JP2013045964A - Immersion processing method of substrate to be processed and immersion processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reliably prevent contact of adjacent substrates and floating of a substrate in both times when the substrate descends into a processing tank and lifts (pulled up) from the processing tank.SOLUTION: In the immersion processing method of a substrate to be processed, in which a processing is executed by immersing a carrier which houses the substrate to be processed in a processing tank filled with a processing liquid, a descending process, in which the carrier is held horizontally against a surface of the processing liquid and is descended into the processing tank, and a lifting process in which the carrier is tilted and lifted from the processing tank are conducted.

Description

  The present invention relates to an immersion processing method and an immersion processing apparatus for a substrate to be processed in which the substrate to be processed is immersed in a processing tank filled with a processing solution such as a chemical solution or pure water.

  2. Description of the Related Art Conventionally, a substrate to be processed such as a semiconductor substrate undergoes processes such as chemical treatment, cleaning treatment, and drying treatment in the manufacturing process. In this case, a plurality of plate-like semiconductor substrates (hereinafter also simply referred to as substrates) are collectively stored in a carrier, and are transferred between the respective processes by the automatic transfer system in units of the carrier. That is, in the chemical solution treatment step, the carrier is immersed in the chemical solution from above the chemical solution tank, and in the cleaning treatment step, the carrier is immersed in the cleaning solution from above the cleaning vessel.

  When a substrate is immersed in a treatment tank (chemical solution tank, cleaning tank, etc.), conventionally, the substrate is lowered and immersed vertically with respect to the liquid surface, and after treatment, the substrate is also raised vertically and pulled up from the liquid surface. It was like that.

  FIGS. 19A to 19D show a state where the substrate is pulled up perpendicularly to the liquid surface, and FIGS. 19A to 19C show the state of the longitudinal section, and FIG. 19D. Is shown in a cross-sectional state.

  When the substrate is pulled up perpendicularly to the liquid level, as shown in FIG. 19A, when the upper end 101a of the substrate 101 is pulled up from the liquid level 102a, as shown in FIG. The processing liquid 102 present between the adjacent substrates 101 flows downward between the substrates 101 and is attracted in the direction in which the adjacent substrates 101 approach each other due to the surface tension of the processing liquid, as shown in FIG. As described above, a phenomenon occurs in which the substrates 101 come into contact with each other in a tilted direction or stick as shown in FIG. In particular, since the recent semiconductor substrate 101 for a crystalline solar cell is thinned and easily bent in order to reduce the amount of silicon material used, contact or sticking occurs with the central portion P of the substrate where liquid is difficult to escape as a base point. It is easy to occur. When the substrates 101 contact (or stick) with each other in this way, there is a problem that the processing liquid 102 remains between them and causes a defect. That is, when the processing liquid 102 is a chemical liquid, the process proceeds with the chemical liquid only in that portion, and uneven processing (that is, etching abnormality or stain due to the residual liquid) occurs between other portions. In the case where the treatment liquid is water, a stain defect generally called a watermark occurs when the water remains to cause poor drying.

  Accordingly, a technique has been proposed that can solve the above problems (contact and sticking of the substrate) by pulling the substrate up from the processing tank while tilting the substrate at a predetermined angle with respect to the liquid surface. (For example, refer to Patent Document 1).

  In Patent Document 1, when a substrate (object to be processed) is processed in a processing tank, a device forming surface of the substrate is inclined upward by a predetermined angle, and the device forming surface is brought into contact with a carrier (storage jig). There is disclosed an automatic cleaning apparatus that performs cleaning and drying without any problem, and transports between processing tanks in a state where a device forming surface of a substrate is inclined upward by a predetermined angle.

  The thing of patent document 1 aims at preventing a contact with a device formation surface and a carrier by inclining a board | substrate, and it is not paying attention to the said problem, but it is between board | substrates by inclining a board | substrate. It is considered that the above problem can be solved because the distance is kept constant.

  In addition, it is disclosed also in patent document 2 regarding inclining a board | substrate. In the wet processing apparatus described in Patent Document 2, guide grooves for holding a substrate are originally formed obliquely, and the purpose is to reduce the height of the carrier holding the substrate.

JP-A-5-160101 JP 2001-257256 A

  However, in the automatic cleaning apparatus of Patent Document 1 and the wet processing apparatus of Patent Document 2, since the carrier is always transported while being inclined, the substrate is inclined even when the substrate is lowered and immersed in the processing liquid. Will be. And even when the substrate is lowered and immersed in the processing liquid in this way, if the substrate is tilted, the phenomenon that the substrate rises due to the resistance of the processing liquid occurs, and the substrates collide with each other and enter the carrier. There arises a problem that the substrate is damaged by dropping. Since recent semiconductor substrates tend to be thin and the weight of one substrate tends to be light, the above problem tends to become particularly apparent.

  The present invention was devised to solve such problems, and its purpose is both when the substrate to be processed is lowered into the processing tank and when the substrate to be processed is lifted (lifted) from within the processing tank. It is an object of the present invention to provide an immersion treatment method and an immersion treatment apparatus for a substrate to be processed that can surely prevent the substrate to be processed from being lifted and contact between the substrates to be processed.

  In order to solve the above-described problems, a substrate immersion method according to the present invention is accommodated in a state where a plurality of substrate insertion groove portions provided on an inner wall surface of a carrier are inserted with a peripheral edge portion in each of the plurality of substrate insertion groove portions. An immersion processing method for a substrate to be processed by immersing the substrate to be processed in a processing tank filled with a processing liquid together with the carrier, wherein the carrier is held horizontally with respect to the surface of the processing liquid. And a descending step of lowering the carrier into the treatment tank and an ascending step of tilting and raising the carrier from the inside of the treatment tank.

  According to the present invention, in the descent process, the carrier storing the substrate to be processed is held horizontally with respect to the surface of the processing liquid, so that the resistance of the processing liquid to the processing substrate stored in the carrier is minimized. This can prevent the substrate to be lifted in the carrier and damage caused by falling after the lift (that is, damage caused by falling of the substrate to be processed and hitting the carrier that has been lowered). Can do. Further, in the ascending process, the carrier containing the substrate to be processed is tilted and raised, so that the substrate to be processed in the carrier can be prevented from being lifted or damaged due to the lifting. In addition, since the distance between the substrates to be processed is kept constant by inclining the substrates to be processed, when the upper end portion of the substrate to be processed is pulled upward from the liquid surface, it is between the adjacent substrates to be processed. The intervening processing liquid flows downward between the substrates to be processed, and the substrate tensions are attracted in a direction approaching each other due to the surface tension of the processing liquid, and in contact with each other (or stick). The phenomenon can be avoided.

