JP5629168B2 - Manufacturing method of semiconductor chip mounting body and semiconductor device - Google Patents

Description

The present invention provides a semiconductor chip mounting body that is excellent in adhesive filling properties, can suppress void biting and resin shrinkage, and can adjust the protrusion of the adhesive from the semiconductor chip bonding region. Regarding the method. The present invention also relates to a semiconductor device using the method for manufacturing a semiconductor chip package.

In recent years, with the demand for miniaturization of semiconductor packages, semiconductor chips have become extremely thin films, and bonding wires connected to the semiconductor chips have also been miniaturized. In addition, since an extremely thin semiconductor chip can be formed, a movement toward a three-dimensional mounting in which a plurality of semiconductor chips are stacked to form a multilayer semiconductor chip mounting body is also progressing.

In such a miniaturized semiconductor package, it is required to join the semiconductor chips without damage and in a horizontal state during manufacture.
On the other hand, the inventor can obtain a highly reliable electronic device such as a semiconductor device while maintaining a high accuracy in the distance between the electronic components when joining electronic components such as two or more semiconductor chips. As an adhesive for electronic components, it contains an adhesive composition having a curable compound and a curing agent, and spacer particles having a CV value of 10% or less, and the viscosity is measured at 25 ° C. using an E-type viscometer. Invented an adhesive for electronic parts exhibiting a predetermined viscosity characteristic when disclosed in Patent Document 1. The adhesive for electronic components described in Patent Document 1 is designed on the assumption that excessive adhesive for electronic components protrudes by pressing and the distance between the electronic components is reduced to a desired distance.

On the other hand, in recent years, in manufacturing a miniaturized semiconductor package, it is also important to adjust the protrusion of the adhesive from the semiconductor chip in order to prevent contamination of the wire bonding pad and the like by the adhesive. However, if the amount of the adhesive used is reduced to adjust the protrusion, the adhesive does not spread over the entire bonding surface of the semiconductor chip, and a cavity is formed after the mold sealing, resulting in a decrease in adhesive reliability. It is not easy to adjust the protrusion while ensuring the filling property.

On the other hand, for example, in Patent Document 2, a component is added to the adhesive paste for the purpose of controlling the wetting and spreading of the adhesive paste by a simpler method and allowing the components to be placed close to each other on the substrate. A die mounting method for pressing and fixing, a step of forming an adhesive paste in a predetermined region of a member, a step of pressing a component against the adhesive paste with a predetermined pressure, and when the adhesive paste protrudes from a component planar shape region And a step of stopping the pressing of the component and leaving it for a predetermined time. However, the method described in Patent Document 2 has a problem that sufficient adhesion reliability cannot be obtained depending on the types of the semiconductor chip and the substrate.

International Publication No. 08/010555 Pamphlet JP 2003-188192 A

The present invention provides a semiconductor chip mounting body that is excellent in adhesive filling properties, can suppress void biting and resin shrinkage, and can adjust the protrusion of the adhesive from the semiconductor chip bonding region. It aims to provide a method. Another object of the present invention is to provide a semiconductor device using the method for manufacturing a semiconductor chip package.

The present invention relates to a method of manufacturing a semiconductor chip mounting body in which a semiconductor chip and a substrate or another semiconductor chip are bonded to each other in 40 to 90% of a semiconductor chip bonding region on the substrate or another semiconductor chip. A semiconductor chip on the substrate or the other semiconductor chip by laminating the semiconductor chip on the substrate or the other semiconductor chip via the step (1) of applying the adhesive for the semiconductor and the adhesive for a semiconductor component A step (2) of wetting and spreading the adhesive for a semiconductor component to 60% or more and less than 100% of the bonding region, and the semiconductor on the entire semiconductor chip bonding region on the substrate or another semiconductor chip at room temperature; A step (3) of wetting and spreading the component adhesive, and a step (4) of curing the semiconductor component adhesive, the semiconductor chip and the substrate or another semiconductor chip. Has a thickness of 50 to 300 μm, and the adhesive for semiconductor parts has a viscosity at 0.5 rpm of 20 to 40 Pa · s and a viscosity at 10 rpm of 10 when measured using an E-type viscometer at 25 ° C. It is a manufacturing method of the semiconductor chip mounting body which is -30 Pa.s.
The present invention is described in detail below.

In order to adjust the protrusion at the same time while ensuring the filling property of the adhesive, it is considered important to control the viscosity of the adhesive. However, the present inventor usually considers that when the adhesive has a low viscosity, the filling property is improved and sufficient adhesion reliability is obtained, whereas the thickness of the semiconductor chip and the substrate is 50 to 300 μm. In such a case, it is not possible to obtain sufficient adhesion reliability only by reducing the viscosity of the adhesive, and further, the cause of such a decrease in adhesion reliability is that the occurrence of void biting and resin shrinkage. I found out.
The present inventor has disclosed a semiconductor component that exhibits a predetermined viscosity characteristic when measured using an E-type viscometer at 25 ° C. in a method of manufacturing a semiconductor chip package in which a semiconductor chip and a substrate or another semiconductor chip are joined. By using the adhesive for a predetermined process, even if the thickness of the semiconductor chip and the substrate or another semiconductor chip is 50 to 300 μm, the filling property of the adhesive is ensured, It has been found that it is possible to suppress void biting and resin shrinkage, and to adjust the protrusion of the adhesive from the semiconductor chip bonding region, thereby completing the present invention.

The manufacturing method of a semiconductor chip mounting body of the present invention is a manufacturing method of a semiconductor chip mounting body in which a semiconductor chip and a substrate or another semiconductor chip are joined. Moreover, in the manufacturing method of the semiconductor chip mounting body of this invention, the thickness of the said semiconductor chip and the said board | substrate or another semiconductor chip is 50-300 micrometers.
In the method for manufacturing a semiconductor chip mounting body of the present invention, a semiconductor chip mounting body may be manufactured by bonding a semiconductor chip to a substrate. For example, other methods such as a semiconductor chip bonded to a substrate may be used. A semiconductor chip may be further bonded to the semiconductor chip to manufacture a multilayer semiconductor chip package.

In the method for manufacturing a semiconductor chip package according to the present invention, first, a process (1) (application process (1) of applying an adhesive for a semiconductor component to 40 to 90% of a semiconductor chip bonding region on a substrate or another semiconductor chip. )).

In the coating step (1), the adhesive for semiconductor components can be applied while suppressing the biting of voids, because the adhesive for semiconductor components has viscosity characteristics as described later.
In the present specification, the semiconductor chip bonding region means a region on a substrate or another semiconductor chip to which a semiconductor chip bonded by the method for manufacturing a semiconductor chip mounting body of the present invention is in contact.

