minimum melt viscosity (VA) in a temperature range of 60 ° C. to 300 ° C. of 100. Melt viscosity (VB) and minimum melt viscosity at ˜700 Pa · s and 10 ° C. higher than the minimum melt viscosity attainment temperature VA) ratio of (VB / VA) is 1.2 or more, an adhesive film for a semiconductor junction is less than 2.5.
The present invention is described in detail below.

The inventors of the present invention have studied the problem when the bonding head heated to a temperature equal to or higher than the solder melting temperature is directly brought into contact with the preheating step omitted. As a result, in the conventional adhesive film for semiconductor bonding, when a bonding head heated to a temperature equal to or higher than the solder melting temperature is brought into contact, the molten solder is washed away by the flow resistance of the resin. I found out that it was. As a method for reducing the flow resistance of such a resin, it was considered to use an adhesive film for semiconductor bonding having a low melt viscosity. However, if the melt viscosity is lowered, the flow resistance is reduced and the solder flow can be suppressed, but a void is generated due to a rapid temperature rise. If a fast-curing adhesive film for joining semiconductors is used to prevent the generation of voids, the resin cures before the solder melts, resulting in poor solder joints due to resin biting.

As a result of further studies, the inventors have found that the minimum melt viscosity (VA) in the temperature range of 60 ° C. to 300 ° C. is 100 to 700 Pa · s, and the melt viscosity (VB) is 10 ° C. higher than the minimum melt viscosity attainment temperature. ) And the minimum melt viscosity (VA) ratio (VB / VA) is 1.2 or more and less than 2.5, the preheating step is omitted and the temperature equal to or higher than the solder melting temperature. Even when a heated bonding head is in direct contact, bonding failure due to solder flow, generation of voids, and solder bonding failure due to resin biting can be prevented, greatly reducing tact and improving productivity. The present invention has been completed. This is because the flow resistance is reduced by lowering the minimum melt viscosity of the semiconductor bonding adhesive film and the solder flow can be suppressed, and by setting the curing rate of the semiconductor bonding adhesive film within an appropriate range, This is considered to be because generation of solder and defective solder joints due to resin biting can be suppressed.

In the adhesive film for semiconductor bonding of the present invention, the lower limit of the minimum melt viscosity (VA) in the temperature range of 60 ° C. to 300 ° C. is 100 Pa · s, and the upper limit is 700 Pa · s. Generation of voids can be prevented by setting the minimum melt viscosity (VA) to 100 Pa · s or more. In addition, by setting the minimum melt viscosity (VA) to 700 Pa · s or less, when the bonding head heated to a temperature equal to or higher than the solder melting temperature is brought into contact in Step 3 of the semiconductor device manufacturing method described later, the resin It is possible to prevent the solder from being washed away by the flow resistance, and to prevent the occurrence of poor bonding. The minimum with said minimum melt viscosity (VA) is 150 Pa * s, a preferable upper limit is 680 Pa * s, a more preferable minimum is 200 Pa * s, and a more preferable upper limit is 650 Pa * s.
Here, the temperature range of 60 ° C. to 300 ° C. corresponds to the temperature range applied to the semiconductor bonding adhesive film when the bonding head heated to a temperature equal to or higher than the solder melting temperature in Step 3 is brought into contact. is there.
In this specification, the minimum melt viscosity (VA) in the temperature range of 60 ° C. to 300 ° C. is a temperature increase rate of 10 ° C. using a rotary rheometer device (for example, “VAR-100” manufactured by Rheologicala). / Min, frequency 1 Hz, strain 0.5% means the lowest value of complex viscosity when measured from a measurement temperature range of 60 ° C to 300 ° C.