  According to the invention, in the ascending step, the substrate is inclined in a direction perpendicular to the processing surface of the substrate to be processed.

  According to such a configuration, in the ascending process, the carrier is tilted in a direction perpendicular to the processing surface and is raised from the inside of the processing tank, so that the substrate to be processed is lifted in the carrier or damaged due to the lifting. Etc. can be prevented.

  Moreover, according to this invention, the inclination angle of the said to-be-processed substrate in the said raising process is set to the arbitrary angles within the range of 4 degrees or more and 45 degrees or less with respect to the raising direction.

  By setting the tilt angle when rising to 4 ° or more and 45 ° or less, it is possible to reliably prevent the substrate to be processed from being lifted, and to prevent damage to the substrate to be processed due to resistance of the processing liquid. That is, when the angle is 4 ° or less, there is a high possibility that the substrate is lifted. When the angle is 45 ° or more, the resistance of the processing liquid increases when the substrate to be processed is pulled up, and the possibility that the thin substrate is damaged increases.

  In addition, it is more preferable that the inclination angle of the carrier in the ascending step is set to be 10 ° or less with respect to the ascending direction.

  By setting the tilt angle at the time of rising to 10 ° or less, it is possible to reliably prevent the substrate to be processed from being lifted and to prevent the substrate to be processed from being damaged due to the resistance of the processing liquid. In other words, even if it is 10 ° or more, there is no fear of damage to the substrate to be processed when the rising speed is slow. However, if the rising speed is high, the resistance of the processing liquid may increase correspondingly and the target substrate may be damaged. Get higher. That is, by setting the angle to 10 ° or less, the allowable range of the ascending speed is widened, so that the room for selecting the ascending speed can be widened in the manufacturing process.

  In addition, according to the present invention, a plurality of substrates to be processed are stored in a state where the peripheral portion is inserted into each of the plurality of substrate insertion groove portions provided on the inner wall surface of the carrier, and in this stored state, the carrier is stored. Each is immersed in the treatment liquid. As a result, since the substrate to be processed is tilted in the direction orthogonal to the processing surface and raised from the inside of the processing tank at the time of ascent, all the substrates to be processed are tilted in the same direction in the carrier. As a result, in addition to preventing the substrate to be processed from being lifted, the adjacent substrates to be processed that have been raised in the vertical direction without being tilted are tilted so that the adjacent substrates to be processed approach each other. The problem of touching can also be solved.

  In this case, in the descending step, the carrier is held horizontally, and in the ascending step, the substrate to be processed is tilted by tilting the carrier, so that the substrate to be processed in the carrier is tilted. The substrate to be processed can be inclined in the same direction at a time.

  According to the invention, the substrate to be processed is a semiconductor substrate, and the processing liquid is a chemical liquid or pure water. Thereby, the immersion treatment method of the present invention can be suitably used in an etching process, which is a manufacturing process of a semiconductor substrate, a next cleaning process, and the like.

  Further, the immersion processing apparatus for a substrate to be processed according to the present invention includes a plurality of substrates to be processed that are stored in a state where a peripheral portion is inserted into each of a plurality of substrate insertion groove portions provided on the inner wall surface of the carrier. An immersion processing apparatus for a substrate to be processed, which is processed by being immersed in a processing tank filled with a processing solution together with the carrier, and changes a holding unit for holding and transferring the carrier and a holding angle of the carrier An angle changing unit and an elevating unit that holds and raises the carrier, and when the carrier is lowered into the processing tank by the elevating unit, the carrier is held horizontally, and the carrier is processed by the elevating unit. When raising from the inside of the tank, the carrier is inclined and held by the angle changing section.

  According to the present invention, in the descending step, the carrier storing the substrate to be processed is held horizontally with respect to the surface of the processing liquid, so that the resistance of the processing liquid to the processing substrate stored in the carrier is kept to a minimum. This prevents the substrate to be processed in the carrier from being lifted or damaged after being lifted (that is, the substrate to be processed that has been lifted falls and hits the carrier that has been lowered). Can do. In the ascending process, since the carrier is tilted and raised from the inside of the processing tank, the distance between the substrates to be processed is kept constant, so that adjacent substrates to be processed come into contact (or stick). Such a phenomenon can be avoided. That is, when the upper end portion of the substrate to be processed is pulled upward from the liquid surface, the processing liquid interposed between the adjacent substrates to be processed flows downward between the substrates to be processed, and due to the surface tension of the processing liquid, It is possible to avoid a phenomenon in which the substrates to be processed are attracted in a direction approaching each other and are tilted in contact with each other (or stuck).

  According to the present invention, since the carrier is held horizontally with respect to the surface of the processing liquid in the descent process, the resistance of the processing liquid to the substrate to be processed stored in the carrier can be kept to a minimum. Therefore, it is possible to prevent the substrate to be processed from being lifted or damaged due to falling after being lifted. In the ascending process, since the carrier is tilted and raised, the distance between the substrates to be processed is kept constant. As a result, when the upper end portion of the substrate to be processed is pulled upward from the liquid surface, the processing liquid interposed between the adjacent substrates to be processed flows downward between the substrates to be processed, and is caused by the surface tension of the processing liquid. Thus, it is possible to avoid a phenomenon in which the substrates to be processed are attracted in a direction approaching each other and in contact with each other in a tilted direction (or stuck).