When the region to which the adhesive for semiconductor components is applied is less than 40% of the semiconductor chip bonding region, when the step (3) for wetting and spreading the adhesive for semiconductor components described later is performed, the adhesive for semiconductor components is Since the entire semiconductor chip bonding region does not wet and spread and the filling property is lowered, the obtained semiconductor chip mounting body lacks reliability. When the region to which the adhesive for semiconductor components is applied exceeds 90% of the semiconductor chip bonding region, the semiconductor component that protrudes from the semiconductor chip bonding region after the step (3) of wetting and spreading the adhesive for semiconductor components described later The amount of the adhesive for use increases, and it becomes difficult to wire bond the obtained semiconductor chip mounting body. The region to which the semiconductor component adhesive is applied is preferably 60 to 90% of the semiconductor chip bonding region.
In addition, in this specification, the area | region which apply | coats the adhesive for semiconductor components is drawn on the outermost part of the apply | coated adhesive for semiconductor components with a straight line, and the area | region inside one or more polygons formed with the straight line And the sum of the areas.

The method for applying the adhesive for semiconductor components is not particularly limited, and examples thereof include a method for applying using a combination of a syringe equipped with a precision nozzle and a dispenser.

The adhesive for semiconductor components has a viscosity at 0.5 rpm of 20 to 40 Pa · s and a viscosity at 10 rpm of 10 to 30 Pa · s when measured using an E-type viscometer at 25 ° C.
By using an adhesive for semiconductor components exhibiting such a viscosity characteristic, in the method for manufacturing a semiconductor chip mounting body of the present invention, the filling property of the adhesive is ensured, and the biting of the void and the resin shrinkage are suppressed. Furthermore, the protrusion of the adhesive from the semiconductor chip bonding region can be adjusted.

If the viscosity at 0.5 rpm is less than 20 Pa · s, for example, when the substrate is warped, the resin component of the adhesive for semiconductor components is pulled, so that the obtained semiconductor chip mounting body lacks reliability. When the viscosity at 0.5 rpm exceeds 40 Pa · s, when the step (3) of wetting and spreading the adhesive for semiconductor components described later is performed, the adhesive for semiconductor components does not spread and spread over the entire semiconductor chip bonding region, Since the filling property is lowered, the obtained semiconductor chip mounting body lacks reliability. The said adhesive for semiconductor components has a preferable lower limit of 25 Pa · s and a preferable upper limit of 35 Pa · s at 0.5 rpm when measured with an E-type viscometer at 25 ° C.

If the viscosity at 10 rpm is less than 10 Pa · s, voids are generated in the step (3) of wetting and spreading the adhesive for semiconductor components, which will be described later, so that the obtained semiconductor chip mounting body lacks reliability. If the viscosity at 10 rpm exceeds 30 Pa · s, voids are generated in the coating step (1), and the obtained semiconductor chip mounting body lacks reliability. The above-mentioned adhesive for semiconductor components has a preferred lower limit of 13 Pa · s and a preferred upper limit of 25 Pa · s at 10 rpm when measured using an E-type viscometer at 25 ° C.

The adhesive for semiconductor components is not particularly limited as long as it has the above-described viscosity characteristics, but preferably contains an adhesive composition containing a curable compound and a curing agent.
The curable compound is not particularly limited, and a compound that is cured by addition polymerization, polycondensation, polyaddition, addition condensation, or ring-opening polymerization reaction can be used. Specific examples of the curable compound include urea resin, melamine resin, phenol resin, resorcinol resin, epoxy resin, acrylic resin, polyester resin, polyamide resin, polybenzimidazole resin, diallyl phthalate resin, xylene resin, alkyl -Thermosetting compounds such as benzene resin, epoxy acrylate resin, silicon resin, urethane resin and the like. Especially, since the reliability and joining strength of the semiconductor chip mounting body obtained are excellent, an epoxy resin and an acrylic resin are preferable, and an epoxy resin having an imide skeleton is more preferable.

The epoxy resin is not particularly limited. For example, bisphenol type epoxy resins such as bisphenol A type, bisphenol F type, bisphenol AD type and bisphenol S type, novolac type epoxy resins such as phenol novolak type and cresol novolak type, resorcinol type epoxy Resin, aromatic epoxy resin such as trisphenolmethane triglycidyl ether, naphthalene type epoxy resin, fluorene type epoxy resin, dicyclopentadiene type epoxy resin, polyether modified epoxy resin, NBR modified epoxy resin, CTBN modified epoxy resin, and These hydrogenated products can be mentioned. Of these, bisphenol F-type epoxy resins, resorcinol-type epoxy resins, and polyether-modified epoxy resins are preferred because an adhesive for semiconductor components having a low viscosity can be obtained.

Among the bisphenol F-type epoxy resins, examples of commercially available products include EXA-830-LVP, EXA-830-CRP (manufactured by DIC). Moreover, EX-201 (made by Nagase ChemteX Corporation) etc. are mentioned as a commercial item among the said resorcinol type epoxy resins. Moreover, EX-931 (made by Nagase ChemteX), EXA-4850-150 (made by DIC), EP-4005 (made by ADEKA) etc. are mentioned as a commercial item among the said polyether modified epoxy resins. .

The above-mentioned curable compound has a preferable upper limit of moisture absorption of 1.5% and a more preferable upper limit of 1.1%. Examples of the curable compound having such a moisture absorption rate include naphthalene type epoxy resins, fluorene type epoxy resins, dicyclopentadiene type epoxy resins, phenol novolac type epoxy resins, cresol novolac type epoxy resins and the like.

The said hardening | curing agent is not specifically limited, A conventionally well-known hardening | curing agent can be suitably selected according to the said sclerosing | hardenable compound. When using an epoxy resin as the curable compound, examples of the curing agent include latent heat-curing acid anhydride-based curing agents such as trialkyltetrahydrophthalic anhydride, phenol-based curing agents, amine-based curing agents, and dicyandiamide. For example, a cationic curing agent and a cationic catalyst-type curing agent. These curing agents may be used alone or in combination of two or more.

Although the compounding quantity of the said hardening | curing agent is not specifically limited, When using the hardening | curing agent which reacts equally with the functional group of the said sclerosing | hardenable compound, it is 60-100 equivalent with respect to the functional group amount of the said sclerosing | hardenable compound. preferable. Moreover, when using the hardening | curing agent which functions as a catalyst, as for the compounding quantity of the said hardening | curing agent, a preferable minimum is 1 weight part with respect to 100 weight part of said curable compounds, and a preferable upper limit is 20 weight part.

The adhesive composition may contain a curing accelerator in addition to the curing agent in order to adjust the curing speed, physical properties of the cured product, and the like.

The said hardening accelerator is not specifically limited, For example, an imidazole series hardening accelerator, a tertiary amine type hardening accelerator, etc. are mentioned. Of these, an imidazole curing accelerator is preferred because it is easy to control the reaction system for adjusting the curing speed and the physical properties of the cured product. These hardening accelerators may be used independently and may use 2 or more types together.

The imidazole-based curing accelerator is not particularly limited. For example, 1-cyanoethyl-2-phenylimidazole in which the 1-position of imidazole is protected with a cyanoethyl group, an imidazole-based curing accelerator whose basicity is protected with isocyanuric acid (trade name “ 2MA-OK ", manufactured by Shikoku Kasei Kogyo Co., Ltd.). These imidazole type hardening accelerators may be used independently and may use 2 or more types together.