In the adhesive film for semiconductor bonding of the present invention, the ratio (VB / VA) of the melt viscosity (VB) and the minimum melt viscosity (VA) at a temperature 10 ° C. higher than the minimum melt viscosity reaching temperature is 1.2 or more, 2.5 Is less than. The thermosetting adhesive bonding film for semiconductor bonding causes the resin to fluidize and decrease in viscosity as the temperature rises, but when the temperature rises even after reaching the minimum melt viscosity, thermosetting begins and the viscosity increases. To go. VB / VA indicates how much the viscosity has been increased by thermosetting when the temperature reaches 10 ° C. higher than the lowest melt viscosity attainment temperature, and is a numerical value serving as an index of the curing rate. When VB / VA is within the above range, the curing rate of the adhesive film for semiconductor bonding is within an appropriate range to suppress the generation of voids and the occurrence of poor solder bonding due to resin biting. it can. If VB / VA is less than 1.2, voids or solder flow may occur, and if it is 2.5 or more, solder joint failure may occur due to resin biting. is there. A preferable upper limit of VB / VA is 2.0.
The melt viscosity (VB) and the minimum melt viscosity (VA) at a temperature 10 ° C. higher than the minimum melt viscosity attainment temperature are increased by using a rotary rheometer device (for example, “VAR-100” manufactured by Rheology Corporation). It can be measured under conditions of a speed of 10 ° C./min, a frequency of 1 Hz, and a strain of 0.5%.

The adhesive film for semiconductor bonding of the present invention contains at least a thermosetting resin, a thermosetting agent, and a high molecular weight compound.
The said thermosetting resin is not specifically limited, For example, the compound hardened | cured by reaction, such as addition polymerization, polycondensation, polyaddition, addition condensation, ring-opening polymerization, is mentioned.
Specific examples of the thermosetting resin include urea resin, melamine resin, phenol resin, resorcinol resin, epoxy resin, acrylic resin, polyester resin, polyamide resin, polybenzimidazole resin, diallyl phthalate resin, xylene resin, alkyl -A benzene resin, an epoxy acrylate resin, a silicon resin, a urethane resin, etc. are mentioned. Especially, an epoxy resin and an acrylic resin are preferable from a viewpoint of ensuring the intensity | strength and joining reliability of the hardened | cured material of the adhesive film for semiconductor joining.

The epoxy resin is not particularly limited, and examples thereof include bisphenol type epoxy resins such as bisphenol A type, bisphenol F type, bisphenol AD type and bisphenol S type, novolac type epoxy resins such as phenol novolak type and cresol novolak type, and resorcinol type epoxy. Resin, aromatic epoxy resin such as trisphenolmethane triglycidyl ether, naphthalene type epoxy resin, biphenyl type epoxy resin, fluorene type epoxy resin, dicyclopentadiene type epoxy resin, glycidyl ester type epoxy resin, glycidyl amine type epoxy resin, poly Examples include ether-modified epoxy resins, NBR-modified epoxy resins, CTBN-modified epoxy resins, and hydrogenated products thereof. These epoxy resins may be used independently and may use 2 or more types together.

The epoxy resin may be an epoxy resin that is liquid at room temperature, or may be an epoxy resin that is solid at room temperature, or may be used in appropriate combination.
Among the epoxy resins that are liquid at normal temperature, commercially available products such as EPICLON 840, 840-S, 850, 850-S, EXA-850CRP (manufactured by DIC), EP-4100HF (manufactured by ADEKA), etc. Bisphenol A epoxy resin, EPICLON 830, 830-S, EXA-830CRP (manufactured by DIC) EP-4900HF (manufactured by Adeka), etc., bisphenol F epoxy resin, EP-4000S, EP-4000L, EP-4003S Bisphenol A-PO type epoxy resins such as EP-4010S and EP-4010L (manufactured by Adeka), naphthalene type epoxy resins such as EPICLON HP-4032 and HP-4032D (manufactured by DIC), EPICLON EXA- 7015 (manufactured by DIC), EX-2 Hydrogenated bisphenol A type epoxy resin such as 52 (manufactured by Nagase ChemteX), resorcinol type epoxy resin such as EX-201 (manufactured by Nagase ChemteX), EP-4088S, EP-4088L (manufactured by Adeka) Benzophenone type epoxy resins such as dicyclopentadiene type epoxy resin, EP-3300E, EP-3300S (manufactured by Adeka), EP-3900S, EP-3950L, EP-3980S (manufactured by Adeka), JER- Glycidylamine type epoxy resins such as 630 and 604 (manufactured by Mitsubishi Chemical Corporation), JER-825, 827, 828, 806, 807, 152, 630, 871, YX8000, YX8034, YL980, YL983 (and above, manufactured by Mitsubishi Chemical Corporation) And liquid epoxy resins.