It is a perspective view which shows the whole structure of the immersion treatment apparatus for enforcing the immersion treatment method of the to-be-processed substrate which concerns on Embodiment 1 of this invention. 1 is an external perspective view of a transfer robot according to a first embodiment. FIG. 3 is a front view of the transfer robot according to the first embodiment. 2 is a perspective view of a carrier according to Embodiment 1. FIG. It is the sectional view on the AA line of FIG. It is the BB sectional view taken on the line of FIG. It is a perspective view of a to-be-processed substrate. It is a figure explaining the immersion treatment process which concerns on Embodiment 1 of a semiconductor substrate. It is a figure explaining the immersion treatment process which concerns on Embodiment 1 of a semiconductor substrate. It is a figure explaining the immersion treatment process which concerns on Embodiment 1 of a semiconductor substrate. It is a figure explaining the immersion treatment process which concerns on Embodiment 1 of a semiconductor substrate. It is a figure explaining the immersion treatment process which concerns on Embodiment 1 of a semiconductor substrate. It is a figure explaining the immersion treatment process which concerns on Embodiment 1 of a semiconductor substrate. It is a figure explaining the immersion treatment process which concerns on Embodiment 1 of a semiconductor substrate. It is a partially enlarged view around the substrate insertion groove. FIG. 6 is an external perspective view of a transfer robot according to a second embodiment. FIG. 10 is a front view of a transfer robot according to a second embodiment. 10 is a perspective view of a carrier according to Embodiment 2. FIG. It is CC sectional view taken on the line of FIG. It is a figure explaining the immersion treatment process which concerns on Embodiment 2 of a semiconductor substrate. It is a figure explaining the immersion treatment process which concerns on Embodiment 2 of a semiconductor substrate. It is a figure explaining the immersion treatment process which concerns on Embodiment 2 of a semiconductor substrate. It is a figure explaining the immersion treatment process which concerns on Embodiment 2 of a semiconductor substrate. It is a figure explaining the immersion treatment process which concerns on Embodiment 2 of a semiconductor substrate. It is a figure explaining the immersion treatment process which concerns on Embodiment 2 of a semiconductor substrate. It is a figure explaining the immersion treatment process which concerns on Embodiment 2 of a semiconductor substrate. The other example of a structure of a rib piece is shown, and it respond | corresponds to the BB sectional drawing of FIG. It is a table | surface which shows the experimental result of the ratio with which the sticking with respect to various pulling speeds remains when it pulls up without inclining a semiconductor substrate. It is a table | surface which shows the experimental result of the ratio with which the sticking with respect to various pulling speeds remains when it pulls up without inclining a semiconductor substrate. It is a table | surface which shows the experimental result of the ratio with which the sticking with respect to various pulling speeds remains when a semiconductor substrate is lifted by 4 degrees. It is a table | surface which shows the experimental result of the ratio with which the sticking with respect to various pulling speeds remains when a semiconductor substrate is lifted by 4 degrees. It is a table | surface which shows the experimental result of the ratio with which the sticking with respect to various pulling-up speeds when a semiconductor substrate is pulled up 10 degree | times tilting. It is a table | surface which shows the experimental result of the ratio with which the sticking with respect to various pulling-up speeds when a semiconductor substrate is pulled up 10 degree | times tilting. It is a table | surface which shows the experimental result of the ratio with which the sticking with respect to various pulling-up speeds when a semiconductor substrate is pulled up 10 degree | times tilting. It is a table | surface which shows the experimental result of the ratio with which the sticking with respect to various pulling-up speeds when a semiconductor substrate is pulled up 10 degree | times tilting. (A)-(c) is a schematic longitudinal cross-sectional view for demonstrating a mode that an adjacent board | substrate sticks when pulling up a to-be-processed substrate perpendicularly from a process liquid, (d) is perpendicular | vertical to a to-be-processed substrate from a process liquid. It is a schematic cross-sectional view which shows the mode of the board | substrate which adjoins when pulling up.

  Embodiments of the present invention will be described below with reference to the drawings.

<Embodiment 1>
FIG. 1 to FIG. 5B show the configuration of an immersion processing apparatus for carrying out the immersion processing method for a substrate to be processed according to Embodiment 1, FIG. 1 is a configuration diagram of the entire apparatus, and FIG. 3 is a front view of the transfer robot, FIG. 4 is a perspective view of the carrier, FIG. 5A is a cross-sectional view taken along line AA in FIG. 4, and FIG. 5B is a cross-sectional view taken along line BB in FIG. FIG. 6 is a perspective view of the substrate to be processed.

  The immersion treatment apparatus according to the first embodiment is an apparatus for immersing a semiconductor substrate that is a substrate to be processed. As shown in FIG. 1, the whole is assembled in a structural housing 1. For example, two transfer robots A1 and B1 are provided. In the first embodiment, the processing tanks arranged on the floor surface 1b of the structural housing 1 are composed of five tanks: an etching processing tank 3, a first cleaning tank 4, a second cleaning tank 5, a hot water tank 6, and a drying tank 7. These tanks 3 to 7 are arranged at predetermined intervals along the transfer direction (Y direction in FIG. 1) of the transfer robots A1 and B1. Further, by placing the input belt portion 2 and the discharge belt portion 8 before and after the structural housing 1 (on the left and right sides in FIG. 1), an interface between the previous process and the next process is taken. In the etching treatment tank 3, an etching treatment with hydrofluoric acid (HF) is performed at room temperature for about 10 seconds. In the 1st washing tank 4, rough water washing is performed for about 300 seconds at normal temperature. In the 2nd washing tank 5, finishing water washing is performed for 300 seconds at normal temperature. In the hot water tank 6, in order to suppress the thermal crack at the time of drying, it wash | cleans for 300 second with 60 degree warm water. In the drying tank 7, the inside of the tank is set to 100 ° and evaporation drying is performed for 300 seconds.

  2 and 3 are an external perspective view and a front view of the transfer robot.

  As shown in FIGS. 1 to 3, the transfer robots A <b> 1 and B <b> 1 are supported by rail members 1 c provided on the top surface 1 a of the structural housing 1, and are provided so as to be reciprocable along the transfer direction Y. The whole is supported by a support 10 that can be moved up and down by a drive mechanism (not shown). A robot main body 11 is attached to the lower part of the support 10, and a pair of support rods 12 a and 12 b are provided on the lower surface of the robot main body 11 with a certain interval in the transport direction Y. Yes. One support rod 12b is configured to be vertically extendable by an expansion and contraction rod such as a hydraulic cylinder.

  A carrier arm 13a extending horizontally and parallel to the X direction in FIG. 2 is supported at the lower end of the support rod 12a, and a plurality of carrier arms 13a (with a certain interval in the horizontal direction X) ( In this example, two carrier chucks 14a are provided.

  On the other hand, a carrier arm 13b extending horizontally and parallel to the X direction in FIG. 2 is supported at the tip (lower end) of the telescopic rod 12b1 of the telescopic rod constituting the support rod 12b. A plurality of (two in this example) carrier chucks 14b are provided at regular intervals in the horizontal direction X. Each of the carrier chucks 14a and 14b includes a chuck rod 14a1 and 14b1 and chuck claws 14a2 and 14b2, and is formed in an L shape when viewed from the front.

  Also, the two carrier chucks 14a provided on the carrier arm 13a and the two carrier chucks 14b provided on the carrier arm 13b face the chuck claws 14a2 and 14b2 inward in the Y direction, respectively. Are arranged to be.

  The carrier chucks 14a and 14b arranged in this way are rotated from the state shown by the solid lines in FIG. 2 and FIG. 3 by rotating the carrier arms 13a and 13b by a drive mechanism (not shown). It can be opened and closed (up to the state indicated by the two-dot chain line in FIG. 3) in the direction of opening (can be rotated in the R direction in FIG. 3).

  4, FIG. 5A, and FIG. 5B show the structure of the carrier that accommodates the semiconductor substrate, FIG. 4 is a perspective view, FIG. 5A is a cross-sectional view taken along the line AA in FIG. FIG.