Examples of the curing accelerator include 2MZ, 2MZ-P, 2PZ, 2PZ-PW, 2P4MZ, C11Z-CNS, 2PZ-CNS, 2PZCNS-PW, 2MZ-A, 2MZA-PW, C11Z-A, 2E4MZ- A, 2MA-OK, 2MAOK-PW, 2PZ-OK, 2MZ-OK, 2PHZ, 2PHZ-PW, 2P4MHZ, 2P4MHZ-PW, 2E4MZ ・ BIS, VT, VT-OK, MAVT, MAVT-OK (above, Shikoku Chemicals (Manufactured by Kogyo) and the like.

The compounding quantity of the said hardening accelerator is not specifically limited, A preferable minimum is 1 weight part with respect to 100 weight part of said curable compounds, and a preferable upper limit is 10 weight part.

When an epoxy resin is used as the curable compound and the curing agent and the curing accelerator are used in combination, the blending amount of the curing agent is the theoretically required equivalent to the epoxy group in the epoxy resin. The following is preferable. If the blending amount of the curing agent exceeds the theoretically required equivalent, chlorine ions may be easily eluted by moisture from a cured product obtained by curing the adhesive for semiconductor components. That is, when the curing agent is excessive, for example, when the eluted component is extracted with hot water from the cured product of the obtained adhesive for semiconductor components, the pH of the extracted water becomes about 4 to 5, so that from the epoxy resin Large amounts of chloride ions may elute. Accordingly, it is preferable that the pH of pure water after 6 g of the cured product of the adhesive for semiconductor parts obtained is immersed in 10 g of pure water at 100 ° C. for 2 hours is 6-8, and the pH is 6.5-7. 5 is more preferable.

The adhesive composition may contain a diluent in order to reduce the viscosity.
The diluent preferably has an epoxy group, and the preferable lower limit of the number of epoxy groups in one molecule is 2, and the preferable upper limit is 4. If the number of epoxy groups in one molecule is less than 2, sufficient heat resistance may not be exhibited after curing of the adhesive for semiconductor components. If the number of epoxy groups in one molecule exceeds 4, distortion due to curing may occur, or uncured epoxy groups may remain, which may result in poor bonding strength or poor bonding due to repeated thermal stress. May occur. A more preferable upper limit of the number of epoxy groups in one molecule of the diluent is 3.
The diluent preferably has an aromatic ring and / or a dicyclopentadiene structure.

The preferable upper limit of the weight loss at 120 ° C. and the weight loss at 150 ° C. is 1%. If the weight loss at 120 ° C. and the weight loss at 150 ° C. exceed 1%, unreacted substances will volatilize during or after curing of the adhesive for semiconductor components, and productivity or obtained semiconductor chip mounting May adversely affect body performance.
The diluent preferably has a lower curing start temperature and a higher curing rate than other curable compounds.

The preferable lower limit of the amount of the diluent in the adhesive composition is 1% by weight, and the preferable upper limit is 20% by weight. If the blending amount of the diluent is outside the above range, the viscosity of the adhesive composition may not be sufficiently reduced.

The adhesive for semiconductor parts preferably contains spacer particles having a CV value of 10% or less.
By containing the spacer particles having the CV value of 10% or less, it becomes possible to keep the distance between the chips constant. For example, a multilayer semiconductor chip mounting body can be formed using the method for manufacturing a semiconductor chip mounting body of the present invention. When manufacturing, it is not necessary to interpose a dummy chip or the like. In this specification, the inter-chip distance means both the distance between the substrate and the semiconductor chip and the distance between the semiconductor chips.
When the CV value of the spacer particles exceeds 10%, the particle size varies greatly, so that it is difficult to keep the distance between the chips constant, and the function as the spacer particles may not be performed sufficiently. A more preferable upper limit of the CV value of the spacer particles is 6%, and an even more preferable upper limit is 4%.

In addition, in this specification, CV value is a numerical value calculated | required by following formula (1).
CV value of particle diameter (%) = (σ2 / Dn2) × 100 (1)
In formula (1), σ2 represents the standard deviation of the particle diameter, and Dn2 represents the number average particle diameter.

The average particle diameter of the spacer particles having the CV value of 10% or less (hereinafter also simply referred to as spacer particles) is not particularly limited and can be appropriately selected so as to achieve a desired inter-chip distance. Is 5 μm, and a preferable upper limit is 200 μm. If the average particle size of the spacer particles is less than 5 μm, it may be difficult to reduce the distance between the chips to the particle size of the spacer particles. When the average particle diameter of the spacer particles exceeds 200 μm, the distance between the chips may be unnecessarily large. The more preferable lower limit of the average particle diameter of the spacer particles is 9 μm, and the more preferable upper limit is 50 μm.

The average particle diameter of the spacer particles is preferably 1.2 times or more the average particle diameter of solid components other than the spacer particles added to the adhesive for semiconductor components. If the average particle size of the spacer particles is less than 1.2 times the average particle size of the solid components other than the spacer particles, it may be difficult to reliably reduce the distance between the chips to about the particle size of the spacer particles. is there. The average particle size of the spacer particles is more preferably 1.3 times or more the average particle size of solid components other than the spacer particles.

The spacer particles represented by the following Formula (2) preferably the lower limit is 980 N / mm ² of K value represented by, and the desirable upper limit is 4900 N / mm ^{2.
K = (3 / √2) ·} F · S -3/2 · R -1/2 (2)
In Formula (2), F and S represent the load value (kgf) and compression displacement (mm) in 10% compression deformation of the spacer particles, respectively, and R represents the radius (mm) of the spacer particles.

The K value can be measured by the following measuring method.
First, after dispersing spacer particles on a steel plate having a smooth surface, one spacer particle is selected from the spacer particles, and the spacer particles are applied to the smooth end face of a diamond cylinder having a diameter of 50 μm using a micro compression tester. Compress. At this time, the compression load is electrically detected as an electromagnetic force, and the compression displacement is electrically detected as a displacement by a differential transformer. Then, a load value and a compression displacement in 10% compression deformation are obtained from the obtained compression displacement-load relationship, and a K value is calculated from the obtained result.

The preferable lower limit of the compression recovery rate when the spacer particles are released from the 10% compression deformation state at 20 ° C. is 20%. By using spacer particles having such a compression recovery rate, even when spacer particles larger than the average particle diameter are present between the semiconductor chip and the substrate or another semiconductor chip, the shape is caused by compression deformation. Can be recovered and used as a gap adjusting material. Therefore, the semiconductor chips can be stacked horizontally at a more stable constant interval.

The compression recovery rate can be measured by the following measuring method.
The compression displacement is electrically detected as the displacement by the differential transformer by the same method as the measurement of the K value above, and after compressing to the reverse load value, the load is reduced, and the relationship between the load and the compression displacement at that time Measure. The compression recovery rate is calculated from the obtained measurement result. However, the end point in the removal load is not a load value of zero but an origin load value of 0.1 g or more.