Among the epoxy resins that are solid at room temperature, commercially available products include, for example, bisphenol A type epoxy resins such as EPICLON 860, 10550, and 1055 (manufactured by DIC), and bisphenol S such as EPICLON EXA-1514 (manufactured by DIC). Type epoxy resin, bisphenol F type epoxy resin such as JER-4004P, 4005P, 4007P, 4010P (Mitsubishi Chemical), EPICLON HP-4700, HP-4710, HP-4770 (Made by DIC) Naphthalene type epoxy resin, dicyclopentadiene type epoxy resin such as EPICLON HP-7200 series (manufactured by DIC), cresol novolac type epoxy resin such as EPICLON HP-5000, EXA-9900 (manufactured by DIC), JER −1001, 1002, 1003, 1055, 1004, 1005, 1006, 1007, 1009, 1010, 154, 157S70, 1031S, 1032H60, YL6810, YL7700, YX8800, YX4000, YL6121H, YX7399 (manufactured by Mitsubishi Chemical Corporation), etc. Examples thereof include solid epoxy resins.

The said thermosetting agent is not specifically limited, A conventionally well-known thermosetting agent can be suitably selected according to the said thermosetting resin. When an epoxy resin is used as the thermosetting resin, the thermosetting agent may be, for example, an acid anhydride curing agent, a phenol curing agent, an amine curing agent, a latent curing agent such as dicyandiamide, or a cationic catalytic curing. Agents, ketimine curing agents, thiol-based curing agents, and the like. These thermosetting agents may be used independently and may use 2 or more types together. Of these, an acid anhydride curing agent is preferable because of excellent curing speed, physical properties of the cured product, and the like.

Among the acid anhydride curing agents, commercially available products include, for example, YH-306, YH-307 (above, manufactured by Mitsubishi Chemical Corporation, liquid at normal temperature (25 ° C.)), YH-309 (manufactured by Mitsubishi Chemical Corporation, normal temperature). (Solid at 25 ° C.)).

The content of the thermosetting agent is not particularly limited. When an epoxy resin is used as the thermosetting resin and a thermosetting agent that reacts with an epoxy group in an equal amount is used, the content of the thermosetting agent is for semiconductor bonding. The preferable lower limit with respect to the total amount of epoxy groups contained in the adhesive film is 60 equivalents, and the preferable upper limit is 110 equivalents. When the content is less than 60 equivalents, the adhesive film for semiconductor bonding may not be sufficiently cured. Even if the content exceeds 110 equivalents, it does not contribute particularly to the curability of the adhesive film for semiconductor bonding, and may cause voids due to volatilization of an excessive thermosetting agent. The more preferable lower limit of the content is 70 equivalents, and the more preferable upper limit is 100 equivalents.

The high molecular weight compound is not particularly limited. For example, urea resin, melamine resin, phenol resin, resorcinol resin, epoxy resin, acrylic resin, polyester resin, polyamide resin, polybenzimidazole resin, diallyl phthalate resin, xylene resin, alkyl -Well-known high molecular weight compounds, such as a benzene resin, an epoxy acrylate resin, a silicon resin, and a urethane resin, are mentioned. Among these, a high molecular weight compound having an epoxy group is preferable.

By adding the high molecular weight compound having an epoxy group, the cured product of the adhesive film for semiconductor bonding exhibits excellent flexibility. That is, the cured product of the adhesive film for semiconductor bonding is excellent in mechanical strength, heat resistance and moisture resistance derived from the epoxy resin as the thermosetting resin, and excellent in the high molecular weight compound having the epoxy group. Since it combines flexibility, it will be excellent in cold-heat cycle resistance, solder reflow resistance, dimensional stability, etc., and will exhibit high joint reliability and high conduction reliability.

The high molecular weight compound having an epoxy group is not particularly limited as long as it is a high molecular weight compound having an epoxy group at the terminal and / or side chain (pendant position). For example, an epoxy group-containing acrylic rubber, an epoxy group-containing butadiene rubber, Examples thereof include bisphenol type high molecular weight epoxy resin, epoxy group-containing phenoxy resin, epoxy group-containing acrylic resin, epoxy group-containing urethane resin, and epoxy group-containing polyester resin. Especially, since the high molecular weight compound containing many epoxy groups can be obtained and the mechanical strength and heat resistance of hardened | cured material will become more excellent, an epoxy group containing acrylic resin is preferable. These high molecular weight compounds having an epoxy group may be used alone or in combination of two or more.

