JP2012216831A - Semiconductor chip packaging body manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor chip packaging body manufacturing method which can perform highly accurate electrode bonding and reduce failure of electrode bonding.SOLUTION: A semiconductor chip packaging body manufacturing method comprises a process of pressing a semiconductor chip and an electronic component via an encapsulation resin 5 with heating the semiconductor chip and the electronic component at different temperatures to contact and bond bump electrodes 2 of the semiconductor chip with an electrode part of the electronic component, and a process of curing the encapsulation resin 5. In the process of contacting and bonding the bump electrodes 2 of the semiconductor chip with the electrode part of the electronic component, when it is assumed that a melt point of a tip portion of the bump electrode 2 of the semiconductor chip is M1, a melt point of the electrode part of the electronic component is M2, a temperature for heating the semiconductor chip is T1 and a temperature for heating the electronic component is T2, the following formula is satisfied: T1<M1<T2<M2 or T2<M2<T1<M1.

Description

The present invention can perform high-precision electrode bonding, and can reduce defective bonding of electrodes even in a thin semiconductor chip having a large number of protruding electrodes or a semiconductor chip having a fragile low dielectric layer. The present invention relates to a method for manufacturing a semiconductor chip package.

In recent years, flip-chip mounting using a semiconductor chip having protruding electrodes (bumps) made of solder or the like has been widely used in order to cope with miniaturization and high integration of semiconductor devices that are becoming more and more advanced. Further, since the distance between the semiconductor chips and the distance between the protruding electrodes are narrowed, the sealing resin layer is not provided after the electrode bonding, but a sealing resin layer is provided in advance on the substrate or the semiconductor chip. A method is being considered.
In such a method, generally, the semiconductor chip is pressed against the substrate through the sealing resin layer while heating the semiconductor chip, and then the semiconductor chip is heated to a temperature slightly higher than the temperature at which the protruding electrode of the semiconductor chip melts. By heating, the protruding electrode is bonded to the electrode portion of the substrate.

For example, in Patent Document 1, in a flip chip mounting method, a resin composition for a sealing filler is interposed on at least one facing surface of a semiconductor chip and a printed circuit board, and bumps of the semiconductor chip, electrodes of the printed circuit board, Is described. In the example of Patent Document 1, as a specific mounting condition, it is described that a thermo-ultrasonic combined flip chip bonder is thermocompression bonded under the conditions of a head temperature of 200 ° C., a stage temperature of 80 ° C., and a pressure of 180 N / chip. Yes.

However, in recent years, as the density of semiconductor chips has increased, the number of protruding electrodes per semiconductor chip has increased or the size of the protruding electrodes has decreased. In particular, the problem of poor bonding due to variations in the height of the protruding electrodes has become prominent.

JP 2008-147510 A

The present invention can perform high-precision electrode bonding, and can reduce defective bonding of electrodes even in a thin semiconductor chip having a large number of protruding electrodes or a semiconductor chip having a fragile low dielectric layer. An object of the present invention is to provide a method for manufacturing a semiconductor chip package.

The present invention includes a step of contacting and joining the protruding electrode of the semiconductor chip and the electrode portion of the electronic component by pressing the semiconductor chip and the electronic component through the sealing resin while heating to different temperatures. And a step of curing the sealing resin, wherein the step of contacting and joining the protruding electrode of the semiconductor chip and the electrode portion of the electronic component includes: When the melting point of the tip of the protruding electrode is M1, the melting point of the electrode part of the electronic component is M2, the temperature for heating the semiconductor chip is T1, and the temperature for heating the electronic component is T2, T1 <M1 <T2 This is a method for manufacturing a semiconductor chip package satisfying <M2 or T2 <M2 <T1 <M1.
The present invention is described in detail below.

When the height of the protruding electrode varies, the inventor cannot reach the electrode portion even if the semiconductor chip is pressed against the substrate, resulting in poor bonding of the electrodes. I found. Even when there is variation in the height of the protruding electrodes, for example, it is considered that all the protruding electrodes can reach the electrode portion by increasing the load for pressing the semiconductor chip. However, when a high load is applied to a thin semiconductor chip, the semiconductor chip is cracked or chipped, or a fragile low dielectric layer formed on the semiconductor chip is destroyed.
In response to such a problem, the present inventor, in the process of contacting and joining the protruding electrode of the semiconductor chip and the electrode part of the electronic component, at the time when the protruding electrode contacts the electrode part, By adjusting the heating temperature so that the protruding electrode melts or the electrode part is melted by the heat of the protruding electrode, there is no need to apply a high load even if the height of the protruding electrode varies. It has been found that even a thin semiconductor chip having a protruding electrode and a semiconductor chip having a fragile low dielectric layer can reduce defective bonding of electrodes. Furthermore, the present inventor has found that according to such a method, individual electrode bonding can be performed with high accuracy, and the present invention has been completed.