The material of the spacer particles is not particularly limited, but is preferably resin particles.
The resin constituting the resin particles is not particularly limited. For example, polyethylene, polypropylene, polymethylpentene, polyvinyl chloride, polytetrafluoroethylene, polystyrene, polymethyl methacrylate, polyethylene terephthalate, polybutylene terephthalate, polyamide, polyimide , Polysulfone, polyphenylene oxide, polyacetal and the like.

Moreover, since it is easy to adjust the hardness and compression recovery rate of spacer particle | grains, and heat resistance can be improved, crosslinked resin is preferable as resin which comprises the said resin particle.
The cross-linked resin is not particularly limited. For example, epoxy resin, phenol resin, melamine resin, unsaturated polyester resin, divinylbenzene polymer, divinylbenzene-styrene copolymer, divinylbenzene- (meth) acrylic ester copolymer And resins having a network structure such as diallyl phthalate polymer, triallyl isocyanurate polymer, and benzoguanamine polymer. Of these, divinylbenzene polymer, divinylbenzene-styrene copolymer, divinylbenzene- (meth) acrylate copolymer, diallyl phthalate polymer, and the like are preferable. By using these cross-linked resins, the spacer particles are excellent in resistance to heat treatment processes such as the curing process of the adhesive for semiconductor components and the solder reflow process.

The spacer particles are preferably surface-treated as necessary. By subjecting the spacer particles to a surface treatment, it is possible to realize the above-described viscosity characteristics in the obtained adhesive for semiconductor components.
Although the method of the said surface treatment is not specifically limited, For example, when the said adhesive composition shows hydrophobicity as a whole, it is preferable to provide a hydrophilic group on the surface. A method for imparting a hydrophilic group to the surface is not particularly limited. For example, when the resin particles are used as spacer particles, a method of treating the surface of the resin particles with a coupling agent having a hydrophilic group can be used.

The spacer particles are preferably spherical. The preferable upper limit of the aspect ratio of the spacer particles is 1.1. By setting the aspect ratio to 1.1 or less, the distance between chips can be kept stable and constant.
In the present specification, the aspect ratio means the ratio of the length of the major axis to the length of the minor axis of the particle (a value obtained by dividing the length of the major axis by the length of the minor axis). The closer the aspect ratio value is to 1, the closer the shape of the spacer particle is to a true sphere.

The preferable lower limit of the blending amount of the spacer particles in the adhesive for semiconductor components is 0.01% by weight, and the preferable upper limit is 5% by weight. When the blending amount of the spacer particles is less than 0.01% by weight, the distance between the chips may not be stably kept constant. When the amount of the spacer particles exceeds 5% by weight, the function of the obtained adhesive for semiconductor parts as an adhesive may be deteriorated.

When the adhesive for semiconductor components contains a solid component having a particle diameter equal to or larger than the average particle diameter of the spacer particles in addition to the spacer particles, the preferred upper limit of the amount of such solid components is 1 weight. %.
The melting point of the solid component having a particle diameter equal to or larger than the average particle diameter of the spacer particles is preferably equal to or lower than the curing temperature of the adhesive for semiconductor components.
The maximum particle size of the solid component having a particle size equal to or larger than the average particle size of the spacer particles is preferably 1.1 to 1.5 of the average particle size of the spacer particles, and 1.1 to 1.2. More preferably.

It is preferable that the adhesive for semiconductor components further contains a thixotropic agent. By containing the thixotropy imparting agent, the obtained adhesive for semiconductor components can achieve a desired viscosity behavior.
The thixotropy imparting agent is not particularly limited, and examples thereof include fine metal particles, calcium carbonate, fumed silica, inorganic fine particles such as aluminum oxide, boron nitride, aluminum nitride, and aluminum borate. Of these, fumed silica is preferable.

Moreover, as the thixotropy-imparting agent, a thixotropy-imparting agent subjected to surface treatment can be used as necessary. In particular, it is preferable to use particles having a hydrophilic group on the surface as the thixotropic agent. Specific examples of the particles having a hydrophilic group on the surface include fumed silica having a hydrophilic group on the surface.

When a particulate thixotropy imparting agent is used as the thixotropy imparting agent, the preferable upper limit of the average particle diameter is 1 μm. When the average particle diameter of the thixotropy-imparting agent exceeds 1 μm, the obtained adhesive for semiconductor components may not exhibit desired thixotropic properties.

Although the compounding quantity of the said thixotropy imparting agent in the said adhesive for semiconductor components is not specifically limited, A preferable minimum is 0.5 weight% and a preferable upper limit is 20 weight%. If the blending amount of the thixotropy-imparting agent is less than 0.5% by weight, sufficient thixotropy may not be imparted to the resulting adhesive for semiconductor components. When the blending amount of the thixotropy-imparting agent exceeds 20% by weight, the exclusion property of the resulting adhesive for semiconductor components may be lowered. A more preferable lower limit of the amount of the thixotropy-imparting agent is 3% by weight, and a more preferable upper limit is 10% by weight.

It is preferable that the adhesive for semiconductor components further contains a polymer compound having a functional group capable of reacting with the curable compound. By including such a polymer compound, the bonding reliability when heat distortion occurs is improved.

In the case of using an epoxy resin as the curable compound as a polymer compound having a functional group capable of reacting with the curable compound, for example, an amino group, a urethane group, an imide group, a hydroxyl group, a carboxyl group, an epoxy group, etc. For example, a polymer compound. Among these, a polymer compound having an epoxy group is preferable.
By adding the polymer compound having the epoxy group, the cured product of the adhesive for semiconductor components has excellent mechanical strength, heat resistance and moisture resistance derived from the epoxy resin as the curable compound, and the above It has excellent flexibility derived from a polymer compound having an epoxy group, and has excellent heat cycle resistance, solder reflow resistance, dimensional stability, etc., and has high adhesion reliability or high conduction reliability. Expresses sex.

The polymer compound having an epoxy group is not particularly limited as long as it is a polymer compound having an epoxy group at the terminal and / or side chain (pendant position). For example, an epoxy group-containing acrylic rubber, an epoxy group-containing butadiene rubber, Examples thereof include bisphenol type high molecular weight epoxy resin, epoxy group-containing phenoxy resin, epoxy group-containing acrylic resin, epoxy group-containing urethane resin, and epoxy group-containing polyester resin. Among these, an epoxy group-containing acrylic resin is preferable because a polymer compound containing a large amount of epoxy groups can be obtained, and the cured product has better mechanical strength or heat resistance. These polymer compounds having an epoxy group may be used alone or in combination of two or more.

As the polymer compound having a functional group capable of reacting with the curable compound, the polymer compound having the epoxy group, particularly when the epoxy group-containing acrylic resin is used, the weight average molecular weight of the polymer compound having the epoxy group is A preferred lower limit is 10,000. When the weight average molecular weight is less than 10,000, the film forming property of the adhesive for semiconductor components is insufficient, and the flexibility of the cured product of the adhesive for semiconductor components may not be sufficiently improved.

