JP2002252245A - Method for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which is capable of making a device main body smaller and has a structure that allows more efficient manufacture of the device. SOLUTION: In the method for manufacturing the semiconductor device, a pair of wiring bodies having electrodes corresponding to each other respectively and at least one of the wiring bodies consists of semiconductor chips, are joined through a bonding resin layer as being electrically connected between the electrodes and the joint parts of both wiring bodies are resin-sealed. Positioning marks having impermeability to infrared rays are formed on predetermined positions other than those of the electrodes of the semiconductor chips, bumps are formed on the electrodes of the semiconductor chip, a bonding resin layer is formed in a region including at least positioning marks and bumps of the semiconductor chips, the positioning marks of the semiconductor chips are detected through the bonding resin layer with a infrared camera, both of the wiring bodies are registered, the wiring bodies are electrically connected between these electrodes, and the joint parts of the both are resin-sealed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for manufacturing a semiconductor device.

[0002]

2. Description of the Related Art In recent years, a semiconductor chip is mounted on another wiring base (for example, a printed wiring board or another semiconductor chip) in order to cope with miniaturization and weight reduction of a semiconductor device, increase of pins, and increase of transmission speed. Flip-chip mounting structures for direct mounting face down have been developed. As a semiconductor device having this structure, a device in which a pair of wiring bases each having an electrode corresponding to each other are joined via an adhesive resin layer is known. The base is joined while making electrical connection between the electrodes, and the joint between the two is sealed with resin.

In general, in such a method of manufacturing a semiconductor device, an adhesive resin layer is formed on a wiring base on which a semiconductor chip is mounted, and then the semiconductor chip is pressed against the wiring base to join the two. Done. FIGS. 4A and 4B are diagrams schematically showing an active surface of a semiconductor chip and a passive surface of a printed wiring board which constitute the semiconductor device, respectively, and FIG. 4A to 4C are explanatory diagrams showing a manufacturing method in the order of steps.

On the active surface of the semiconductor chip 50, positioning marks 51 are provided near a pair of diagonals, and bumps 52 are formed on electrode pads 54 arranged in a circumference. On the other hand, on the passive surface of the printed wiring board 60,
An electrode land 62 corresponding to the bump 52 on the semiconductor chip 50 side is provided, and an adhesive resin layer 63 covering a region including the electrode land 62 and an inner side thereof is formed. And
Outside the adhesive resin layer 63, a positioning mark 61 is provided near a pair of diagonals.

[0005] Printed wiring board 60 held in place
On the other hand, in the step of mounting the semiconductor chip 50 face down, first, based on the positioning marks 51 and 61 of the semiconductor chip 50 and the printed wiring board 60, the bump 52 on the semiconductor chip 50 side and the electrode on the printed wiring board 60 side are used. Both are aligned so that the pads 62 correspond to each other (see FIG. 4A). And the semiconductor chip 5
0 is thermocompression-bonded to the printed wiring board 60, and the bumps 52 and the electrode pads 62 are joined together while making an electrical connection therebetween, and at the same time, the joints are sealed with resin (FIG. 4 (b) )reference). In this mounting step, generally, the recognition of the positioning marks on the semiconductor chip 50 and the printed wiring board 60 is performed by detecting with a camera (not shown) having sensitivity in a normal visible region.

[0006]

By the way, in a camera having sensitivity in a normal visible region, an adhesive resin layer 6 is provided thereon.
3 cannot be detected, and as described above, in the printed wiring board 60,
It is necessary to provide the positioning mark 61 outside the adhesive resin layer 63. Along with this, the area required for mounting the semiconductor chip 50 on the printed wiring board 60 increases, which hinders downsizing of the device body. Further, when the adhesive resin layer 63 is formed on the printed wiring board 60, it is necessary to form the adhesive resin layer 63 at an accurate position and size so as not to be positioned on the positioning mark 61. Further, in this case, since it is necessary to form the adhesive resin layer 63 for each semiconductor chip 50, the operation is troublesome.