  The carrier 31 for storing the semiconductor substrate is formed in a box shape having an upper opening, and a plurality of semiconductor substrates are stored from the upper surface opening 32 of the carrier 31 with a certain interval. It has become. At the upper end portions of the left and right side walls of the carrier 31, rail strip locking portions 33 extending horizontally in the outer direction are formed. The transport robots A1 and B1 hold the carrier 31 by gripping the pair of left and right engaging portions 33 from both sides with the pair of carrier chucks 14a and 14b, and transport the carrier 31 in the transport direction Y in this state. It has become.

  As shown in FIG. 5A, a plurality of rib pieces 34 are formed on the inner wall surface of the carrier 31 with a constant interval T11 (= W13 + W14) along the conveyance direction Y of the carrier 31, and adjacent to each other. Between the rib pieces 34 is a substrate insertion groove 35 for storing and holding the semiconductor substrate.

  As shown in FIG. 5B, one rib piece 34 has a substantially U shape that continues from the upper end of one side wall 31a in the X direction perpendicular to the transport direction Y of the carrier 31 to the upper end of the other side wall 31c through the bottom wall 31b. It is formed in a letter shape. Therefore, the substrate insertion groove 35 between the adjacent rib pieces 34 is also substantially U-shaped from the upper end of one side wall 31a in the direction orthogonal to the transport direction Y of the carrier 31 to the upper end of the other side wall 31c through the bottom wall 31b. It is formed in a letter shape. The semiconductor substrate is configured such that the peripheral edge portion is accommodated and held in the substrate insertion groove 35 formed in a substantially U shape in this way. As shown in FIG. 5B, the formation location of the rib piece 34 is not limited to that formed in series from the upper end of one side wall 31 a to the upper end of the other side wall 31 c through the bottom wall 31 b. However, this will be described later as another specific example.

  FIG. 6 is a perspective view showing an example of the semiconductor substrate 41. This semiconductor substrate 41 is mainly used for a crystal solar cell, and has an octagonal shape in which one side is 15.6 cm and a notch is provided at each corner, and the thickness is 100 to 150 μm. ing. Although the thickness of the substrate for the conventional crystal solar cell was about 300 μm, the thickness of the substrate has been reduced as described above due to the recent progress in studies on reducing the amount of silicon material used. That is, the recent semiconductor substrate 41 tends to bend as the thickness becomes thinner, the weight of one substrate becomes lighter. Here, the width (width in the vertical direction and the horizontal direction) of the semiconductor substrate 41 is expressed as W1 (= 15.6 cm), and the thickness is expressed as T1 (= 100 to 150 μm).

  Based on such dimensions of the semiconductor substrate 41, the internal dimensions of the carrier 31 are set as follows.

  That is, as shown in FIGS. 5A and 5B, the height H1 from the bottom wall 31b inside the carrier 31 to the upper end of the opening is 15.6 cm, which is substantially the same as the width W1 of the semiconductor substrate 41, and the transport direction Y A dimension W11 between one side wall 31a and the other side wall 31c orthogonal to each other is slightly wider than the width W1 of the semiconductor substrate 41, for example, 16.0 cm. The protruding length of the rib piece 34 is 4 mm, for example. Therefore, the width W12 between the opposed tip portions of the rib piece 34 formed on one side wall 31a and the rib piece 34 formed on the other side wall 31c is 15.2 cm slightly narrower than the width W1 of the semiconductor substrate 41. ing. As a result, even if the semiconductor substrate 41 inserted into the substrate insertion groove 35 is laterally displaced in the direction of the one side wall 31a or the other side wall 31c in the substrate insertion groove 35, the peripheral edge is separated from the rib piece 34. It does not fall into the adjacent substrate insertion groove 35 side. That is, the semiconductor substrate 41 does not come off from the inserted substrate insertion groove 35.

  The width W13 in the Y direction of the substrate insertion groove 35 is 2 mm, and the width W14 in the Y direction of the rib piece 34 is 3 mm. That is, the width W13 of the substrate insertion groove 35 is formed sufficiently wider than the thickness T1 of the semiconductor substrate 41. In this example, the width W13 of the substrate insertion groove 35 is formed to be about 13 to 20 times the width T1 of the semiconductor substrate 41. For this reason, the semiconductor substrate 41 is slightly tilted (inclined) in the transport direction Y within the substrate insertion groove 35, but the inclination angle is less than about 0.007 ° at the maximum, and the inclination of the first embodiment to be described later. The angle is sufficiently smaller than an angle of 4 ° or the like, and even if the substrate insertion groove 35 is slightly tilted in the transport direction Y, it can be said to be inserted almost vertically.

  Further, the inner wall width W15 in the transport direction Y of the carrier 31 varies depending on the number of semiconductor substrates 41 to be stored, and is about 15.3 cm (= T11 × 30 + 3 mm), for example, when 30 substrates can be stored.

  Although not shown in the figure, the bottom wall and each side wall of the carrier 31 are formed with a number of through holes for allowing the processing liquid to flow into the carrier 31.

  Note that the width W26 between the chuck claws 14a2 and 14b2 of the carrier chucks 14a and 14b in the state shown by the solid line in FIG. , 14b1 is formed to be slightly wider than the width W17 between both ends of the locking portion 33 formed on the carrier 31. Thus, by providing a slight gap between the carrier chucks 14a, 14b and the carrier 31, play when the carrier 31 is tilted is ensured and the tilting operation can be performed smoothly.

  Next, with respect to the semiconductor substrate immersion processing method using the immersion processing apparatus having the above-described configuration, refer to the processing steps shown in FIGS. 7A to 7G and the partially enlarged view around the substrate insertion groove 35 shown in FIG. explain.

  First, from the previous step, the carrier 31 in which a plurality of semiconductor substrates 41 are accommodated is conveyed by the loading belt portion 2 and stops at the standby position 60 (see FIG. 1).

  Next, the left transfer robot A1 is moved to the standby position 60, the support 10 is moved downward to lower the entire robot body 11, and the carrier chucks 14a and 14b are used to hold the locking portion 33 of the carrier 31. When grasping from both sides, the support body 10 is moved upward in this state, the entire robot body 11 is raised, and the carrier 31 is lifted horizontally.

  Next, when the transfer robot A1 is moved in the transfer direction Y and the entire robot body 11 (specifically, the carrier 31) is moved to the upper part of the etching processing tank 3 (see FIG. 7A), the carrier 31 is horizontally moved. While being held (that is, in a state where the semiconductor substrate 41 is kept perpendicular to the liquid surface of the etching processing tank 3), the support 10 is lowered at a predetermined speed, and the entire carrier 31 is processed at a predetermined speed. It is immersed in and placed on a cage-like mounting table 3a provided on the bottom surface of the etching treatment tank 3 (see FIG. 7B).