As the polymer compound having a functional group capable of reacting with the curable compound, a polymer compound having the epoxy group, particularly when an epoxy group-containing acrylic resin is used, the epoxy equivalent of the polymer compound having the epoxy group is preferable. The lower limit is 200, and the preferable upper limit is 1000. If the epoxy equivalent is less than 200, the flexibility of the cured product of the adhesive for semiconductor components may not be sufficiently improved. When the epoxy equivalent exceeds 1000, the mechanical strength or heat resistance of the cured product of the adhesive for semiconductor components may be insufficient.

The compounding amount of the polymer compound having a functional group capable of reacting with the curable compound in the adhesive for semiconductor components is not particularly limited, but a preferable lower limit is preferably 1 part by weight with respect to 100 parts by weight of the curable compound. The upper limit is 30 parts by weight. When the compounding amount of the polymer compound having a functional group capable of reacting with the curable compound is less than 1 part by weight, the semiconductor component adhesive may not have sufficient reliability against thermal strain. When the compounding quantity of the high molecular compound which has a functional group which can react with the said sclerosing | hardenable compound exceeds 30 weight part, the heat resistance of the adhesive for semiconductor components may fall.

It is preferable that the adhesive for semiconductor components further contains a surface-treated silica filler. Although the said surface-treated silica filler is not specifically limited, The silica filler surface-treated with the phenylsilane coupling agent is preferable.

Although the compounding quantity of the said surface-treated silica filler in the said adhesive for semiconductor components is not specifically limited, A preferable minimum is 30 weight part and a preferable upper limit is 400 weight part with respect to 100 weight part of said curable compounds. When the compounding amount of the surface-treated silica filler is less than 30 parts by weight, the obtained adhesive for semiconductor components may not be able to maintain sufficient reliability. When the compounding amount of the surface-treated silica filler exceeds 400 parts by weight, the viscosity of the resulting adhesive for semiconductor components may become too high, resulting in a decrease in coating stability.

The said adhesive for semiconductor components may contain a solvent as needed.
The solvent is not particularly limited, and examples thereof include aromatic hydrocarbons, chlorinated aromatic hydrocarbons, chlorinated aliphatic hydrocarbons, alcohols, esters, ethers, ketones, glycol ethers (cellosolves), and fats. Examples thereof include cyclic hydrocarbons and aliphatic hydrocarbons.

The said adhesive for semiconductor components may contain an inorganic ion exchanger as needed.
Among the inorganic ion exchangers, examples of commercially available products include IXE series (manufactured by Toagosei Co., Ltd.). The upper limit with the preferable compounding quantity of the said inorganic ion exchanger in the said adhesive agent for semiconductor components is 10 weight%, and a preferable minimum is 1 weight%.

The said adhesive for semiconductor components may contain other additives, such as adhesive imparting agents, such as a bleed inhibitor and an imidazole silane coupling agent, as needed.

The method for producing the adhesive for semiconductor components is not particularly limited. For example, the adhesive composition containing the curable compound and the curing agent has a functional group capable of reacting with the curable compound as necessary. A method of blending the spacer particles after blending a predetermined amount of the polymer compound, the thixotropy-imparting agent, other additives, and the like is mentioned.
The mixing method is not particularly limited, and examples thereof include a method using a homodisper, a universal mixer, a Banbury mixer, a kneader and the like.

In the method for manufacturing a semiconductor chip package according to the present invention, the semiconductor chip is then stacked on the substrate or another semiconductor chip via the adhesive for semiconductor components, whereby the substrate or other semiconductor chip is stacked. A step (2) (also referred to as a laminating step (2)) of wetting and spreading the adhesive for semiconductor components to 60% or more and less than 100% of the semiconductor chip bonding region is performed.
In the stacking step (2), the semiconductor chip is stacked by aligning the substrate or another semiconductor chip with the semiconductor component adhesive.

When the region for wetting and spreading the adhesive for semiconductor components is less than 60% of the semiconductor chip bonding region, when the step (3) for wetting and spreading the adhesive for semiconductor components described later is performed, the adhesive for semiconductor components However, since the entire semiconductor chip bonding region does not get wet and the filling property is lowered, the obtained semiconductor chip mounting body lacks reliability. If the region where the adhesive for semiconductor components is wetted and spreads is 100% or more of the semiconductor chip bonding region, the semiconductor chip bonding region protrudes after the step (3) of wetting and spreading the adhesive for semiconductor components described later. The amount of the adhesive for semiconductor components increases, making it difficult to wire bond to the resulting semiconductor chip package.

In the lamination step (2), it is preferable to press the semiconductor chip laminated on the substrate or another semiconductor chip. By pressing, the adhesive for a semiconductor component can be wetted and spread in the above-mentioned range, and when the adhesive for a semiconductor component contains the spacer particles, the semiconductor chip is formed by the spacer particles. And the substrate or another semiconductor chip can be stacked so as to be supported.

The pressing is preferably performed at a pressure of 0.01 to 1.0 MPa for 0.1 to 5 seconds. By pressing with the pressure and time within the above range, the adhesive for semiconductor components can be wetted and spread within the above range. The pressing is more preferably performed at a pressure of 0.05 to 0.5 MPa.

In the laminating step (2), it is preferable to reduce the inter-chip distance to 1 to 3 times the desired inter-chip distance by performing the pressing. At this time, when the adhesive for semiconductor components contains the spacer particles and the distance between chips is larger than the particle diameter of the spacer particles, the semiconductor in the step (3) of wetting and spreading the adhesive for semiconductor components described later It is preferable that the difference between the distance between the chips and the particle diameter of the spacer particles is 10 μm or less by wetting and spreading the adhesive for a semiconductor component over the entire chip bonding region.

In the method for manufacturing a semiconductor chip package according to the present invention, next, the step (3) of wetting and spreading the adhesive for a semiconductor component over the entire semiconductor chip bonding region on the substrate or another semiconductor chip at room temperature. Step (also referred to as step (3)) of spreading the adhesive for semiconductor components is performed.
In the present specification, room temperature means a temperature of about 10 to 35 ° C.

In the step (3) of wetting and spreading the adhesive for semiconductor components, the adhesive for semiconductor components has the above-mentioned viscosity characteristics, so that the semiconductor chip bonding is performed at room temperature while suppressing the biting of voids. The adhesive for a semiconductor component can be wetted and spread over the entire region.
Further, at this time, the adhesive for semiconductor components is held between the semiconductor chip and the substrate or another semiconductor chip by surface tension. By allowing the adhesive for a semiconductor component to be cured in the curing step (4) described later while being held in this manner, the protrusion of the adhesive from the semiconductor chip bonding region can be adjusted.

FIG. 1 schematically shows the state immediately after the laminating step (2), and FIG. 2 shows the state immediately after the step (3) of spreading the adhesive for semiconductor components. In FIG. 1, a semiconductor chip 2 is laminated on a substrate or another semiconductor chip 1 via an adhesive 3 for semiconductor components. In FIG. 2, the semiconductor part adhesive 3 spreads over the entire semiconductor chip bonding region and is held between the semiconductor chip 2 and the substrate or another semiconductor chip 1 by surface tension.