The present invention has been made in view of the above technical problems, and provides a method of manufacturing a semiconductor device having a structure capable of realizing a reduction in the size of the device body and more efficiently manufacturing. The purpose is to:

[0008]

According to a first aspect of the present invention, a pair of wiring bases each including a corresponding one of the semiconductor chips and having at least one of the semiconductor chips is electrically connected between the electrodes via an adhesive resin layer. In a method of manufacturing a semiconductor device in which a connection is made while forming a connection, and at the same time, a bonding portion of the both is resin-sealed, a mark for forming a positioning mark having infrared impermeability at a predetermined portion other than on the electrode of the semiconductor chip A forming step, a bump forming step of forming a bump on an electrode of the semiconductor chip, an adhesive resin layer forming step of forming an adhesive resin layer in a region including at least the positioning mark and the bump of the semiconductor chip, Positioning step of detecting the positioning mark from above the adhesive resin layer with an infrared camera and positioning both wiring substrates , Together are joined while no electrical connection between the two wires base electrode, in which the joint portion therebetween and characterized by having a bonding step of a resin sealing.

According to a second aspect of the present invention, in the first aspect, in the step of forming the positioning mark, the bump and the adhesive resin layer, the positioning mark, the bump and the adhesive resin layer are formed on a plurality of semiconductor wafers. After the semiconductor wafer is continuously formed over a region to be a semiconductor chip, the semiconductor wafer is divided for each semiconductor chip.

Further, according to a third aspect of the present invention, in the first or second aspect, solder is used as a material of the bump formed on the semiconductor chip, and in the joining step, the soldering is performed at a temperature lower than the melting point of the bump. By melting the adhesive resin layer and subsequently melting the adhesive resin layer and the bump at a temperature equal to or higher than the melting point of the bump while maintaining the semiconductor chip and the other wiring substrate at predetermined positions and intervals, After electrically connecting the chip and the wiring base, the adhesive resin layer is cured at a temperature lower than the melting point of the bump.

Further, according to a fourth invention of the present application, in the first or second invention, in the bonding step, the superposition is performed in a state where the bumps on the semiconductor chip and the electrodes of the other wiring base are in contact with each other. It is characterized in that the two are joined by a solid-phase diffusion reaction by applying sonic vibration.

Further, according to a fifth invention of the present application, in the fourth invention, the bump on the semiconductor chip side is made of gold, and the electrode on the other wiring base is made of one of gold and aluminum. It is characterized by.

Further, the sixth invention of the present application provides
In any one of the fifth inventions, the adhesive resin layer forming step is characterized in that a material that is liquid at room temperature is used as the material of the adhesive resin layer.

Further, the seventh invention of the present application provides
In any one of the fifth inventions, the adhesive resin layer forming step is characterized in that a film-like material at room temperature is used as a material of the adhesive resin layer.

[0015] Further, the eighth invention of the present application is the first invention.
In any one of the seventh inventions, the adhesive resin layer contains an epoxy resin as a main component.

Further, the ninth invention of the present application is directed to the first to fourth aspects.
7. The method according to claim 7, wherein the adhesive resin layer contains a silica filler.

[0017]

Embodiments of the present invention will be described below with reference to the accompanying drawings. FIGS. 1A and 1B show an active surface of a semiconductor chip and a passive surface of a printed wiring board which constitute a semiconductor device according to an embodiment of the present invention. On the active surface of the semiconductor chip 1, a pair of positioning marks 2 are provided near the diagonal, and bumps 3 are formed on electrode pads (not shown) arranged circumferentially. In this embodiment, the positioning mark 2 is made of a material having infrared opacity. Then, the adhesive resin layer 4 is formed on the entire area on the active surface of the semiconductor chip 1. On the other hand, on the passive surface of the printed wiring board 11, a pair of positioning marks 12 are provided near the diagonal, and electrode lands 13 corresponding to the bumps 3 on the semiconductor chip 1 side are provided.

FIG. 2 schematically shows a joining device for joining the semiconductor chip 1 and the printed wiring board 11 to each other. The bonding apparatus 10 is used to face-down a semiconductor chip 1 having bumps 3 formed on its active surface.
The flip-chip mounting is performed directly on the semiconductor chip 1. The head 6 basically has a head 6 for sucking, holding and transporting the semiconductor chip 1, and a head driving unit 7 for driving the head 6 in the horizontal and vertical directions. A stage 16 for holding and transporting the printed wiring board 11, a stage driving unit 17 for driving the stage 16 in the lateral direction, and an infrared region for detecting the positioning mark 2 of the semiconductor chip 1 sucked and held by the head 6 are observed. A possible camera (hereinafter referred to as an infrared camera) 8, a first arithmetic unit 9 for calculating a signal detected from the infrared camera 8, and a positioning mark 12 of a printed wiring board 11 held on a stage 16 are detected. A camera 18 (hereinafter, referred to as a visible region camera) capable of observing a normal visible region and a second which calculates a signal detected from the visible region camera 18 A calculation unit 19, based on signals from the first and second arithmetic unit 9, 19, and a control unit 20 for controlling the operation of the head drive unit 7 and a stage driving unit 17.