In the manufacturing method of the semiconductor chip mounting body of the present invention, first, the semiconductor chip and the electronic component are pressed through the sealing resin while being heated to different temperatures, so that the protruding electrode of the semiconductor chip and the electronic component are A process of contacting and joining the electrode part is performed.

The semiconductor chip has a protruding electrode. Examples of the protruding electrode include a protruding electrode made of only a low melting point electrode material, a protruding electrode having a columnar electrode made of a metal material such as copper, and a tip portion made of a low melting point electrode material. . Examples of the low melting point electrode material include solder.
The electronic component has an electrode part. Examples of the electrode material constituting the electrode part include alloys such as copper and lead-free solder. The electronic component is not particularly limited and is widely selected. Examples thereof include a semiconductor chip, a wafer, and a substrate.

In the step of contacting and joining the protruding electrode of the semiconductor chip and the electrode portion of the electronic component, the semiconductor chip and the electronic component are pressed while being heated to different temperatures.
As a method for pressing the semiconductor chip and the electronic component while heating them at different temperatures, for example, the electronic component is mounted on a stage set at a predetermined temperature in a bonding apparatus having a conventionally known stage and bonding head. And a method of pressing the semiconductor chip against the electronic component using a bonding head set at a predetermined temperature, and heating the semiconductor chip and the electronic component using a pulse heater set at a predetermined temperature, respectively. However, there is a method of pressing the semiconductor chip against the electronic component. Especially, since the temperature can be raised in a short time, a method of heating the semiconductor chip and the electronic component using a pulse heater is preferable.
When pressing the semiconductor chip and the electronic component, the electronic component may be pressed against the semiconductor chip, or the semiconductor chip may be pressed against the electronic component.

A method of setting the stage and the bonding head of the bonding apparatus to a predetermined temperature is not particularly limited, and examples thereof include a method of adjusting the stage temperature and the bonding head temperature using a heater such as a pulse heater or a constant heater.

The preferable lower limit of the load per protruding electrode when pressing the semiconductor chip and the electronic component is 0.002N, and the preferable upper limit is 0.080N. When the load is less than 0.002 N, good electrode bonding may not be performed particularly when the height of the protruding electrode varies. When the load exceeds 0.080 N, particularly when the semiconductor chip or the electronic component is thin, the semiconductor chip or the electronic component may be cracked or chipped.
A more preferable upper limit of the load per protruding electrode at the time of pressing is 0.010N. When the load exceeds 0.010 N, the brittle low dielectric layer of the semiconductor chip may be destroyed.

In the step of contacting and joining the protruding electrode of the semiconductor chip and the electrode portion of the electronic component, the melting point of the tip portion of the protruding electrode of the semiconductor chip is M1, the melting point of the electrode portion of the electronic component is M2, When the temperature for heating the semiconductor chip is T1, and the temperature for heating the electronic component is T2, T1 <M1 <T2 <M2 or T2 <M2 <T1 <M1.
When the electrode part of the electronic component has a plurality of melting points, the melting point M2 of the electrode part of the electronic component means the lowest melting point among the melting points of the electrode part of the electronic component.
FIG. 3 schematically shows an example of the process of contacting and joining the protruding electrode of the semiconductor chip and the electrode part of the electronic component in the method for manufacturing a semiconductor chip package according to the present invention. In FIG. 3, the protruding electrode 2 of the semiconductor chip held by the bonding head 1 and the electrode portion 3 of the electronic component (substrate) on the stage 4 are in contact with and bonded to each other. In FIG. 3, the melting point M1 at the tip of the protruding electrode, the melting point M2 of the substrate electrode, the bonding head temperature T1, and the stage temperature T2 are shown in parentheses after the reference numerals.

First, the formula: T1 <M1 <T2 <M2 will be described.
When the temperature (T1) for heating the semiconductor chip is lower than the melting point (M1) of the tip of the protruding electrode of the semiconductor chip (T1 <M1), the protruding electrode of the semiconductor chip becomes the electrode of the electronic component. It is not melted before contacting the part. On the other hand, when the temperature (T2) for heating the electronic component is higher than the melting point (M1) of the tip of the protruding electrode of the semiconductor chip (M1 <T2), the protruding electrode of the semiconductor chip is When it comes into contact with the electrode part, it melts due to the heat of the electrode part at the time of contact. Therefore, the protruding electrode of the semiconductor chip reaches the electrode part of the electronic component in order from the high protruding electrode and melts and is joined to the electrode part.
Therefore, by satisfying the formula: T1 <M1 <T2 <M2, it is not necessary to apply a high load even if the height of the protruding electrode varies, and a thin semiconductor chip having a large number of protruding electrodes or a fragile low Even in a semiconductor chip having a dielectric layer, it is possible to reduce electrode bonding defects. Also, individual electrode bonding can be performed with high accuracy.
The temperature (T2) for heating the electronic component is lower than the melting point (M2) of the electrode portion of the electronic component (T2 <M2), so that the electrode portion of the electronic component does not melt even when heated.