When the high molecular weight compound having an epoxy group, particularly an epoxy group-containing acrylic resin is used as the high molecular weight compound, the preferred lower limit of the weight average molecular weight of the high molecular weight compound having the epoxy group is 10,000, and the preferred upper limit is 1,000,000. It is. When the weight average molecular weight is less than 10,000, the film forming property of the adhesive film for semiconductor bonding may be insufficient, or the flexibility of the cured product of the adhesive film for semiconductor bonding may not be sufficiently improved. . When the weight average molecular weight exceeds 1,000,000, the high molecular weight compound may have a reduced solubility in a solvent and a handleability.

When the high molecular weight compound having an epoxy group, particularly an epoxy group-containing acrylic resin is used as the high molecular weight compound, the preferable lower limit of the epoxy equivalent of the high molecular weight compound having the epoxy group is 200, and the preferable upper limit is 1000. If the epoxy equivalent is less than 200, the flexibility of the cured product of the adhesive film for semiconductor bonding may not be sufficiently improved. If the epoxy equivalent exceeds 1000, the mechanical strength or heat resistance of the cured product of the adhesive film for semiconductor bonding may be insufficient.

Content of the said high molecular weight compound in the adhesive film for semiconductor joining of this invention is not specifically limited, The preferable minimum in the adhesive film for semiconductor joining of this invention is 3 weight%, and a preferable upper limit is 30 weight%.

The adhesive film for semiconductor bonding of the present invention may further contain a curing accelerator for the purpose of adjusting the curing speed, the physical properties of the cured product, and the like.
The said hardening accelerator is not specifically limited, For example, an imidazole series hardening accelerator, a tertiary amine type hardening accelerator, etc. are mentioned. Of these, an imidazole curing accelerator is preferred because it is easy to control the reaction system for adjusting the curing speed and the physical properties of the cured product.

The imidazole curing accelerator is not particularly limited. For example, Fujicure 7000 (manufactured by T & K TOKA, liquid at room temperature (25 ° C.)), 1-cyanoethyl-2-phenylimidazole in which 1-position of imidazole is protected with a cyanoethyl group, Imidazole-based curing accelerator with basicity protected with isocyanuric acid (trade name “2MA-OK”, manufactured by Shikoku Kasei Kogyo Co., Ltd., solid at room temperature (25 ° C.)), 2MZ, 2MZ-P, 2PZ, 2PZ-PW, 2P4MZ , C11Z-CNS, 2PZ-CNS, 2PZCNS-PW, 2MZ-A, 2MZA-PW, C11Z-A, 2E4MZ-A, 2MAOK-PW, 2PZ-OK, 2MZ-OK, 2PHZ, 2PHZ-PW, 2P4MHZ, 2P4MHZ -PW, 2E4MZ · BIS, VT, VT-OK, MAVT, MAVT-O (Or more, Shikoku Chemicals Co., Ltd.), and the like. These imidazole type hardening accelerators may be used independently and may use 2 or more types together.

Content of the said hardening accelerator is not specifically limited, The preferable minimum with respect to 100 weight part of thermosetting agents is 2 weight part, and a preferable upper limit is 50 weight part. When the content is less than 2 parts by weight, heating for a long time at a high temperature may be required for thermosetting the adhesive film for semiconductor bonding. When the content exceeds 50 parts by weight, the storage stability of the adhesive film for semiconductor bonding may be insufficient, or voids may be caused by excessive volatilization of the curing accelerator. A more preferred lower limit of the content is 3 parts by weight, and a more preferred upper limit is 30 parts by weight.

The adhesive film for semiconductor bonding of the present invention may further contain an inorganic filler.
The inorganic filler is not particularly limited, and examples thereof include silica, alumina, aluminum nitride, boron nitride, silicon nitride, silicon carbide, magnesium oxide, and zinc oxide. These inorganic fillers may be used alone or in combination of two or more. Among them, spherical silica is preferable because of excellent fluidity, and spherical silica surface-treated with a methylsilane coupling agent, a phenylsilane coupling agent, a vinylsilane coupling agent, a methacrylic silane coupling agent, or the like is more preferable.