In the bonding apparatus 10 having such a configuration, the infrared camera 8 is connected to the semiconductor chip 1 held by the head 6.
The positioning mark 2 can be observed from above the adhesive resin layer 4. The infrared camera 8 is arranged so that its optical axis is perpendicular to the semiconductor chip 1 sucked and held by the head 6. Infrared camera 8 to semiconductor chip 1
The emitted infrared light is reflected only by the positioning mark 2 having infrared opacity, and an image representing the positioning mark 2 is obtained. An image signal representing the positioning mark 2 detected by the infrared camera 8 is transmitted to the first arithmetic unit 9.

Similarly, the visible area camera 18
Can observe the positioning mark 12 of the printed wiring board 11 held on the stage 16. The visible region camera 18 is arranged so that its optical axis is perpendicular to the semiconductor chip 1 sucked and held on the stage 16. An image signal representing the positioning mark 12 detected by the visible region camera 18 is transmitted to the second calculation unit 19.

The first calculation section 9 calculates the position of the positioning mark 2 of the semiconductor chip 1 based on the image signal transmitted from the infrared camera 8. On the other hand, the second arithmetic unit 1
In 9, the position of the positioning mark 12 on the printed wiring board 11 is calculated based on the image signal transmitted from the visible area camera 18. These first and second operation units 9 and 19
Are transmitted to the control unit 20 together. The control unit 20 operates the head driving unit 6 and the stage driving unit 16 based on the transmitted calculation result,
The semiconductor chip 1 sucked and held on the stage and the printed wiring board 1 held on the stage 16 are moved to accurate positions. Then, the semiconductor chip 1 and the printed wiring board 11 are joined with a predetermined pressure and temperature profile while making electrical connection between the electrodes, and the joint between them is sealed with a resin.

3A to 3G are explanatory views showing a method of manufacturing a semiconductor device according to the embodiment of the present invention in the order of steps. First, a positioning mark (not shown) and an electrode pad 5 are formed on a semiconductor wafer 30 having a region including a plurality of semiconductor chips 1 (see FIG. 3A). In this embodiment, aluminum is used as the material of the positioning marks 2 and the electrode pads 5 formed on the semiconductor chip 1.
With photolithography technology and etching technology,
It is formed in a predetermined position and shape. Any material can be used as the material of the positioning mark 2 as long as it does not transmit infrared rays. However, the same material as the electrode pad 5 can form the positioning mark 2 and the electrode pad 5 at the same time due to the manufacturing process. Because it is, it is desirable.

Next, the bumps 3 are formed on the electrode pads 5 of the semiconductor wafer 30 (see FIG. 3B). In this embodiment, solder is used as the material of the bumps 3, and the bumps 3 are formed by plating solder. In addition, as the material of the bump 3, any of conductive materials can be applied, and for example, a low-temperature molten metal such as gold, copper, and solder is preferable from the viewpoint of connection reliability. Further, the method for forming the bump is not limited to the plating method, and any method such as a vapor deposition method, a wire bonding method, a printing method, and a ball mounting method can be applied. Further, a method of forming a bump 3 by jetting molten solder using the principle of an ink jet printer method is also applicable.

Subsequently, an adhesive resin layer 4 is formed on the entire surface of one surface (the upper surface in the figure) of the semiconductor wafer 30 on which the bumps 3 are formed (see FIG. 3C). In this embodiment,
The adhesive resin layer 4 on the semiconductor wafer is formed by forming an adhesive resin that is liquid at room temperature on the semiconductor wafer by a printing method. By using an adhesive resin that is liquid at room temperature,
The adhesive resin layer 4 can be formed around the bump 3 without voids. The method for applying the liquid adhesive resin is not limited to the printing method, and any method such as a dispensing method and a stamping method can be applied.