Next, the formula: T2 <M2 <T1 <M1 will be described.
Since the temperature (T2) for heating the electronic component is lower than the melting point (M2) of the electrode portion of the electronic component (T2 <M2), the electrode portion of the electronic component is in contact with the protruding electrode of the semiconductor chip. It has not melted before. On the other hand, when the temperature (T1) for heating the semiconductor chip is higher than the melting point (M2) of the electrode part of the electronic component (M2 <T1), the electrode part of the electronic component is connected to the protruding electrode of the semiconductor chip. When contacted, the projection electrode melts at the time of contact. Therefore, the electrode part of the electronic component is melted in order from the electrode part in contact with the high projecting electrode and joined to the projecting electrode.
Therefore, by satisfying the formula: T2 <M2 <T1 <M1, there is no need to apply a high load even if the height of the protruding electrode varies, and a thin semiconductor chip having a large number of protruding electrodes or a brittle low Even in a semiconductor chip having a dielectric layer, it is possible to reduce electrode bonding defects. Also, individual electrode bonding can be performed with high accuracy.
The temperature (T1) for heating the semiconductor chip is lower than the melting point (M1) of the tip of the protruding electrode of the semiconductor chip (T1 <M1), so that the protruding electrode of the semiconductor chip is heated. Does not melt.

The melting point (M1) of the tip of the protruding electrode of the semiconductor chip is, for example, about 220 ° C. when the electrode material constituting the tip is solder. The melting point (M2) of the electrode part of the electronic component is, for example, about 1083 ° C. when the electrode material constituting the electrode part is copper, and the electrode material constituting the electrode part is lead-free solder. In some cases, it is about 230 ° C.
The temperature (T1) for heating the semiconductor chip and the temperature (T2) for heating the electronic component may be appropriately adjusted according to the melting point of the electrode material used, but the temperature (T1) for heating the semiconductor chip is For example, it is about 200-210 degreeC, and the temperature (T2) which heats the said electronic component is about 230-240 degreeC, for example.

The sealing resin is not particularly limited, and preferably contains a curing agent and a curable compound, and the curability of the sealing resin can be controlled by a combination of the curing agent and the curable compound.
The curable compound is not particularly limited. For example, urea compound, melamine compound, phenol compound, resorcinol compound, epoxy compound, acrylic compound, polyester compound, polyamide compound, polybenzimidazole resin, diallyl phthalate compound, xylene compound, alkyl- Examples thereof include thermosetting compounds such as benzene compounds, epoxy acrylate compounds, silicon resins, urethane compounds, episulfide compounds, and bismaleimide compounds. Especially, since the obtained semiconductor chip mounting body is excellent in reliability and joining strength, an epoxy compound or an episulfide compound is preferable.

The epoxy compound is not particularly limited, and examples thereof include bisphenol type epoxy compounds such as bisphenol A type, bisphenol F type, bisphenol AD type, and bisphenol S type, novolac type epoxy compounds such as phenol novolak type and cresol novolak type, and resorcinol type epoxy. Compounds, aromatic epoxy compounds such as trisphenolmethane triglycidyl ether, naphthalene type epoxy compounds, fluorene type epoxy compounds, dicyclopentadiene type epoxy compounds, polyether modified epoxy compounds, benzophenone type epoxy compounds, aniline type epoxy compounds, NBR modified Examples thereof include epoxy compounds, CTBN-modified epoxy compounds, and hydrogenated products thereof. Among these, a benzophenone type epoxy compound is preferable because quick curability is easily obtained. These epoxy compounds may be used independently and 2 or more types may be used together.

Among the above bisphenol F-type epoxy compounds, as commercial products, for example, EXA-830-LVP, EXA-830-CRP (manufactured by DIC) and the like can be mentioned.
Among the resorcinol type epoxy compounds, as a commercially available product, for example, EX-201 (manufactured by Nagase ChemteX Corporation) and the like can be mentioned.
Among the polyether-modified epoxy compounds, as commercial products, for example, EX-931 (manufactured by Nagase ChemteX), EXA-4850-150 (manufactured by DIC), EP-4005 (manufactured by ADEKA) and the like can be mentioned.