  That is, in the lowering process (immersion process) of the carrier 31, the semiconductor substrate 41 is held perpendicular to the surface of the processing liquid, so that the resistance of the processing liquid when the semiconductor substrate 41 is submerged in the processing liquid is reduced. As a result, the semiconductor substrate 41 can be prevented from being lifted, damaged by being lifted, dropped into the etching processing tank 3, and the like.

  Thereafter, when the processing in the etching processing tank 3 is finished, the process proceeds to a pulling process in FIG. 7C. At this time, as shown in FIG. 7D, the hydraulic cylinder of one of the support rods 12b of the transfer robot A1 is operated so that the telescopic rod is retracted (moved upward), and the carrier 31 is moved to the closing belt portion 2 side (in the drawing). Tilt to the left) by a predetermined angle θ. Here, the predetermined angle θ is set to an arbitrary angle within the range of 4 ° to 45 °, more preferably 4 ° to 10 °. At this time, the processing surface of the semiconductor substrate 41 is accommodated in the carrier 31 so as to be positioned on the right side. That is, the semiconductor substrate 41 is accommodated so that the inclined upper surface becomes the processing surface. In this case, as shown in FIG. 8 in which each semiconductor substrate 41 is partially enlarged, the entire peripheral edge portion on the inclined lower surface side opposite to the processing surface is inclined in the substrate insertion groove 35 on the lower rib portion. Therefore, all the semiconductor substrates 41 are inclined in the same direction and in parallel while maintaining a certain distance L1 (W13 + W14−T1 = 4.9 to 4.85 mm).

  Then, in this inclined state, as shown in FIGS. 7E and 7F, the support body 10 is moved upward to raise the entire robot body 11 at a predetermined speed, and the carrier 31 (that is, the semiconductor substrate 41) is moved. The inside of the processing liquid is pulled upward while maintaining the inclined state.

  Thus, in the ascending process (pulling process), the semiconductor substrate 41 is tilted and raised from within the etching processing tank 3, so that the semiconductor substrate 41 is pushed downward by the processing liquid on the surface opposite to the processing surface. Pressure works. Therefore, the distance between adjacent semiconductor substrates 41 is always kept constant at the distance L1. Thus, there is a problem when pulling up vertically without tilting, that is, an etching solution (processing solution) that flows downward between adjacent semiconductor substrates 41 when the upper end portion 41b of the semiconductor substrate 41 is pulled up from the liquid surface. Due to the surface tension, it is possible to avoid a phenomenon in which adjacent semiconductor substrates 41 are attracted in a direction approaching each other and in contact with (or stick to) each other in an inclined direction. In particular, contact and sticking between the semiconductor substrates 41 are likely to occur when they are raised (during pulling up), so that the semiconductor substrate 41 is lifted by inclining the semiconductor substrate 41 during the raising process (pulling up process). In addition, damage due to lifting can be reliably prevented.

  Thereafter, as shown in FIG. 7G, when the hydraulic cylinder of one support rod 12b of the transport robot A1 is operated to extend (move downward) the expansion rod, and the carrier 31 is held in the horizontal state again, this state Then, the transfer robot A1 is moved in the transfer direction Y, and the entire robot body 11 (specifically, the carrier 31) is moved to the upper part of the adjacent first cleaning tank 4.

  The subsequent processing is the same as the processing in the etching processing tank 3 described above, and the cleaning process in the rough water cleaning by the first cleaning tank 4 is performed by performing the processing operation of FIGS. 7A to 7G.

  In addition, what is necessary is just to perform the finishing water washing process in the 2nd washing tank 5 after that, and the warm water washing process in the warm water tank 6 similarly. Moreover, since the drying process by the subsequent drying tank 7 does not use a processing liquid, what is necessary is just to perform conventionally.

  When the drying process is completed in this way, the carrier 31 is transported to the transport belt unit 8 by the transport robot B1 and placed on the belt, and transported to the next process. The transfer robot B1 is in charge of processes after the cleaning process by the first cleaning tank 4. That is, the transfer robots A 1 and B 1 deliver the carrier 31 in the first cleaning tank 4.

<Embodiment 2>
9 to 12 show the configuration of an immersion processing apparatus for carrying out the immersion processing method for a substrate to be processed according to the second embodiment. FIG. 9 is an external perspective view of the transfer robot, and FIG. FIG. 11 is a perspective view of the carrier, and FIG. 12 is a cross-sectional view taken along the line CC of FIG.

  The immersion treatment apparatus of the second embodiment is the same as the construction of the immersion treatment apparatus of the first embodiment shown in FIG. 1 except for the configurations of the transfer robots A2 and B2 and the carrier 31, and the etching treatment tank 3 and the first cleaning are performed. Since it consists of five tanks of the tank 4, the 2nd washing tank 5, the warm water tank 6, and the drying tank 7, these detailed description is abbreviate | omitted here.

  As shown in FIGS. 9 and 10, the transfer robots A <b> 2 and B <b> 2 of Embodiment 2 are provided so as to be reciprocally movable along the transfer direction in a form supported by rail members provided on the top surface of the structural housing, It is supported by the support body 10 that can be moved up and down by the drive mechanism. A robot body 11 is attached to the lower part of the support body 10, and three support rods 22 a, 22 b, and 22 c are provided on the lower surface of the robot body 11 at a certain interval in the transport direction Y. It has been. Of these, the central support rod 22b is configured to be vertically extendable by an expansion rod such as a hydraulic cylinder.

  A carrier arm 23a extending horizontally and parallel to the X direction in FIG. 9 is supported at the lower end of the support rod 22a at the left end in the figure, and this carrier arm 23a has a certain interval in the horizontal direction X. A plurality of (two in this example) first carrier chucks 24a are provided.

  Further, a carrier arm 23c extending horizontally and parallel to the X direction in FIG. 9 is supported at the lower end portion of the support rod 22c at the right end in the figure, and this carrier arm 23c has a certain interval in the horizontal direction X. There are a plurality (two in this example) of second carrier chucks 24c.

  On the other hand, a carrier arm 23b extending horizontally and parallel to the X direction in FIG. 9 is supported on the tip (lower end) of the telescopic rod 22b1 of the telescopic rod constituting the support rod 22b in the center. The arm 23b is provided with a plurality of first carrier chucks 25a and second carrier chucks 25c (two on the left and right sides in this example) with a constant spacing in the horizontal direction X.