As the material of the adhesive resin layer 4, any material can be used as long as the semiconductor chip 1 and the printed wiring board 11 can be joined. Materials containing resins are preferred.
The epoxy resin is not particularly limited. For example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol AD type epoxy resin, diallyl bisphenol A type epoxy resin, diallyl bisphenol F type epoxy resin, diallyl Bisphenol AD epoxy resin, tetramethylbiphenol epoxy resin, biphenol epoxy resin, cyclopentadiene epoxy resin, terpene phenol epoxy resin, tetrabromobisphenol A epoxy resin, phenol novolak epoxy resin, cresol novolak epoxy resin, Triphenylmethane type epoxy resin, cycloaliphatic epoxy resin, glycidyl ester epoxy resin, heterocyclic epoxy resin, etc. , It is possible to use them singly or in combination. Further, as a material of the adhesive resin layer 4, in addition to a material containing an epoxy resin, a material in which a resin component other than the epoxy resin such as a curing agent of the epoxy resin, a thermoplastic resin, and rubber is mixed can be applied.

Further, the material of the adhesive resin layer 4 preferably contains a filler in order to reduce the coefficient of thermal expansion and provide low water absorption. The filler is not particularly limited as long as it does not impair the curing of the adhesive resin. For example, silica (silicon dioxide) such as fused silica and crystalline silica,
Alumina (aluminum oxide), silicon nitride, calcium carbonate, zinc oxide and the like are applicable. Among them, fused silica is preferred from the viewpoint of reducing the coefficient of thermal expansion of the obtained adhesive resin and improving the mechanical strength. Furthermore,
From the viewpoint of providing fluidity, spherical fused silica is preferred.

In this embodiment, the formation of the electrode pads 5, the positioning marks 2, the bumps 3, and the adhesive resin layer 4 on the semiconductor chip 1 is continuously performed on the semiconductor wafer 30 over a region to be a plurality of semiconductor chips 1. Therefore, an efficient production operation can be realized. It should be noted that the process is performed in a wafer state including a plurality of semiconductor chips 1, but is not limited to this. After cutting for each semiconductor chip, electrode pads 5, positioning marks 2, bumps 3, and adhesive resin layer 4 are formed. Is also good.

Subsequently, the semiconductor wafer 30 on which the bumps 3 and the adhesive resin layer 4 are formed is diced for each semiconductor chip 1 (see FIG. 3D). Thereby, a plurality of semiconductor chips 1 are obtained.

Subsequently, the positioning mark 2 (see FIG. 1) of the semiconductor chip 1 on which the bump 3 and the adhesive resin layer 4 are formed is detected by the infrared camera 8, and the positioning mark 12 of the printed wiring board 11 (see FIG. 1). ) Is detected by the ordinary camera 18 and the mutual positioning is performed so that the bumps 3 correspond to the electrode pads 13 (see FIG. 3E).

Next, the head 6 is driven, and the semiconductor chip 1 sucked and held there is pressed against the printed wiring board 11 held on the stage 16. At this time,
The bump 3 of the semiconductor chip 1 comes into contact with the electrode land 13 of the printed wiring board 11 (see FIG. 3F). Furthermore,
In this state, the temperature of the head 6 is raised with a predetermined pressure and temperature profile to heat the semiconductor chip 1, the bumps 3 and the adhesive resin layer 4. In this embodiment, the bump 3
The adhesive resin layer 4 is melted at a temperature lower than the melting point of the bumps 3 by using solder as the material of the semiconductor chip 1. The semiconductor chip 1 and the printed wiring board 11 are electrically connected to each other by melting the adhesive resin layer 4 and the bumps 3 at a temperature equal to or higher than the melting point of the bumps 3 while maintaining the gaps. The adhesive resin layer 4 is cured at a temperature lower than the melting point. Thereby, highly reliable bonding can be performed. In addition, as a joining process of the semiconductor chip 1 and the printed wiring board 11, as long as they are electrically connected and joined via an adhesive resin layer, and the joining portion is resin-sealed, Any process is applicable.

Thereafter, the semiconductor device is placed in an oven 32, and the adhesive resin layer 4 is cured (see FIG. 3 (g)).
As a result, the semiconductor chip 1 and the printed wiring board 11 are joined together while making electrical connection between the two electrodes, and at the same time, the joined portions are sealed with resin.