On the other hand, the coating step (1), the laminating step (2), or the step (3) of wetting and spreading the adhesive for semiconductor components is not properly performed, and the adhesive for semiconductor components 3 is not held by surface tension and the semiconductor. FIG. 3 schematically shows a state of protruding from the chip bonding region. When the amount of the adhesive for semiconductor components that protrudes from the semiconductor chip bonding region increases, it becomes difficult to wire bond to the obtained semiconductor chip mounting body.

The method for wet-spreading the adhesive for semiconductor components is not particularly limited, and examples thereof include a method of leaving the adhesive for semiconductor components at room temperature for about 5 to 30 minutes.

In the step (3) of wetting and spreading the semiconductor component adhesive, it is preferable to partially form fillets at two or more portions of the semiconductor chip bonding region.
In addition, in this specification, a fillet means the part which protruded from the semiconductor chip joining area | region of the adhesive for semiconductor components. Further, in this specification, forming a fillet partially at two or more parts of a semiconductor chip bonding region is not the entire periphery of the semiconductor chip bonding region, for example, a part of the semiconductor chip bonding region such as a corner or a side. Among them, it means that a fillet is partially formed at two or more locations.

In the manufacturing method of the semiconductor chip mounting body of the present invention, the semiconductor chip bonding region is obtained by wetting and spreading the semiconductor component adhesive to the entire semiconductor chip bonding region in the step (3) of wetting and spreading the semiconductor component bonding agent. The amount of adhesive protruding from, i.e., the amount of fillet formed can be adjusted. However, the semiconductor chip position shift, that is, chip shift may occur in the process in which the semiconductor component adhesive spreads over the entire semiconductor chip bonding region.
In response to this problem, in the step (3) of spreading the adhesive for semiconductor components, the adhesive for semiconductor components is spread while partially forming fillets at two or more portions of the semiconductor chip bonding region. Thus, even in a semiconductor chip mounting body that is downsized by adjusting the amount of fillets, it is possible to suppress chip shift while enabling good wire bonding, and further improve the reliability of the obtained semiconductor chip mounting body. it can.
In addition, when the site | part which forms a fillet partially is one site | part of a semiconductor chip joining area | region, the said semiconductor chip will rotate on the said adhesive for semiconductor components, and chip shift is fully suppressed. There are things you can't do.

Since two or more parts of the semiconductor chip bonding region can suppress the chip shift more favorably, it is preferable that they are a corner, a side, a part of the side, and the like, which are symmetrical to each other, and a combination thereof.
In addition, when stacking semiconductor chips on a semiconductor chip in a staircase pattern, a fillet is partially formed in two or more portions below the portion where the first-stage semiconductor chip and the second-stage semiconductor chip are overhanging. By doing so, chip shift can be effectively suppressed.

In the step (3) of wetting and spreading the adhesive for a semiconductor component, in order to partially form a fillet at two or more portions of the semiconductor chip bonding region, for example, in the coating step (1), It is preferable to apply the adhesive for semiconductor components to the shape.

The said symmetrical shape is not specifically limited, For example, the shape shown to FIG.4, 6, 8, 10, 12, and 14 is mentioned. For example, when the semiconductor component adhesive is applied in the shape shown in FIG. 4 in the application step (1), immediately after the lamination step (2), the shape of the region where the semiconductor component adhesive has spread out. 5 has the shape shown in FIG. 5, and then, in the step (3) of wetting and spreading the adhesive for semiconductor components, the adhesive for semiconductor components is formed while partially forming fillets at two or more portions of the semiconductor chip bonding region. The agent can be wetted and spread. Similarly, for example, when the adhesive for a semiconductor component is applied in the shape shown in FIGS. 6, 8, 10, 12, and 14 in the application step (1), the semiconductor immediately after the lamination step (2). The shapes of the wet-spread regions of the component adhesives are the shapes shown in FIGS. 7, 9, 11, 13 and 15, respectively.

The size of the fillet is not particularly limited, but a preferable lower limit of the fillet distance (fillet distance) from the semiconductor chip bonding region is 50 μm, and a preferable upper limit is 300 μm. If the distance of the fillet from the semiconductor chip bonding region is less than 50 μm, the effect of forming the fillet may not be sufficiently obtained. If the distance of the fillet from the semiconductor chip bonding region exceeds 300 μm, the fillet may contaminate the wire bonding pad and cause wire bonding failure. A more preferable lower limit of the fillet distance from the semiconductor chip bonding region is 100 μm, and a more preferable lower limit is 150 μm.

In the method for manufacturing a semiconductor chip package according to the present invention, next, the step (4) of curing the semiconductor component adhesive (hereinafter also referred to as the curing step (4)) is performed.
By performing the said hardening process (4), the said adhesive for semiconductor components can be hardened and the semiconductor chip mounting body which joined the said semiconductor chip and the said board | substrate or another semiconductor chip can be obtained.
In the curing step (4), since the adhesive for semiconductor components has the above-described viscosity characteristics, for example, even when the substrate is warped, the adhesive for semiconductor components is suppressed while suppressing resin shrinkage. Curing can be performed.

The curing method in the curing step (4) is not particularly limited, and curing conditions suitable for the curing characteristics of the adhesive for semiconductor components can be appropriately selected and used, for example, at 120 ° C. for 30 minutes and at 170 ° C. Examples include a method of heating for 30 minutes.

When manufacturing a multilayer semiconductor chip mounting body using the method for manufacturing a semiconductor chip mounting body of the present invention, the steps from the step (3) of spreading the adhesive for semiconductor components to the curing step (4) are as follows: It may be performed each time one semiconductor chip is stacked, or may be performed at once after repeating a desired number of stacked semiconductor chips.
Moreover, when manufacturing a multilayer semiconductor chip mounting body using the manufacturing method of the semiconductor chip mounting body of this invention, the dispersion | variation in the distance between chips of the semiconductor chip mounting body obtained after the said hardening process (4) is 3 (sigma). It is preferably less than 5 μm. When the variation is 3 μm or more and 5 μm or more, a wire bonding defect or a flip chip bonding defect may occur in the obtained semiconductor chip mounting body. Note that σ represents a standard deviation.

In the method of manufacturing a semiconductor chip package according to the present invention, for the step (3) of spreading the adhesive for semiconductor components and the curing step (4), for example, these steps may be performed as a series of steps. Each process may be performed separately. In any case, the semiconductor component adhesive is wet spread over the entire semiconductor chip bonding region, or a fillet is partially formed in two or more portions of the semiconductor chip bonding region, and the semiconductor It is important that the component adhesive is cured in a state where it is wet and spread over the entire semiconductor chip bonding region.

In the manufacturing method of the semiconductor chip mounting body of the present invention, the semiconductor chip mounting body may be manufactured by bonding the semiconductor chip to the substrate. For example, another semiconductor chip such as a semiconductor chip bonded to the substrate In addition, a multilayer semiconductor chip package may be manufactured by bonding semiconductor chips. In addition, the method for manufacturing a semiconductor chip package according to the present invention can be particularly preferably used when semiconductor chips are stacked in a cross shape.