  The first carrier chuck 24a supported by the left end support rod 22a is composed of a chuck rod 14a1 and a chuck claw 14a2, and is formed in an L shape in front view. The second carrier chuck 24c supported by the rightmost support bar 22c is composed of a chuck bar 14c1 and a chuck claw 14c2, and is formed in an L shape in front view.

  However, the first carrier chuck 14a at the left end has the chuck pawl 14a2 facing outward (left side in the figure), and the right carrier's second carrier chuck 14c has the chuck pawl 24c2 facing outward (right side in the figure). Yes. That is, the outer chuck claws 24a2 and 24c2 are arranged with their backs facing each other.

  On the other hand, the first carrier chuck 25a and the second carrier chuck 25c of the support rod 22b in the central portion extend horizontally and extend downward from the extended distal end portion of the flanges 25a1, 25c1. And chuck claws 25a2 and 25c2 provided at the tip portions (lower end portions) of the chuck rods 25a1 and 25c1. In the first carrier chuck 25a on the left side in the figure, the chuck claw 25a2 faces the right side, and in the second carrier chuck 25c on the right side in the figure, the chuck claw 25c2 faces the left side. That is, both chuck claws 25a2 and 25c2 are arranged to face each other.

  That is, the first carrier chuck 24a supported by the left end support bar 22a and the first carrier chuck 25a supported by the center support bar 22b are arranged to face each other with the back facing each other. The second carrier chuck 24c supported by the support rod 22c and the second carrier chuck 25c supported by the central support rod 22b are disposed to face each other.

  That is, the first carrier chuck 24a and the first carrier chuck 25a constitute a pair of chuck mechanism sections that hold one carrier 31, and the second carrier chuck 24c and the second carrier chuck 25c are different. A pair of chuck mechanism units for holding one carrier 31 is configured.

  That is, the transfer robots A2 and B2 of the second embodiment can hold the two carriers 31 at a time and transfer them simultaneously.

  The first carrier chuck 24a and the first carrier chuck 25a arranged as described above are rotated from the state shown by the solid line in FIG. 10 by rotating the carrier arms 23a and 23b by a driving mechanism (not shown). The claw 24a2 and 25a2 have a structure that can be opened and closed (up to a state indicated by a two-dot chain line in FIG. 10) (can be rotated in the S1 direction in FIG. 10). Similarly, the second carrier chuck 24c and the second carrier chuck 25c are driven from the state indicated by the solid line in FIG. 10 by rotating the carrier arms 23c and 23b by a drive mechanism (not shown). 25a2 can be opened and closed (up to a state indicated by a two-dot chain line in FIG. 10) in a direction to open 25a2 (can be rotated in the S2 direction in FIG. 10). That is, the first carrier chuck 25a and the second carrier chuck 25c supported by the central support bar 22b are rotated by the rotation mechanism so that the carrier arm 23b rotates in the opposite direction by one-way rotation. It is configured. Such a structure of the rotation mechanism unit is a conventionally well-known general mechanism structure, and such a general mechanism structure can be applied also in the present invention.

  11 and 12 show the configuration of the carrier for housing the semiconductor substrate, FIG. 11 is a perspective view, and FIG. 12 is a cross-sectional view taken along the line CC in FIG.

  The difference between the carrier 31 of the second embodiment and the carrier 31 of the first embodiment is only the structure of the locking portion, and the other configuration (the groove configuration inside the carrier) is the same as the carrier 31 of the first embodiment. Here, the same reference numerals are assigned to the same members, and detailed description thereof is omitted.

  That is, the carrier 31 according to the second embodiment has a configuration in which two arch-shaped locking portions 38 are provided at predetermined intervals on the upper ends of the left and right side walls. Therefore, the carrier 31 of the second embodiment is not provided with the locking portion 33 like the carrier 31 of the first embodiment. The transfer robots A2 and B2 hold the carrier 31 by grasping the pair of left and right engaging portions 38 of the carrier 31 by opening the pair of first carrier chucks 24a and 25a from the inner side to the outer side. The carrier 31 is transported in the transport direction Y.

  The width W36 between the chuck claws 24a2 and 25a2 of the first carrier chucks 24a and 25a and the width W36 between the chuck claws 24c2 and 25c2 of the second carrier chucks 24c and 25c in the state shown by the solid line in FIG. The carrier 31 is formed to be sufficiently wider than the inner width W46 in the transport direction Y of the locking portion 38 provided at the upper end of the left and right side walls. Further, the outer width W37 between the chuck rods 24a1, 25a1 of the first carrier chucks 24a, 25a and the outer width between the chuck rods 24c1, 25c1 of the second carrier chucks 24c, 25c in the state shown by the solid line in FIG. W37 is formed to be substantially the same as or slightly narrower than the inner width W46 in the transport direction Y of the locking portion 38 provided at the upper end of the left and right side walls of the carrier 31.

  Next, with respect to the semiconductor substrate immersion treatment method using the immersion treatment apparatus having the above-described configuration, refer to the process steps shown in FIGS. 13A to 13G and the partially enlarged view around the substrate insertion groove 35 shown in FIG. explain.

  First, from the previous step, the two carriers 31 in which a plurality of semiconductor substrates 41 are stored are transported by the feeding belt portion 2 in a state where they are arranged at an interval that can be chucked by the two chuck mechanism portions of the transport robot A2, and the standby position. Stop at 60.

  Next, when the transfer robot A2 moves to the standby position 60, the support body 10 is moved downward to lower the entire robot body 11, and the first carrier chucks 24a and 25a are used to lock the left carrier 31. 38 is grasped from both inner sides, and the latching portion 38 of the right carrier 31 is grasped from both inner sides by the second carrier chucks 24c and 25c, this time, the support 10 is moved upward in the state as it is. As a result, the entire robot body 11 is raised and the two carriers 31 are lifted horizontally.

  Next, when the transfer robot A2 is moved in the transfer direction Y and the entire robot body 11 (specifically, the two carriers 31) is moved to the upper part of the etching tank 3 (see FIG. 13A), the two carriers In a state where 31 is kept horizontal (that is, in a state where the semiconductor substrate 41 is kept perpendicular to the liquid surface of the etching treatment tank 3), the support 10 is lowered at a predetermined speed, and the entire two carriers 31 are moved. Is immersed in the treatment liquid at a predetermined speed and placed on a cage-like placement table 3a provided on the bottom surface of the etching treatment tank 3 (see FIG. 13B).

  That is, in the lowering process (immersion process) of the carrier 31, the semiconductor substrate 41 is held perpendicular to the surface of the processing liquid, so that the resistance of the processing liquid when the semiconductor substrate 41 is submerged in the processing liquid is reduced. As a result, the semiconductor substrate 41 can be prevented from being lifted, damaged by being lifted, dropped into the etching processing tank 3, and the like.