Although the average particle diameter of the said inorganic filler is not specifically limited, About 0.01-1 micrometer is preferable from viewpoints, such as transparency of the adhesive film for semiconductor joining, fluidity | liquidity, joining reliability.
Content of the said inorganic filler is not specifically limited, The preferable minimum with respect to 100 weight part of the said thermosetting resins is 10 weight part, and a preferable upper limit is 70 weight part.

The adhesive film for semiconductor bonding of the present invention is further provided with an adhesive imparting agent such as a diluent, a thixotropy imparting agent, a solvent, an inorganic ion exchanger, a bleed inhibitor, and an imidazole silane coupling agent, as necessary. Other additives such as an agent and a stress relaxation agent such as rubber particles may be contained.

For example, by adjusting the blending ratio of the high molecular weight compound and the thermosetting resin, the content of the liquid thermosetting resin, and the content of the inorganic filler, the adhesive film for semiconductor bonding of the present invention has a temperature of 60 ° C. to 300 ° C. The ratio (VB / VA) of the melt viscosity (VB) and the minimum melt viscosity (VA) at a temperature 10 ° C higher than the minimum melt viscosity attainment temperature, with the minimum melt viscosity (VA) in the temperature range of ° C within the expected range Can be within the expected range.
More specifically, for example, a method of adjusting the weight ratio of the high molecular weight compound / liquid thermosetting resin to 1 to 3 or adjusting the content of the inorganic filler to a range of 20 to 60 parts by weight. It is done.
In addition, when the thermosetting resin is an epoxy resin, the nitrogen-containing compound exhibits a catalytic function in the crosslinking reaction of the epoxy resin, so that the content of the nitrogen-containing compound in the adhesive film for semiconductor bonding can be adjusted. Conceivable. Specific examples of the nitrogen-containing compound include glycidylamine type epoxy resins as thermosetting resins, amine-based curing agents or curing accelerators as curable agents or curing accelerators, dicyandiamide, imidazole-based curing accelerators, and the like. . More specifically, for example, there is a method of adjusting the content of the nitrogen-containing compound in the adhesive film for semiconductor bonding to 2 to 12% by weight.

Although the thickness of the adhesive film for semiconductor bonding of the present invention is not particularly limited, the preferable lower limit is 5 μm, the preferable upper limit is 60 μm, the more preferable lower limit is 10 μm, and the more preferable upper limit is 50 μm.

The method for producing the adhesive film for semiconductor bonding of the present invention is not particularly limited. For example, a predetermined amount of other additives are blended in a thermosetting resin, a thermosetting agent, and a high molecular weight compound as necessary. Examples thereof include a method of coating the obtained resin composition on a release film and drying it to produce a film. The mixing method is not particularly limited, and examples thereof include a method using a homodisper, a universal mixer, a Banbury mixer, a kneader and the like.

The adhesive film for semiconductor bonding of the present invention includes a step 1 of supplying an adhesive film for semiconductor bonding to a surface of the semiconductor chip with solder electrodes having the solder electrode, and the semiconductor chip with solder electrodes is bonded to the adhesive film for semiconductor bonding. Then, solder bonding is performed by bringing a bonding head heated to a temperature equal to or higher than the solder melting temperature into contact with a semiconductor chip having a counter electrode or an electrode pad or a step 2 for temporary bonding at a temperature lower than the solder melting temperature. This is used in a method for manufacturing a semiconductor device having step 3.

In the method for manufacturing a semiconductor device, first, a step 1 of supplying an adhesive film for semiconductor bonding to a surface of the semiconductor chip with a solder electrode having the solder electrode is performed.
Examples of the semiconductor chip with a solder electrode include a semiconductor chip made of a semiconductor such as silicon or gallium arsenide, and a protruding electrode having a tip portion made of solder formed on the surface. It should be noted that the protruding electrode having the tip portion made of solder may be formed of a part of the protruding electrode, or the entire protruding electrode may be made of solder, as long as the tip portion is made of solder.

The method of supplying the adhesive film for semiconductor bonding in the step 1 is not particularly limited. For example,
The method etc. which affix the adhesive film for semiconductor joining on the said semiconductor chip with a solder electrode are mentioned. Alternatively, a method of bonding a semiconductor bonding adhesive film to a semiconductor wafer with solder electrodes in advance by normal pressure lamination, vacuum lamination, or the like, and then separating the semiconductor chips into pieces by blade dicing, laser dicing, or the like can be used.