The episulfide compound is not particularly limited as long as it has an episulfide group, and examples thereof include compounds in which the oxygen atom of the epoxy group of the epoxy compound is substituted with a sulfur atom.
Specific examples of the episulfide compound include bisphenol type episulfide compounds (compounds in which the oxygen atom of the epoxy group of the bisphenol type epoxy compound is substituted with a sulfur atom), hydrogenated bisphenol type episulfide compounds, dicyclopentadiene type episulfide compounds, and biphenyl. Type episulfide compound, phenol novolac type episulfide compound, fluorene type episulfide compound, polyether modified episulfide compound, butadiene modified episulfide compound, triazine episulfide compound, naphthalene type episulfide compound and the like. Of these, naphthalene type episulfide compounds are preferred. These episulfide compounds may be used independently and 2 or more types may be used together.
The substitution from oxygen atoms to sulfur atoms may be in at least a part of the epoxy group, or the oxygen atoms of all epoxy groups may be substituted with sulfur atoms.

Among the above-mentioned episulfide compounds, YL-7007 (hydrogenated bisphenol A type episulfide compound, manufactured by Japan Epoxy Resin Co., Ltd.) and the like can be mentioned as commercially available products. Moreover, the said episulfide compound is easily synthesize | combined from an epoxy compound, for example using sulfurizing agents, such as potassium thiocyanate and thiourea.

When the sealing resin contains the episulfide compound, the compounding amount of the episulfide compound is not particularly limited, but a preferable lower limit with respect to 100 parts by weight of the entire sealing resin is 3 parts by weight, and a preferable upper limit is 12 parts by weight, A more preferred lower limit is 6 parts by weight, and a more preferred upper limit is 9 parts by weight.

The sealing resin preferably contains a polymer compound having a functional group capable of reacting with the curable compound (hereinafter also simply referred to as a polymer compound having a functional group capable of reacting). By containing the high molecular compound which has the said functional group which can react, the sealing resin obtained improves the joining reliability at the time of the distortion | strain by a heat | fever generate | occur | producing.

When an epoxy compound is used as the curable compound as the polymer compound having a reactive functional group, for example, a polymer compound having an amino group, a urethane group, an imide group, a hydroxyl group, a carboxyl group, an epoxy group, or the like. Etc. Among these, a polymer compound having an epoxy group is preferable. By containing the high molecular compound which has the said epoxy group, the hardened | cured material of the obtained sealing resin expresses the outstanding flexibility. That is, the cured product of the sealing resin has excellent mechanical strength, heat resistance and moisture resistance derived from the epoxy compound as the curable compound, and excellent flexibility derived from the polymer compound having the epoxy group. It is excellent in cold cycle resistance, solder reflow resistance, dimensional stability, etc., and exhibits high adhesion reliability and high conduction reliability.

The polymer compound having an epoxy group is not particularly limited as long as it is a polymer compound having an epoxy group at a terminal and / or side chain (pendant position). For example, an epoxy group-containing acrylic rubber, an epoxy group-containing butadiene rubber Bisphenol type high molecular weight epoxy compound, epoxy group-containing phenoxy resin, epoxy group-containing acrylic resin, epoxy group-containing urethane resin, epoxy group-containing polyester resin and the like. Among these, an epoxy group-containing acrylic resin is preferable because it can contain a large amount of epoxy groups and the cured product of the resulting sealing resin has better mechanical strength and heat resistance. These polymer compounds having an epoxy group may be used alone or in combination of two or more.

When the polymer compound having an epoxy group, particularly an epoxy group-containing acrylic resin, is used as the polymer compound having a functional group capable of reacting, the preferred lower limit of the weight average molecular weight of the polymer compound having an epoxy group is 10,000. It is. When the weight average molecular weight of the polymer compound having an epoxy group is less than 10,000, the flexibility of the cured product of the obtained sealing resin may not be sufficiently improved.

When the polymer compound having an epoxy group, particularly an epoxy group-containing acrylic resin is used as the polymer compound having a functional group capable of reacting, the preferred lower limit of the epoxy equivalent of the polymer compound having an epoxy group is preferably 200. The upper limit is 1000. When the epoxy equivalent of the polymer compound having an epoxy group is less than 200, the flexibility of the cured sealing resin obtained may not be sufficiently improved. When the epoxy equivalent of the polymer compound having an epoxy group exceeds 1000, the mechanical strength and heat resistance of the cured encapsulated resin obtained may be lowered.

When the sealing resin contains a polymer compound having a functional group capable of reacting, the amount of the polymer compound having a functional group capable of reacting is not particularly limited, but is preferably based on 100 parts by weight of the curable compound. The lower limit is 1 part by weight, and the preferred upper limit is 30 parts by weight. When the blending amount of the polymer compound having a functional group capable of reacting is less than 1 part by weight, the resulting sealing resin may have reduced bonding reliability when heat distortion occurs. When the amount of the polymer compound having a functional group capable of reacting exceeds 30 parts by weight, the cured product of the obtained sealing resin may have reduced mechanical strength, heat resistance, and moisture resistance.