The present invention is not limited to the illustrated embodiment, and it goes without saying that various improvements and design changes can be made without departing from the spirit of the present invention. For example, the adhesive resin is not limited to a liquid but may be a film. When a film-like adhesive resin is used, a resin layer can be formed by pressing the film-like adhesive resin onto the semiconductor wafer 30 or the semiconductor chip 1 using a laminator, a hot press, or the like.

As a material of the bump 3, gold may be used. In this case, when the semiconductor chip 1 and the printed wiring board 11 are joined, ultrasonic vibration is applied between the bumps 3 on the semiconductor chip 1 side and the electrode lands 13 on the printed wiring board 11 to perform solid phase diffusion. A joint is formed. In the case where a bonding portion is formed by solid-phase diffusion by applying ultrasonic vibration to the bump 3, it is preferable that the electrode land 13 of the printed wiring board 11 be made of gold or aluminum in terms of ease.

[0034]

As is apparent from the above description, according to the first aspect of the present invention, a pair of wiring bases each having electrodes corresponding to each other, at least one of which is made of a semiconductor chip, is provided with an adhesive resin layer. In the method of manufacturing a semiconductor device in which the electrodes are joined together while making electrical connection between the electrodes, and at the same time, the joint portion between the electrodes is sealed with a resin, a predetermined portion other than on the electrodes of the semiconductor chip is impermeable to infrared light. Forming a positioning mark having: a bump on the electrode of the semiconductor chip; forming an adhesive resin layer on at least a region of the semiconductor chip including the positioning mark and the bump; Infrared camera detects from above, aligns both wiring substrates, joins both wiring substrates while making electrical connection between electrodes, Since the bonding portion is sealed with a resin, it is possible to form an adhesive resin layer from above the positioning mark on the semiconductor chip side, and it is possible to reduce an area required for mounting the chip on the other wiring base side. ,as a result,
The size of the apparatus main body can be reduced.

According to the invention of claim 2 of the present application, in the step of forming the positioning mark, the bump and the adhesive resin layer, the positioning mark, the bump and the adhesive resin layer are combined with a plurality of semiconductor chips on a semiconductor wafer. After the semiconductor wafer is formed continuously over a certain area, the semiconductor wafer is divided into individual semiconductor chips, so that manufacturing can be performed more efficiently.

Further, according to the invention of claim 3 of the present application, solder is used as a material of the bump formed on the semiconductor chip, and in the bonding step, the adhesive resin layer is formed at a temperature lower than the melting point of the bump. Melting, followed by
With the semiconductor chip and the other wiring substrate held at predetermined positions and intervals, the semiconductor chip and the wiring substrate are electrically connected by melting the adhesive resin layer and the bump at a temperature equal to or higher than the melting point of the bump. In addition, since the adhesive resin layer is cured at a temperature lower than the melting point of the bump, bonding can be performed without the adhesive resin layer being bitten between the electrodes, and highly reliable electrical connection can be realized.

Further, according to the invention of claim 4 of the present application, in the joining step, the bump on the semiconductor chip side and the electrode on the other wiring base are in contact with each other,
Since both are joined by solid-phase diffusion reaction by applying ultrasonic vibration, highly reliable electrical connection can be realized.

Further, according to the invention of claim 5 of the present application, the bump on the semiconductor chip side is made of gold, and the electrode on the other wiring substrate side is made of one of gold and aluminum. In addition, bonding can be performed efficiently, and highly reliable electrical connection can be realized.

Further, according to the invention of claim 6 of the present application, in the step of forming the adhesive resin layer, a material that is liquid at room temperature is used as the material of the adhesive resin layer.
The adhesive resin layer can be formed following the irregularities on the surface of the wiring substrate, and highly reliable bonding can be realized.

Further, according to the invention of claim 7 of the present application, in the step of forming the adhesive resin layer, the material of the adhesive resin layer which is a film at room temperature is used, so that the handling is easy. Productivity can be improved.

Further, according to the invention of claim 8 of the present application, since the adhesive resin layer contains an epoxy resin as a main component, an adhesive resin layer having good adhesiveness and moisture resistance is formed. be able to.

Further, according to the ninth aspect of the present invention, since the adhesive resin layer contains a silica filler, the thermal expansion coefficient of the adhesive resin layer is reduced, and the adhesive resin layer and the other of the adhesive resin layer and the other resin are used. The interface stress with the wiring substrate can be reduced, and highly reliable bonding can be realized.