Next, in the semiconductor device manufacturing method, a semiconductor chip with solder electrodes is temporarily bonded to a semiconductor chip having a counter electrode or an electrode pad or a circuit board via a semiconductor bonding adhesive film at a temperature lower than the solder melting temperature. Step 2 is performed. By temporarily fixing a plurality of semiconductor chips with solder electrodes in step 2 and then soldering them together in step 3, a significant process can be shortened. In particular, this method is very effective in terms of high productivity when stacking semiconductor chips in multiple stages or when connecting a plurality of semiconductor chips at once.
The step 2 can be performed using a mounting apparatus such as a flip chip bonder, for example.
The solder melting point is usually about 215 to 235 ° C., and temporary fixing in step 2 is performed at a temperature lower than the solder melting point. The temperature below the solder melting point is preferably about 100 to 200 ° C.

In the semiconductor device manufacturing method, next, the step 3 of solder bonding is performed by bringing a bonding head heated to a temperature equal to or higher than the solder melting temperature into contact.
By directly contacting the bonding head heated to a temperature equal to or higher than the solder melting temperature without performing the preheating process that is generally performed, it is not necessary to cool / heat the bonding head every time it is mounted. Tact time is shortened and productivity is improved. Here, by using the adhesive film for semiconductor bonding of the present invention, even when a bonding head heated to a temperature higher than the solder melting temperature is directly contacted, bonding failure due to solder flow, generation of voids, and resin biting It is possible to prevent a solder joint failure due to entrainment.

Since the solder melting point is usually about 215 to 235 ° C., it is preferable that the bonding head is heated to 220 to 300 ° C. in Step 3. When the temperature is lower than 220 ° C., the protruding electrode may not be sufficiently melted and electrode bonding may not be formed. When the temperature exceeds 300 ° C., a volatile component may be generated from the adhesive to increase voids.

As the holding time after contacting the bonding head heated to a temperature equal to or higher than the solder melting temperature in the above step 3, a preferable lower limit is 0.1 second and a preferable upper limit is 10 seconds. If the holding time is less than 0.1 seconds, the protruding electrode may not be sufficiently melted and electrode bonding may not be formed. If the holding time exceeds 10 seconds, it may become a long tact and the productivity may decrease.
In the step 3, it is preferable to apply pressure to the semiconductor chip. Although a pressure will not be specifically limited if it is a pressure in which electrode joining is formed, 0.1-4 Mpa is preferable.

In the manufacturing method of the semiconductor device, after the step 3, the step 4 of removing voids by heating in a pressurized atmosphere may be performed. By performing step 4, even if air is caught in the adhesive film for semiconductor bonding, the void can be removed.
The pressurized atmosphere means a pressure atmosphere higher than normal pressure (atmospheric pressure).

Examples of the method of heating in a pressurized atmosphere in the above step 4 include a method using a pressure oven (for example, PCO-083TA (manufactured by NTT Atvans Technology)).
The preferable lower limit of the pressure of the pressure oven is 0.2 MPa, and the preferable upper limit is 10 MPa. If the pressure is less than 0.2 MPa, the void may not be sufficiently removed. When the pressure exceeds 10 MPa, the adhesive film for semiconductor bonding is deformed, which may adversely affect the reliability of the semiconductor device. The more preferable lower limit of the pressure is 0.3 MPa, and the more preferable upper limit is 1 MPa.

The preferable lower limit of the heating temperature when heating in a pressurized atmosphere in Step 4 is 60 ° C., and the preferable upper limit is 150 ° C. However, when heating in a pressurized atmosphere, it may be held at a constant temperature and a constant pressure, or the temperature and / or pressure may be changed step by step while raising the temperature and / or raising the pressure.
Moreover, in order to remove a void more reliably, it is preferable that the heating time at the time of heating in a pressurized atmosphere is 10 minutes or more.

In the manufacturing method of the semiconductor device, after performing Step 3 (or Step 4 as necessary), Step 5 for completely curing the adhesive film for semiconductor bonding may be performed.
As a method for completely curing the adhesive film for semiconductor bonding, for example, a method for completely curing the adhesive film for semiconductor bonding by raising the temperature as it is in a pressurized atmosphere after performing Step 4 and heating under normal pressure. Examples include a method of completely curing. Although the heating temperature at the time of completely hardening the said adhesive film for semiconductor joining is not specifically limited, About 150-200 degreeC is preferable.