The said hardening | curing agent is not specifically limited, A conventionally well-known hardening | curing agent can be suitably selected according to the said sclerosing | hardenable compound. When an epoxy compound is used as the curable compound, examples of the curing agent include latent heat-curing acid anhydride-based curing agents such as trialkyltetrahydrophthalic anhydride, phenol-based curing agents, amine-based curing agents, and dicyandiamide. For example, a cationic curing agent and a cationic catalyst-type curing agent. These hardening | curing agents may be used independently and 2 or more types may be used together.

When the sealing resin contains the curing agent, the blending amount of the curing agent is not particularly limited, but when using a curing agent that reacts with the functional group of the curable compound in an equivalent amount, the functional group of the curable compound. It is preferable that it is 60-100 equivalent with respect to quantity. Moreover, when using the hardening | curing agent which functions as a catalyst, as for the compounding quantity of the said hardening | curing agent, a preferable minimum is 1 weight part with respect to 100 weight part of said curable compounds, and a preferable upper limit is 20 weight part.

The sealing resin preferably contains a curing accelerator in addition to the curing agent for the purpose of adjusting the curing rate or the curing temperature.
The said hardening accelerator is not specifically limited, For example, an imidazole series hardening accelerator, a tertiary amine type hardening accelerator, etc. are mentioned. Of these, imidazole-based curing accelerators are preferable because the curing rate can be easily controlled. These hardening accelerators may be used independently and 2 or more types may be used together.

The imidazole-based curing accelerator is not particularly limited. For example, 1-cyanoethyl-2-phenylimidazole in which the 1-position of imidazole is protected with a cyanoethyl group, and an imidazole-based curing accelerator whose basicity is protected with isocyanuric acid (trade name “ 2MA-OK ", manufactured by Shikoku Kasei Kogyo Co., Ltd.). These imidazole type hardening accelerators may be used independently and 2 or more types may be used together.
Examples of the curing accelerator include 2MZ, 2MZ-P, 2PZ, 2PZ-PW, 2P4MZ, C11Z-CNS, 2PZ-CNS, 2PZCNS-PW, 2MZ-A, 2MZA-PW, C11Z-A, 2E4MZ-A, 2MA-OK, 2MAOK-PW, 2PZ-OK, 2MZ-OK, 2PHZ, 2PHZ-PW, 2P4MHZ, 2P4MHZ-PW, 2E4MZ · BIS, VT, VT-OK, MAVT, MAVT-OK (above, Shikoku Chemical Industries, Ltd. Manufactured) and the like.

The compounding quantity of the said hardening accelerator is not specifically limited, A preferable minimum is 1 weight part with respect to 100 weight part of said curable compounds, and a preferable upper limit is 10 weight part.

When an epoxy compound is used as the curable compound and the curing agent and the curing accelerator are used in combination, the blending amount of the curing agent used is the theoretically required equivalent to the epoxy group in the epoxy compound to be used. The following is preferable. If the blending amount of the curing agent exceeds the theoretically required equivalent, chlorine ions may be easily eluted by moisture from a cured product obtained by curing the obtained sealing resin. That is, when the curing agent is excessive, for example, when the eluted component is extracted with hot water from the resulting cured resin of the sealing resin, the pH of the extracted water becomes about 4 to 5, so that the chloride ion from the epoxy compound. May elute in large quantities. Accordingly, it is preferable that the pH of pure water after 1 g of the resulting cured resin of the sealing resin is immersed in 10 g of pure water at 100 ° C. for 2 hours is 6 to 8, and the pH is 6.5 to 7.5. More preferably.

The sealing resin may contain a diluent in order to reduce the viscosity of the sealing resin.
The diluent preferably has an epoxy group, and the preferable lower limit of the number of epoxy groups in one molecule is 2, and the preferable upper limit is 4. If the number of epoxy groups in one molecule is less than 2, sufficient heat resistance may not be exhibited after the sealing resin is cured. If the number of epoxy groups in one molecule exceeds 4, distortion due to curing may occur, or uncured epoxy groups may remain, which may result in poor bonding strength or poor bonding due to repeated thermal stress. May occur. A more preferable upper limit of the number of epoxy groups in one molecule of the diluent is 3.
The diluent preferably has an aromatic ring and / or a dicyclopentadiene structure.

The preferable upper limit of the weight loss at 120 ° C. and the weight loss at 150 ° C. is 1%. If the weight loss at 120 ° C. and the weight loss at 150 ° C. exceed 1%, unreacted substances will volatilize during or after curing of the resulting sealing resin, resulting in productivity or obtained semiconductor chip mounting. May adversely affect body performance.
The diluent preferably has a lower curing start temperature and a higher curing rate than the curable compound.

When the said sealing resin contains the said diluent, the minimum with the preferable compounding quantity of the said diluent in the said whole sealing resin is 1 weight%, and a preferable upper limit is 20 weight%. If the blending amount of the diluent is out of the above range, the viscosity of the obtained sealing resin may not be sufficiently reduced.

The sealing resin may further contain a thixotropic agent.
By containing the thixotropy imparting agent, the viscosity behavior of the sealing resin can be adjusted to be optimal for flip chip mounting.