A semiconductor device can be manufactured by manufacturing a semiconductor chip mounting body using the method for manufacturing a semiconductor chip mounting body of the present invention, and further sealing the obtained semiconductor chip mounting body with a sealant or the like. . Such a semiconductor device is also one aspect of the present invention.

ADVANTAGE OF THE INVENTION According to this invention, the semiconductor chip mounting body which is excellent in the filling property of an adhesive agent, can suppress the biting of a void and resin shrinkage, and can adjust the protrusion of the adhesive agent from a semiconductor chip joining area | region. The manufacturing method of can be provided. In addition, according to the present invention, a semiconductor device using the method for manufacturing a semiconductor chip package can be provided.

FIG. 1 is a cross-sectional view schematically showing a state immediately after the stacking step (2) in the method for manufacturing a semiconductor chip package according to the present invention. FIG. 2 is a cross-sectional view schematically showing a state immediately after the step (3) of wetting and spreading the adhesive for semiconductor components in the method for manufacturing a semiconductor chip package according to the present invention. FIG. 3 is a cross-sectional view schematically showing a state where the adhesive for semiconductor components protrudes from the semiconductor chip bonding region. FIG. 4 is a top view schematically showing an example of a shape in which the adhesive for semiconductor components is applied to the semiconductor chip bonding region in the applying step (1) in the method for manufacturing a semiconductor chip package according to the present invention. FIG. 5 is a top view schematically showing an example of a shape of a region where the adhesive for a semiconductor component spreads in the semiconductor chip bonding region immediately after the stacking step (2) in the method for manufacturing a semiconductor chip package according to the present invention. It is. FIG. 6 is a top view schematically showing an example of a shape in which the adhesive for semiconductor components is applied to the semiconductor chip bonding region in the applying step (1) in the method for manufacturing a semiconductor chip package according to the present invention. FIG. 7 is a top view schematically showing an example of the shape of an area where the adhesive for semiconductor components is spread in the semiconductor chip bonding area immediately after the stacking step (2) in the method for manufacturing a semiconductor chip package according to the present invention. It is. FIG. 8 is a top view schematically showing an example of a shape in which the adhesive for semiconductor components is applied to the semiconductor chip bonding region in the application step (1) in the method for manufacturing a semiconductor chip package according to the present invention. FIG. 9 is a top view schematically showing an example of the shape of an area where the adhesive for a semiconductor component spreads in the semiconductor chip bonding area immediately after the stacking step (2) in the method for manufacturing a semiconductor chip package according to the present invention. It is. FIG. 10 is a top view schematically showing an example of a shape in which the adhesive for semiconductor components is applied to the semiconductor chip bonding region in the applying step (1) in the method for manufacturing a semiconductor chip package according to the present invention. FIG. 11 is a top view schematically showing an example of a shape of a region where the adhesive for a semiconductor component spreads in the semiconductor chip bonding region immediately after the stacking step (2) in the method for manufacturing a semiconductor chip package according to the present invention. It is. FIG. 12 is a top view schematically showing an example of a shape in which an adhesive for a semiconductor component is applied to a semiconductor chip bonding region in the applying step (1) in the method for manufacturing a semiconductor chip package according to the present invention. FIG. 13 is a top view schematically showing an example of the shape of a region where the adhesive for a semiconductor component spreads in the semiconductor chip bonding region immediately after the stacking step (2) in the method for manufacturing a semiconductor chip package according to the present invention. It is. FIG. 14 is a top view schematically showing an example of a shape in which the adhesive for semiconductor components is applied to the semiconductor chip bonding region in the applying step (1) in the method for manufacturing a semiconductor chip package according to the present invention. FIG. 15 is a top view schematically showing an example of the shape of an area where the adhesive for a semiconductor component is spread in the semiconductor chip bonding area immediately after the stacking step (2) in the method for manufacturing a semiconductor chip package according to the present invention. It is. FIG. 16 is a top view schematically showing an example of a shape in which an adhesive for a semiconductor component is applied to a semiconductor chip bonding region in the applying step (1) in the method for manufacturing a semiconductor chip package according to the present invention. FIG. 17 is a top view schematically showing an example of the shape of an area where the adhesive for semiconductor components spreads out in the semiconductor chip bonding area immediately after the stacking step (2) in the method for manufacturing a semiconductor chip package according to the present invention. It is.

Hereinafter, the present invention will be described in more detail with reference to examples. However, the present invention is not limited to these examples.
In addition, the particle size measuring machine (Coulter counter ZB / C-1000, the product made by Coulter Electronics) was used for the measurement of the particle diameter as described in the following Examples and Comparative Examples.

Example 1
(1) Manufacture of adhesive for semiconductor parts According to the composition of Example 1 in Table 1, materials other than the spacer particles shown below were stirred and mixed using a homodisper to prepare an adhesive composition. Spacer particles were blended into the obtained adhesive composition according to the composition shown in Table 1, and further stirred and mixed using a homodisper to produce an adhesive for semiconductor components.
Using an E-type viscosity measuring device (trade name “VISCOMETER TV-22”, manufactured by TOKI SANGYO CO. LTD, rotor used: φ15 mm, set temperature: 25 ° C.), the rotational speed of the obtained adhesive for semiconductor components is 0.5 rpm. And the viscosity at 10 rpm was measured.

1. Epoxy resin bisphenol F type epoxy resin (EXA-830-CRP, manufactured by DIC Corporation)
Resorcinol type epoxy resin (EX-201, manufactured by Nagase ChemteX Corporation)
Polyether type epoxy resin (Epo Gosei PT, manufactured by Yokkaichi Chemical Co., Ltd.)
2. Epoxy group-containing high molecular compound epoxy group-containing acrylic resin (Blenmer CP-30, manufactured by NOF Corporation)
3. Hardener acid anhydride (YH-306, manufactured by Japan Epoxy Resin Co., Ltd.)
4). Curing accelerator imidazole (2MZA, manufactured by Shikoku Chemicals)
5. Adhesion imparting agent imidazole silane coupling agent (SP-1000, manufactured by Nikko Materials)
6). Thixotropic agent fumed silica (MT-10, manufactured by Tokuyama Corporation)
7). Spacer particle resin particles (Micropearl SP-210, manufactured by Sekisui Chemical Co., Ltd., average particle size 10 μm, CV value = 4%)
8). Silica filler spherical silica (SE-4050-SPE, manufactured by Admatechs, average particle size 1 μm, maximum particle size 5 μm)

(2) Manufacture of semiconductor chip mounting body A 10 mL syringe (manufactured by Iwashita Engineering Co., Ltd.) is filled with the obtained adhesive for semiconductor components, and a precision nozzle (manufactured by Iwashita Engineering Co., Ltd., nozzle tip diameter 0.3 mm) is attached to the syringe tip. Using a dispenser device (SHOT MASTER300, manufactured by Musashi Engineering Co., Ltd.), an organic substrate (Daisho Electronics Co., Ltd.) having a discharge pressure of 0.4 MPa, a gap between the organic substrate and the needle of 200 μm, and a coating amount of 2.3 μL is shown in FIG. Manufactured and having a thickness of 110 μm).
At this time, the ratio of the application amount of the adhesive for semiconductor components to the theoretical application amount represented by the following formula (3) (application amount / theoretical application amount) is 1.2, and the adhesive for semiconductor components is applied. The applied area (application area) was 50% of the semiconductor chip bonding area.
Theoretical coating amount = (area of semiconductor chip bonding region) × (target adhesive layer thickness) (3)