  Thereafter, when the processing in the etching processing bath 3 is finished, the process proceeds to the pulling process in FIG. 13C. At this time, as shown in FIG. 13D, the hydraulic cylinder of the support rod 22b at the center of the transfer robot A2 is operated to retract the telescopic rod (move upward), and the two carriers 31 are rotated by a predetermined angle θ. In this case, the left carrier 31 is inclined to the left and the right carrier 31 is inclined to the right. Accordingly, the processing surface of the semiconductor substrate 41 accommodated in the left carrier 31 is accommodated so as to be on the right side (so that it is on the inclined upper surface side when inclined), and the semiconductor accommodated in the right carrier 31 is accommodated. The processing surface of the substrate 41 is stored so as to be on the left side (so that it is on the inclined upper surface side when inclined).

  Here, the predetermined angle θ is set to an arbitrary angle within the range of 4 ° to 45 °, more preferably 4 ° to 10 °. By setting the tilt angle when rising to 4 ° to 45 °, it is possible to reliably prevent the semiconductor substrate 41 from being lifted and to prevent damage to the semiconductor substrate 41 due to resistance of the processing liquid. That is, when the angle is 4 ° or less, the possibility of floating increases, and when the angle is 45 ° or more, the resistance of the processing liquid increases when the semiconductor substrate 41 is raised (when it is pulled up), and the possibility that the thin semiconductor substrate 41 is damaged increases. .

  In this case, as shown in FIG. 8 in which each semiconductor substrate 41 is partially enlarged, the entire peripheral edge portion on the inclined lower surface side opposite to the processing surface is inclined in the substrate insertion groove 35 on the lower rib portion. Therefore, all the semiconductor substrates 41 are inclined in the same direction and in parallel while maintaining a certain distance L1 (W13 + W14−T1 = 4.9 to 4.85 mm).

  Then, in this inclined state, as shown in FIGS. 13E and 13F, the support body 10 is moved upward to raise the entire robot body 11 at a predetermined speed, and the two carriers 31 (that is, stored) The semiconductor substrate 41) is pulled upward from the processing solution while being inclined.

  As described above, in the ascending process (pulling process), the semiconductor substrate 41 is tilted and raised from within the etching processing tank 3, whereby a downward pressing force by the processing liquid acts on the processing surface of the semiconductor substrate 41. Therefore, the distance between adjacent semiconductor substrates 41 is always kept constant at the distance L1. Thus, there is a problem when pulling up vertically without tilting, that is, an etching solution (processing solution) that flows downward between adjacent semiconductor substrates 41 when the upper end portion 41b of the semiconductor substrate 41 is pulled up from the liquid surface. Due to the surface tension, it is possible to avoid a phenomenon in which adjacent semiconductor substrates 41 are attracted in a direction approaching each other and in contact with (or stick to) each other in an inclined direction. In particular, contact and sticking between the semiconductor substrates 41 are likely to occur when they are raised (during pulling up), so that the semiconductor substrate 41 is lifted by inclining the semiconductor substrate 41 during the raising process (pulling up process). In addition, damage due to lifting can be reliably prevented.

  After that, as shown in FIG. 13G, when the hydraulic cylinder of the support rod 22b at the center of the transfer robot A2 is operated to extend (move downward) the expansion and contraction rod, the two carriers 31 are held in the horizontal state again. In this state, the transfer robot A2 is moved in the transfer direction Y, and the entire robot body 11 (specifically, the two carriers 31) is moved to the upper part of the adjacent first cleaning tank 4.

  The subsequent processing is the same as the processing in the etching processing tank 3 described above, and the cleaning process in the rough water cleaning by the first cleaning tank 4 is performed by performing the processing operation of FIGS. 13A to 13G.

  The subsequent finish cleaning process in the second cleaning tank 5 and the warm water cleaning process in the warm water tank 6 may be performed in the same manner. Moreover, since the drying process by the subsequent drying tank 7 does not use a processing liquid, what is necessary is just to perform conventionally.

  When the drying process is completed in this way, the carrier 31 is transported to the transport belt unit 8 by the transport robot B2 and placed on the belt, and transported to the next process. The transfer robot B2 is in charge of processes after the cleaning process by the first cleaning tank 4. That is, the transfer robots A2 and B2 deliver the carrier 31 on the first cleaning tank 4.

  In each of the above embodiments, the rib pieces 34 are formed in a series in a substantially U shape in side view from the upper end of one side wall 31a through the bottom wall 31b to the upper end of the other side wall 31c. It is not necessary to form a series. For example, as shown in FIG. 14, a bottom wall rib piece 34b having a predetermined length is formed at the center in the width direction of the bottom wall 31b, and the height in the center of each side wall 31a, 31c or Side wall rib pieces 34a and 34c having a predetermined length may be formed on the upper portion. As described above, the rib pieces 34a, 34b, and 34c are divided into three portions on each wall surface, and each of the rib pieces 34a, 34b, and 34c is formed to be short. It is possible to prevent the occurrence of processing unevenness.

<Examination of the effect of tilting and lifting>
Next, the effect of tilting and lifting the semiconductor substrate 41 in the ascending process (pulling process) will be examined.

  Here, the following experiment is conducted to verify the effect.

  A carrier containing 50 semiconductor substrates was prepared, and adjacent semiconductor substrates were pasted together in a washing tank. At this time, there are 25 sticking places, and this sticking place is hereinafter referred to as a sticking preliminary place.

  After sticking in this way, the effect was evaluated at the rate at which sticking remained for various pulling angles and pulling speeds.

  FIG. 15A and FIG. 15B show experimental results of the ratio of sticking to various pulling speeds when the semiconductor substrate is lifted without tilting (that is, perpendicular to the liquid surface) as in the past. In this experiment, the lifting operation was performed three times at the same pulling speed, and FIG. 15A shows the experimental result.

  That is, when the semiconductor substrate is not tilted, the remaining number of sticking points increases particularly when the pulling speed is 4.00 cm / sec or less, and particularly when the pulling speed is 2.67 cm / sec or less. . As a result, as shown in FIG. 15B, which is an average of the sticking ratio at each pulling speed, when the semiconductor substrate is not tilted, if the pulling is performed at a slow speed of 5.33 cm / sec or less, the processing can be uneven. I understand.

  FIG. 16A and FIG. 16B show the experimental results of the ratio of sticking to various pulling speeds when the semiconductor substrate is lifted by tilting 4 °. In this experiment, the pulling operation at the same pulling speed is arbitrarily performed between three and one time, and FIG. 16A shows the experimental result.