The thixotropy imparting agent is not particularly limited, and examples thereof include fine metal particles, calcium carbonate, fumed silica, inorganic fine particles such as aluminum oxide, boron nitride, aluminum nitride, and aluminum borate. Of these, fumed silica is preferable.
The thixotropy imparting agent may be subjected to a surface treatment as necessary. The thixotropy imparting agent subjected to the surface treatment is not particularly limited, but particles having a hydrophobic group on the surface are preferable, and specific examples include fumed silica having a hydrophobic surface.

When the thixotropy-imparting agent is in the form of particles, the average particle size of the particulate thixotropy-imparting agent is not particularly limited, but a preferred upper limit is 1 μm. When the average particle diameter of the particulate thixotropy-imparting agent exceeds 1 μm, the resulting sealing resin may not exhibit the desired thixotropy.

The blending amount of the thixotropy imparting agent in the entire sealing resin is not particularly limited, but when the thixotropy imparting agent is not surface-treated, a preferred lower limit is 0.5% by weight and a preferred upper limit is 20% by weight. is there. If the blending amount of the thixotropy-imparting agent is less than 0.5% by weight, sufficient thixotropy may not be imparted to the resulting sealing resin. When the blending amount of the thixotropy-imparting agent exceeds 20% by weight, the exclusion property of the sealing resin may be lowered when a semiconductor chip package is manufactured. A more preferable lower limit of the amount of the thixotropy-imparting agent is 3% by weight, and a more preferable upper limit is 10% by weight.

The sealing resin preferably further contains an inorganic filler.
Examples of the inorganic filler include surface-treated silica filler. Although the said surface-treated silica filler is not specifically limited, The silica filler surface-treated with the phenylsilane coupling agent is preferable.

When the sealing resin contains the inorganic filler, the blending amount of the inorganic filler in the sealing resin is not particularly limited, but a preferable lower limit with respect to 100 parts by weight of the curable compound is 30 parts by weight, and a preferable upper limit is 400 parts by weight. When the blending amount of the inorganic filler is less than 30 parts by weight, the obtained sealing resin may not be able to maintain sufficient reliability. When the compounding quantity of the said inorganic filler exceeds 400 weight part, the viscosity of sealing resin obtained may become high too much.

The sealing resin may contain an inorganic ion exchanger as necessary.
Among the inorganic ion exchangers, examples of commercially available products include IXE series (manufactured by Toagosei Co., Ltd.). When the sealing resin contains the inorganic ion exchanger, the blending amount of the inorganic ion exchanger is not particularly limited, but a preferable upper limit is 10% by weight and a preferable lower limit is 1% by weight.

The sealing resin may contain other additives such as an adhesion-imparting agent such as a bleed inhibitor and an imidazole silane coupling agent, if necessary.

The sealing resin only needs to be sandwiched between the semiconductor chip and the electronic component when the protruding electrode and the electrode portion are brought into contact with each other, and the sealing resin layer is previously formed on the semiconductor chip side. The sealing resin layer may be provided in advance on the electronic component side.

The method for providing the sealing resin layer on the semiconductor chip or electronic component is not particularly limited. For example, a method of applying a paste-like sealing resin composition to the semiconductor chip or electronic component by screen printing or the like, sheet-like sealing Examples thereof include a method of bonding a resin composition to a semiconductor chip or an electronic component. When the sheet-shaped sealing resin composition is bonded to a semiconductor chip, the sheet-shaped material having the sealing resin layer and the base material is used, and the wafer is bonded to the wafer. After performing the back grinding, the wafer may be diced into individual semiconductor chips by peeling the substrate and dicing the wafer.
When the sealing resin layer is provided on the semiconductor chip, the wafer may be diced into individual semiconductor chips after the sealing resin layer is provided on the wafer, or after the wafer is diced into individual semiconductor chips. The sealing resin layer may be provided on the semiconductor chip.

In the method for manufacturing a semiconductor chip mounting body of the present invention, the step of curing the sealing resin is then performed.
The step of curing the sealing resin may be performed separately after the step of contacting and joining the protruding electrode of the semiconductor chip and the electrode portion of the electronic component. The protruding electrode of the semiconductor chip and the electronic You may perform simultaneously with the process of contacting and joining with the electrode part of components. In order to perform better electrode bonding, the sealing resin is not completely cured in the step of contacting and bonding the protruding electrode of the semiconductor chip and the electrode part of the electronic component, and is then fully cured. It is preferable.

According to the present invention, high-accuracy electrode bonding can be performed, and even in the case of a thin semiconductor chip having a large number of protruding electrodes or a semiconductor chip having a fragile low dielectric layer, it is possible to reduce electrode bonding defects. The manufacturing method of the semiconductor chip mounting body which can be provided can be provided.