Step 1 of supplying a semiconductor bonding adhesive film to the surface having the solder electrode of the semiconductor chip with solder electrode, and the semiconductor chip with solder electrode having a counter electrode or an electrode pad through the semiconductor bonding adhesive film A method of manufacturing a semiconductor device, comprising: a step 2 of temporary bonding on a semiconductor chip or a circuit board at a temperature lower than a solder melting temperature; and a step 3 of solder bonding by bringing a bonding head heated to a temperature higher than the solder melting temperature into contact. And the said adhesive film for semiconductor joining contains a thermosetting resin, a thermosetting agent, and a high molecular weight compound at least, and the minimum melt viscosity (VA) in the temperature range of 60 to 300 degreeC is 100 to 700 Pa.s. And the ratio of the melt viscosity (VB) to the minimum melt viscosity (VA) at a temperature 10 ° C. higher than the minimum melt viscosity attainment temperature. VB / VA) is 1.2 or more, a method of manufacturing a semiconductor device are those less than 2.5 it is also one of the present invention.

ADVANTAGE OF THE INVENTION According to this invention, tact can be reduced significantly and productivity can be improved, and the adhesive film for semiconductor joining which can be joined with high reliability, and the manufacturing method of a semiconductor device can be provided.

Hereinafter, embodiments of the present invention will be described in more detail with reference to examples. However, the present invention is not limited to these examples.

(Examples 1-6, Comparative Examples 1-4)
(1) Preparation of adhesive film for semiconductor bonding Each material described in Table 1 was added to MEK as a solvent according to the composition described in Table 2, and an adhesive solution was manufactured by stirring and mixing using a homodisper. . The obtained adhesive solution was coated on a release PET film using an applicator so that the thickness after drying was 30 μm and dried to produce an adhesive film. Until use, the surface of the obtained adhesive layer was protected with a release PET film (protective film).

(2) Manufacture of Semiconductor Device A wafer (WALTS-TEG MB50-0101JY, solder melting point 235 ° C., manufactured by Waltz Co., Ltd.) in which bumps made of solder are formed in a peripheral shape at a pitch of 50 μm was prepared. The protective film on one side of the adhesive film was peeled off, and the adhesive film was bonded to the surface on which the bumps of the wafer were formed at a stage temperature of 80 ° C. and a vacuum of 100 Pa using a vacuum laminator (ATM-812M, manufactured by Takatori).

The release PET film on the other surface of the adhesive film was peeled off, and a protective tape for grinding (Elep Holder BT3100P, manufactured by Nitto Denko Corporation) was laminated on the exposed adhesive surface. Next, the back surface of the wafer was ground using a grinding apparatus (DFG8560, manufactured by Disco Corporation) until the thickness reached 100 μm. A dicing tape was applied to the ground surface of the wafer, and the protective tape for grinding was peeled off. Thereafter, the wafer was diced using a dicing apparatus (DFD651, manufactured by Disco Corporation) at a feed rate of 20 mm / sec, and a semiconductor chip with an adhesive layer (7.6 mm × 7. 6 mm).

A substrate having a Ni / Au electrode (WALTS-KIT MB50-0101JY, manufactured by Waltz) was prepared. Using a flip chip bonder (FC-3000, manufactured by Toray Engineering Co., Ltd.), applying a load for 5 seconds at a contact temperature of 100 ° C., a mounting temperature of 100 ° C., and a mounting load of 1.7 MPa under the condition of a bonding stage temperature of 100 ° C. The obtained semiconductor chip with an adhesive layer was temporarily pressure-bonded onto the substrate. Thereafter, in a semiconductor chip temporarily bonded onto the substrate, using a flip chip bonder (FC-3000, manufactured by Toray Engineering Co., Ltd.), under a bonding stage temperature of 100 ° C., a contact temperature of 280 ° C., a mounting temperature of 280 ° C., A final pressure bonding was performed by applying a load for 5 seconds at a mounting load of 1.7 MPa. Thereafter, the adhesive layer was completely cured by holding in an oven at 190 ° C. for 30 minutes to obtain a semiconductor device.

<Evaluation>
The following evaluation was performed about the semiconductor device obtained by the Example and the comparative example.
The results are shown in Table 2.