  That is, when the semiconductor substrate is tilted by 4 °, if the pulling speed is 1.78 cm / sec or less, the remaining number of sticking points increases, and particularly when the pulling speed is 2.67 cm / sec or less, it rapidly increases. . As a result, as shown in FIG. 16B in which the average of the sticking ratio at each pulling speed is taken, when the semiconductor substrate is tilted by 4 °, the pulling at a slow speed of 1.78 cm / sec or less causes uneven processing. You can see that In other words, it can be seen that if it is 1.78 cm / sec or more (in this experimental result, 2 cm / sec or more), it can be pulled up almost without sticking. However, in this experiment, when it was performed three times at a pulling speed of 3.20 cm / sec, one sticking portion occurred at one time.

  FIG. 17A and FIG. 17B show the experimental results of the ratio of sticking to various pulling speeds when the semiconductor substrate of Sample 1 is lifted while being tilted by 10 °. In this experiment, the pulling operation at the same pulling speed is arbitrarily performed between three times and one time, and FIG. 17A shows the experimental result.

  That is, when the semiconductor substrate is tilted by 10 °, one sticking portion remains when the pulling speed is 0.84 cm / sec and 2.67 cm / sec, but at zero points before and after that. In view of this, it can be said that this one place is at a level that can be ignored. As a result, as shown in FIG. 17B, which averaged the sticking ratio at each pulling speed, when the semiconductor substrate was tilted by 10 °, at all speeds of 16.00 cm / sec to 0.70 cm / sec, It can be seen that it can be pulled up almost without sticking.

  FIG. 18A and FIG. 18B show the experimental results of the ratio of sticking to various pulling speeds when the semiconductor substrate of Sample 2 is tilted by 10 ° and pulled up. In this experiment, the pulling operation at the same pulling speed is arbitrarily performed between three and one time, and FIG. 18A shows the experimental result.

  That is, when the semiconductor substrate was tilted by 10 °, the number of sticking points was zero at all pulling speeds. As a result, as shown in FIG. 18B in which the average of the sticking ratio at each pulling speed is taken, when the semiconductor substrate is tilted by 10 °, at all speeds of 16.00 cm / sec to 0.80 cm / sec, It can be seen that lifting without sticking is possible.

  From the above experimental results, the proper pulling speed at which the processing liquid does not remain on the semiconductor substrate is considered to be an inclination angle of 4 ° to 4 ° considering that one sticking point is generated at the pulling speed of 3.20 cm / sec in FIG. Within the range of 10 °, it is approximately within the range of 4.00 cm / sec to 6.00 cm / sec. If the pulling speed is higher than this, there is a high possibility that the liquid remains between the substrates, and problems such as excessive etching and stain due to natural drying during transportation may occur. In addition, when the pulling speed is fast, when the carrier rise stops, a large force is applied to the carrier and the semiconductor substrate, so that the carrier falls off the carrier arm or the semiconductor substrate jumps in the carrier, There is a possibility that the carrier bottom wall and the end portion of the semiconductor substrate collide and the semiconductor substrate is broken. For these reasons, the pulling speed is limited to the above range.

  In each of the above embodiments, the shapes and dimensions of the carrier 31 and the semiconductor substrate 41 are examples. If the shapes and dimensions of the semiconductor substrate 41 are different, the internal dimensions of the carrier 31 and the shapes of the rib pieces 34 and the substrate insertion groove 35 are used. Of course, the dimensions and dimensions are changed accordingly.

  Moreover, the said embodiment disclosed this time is an illustration in all the points, Comprising: It does not become a basis of limited interpretation. Therefore, the technical scope of the present invention is not interpreted only by the above-described embodiments, but is defined based on the description of the scope of claims. Moreover, all the changes within the meaning and range equivalent to a claim are included.

DESCRIPTION OF SYMBOLS 1 Structure housing 2 Input belt part 1a Top surface 1b Floor surface 1c Rail member 3 Etching processing tank 4 1st washing tank 5 2nd washing tank 6 Hot water tank 7 Drying tank 8 Discharge belt part 10 Support body (elevating part)
11 Robot body 12a Support rod 12b Support rod (angle changing unit)
12b1 Telescopic rod 13a, 13b Carrier arm 14a, 14b Carrier chuck 14a1, 14b1 Chuck rod 14a2, 14b2 Chuck claw 22a, 22c Support rod 22b Support rod (elevating part)
22b1 Telescopic rods 23a, 23b, 22c Carrier arm 24a First carrier chuck 24c Second carrier chuck 25a First carrier chuck 25c Second carrier chuck 24a1, 24c1, 25a1, 25c1 Chuck rod 24a2, 24c2, 25a2, 25c2 Chuck claw 31 Carrier 31a, 31c Side wall 31b Bottom wall 32 Upper surface opening 33 Locking portion 34 Rib piece 35 Substrate insertion groove 38 Locking portion 41 Semiconductor substrate (substrate to be processed)
A1, A2, B1, B2 Transfer robot (transfer unit)

Claims (5)

A plurality of substrates to be processed stored in a state where a peripheral portion is inserted into each of a plurality of substrate insertion groove portions provided on an inner wall surface of the carrier are immersed in a processing tank filled with a processing solution together with the carrier. An immersion treatment method for a substrate to be treated,
A descent step of holding the carrier horizontally with respect to the surface of the treatment liquid and lowering the carrier into the treatment tank;
A dipping process method for a substrate to be processed, comprising: an ascending step of tilting the carrier and raising the carrier from the inside of the processing tank. A method for immersing a substrate to be processed according to claim 1,
In the ascending step, the substrate is immersed in a direction orthogonal to the processing surface of the substrate to be processed, and the substrate is immersed in the processing method. A method for immersing a substrate to be processed according to claim 1 or 2, wherein
An immersion treatment method for a substrate to be processed, wherein an inclination angle of the carrier in the ascending step is 4 ° or more and 45 ° or less with respect to the ascending direction. A method for immersing a substrate to be processed according to any one of claims 1 to 3,
The substrate to be processed is a semiconductor substrate, and the processing liquid is a chemical solution or pure water. A plurality of substrates to be processed stored in a state where a peripheral portion is inserted into each of a plurality of substrate insertion groove portions provided on an inner wall surface of the carrier are immersed in a processing tank filled with a processing solution together with the carrier. An immersion processing apparatus for a substrate to be processed,
A transport unit that holds and transports the carrier;
An angle changing unit for changing a holding angle of the carrier;
An elevating part that holds and raises the carrier,
When the carrier is lowered into the processing tank by the lifting unit, the carrier is held horizontally,
An immersion processing apparatus for a substrate to be processed, wherein the carrier is inclined and held by the angle changing unit when the carrier is raised from the inside of the processing tank by the elevating unit.

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