The microscope picture of the cross section exposed by grinding | polishing of the semiconductor chip mounting body obtained in Example 1 is shown. The microscope picture of the cross section exposed by grinding | polishing of the semiconductor chip mounting body obtained by the comparative example 1 is shown. The schematic diagram of an example of the process of making the protruding electrode of a semiconductor chip and the electrode part of an electronic component contact and join in the manufacturing method of the semiconductor chip mounting body of this invention is shown.

Examples of the present invention will be described in more detail with reference to the following examples, but the present invention is not limited to these examples.

Example 1
A bump having a thickness of 725 μm, a width of 7.3 mm square, and a tip having a tip (made of melting point: 210 ° C., M1) made of solder having a height of 20 μm on a square copper post having a height of 35 μm and a width of 35 μm is 50 μm. A large number of peripheral chips with a pitch were formed, and a semiconductor chip on which a daisy circuit was formed was prepared. A sealing resin solution having the composition shown in Table 1 made of the following materials was applied to the sealing area of the semiconductor chip and dried at 80 ° C. for 20 minutes to obtain a semiconductor chip on which a sealing resin layer was formed. In addition, a substrate on which a daisy circuit having an electrode portion made of solder (melting point: 230 ° C., M2) was formed was prepared. In addition, as a board | substrate, what was provided with the terminal for conduction | electrical_connection confirmation was used.
The substrate and the semiconductor chip are respectively held by a pulse heater (ADVANCED MATERIALS, 12 mm square and 35 mm square), the pulse heater holding the substrate is 220 ° C. (T2), and the pulse heater holding the semiconductor chip is 200 ° C. ( T1). The semiconductor chip was pressed against the substrate in 10N5 seconds to make contact and bonding between the bump and the electrode part, and to cure the sealing resin, thereby obtaining a semiconductor chip mounting body. The load per bump at this time was 0.009N.

(Epoxy compound)
Biphenyl type epoxy resin (trade name “YX-4000”, manufactured by Japan Epoxy Resin Co., Ltd.)
Bisphenol A type epoxy resin (trade name “1004AF”, manufactured by Japan Epoxy Resin Co., Ltd.)

(High molecular compound having a functional group capable of reacting)
Glycidyl group-containing acrylic resin (weight average molecular weight 200,000, trade name “G-2050M”, manufactured by NOF Corporation),
Glycidyl group-containing acrylic resin (weight average molecular weight 20,000, trade name “G-0250SP”, manufactured by NOF Corporation)

(Curing agent)
Trialkyltetrahydrophthalic anhydride (trade name “YH-306”, manufactured by JER)

(Curing accelerator)
2,4-Diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl-s-triazine isocyanuric acid addition salt (trade name “2MA-OK”, manufactured by Shikoku Kasei Kogyo Co., Ltd.)

(Inorganic filler)
Surface phenyl-treated inorganic filler (silica) (trade name “SE-1050-SPT”, manufactured by Admatechs)
Surface hydrophobized fumed silica (trade name “MT-10”, manufactured by Tokuyama Corporation)

(Other)
Silane coupling agent (trade name “KBM-573”, manufactured by Shin-Etsu Chemical Co., Ltd.)
Solvent Methyl ethyl ketone (MEK, Wako Pure Chemical Industries, Ltd.)

(Example 2)
A bump having a thickness of 725 μm and a width of 7.3 mm square, and having a tip made of solder having a height of 20 μm on a square copper post having a height of 35 μm and a width of 35 μm square (melting point 230 ° C., M1) is 50 μm. A large number of peripheral chips with a pitch were formed, and a semiconductor chip on which a daisy circuit was formed was prepared. A sealing resin solution having the composition shown in Table 1 made of the following materials was applied to the sealing area of the semiconductor chip and dried at 80 ° C. for 20 minutes to obtain a semiconductor chip on which a sealing resin layer was formed. In addition, a substrate on which a daisy circuit having an electrode part (melting point: 210 ° C., M2) made of solder was formed was prepared. In addition, as a board | substrate, what was provided with the terminal for conduction | electrical_connection confirmation was used.
The substrate and the semiconductor chip are respectively held by a pulse heater (ADVANCED MATERIALS, 12 mm square and 35 mm square), the pulse heater holding the substrate is 200 ° C. (T2), and the pulse heater holding the semiconductor chip is 220 ° C. ( T1). The semiconductor chip was pressed against the substrate in 10N5 seconds to make contact and bonding between the bump and the electrode part, and to cure the sealing resin, thereby obtaining a semiconductor chip mounting body. The load per bump at this time was 0.009N.