A semiconductor chip (thickness: 100 μm, 8 mm × 12 mm square, mesh pattern, aluminum wiring (thickness: 0.7 μm), L / L S = 15/15, the thickness of the silicon nitride film on the surface is 1.0 μm) using a flip chip bonder (DB-100, manufactured by Kasuya Kogyo Co., Ltd.) at a pressure of 0.3 MPa for 0.5 seconds. Laminated on the substrate.
At this time, the wet spread area of the adhesive for semiconductor components (the wet spread area after the stacking step (2)) was 70% of the semiconductor chip bonding area, and the shape shown in FIG.

After that, the semiconductor component adhesive is wetted and spread over the entire semiconductor chip bonding area by leaving it at room temperature for 10 minutes at room temperature, and then heated at 150 ° C. for 60 minutes to cure the semiconductor component adhesive. By doing so, a semiconductor chip mounting body was obtained.

( Examples 2, 3, 5, Comparative Examples 1-7 and Reference Examples 1-2)
According to the composition shown in Table 1, an adhesive for semiconductor parts having the viscosity characteristics shown in Table 1 was prepared, and a semiconductor chip package was obtained in the same manner as in Example 1 except that the process conditions shown in Table 1 were changed. .

(Evaluation)
About the semiconductor chip mounting body obtained by the Example, the comparative example, and the reference example, it evaluated by the following method. The results are shown in Table 1.

(1) Between the resin-settled organic substrate and the semiconductor chip was observed using an ultrasonic exploration imaging device (mi-scope hyper II, manufactured by Hitachi Construction Machinery Finetech Co., Ltd.), and the resin-squeezed state was evaluated according to the following criteria. .
◎ No resin shrinkage was observed.
○ Resin shrinkage was slightly observed.
X A large resin shrinkage was observed.

(2) Extrusion of adhesive for semiconductor parts (fillet distance)
By measuring the maximum value of the protrusion distance (fillet distance) of the adhesive for a semiconductor component protruding from the semiconductor chip bonding region between the organic substrate and the semiconductor chip, the evaluation was performed according to the following criteria.
A The maximum value of the protruding distance was 1 to 100 μm.
(Circle) the maximum value of the protrusion distance was 101-200 micrometers.
(Triangle | delta) The maximum value of the protrusion distance was 201-300 micrometers.
X The maximum value of the protruding distance was 301 μm or more, or the entire semiconductor chip bonding region was not filled with the adhesive for semiconductor components, and the maximum value of the protruding distance was 0 μm.

(3) Filling of adhesive for semiconductor parts The area between the organic substrate and the semiconductor chip is observed using an ultrasonic exploration imaging device (mi-scope hyper II, manufactured by Hitachi Construction Machinery Finetech Co., Ltd.). The filling property of the adhesive for semiconductor components was evaluated according to the following criteria.
◎ 100% of the semiconductor chip bonding area was filled with an adhesive for semiconductor components.
○ 95% or more and less than 100% of the semiconductor chip bonding area was filled with the adhesive for semiconductor components.
X When viewed from the organic substrate, there were more than 5% of the semiconductor chip bonding region not filled with the adhesive for semiconductor components.

(4) Void entrainment Ultrasonic exploration imaging device (mi-scope hyper II, manufactured by Hitachi Construction Machinery Finetech Co., Ltd.) was used to observe the voids of the semiconductor chip mounting body and evaluated according to the following criteria.
◎ Little void was observed.
○ Slight voids were observed.
X Conspicuous peeling due to voids was observed.

(5) Temperature cycle test (TCT)
The semiconductor chip mounting body was placed in a temperature cycle oven that cycled from -55 ° C to 125 ° C once every 30 minutes. The area between the organic substrate and the semiconductor chip after 2000 cycles was observed using an ultrasonic exploration imaging apparatus (mi-scope hyper II, manufactured by Hitachi Construction Machinery Finetech Co., Ltd.) and evaluated according to the following criteria.
○ No peeling was observed.
X Peeling was observed.

(6) Yield The yield of the semiconductor chip mounting body was evaluated according to the following criteria.
○ As evaluation results of the above (1) to (5), there was no x.
X As an evaluation result of the above (1) to (5), there were one or more x.

In Reference Example 1, the viscosity at 0.5 rpm when the adhesive for semiconductor components was measured at 25 ° C. using an E-type viscometer was less than 20 Pa · s, but the thickness of the bonded semiconductor chip was 40 μm. Therefore, no large resin shrinkage of the adhesive for semiconductor components was observed. Moreover, in Reference Example 2, the viscosity at 0.5 rpm when the adhesive for semiconductor components was measured using an E-type viscometer at 25 ° C. exceeded 40 Pa · s. Since it was 500 μm, the filling property of the adhesive for semiconductor components was 95% or more of the semiconductor chip bonding region.

ADVANTAGE OF THE INVENTION According to this invention, the semiconductor chip mounting body which is excellent in the filling property of an adhesive agent, can suppress the biting of a void and resin shrinkage, and can adjust the protrusion of the adhesive agent from a semiconductor chip joining area | region. The manufacturing method of can be provided. In addition, according to the present invention, a semiconductor device using the method for manufacturing a semiconductor chip package can be provided.

DESCRIPTION OF SYMBOLS 1 Board | substrate or other semiconductor chip 2 Semiconductor chip 3 Adhesive for semiconductor components

Claims (2)

There is a manufacturing method of a semiconductor chip mounting body in which a semiconductor chip and a substrate or another semiconductor chip are joined,
A step (1) of applying an adhesive for a semiconductor component to 40 to 90% of a semiconductor chip bonding region on a substrate or another semiconductor chip;
By laminating semiconductor chips on the substrate or other semiconductor chips via the adhesive for semiconductor components, the semiconductor chip bonding region on the substrate or other semiconductor chips is reduced to 60% or more and less than 100%, A step (2) of spreading and spreading the adhesive for semiconductor components;
A step (3) of spreading the adhesive for a semiconductor component over the entire semiconductor chip bonding region on the substrate or another semiconductor chip at room temperature; and
And (4) curing the adhesive for semiconductor components,
The semiconductor chip and the substrate or another semiconductor chip have a thickness of 50 to 300 μm,
The adhesive for semiconductor components has a viscosity at 0.5 rpm of 25 to 40 Pa · s and a viscosity at 10 rpm of 10 to 30 Pa · s when measured using an E-type viscometer at 25 ° C. Manufacturing method of semiconductor chip mounting body. A semiconductor device manufactured using the method for manufacturing a semiconductor chip package according to claim 1.

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