(1) Evaluation of initial conduction About the daisy chain formed between the semiconductor chip and the electric terminal of the substrate, the conduction was confirmed by a four-terminal method using an ohmmeter (3541, manufactured by HIOIKI). Of the peripheral electrodes on the four sides, those that could be confirmed to be conductive on all four sides were evaluated as “good”, and those that could not be confirmed on one or more of the four sides were evaluated as “x” as defective. .

(2) Evaluation of solder flow The solder joint portion of the semiconductor device was observed with an X transmission device (MF100C, manufactured by Hitachi Engineering & Service Co., Ltd.) to confirm the presence or absence of solder flow. The case where the solder was present only in the solder joint was evaluated as “Good” as a good product, and the case where the solder swept away during the joining was present in an island shape other than the solder joint was evaluated as “Poor” as a defective product.

(3) Evaluation of solder jointability The semiconductor device was subjected to cross-sectional polishing using a polishing machine, and the joining state of the solder joint portion was observed using a microscope. “Good” indicates that the resin (adhesive) is not caught between the upper and lower electrodes and the solder is not lost due to solder flow, and the bonding state is good. If there is no solder loss due to the solder flow and the bonding state is relatively good, “△” is given as a non-defective product and solder due to the resin (adhesive) biting between the upper and lower electrodes or solder flow A case where there was a loss and the upper and lower electrodes were not joined at all was evaluated as “x” as a defective product.

(4) Evaluation of voids The semiconductor device was horizontally polished (polished horizontally with respect to the semiconductor chip surface) using a polishing machine, and the voids were observed using a microscope. If there is no void in the inner surface of the peripheral bump, and no void was observed in the opening of the substrate resist near the peripheral bump, “Good” indicates that the void is in the inner surface of the peripheral bump. Although there is no void in the substrate resist opening in the vicinity of the peripheral bump, “△” is given as a good product, and there is a void in the inner surface of the peripheral bump, and the substrate resist in the vicinity of the peripheral bump. A sample in which many voids were observed in the opening was evaluated as “x” as a defective product.

ADVANTAGE OF THE INVENTION According to this invention, tact can be reduced significantly and productivity can be improved, and the adhesive film for semiconductor joining which can be joined with high reliability, and the manufacturing method of a semiconductor device can be provided.

Claims (2)

Step 1 of supplying a semiconductor bonding adhesive film to the surface having the solder electrode of the semiconductor chip with solder electrode, and the semiconductor chip with solder electrode having a counter electrode or an electrode pad through the adhesive film for semiconductor bonding A method for manufacturing a semiconductor device, comprising: a step 2 for temporary bonding on a semiconductor chip or a circuit board at a temperature lower than a solder melting temperature; and a step 3 for solder bonding by bringing a bonding head heated to a temperature higher than the solder melting temperature into contact. A semiconductor bonding adhesive film used,
Containing at least a thermosetting resin, a thermosetting agent and a high molecular weight compound,
Ratio of melt viscosity (VB) and minimum melt viscosity (VA) at a temperature that is 100 to 700 Pa · s at a minimum melt viscosity (VA) in a temperature range of 60 ° C. to 300 ° C. and 10 ° C. higher than the minimum melt viscosity attainment temperature (VB / VA) is 1.2 or more and less than 2.5, an adhesive film for semiconductor bonding. Step 1 of supplying a semiconductor bonding adhesive film to the surface having the solder electrode of the semiconductor chip with solder electrode, and the semiconductor chip with solder electrode having a counter electrode or an electrode pad through the adhesive film for semiconductor bonding A method of manufacturing a semiconductor device, comprising: a step 2 of temporary bonding on a semiconductor chip or a circuit board at a temperature lower than a solder melting temperature; and a step 3 of solder bonding by bringing a bonding head heated to a temperature higher than the solder melting temperature into contact. There,
The semiconductor bonding adhesive film contains at least a thermosetting resin, a thermosetting agent, and a high molecular weight compound, and has a minimum melt viscosity (VA) in a temperature range of 60 ° C. to 300 ° C. of 100 to 700 Pa · s, and A ratio of melt viscosity (VB) to minimum melt viscosity (VA) (VB / VA) at a temperature 10 ° C. higher than the minimum melt viscosity attainment temperature is 1.2 or more and less than 2.5 Manufacturing method.