(Comparative Example 1)
In the same manner as in Example 1, a semiconductor chip on which a sealing resin layer was formed and a substrate were prepared.
Flip chip bonder (FC3000, manufactured by Toray Engineering Co., Ltd.) with a semiconductor chip pressed against the substrate with a load of 10 N, the head temperature adjusted to 280 ° C (T1) with a pulse heater, and the stage temperature adjusted to 120 ° C (T2) with a constant heater ) Was used to obtain a semiconductor chip mounting body in the same manner as in Example 1 except that the bump and the electrode portion were contacted and bonded. The load per bump at this time was 0.009N.

(Comparative Example 2)
In the same manner as in Example 1, a semiconductor chip on which a sealing resin layer was formed and a substrate were prepared.
A flip chip bonder (FC3000, manufactured by Toray Engineering Co., Ltd.), which presses a semiconductor chip against the substrate with a load of 40 N, adjusts the head temperature to 280 ° C. (T1) with a pulse heater, and the stage temperature to 120 ° C. (T2) with a constant heater. ) Was used to obtain a semiconductor chip mounting body in the same manner as in Example 1 except that the bump and the electrode portion were contacted and bonded. The load per bump at this time was 0.036N.

<Evaluation>
The following evaluation was performed about the semiconductor chip mounting body obtained by the Example and the comparative example.

(1) A resistor (manufactured by Hioki Corporation, 3541) was connected to a terminal for continuity confirmation provided on the continuity test board, and the resistance value was measured and evaluated according to the following criteria. The results are shown in Table 1. In addition, about the semiconductor chip mounting body obtained by the comparative example 1, since one part bump did not reach | attain the electrode part of a board | substrate, continuity confirmation was not able to be performed with a daisy chain.
A: The resistance value was within ± 20% of the expected value calculated from the wiring area and the number of connections.
X: The resistance value exceeded ± 20% with respect to the expected value calculated from the wiring area and the number of connections.

(2) Observation of bonding state 1
The semiconductor chip mounting body was sealed with a transparent resin to produce an observation sample. This observation sample was polished in a direction parallel to the conduction direction (direction parallel to the bump), and the shape of the bonded electrode portion was directly observed and evaluated according to the following criteria. The results are shown in Table 1. In addition, about the semiconductor chip mounting body obtained in the comparative example 2, all the bumps reached the electrode part of the substrate, but if the semiconductor chip is thin, it may be cracked, and there is a fragile low dielectric layer. It was sometimes destroyed.
○: All bumps reached the electrode part of the substrate and were bonded with high accuracy, and no cracks in the semiconductor chip were confirmed.
X: Some bumps did not reach the electrode part of the substrate, the bonding state was poor, or cracking of the semiconductor chip was confirmed.

(3) Observation of bonding state 2
Polishing was performed while pressing the semiconductor chip mounting body obtained in Example 1 and Comparative Example 1 against the SUS plate to expose the vicinity of the boundary between the electrode portion of the substrate and the bump of the semiconductor chip. The cross section exposed by polishing was observed using a metal microscope (Nikon Corporation, MM800).
As a result, in the semiconductor chip mounting body obtained in Example 1, it was confirmed that the metal was exposed in the cross sections of all the bonded electrode portions. This indicates that the resin was not interposed between the electrodes, and the electrodes were well bonded. On the other hand, for the semiconductor chip mounting body obtained in Comparative Example 1, one or more bumps were covered with resin. This indicates that the resin is present between the electrodes, and the electrodes could not be bonded well. It is considered that some of the bumps were insufficient in height and could not reach the electrode part of the substrate, so that the electrodes could not be bonded satisfactorily.

1 shows a micrograph of a cross section exposed by polishing the semiconductor chip mounting body obtained in Example 1, and FIG. 2 shows a cross section exposed by polishing of the semiconductor chip mounting body obtained in Comparative Example 1. A photomicrograph was shown.

According to the present invention, high-accuracy electrode bonding can be performed, and even in the case of a thin semiconductor chip having a large number of protruding electrodes or a semiconductor chip having a fragile low dielectric layer, it is possible to reduce electrode bonding defects. The manufacturing method of the semiconductor chip mounting body which can be provided can be provided.

DESCRIPTION OF SYMBOLS 1 Bonding head 2 Protruding electrode 3 Substrate electrode part 4 Stage 5 Sealing resin

Claims (1)

A step of pressing and heating the semiconductor chip and the electronic component to different temperatures through the sealing resin to contact and join the protruding electrode of the semiconductor chip and the electrode portion of the electronic component;
A method of manufacturing a semiconductor chip mounting body including a step of curing the sealing resin,
In the step of contacting and joining the protruding electrode of the semiconductor chip and the electrode portion of the electronic component, the melting point of the tip portion of the protruding electrode of the semiconductor chip is M1, the melting point of the electrode portion of the electronic component is M2, Semiconductor chip mounting body satisfying T1 <M1 <T2 <M2 or T2 <M2 <T1 <M1, where T1 is a temperature for heating the semiconductor chip and T2 is a temperature for heating the electronic component. Manufacturing method.