[Brief description of the drawings]

FIG. 1A is a diagram schematically showing a semiconductor chip constituting a semiconductor device according to an embodiment of the present invention. (B) It is a figure which shows schematically the printed wiring board which comprises the semiconductor device which concerns on embodiment of this invention.

FIG. 2 is a view showing a joining device for joining the semiconductor chip and a printed wiring board.

FIG. 3 is a diagram schematically illustrating a manufacturing flow of the semiconductor device.

FIG. 4A is a diagram illustrating a semiconductor chip constituting a conventional semiconductor device. (B) is a diagram showing a printed wiring board that constitutes a conventional semiconductor device.

FIG. 5 is a diagram showing a simplified flow of manufacturing a conventional semiconductor device.

[Explanation of symbols]

1 semiconductor chip, 2 positioning mark of semiconductor chip, 3 bump, 4 adhesive resin layer, 5 electrode pad, 6
Head, 8 infrared camera, 10 joining device, 11 printed wiring board, 12 positioning mark of printed wiring board, 13 electrode land, 16 stage, 18 visible area camera, 30 semiconductor wafer

Continued on the front page (72) Inventor Hirofumi Fujioka 2-3-2 Marunouchi, Chiyoda-ku, Tokyo F-term (reference) 5F044 LL05 LL11 QQ01 QQ09 RR12

Claims (9)

[Claims] At the same time, a pair of wiring bases, each of which is provided with an electrode corresponding to each other and at least one of which is formed of a semiconductor chip, is joined via an adhesive resin layer while making electrical connection between the electrodes, and at the same time, joining of the two. In a method of manufacturing a semiconductor device for sealing a portion with a resin, a mark forming step of forming a positioning mark having infrared opacity at a predetermined portion other than on the electrode of the semiconductor chip; and a bump on the electrode of the semiconductor chip. Forming an adhesive resin layer on at least a region including the positioning mark and the bump of the semiconductor chip; and positioning the positioning mark of the semiconductor chip on the adhesive resin layer with an infrared camera. An alignment step of detecting and aligning both wiring bases; and electrically connecting both wiring bases between the electrodes. The method of manufacturing a semiconductor device according to claim causes bonding while none and that the joint portion therebetween and a bonding step of a resin sealing. 2. The step of forming the positioning mark, the bump and the adhesive resin layer,
2. The semiconductor device according to claim 1, wherein after the bump and the adhesive resin layer are continuously formed over a region to be a plurality of semiconductor chips on the semiconductor wafer, the semiconductor wafer is divided for each semiconductor chip. Manufacturing method. 3. The method according to claim 1, wherein solder is used as a material of a bump formed on the semiconductor chip, and in the bonding step, the adhesive resin layer is melted at a temperature lower than a melting point of the bump. While maintaining the wiring base at a predetermined position and at a predetermined interval, the semiconductor chip and the wiring base are electrically connected by melting the adhesive resin layer and the bump at a temperature equal to or higher than the melting point of the bump. 3. The method of manufacturing a semiconductor device according to claim 1, wherein the adhesive resin layer is cured at a temperature lower than the melting point. 4. The method according to claim 1, wherein in the bonding step, in a state where the bumps on the semiconductor chip side and the electrodes of the other wiring substrate are in contact with each other, ultrasonic vibration is applied to bond the two by solid phase diffusion reaction. The method for manufacturing a semiconductor device according to claim 1. 5. The method according to claim 4, wherein the bump on the semiconductor chip side is made of gold, and the electrode on the other wiring base is made of one of gold and aluminum. 6. The method for manufacturing a semiconductor device according to claim 1, wherein in the step of forming the adhesive resin layer, a material that is liquid at room temperature is used as the material of the adhesive resin layer. . 7. The method of manufacturing a semiconductor device according to claim 1, wherein in the step of forming the adhesive resin layer, a material that is in the form of a film at room temperature is used as the material of the adhesive resin layer. Method. 8. The method of manufacturing a semiconductor device according to claim 1, wherein said adhesive resin layer contains an epoxy resin as a main component. 9. The method for manufacturing a semiconductor device according to claim 1, wherein the adhesive resin layer contains a silica filler.